| Patents for H01S 5 - Semiconductor lasers (52,420) |
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| 06/13/2001 | EP1105753A1 Dispersive multilayer-mirrors and method for designing same |
| 06/13/2001 | DE10043938A1 Quantum well device used in light-emitting diodes or laser diodes comprises alternating stacked quantum well layers and blocking layers |
| 06/13/2001 | DE10038346A1 Multiwavelength interferometer detects amplitude modulation of electrical signal with difference in frequency of signal by detecting phase difference between difference frequency and modulation frequency signals |
| 06/13/2001 | CN1299527A InP-based MQW-laser |
| 06/13/2001 | CN1299526A Semi-conductor optical amplifier |
| 06/13/2001 | CN1299171A Semi-conductive laser device, its mfg. method and optical pick-up device using same |
| 06/13/2001 | CN1299170A Method for mfg. semi-conductive laser device, and assemblying plate and supporting plate therefor |
| 06/12/2001 | US6246816 Wavelength stabilized laser light source |
| 06/12/2001 | US6246709 Integrated optical element and method for manufacturing an integrated optical element |
| 06/12/2001 | US6246708 Semiconductor laser with associated electronic components integrally formed therewith |
| 06/12/2001 | US6246524 Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device |
| 06/12/2001 | US6245589 Fabrication of cooling device of a planar light source |
| 06/12/2001 | US6245259 Wavelength-converting casting composition and light-emitting semiconductor component |
| 06/12/2001 | US6244754 Semiconductor laser module and method of manufacturing the same |
| 06/12/2001 | CA2249398C Method for the manufacture of lasers with tapered guide region |
| 06/10/2001 | CA2327893A1 Semiconductor laser device |
| 06/07/2001 | WO2001041271A1 Semiconductor laser device, method for producing the same, and optical disk device |
| 06/07/2001 | WO2001041270A2 Frequency-narrowed high power diode laser with external cavity |
| 06/07/2001 | WO2001040829A1 Device for concentrating or collimating radiant energy |
| 06/07/2001 | WO2001031374A8 Silicon nanoparticle stimulated emission devices |
| 06/07/2001 | WO2001011395A3 Achromatic diffractive optical modulator |
| 06/07/2001 | US20010003057 Capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact |
| 06/07/2001 | US20010003019 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device |
| 06/07/2001 | US20010002942 Optical transmission and reception module using optical waveguide |
| 06/07/2001 | US20010002917 Method of manufacturing semiconductor laser device and mounting plate and supporting plate |
| 06/07/2001 | US20010002916 Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device |
| 06/07/2001 | DE19948889C1 Vorrichtung zur Symmetrierung der Strahlung von linearen optischen Emittern und Verwendung der Vorrichtung Apparatus for balancing the beam of linear optical emitters and use of the device |
| 06/07/2001 | DE10052899A1 Output control method of solid state laser apparatus, involves controlling electric current, power or voltage impressed to semiconductor laser for controlling shape of output laser pulse waveform |
| 06/06/2001 | EP1104947A2 Nitride semiconductor laser and method for fabricating the same |
| 06/06/2001 | EP1104946A1 Low temperature distributed feedback laser with loss grating and method |
| 06/06/2001 | EP1104945A2 Improved semiconductor laser |
| 06/06/2001 | EP1104603A1 Path monitoring in optical communication systems |
| 06/06/2001 | EP1104540A1 Ignition element with a laser light source |
| 06/06/2001 | EP0799512B1 Laser diode with an ion-implanted region |
| 06/06/2001 | CN1298553A Light emitting semiconductor device |
| 06/05/2001 | US6243506 Optical frequency and temperature sensor system |
| 06/05/2001 | US6243407 High power laser devices |
| 06/05/2001 | US6243404 Laser module with adjustable operating temperature range |
| 06/05/2001 | US6243403 Method and apparatus for integrated optical wavelength stabilization |
| 06/05/2001 | US6243402 Multi-frequency rapidly tunable laser |
| 06/05/2001 | US6243401 Methods and apparatus for wavelength measurement and tracking using a semiconductor laser amplifier |
| 06/05/2001 | US6243180 Optical interconnect for high speed processors |
| 06/05/2001 | US6243148 Liquid crystal display device having a two-dimensional light emitting element array |
| 06/05/2001 | US6242870 Light emitting device driving circuit |
| 06/05/2001 | US6242764 III-N semiconductor light-emitting element having strain-moderating crystalline buffer layers |
| 06/05/2001 | US6242761 Nitride compound semiconductor light emitting device |
| 06/05/2001 | US6242328 Semiconductors, vapor phase epitaxial method and doped with p type impurities |
| 06/05/2001 | CA2106596C Semiconductor laser device |
| 05/31/2001 | WO2001039342A1 Semiconductor light emitting element |
| 05/31/2001 | WO2001039341A2 Integrated high power semiconductor laser with tapered active layer and co-directional grating |
| 05/31/2001 | WO2001039340A2 Mode-selective facet layer for pump laser |
| 05/31/2001 | WO2001039338A1 Method and system for generating laser light |
| 05/31/2001 | WO2001039282A2 Optical semiconductor device comprising a multiple quantum well structure |
| 05/31/2001 | WO2001038222A1 Silicon nanoparticle and method for producing the same |
| 05/31/2001 | WO2000072409A3 Wide stripe distributed bragg reflector lasers with improved angular and spectral characteristics |
| 05/31/2001 | US20010002049 Light-radiating semiconductor component with a luminescence conversion element |
| 05/31/2001 | US20010002048 Light-emitting device using group III nitride group compound semiconductor |
| 05/31/2001 | DE19956565A1 Manufacturing heat sink for electrical components involves structuring metallisation on at least one of two or more substrates with metallisation and channel openings on ceramic layer |
| 05/31/2001 | DE19949198A1 Vorrichtung mit mindestens einer mehrere Einzel-Lichtquellen umfassenden Lichtquelle A device with at least one plurality of individual light sources comprising light source |
| 05/31/2001 | DE19945134A1 Lichtemittierendes Halbleiterbauelement hoher ESD-Festigkeit und Verfahren zu seiner Herstellung A light-emitting semiconductor device of high ESD strength and process for its preparation |
| 05/31/2001 | DE19926801C2 Einsteckmodul für gekapselte Laserdioden Plug-in for encapsulated laser diodes |
| 05/31/2001 | DE10033724A1 Wellenlängenstabilisierte Lichtquelleneinrichtung A wavelength stabilized light source means |
| 05/31/2001 | CA2392008A1 Mode-selective facet layer for pump laser |
| 05/31/2001 | CA2360502A1 Optical semiconductor device with multiple quantum well structure |
| 05/30/2001 | EP1104061A2 Semiconductor laser array and optical scanner |
| 05/30/2001 | EP1104060A2 Optical semiconductor device and process for producing the same |
| 05/30/2001 | EP1104059A2 Structure and method for index-guided inner stripe laser diode structure |
| 05/30/2001 | EP1104058A2 Semiconductor optical device having a compound semiconductor layer including aluminium |
| 05/30/2001 | EP1104057A2 High-power semiconductor laser device having current confinement structure and index-guided structure |
| 05/30/2001 | EP1104056A1 A polarization controlled vertical-cavity surface-emitting laser |
| 05/30/2001 | EP1104055A2 Laser light source apparatus and OTDR apparatus |
| 05/30/2001 | EP1104054A1 Semiconductor laser |
| 05/30/2001 | EP1104053A2 Semiconductor laser module |
| 05/30/2001 | EP1104031A2 Nitride semiconductor, nitride semiconductor device, semiconductor light emiting device and method of fabricating the same |
| 05/30/2001 | EP1103091A1 Electro-optical semiconductor device with a polyimide/silicon oxide bi-layer beneath a metal contact layer |
| 05/30/2001 | EP1103076A1 Zinc oxide films containing p-type dopant and process for preparing same |
| 05/30/2001 | CN2432705Y High power laser diode module |
| 05/29/2001 | US6240119 Apparatus for providing a stabilized laser source |
| 05/29/2001 | US6240118 Multichannel laser transmitter with a single output port |
| 05/29/2001 | US6240116 Laser diode array assemblies with optimized brightness conservation |
| 05/29/2001 | US6240115 Epitaxial facet formation for laser diodes based on III-V material systems |
| 05/29/2001 | US6240114 Multi-quantum well lasers with selectively doped barriers |
| 05/29/2001 | US6240113 Microlaser-based electro-optic system and associated fabrication method |
| 05/29/2001 | US6240109 Wavelength stabilization of wavelength division multiplexed channels |
| 05/29/2001 | US6239916 Optical transmitter device |
| 05/29/2001 | US6239901 Light source utilizing a light emitting device constructed on the surface of a substrate and light conversion device that includes a portion of the substrate |
| 05/29/2001 | US6239490 P-contact for a Group III-nitride semiconductor device and method of making same |
| 05/29/2001 | US6239454 Net strain reduction in integrated laser-modulator |
| 05/29/2001 | US6239033 Making a device using nitride iii-v compound semiconductors on one major surface of a single-crystal substrate; thinning said single-crystal substrate by processing the other major surface |
| 05/29/2001 | US6239005 A platinum layer is epitaxially grown in a crystal orientation of by sputtering; after annealing at 600-900 degrees c., a buffer layer made of gallium nitride is epitaxially grown on the platinum layer |
| 05/29/2001 | US6238947 That permits etching of gan based compound semiconductor layers that allows the formation near a light-emitting layer of a current blocking layer for defining a current injection region |
| 05/29/2001 | US6238945 Intermediate layer includes a group iii-nitride semiconductor in which atoms of a group v element other than nitrogen have been substituted for a fraction of nitrogen atoms. |
| 05/29/2001 | US6238944 Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source |
| 05/29/2001 | US6238943 Optical semiconductor device and a method of manufacturing the same |
| 05/29/2001 | US6238811 Comprising a magnet and a semiconductor material consisting of a mixture of p-type and n-type semiconductor powders; concurrent generation of both an electrostatic field and a magnetostatic field; medical equipment |
| 05/29/2001 | US6238100 Optical module and a method for fabricating a same |
| 05/29/2001 | CA2212736C A laser |
| 05/29/2001 | CA2046625C Impedance-matching coupler |
| 05/29/2001 | CA2034658C Optical power amplifier with al203 with erbium doped active fiber |
| 05/26/2001 | CA2326860A1 Semiconductor optical device having a compound semiconductor layer including aluminum |