Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
09/2003
09/30/2003US6627953 High density electronic circuit modules
09/30/2003US6627923 Resonant microcavities
09/30/2003US6627922 Chip-type semiconductor light emitting device
09/30/2003US6627921 Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
09/30/2003US6627872 Semiconductor optical sensing apparatus with reliable focusing means and casing structure
09/30/2003US6627552 Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same
09/30/2003US6627521 Semiconductor light emitting element and manufacturing method thereof
09/30/2003US6627482 Mass production technique for surface mount optical device with a focusing cup
09/30/2003US6627469 Methods for forming semiconductor lenses on substrates
09/30/2003US6627115 Electroluminescent phosphor powders, methods for making phosphor powders and devices incorporating same
09/30/2003US6626566 Compounds for electronic devices
09/25/2003WO2003079400A2 Electronic device, method, monomer and polymer
09/25/2003WO2003078171A1 Optical write head
09/25/2003WO2003032024A3 Graded thickness optical element and method of manufacture therefor
09/25/2003US20030181805 Spectroscopy light source
09/25/2003US20030181122 Producing self-aligned and self-exposed photoresist patterns on light emitting devices
09/25/2003US20030181057 Method for roughening semiconductor surface
09/25/2003US20030180982 Retrograde well structure for a CMOS imager
09/25/2003US20030180980 Implantation for current confinement in nitride-based vertical optoelectronics
09/25/2003US20030180977 Semiconductor light emitting device and fabrication method thereof
09/25/2003US20030180580 GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits
09/25/2003US20030179548 Flexible interconnect structures for electrical devices and light sources incorporating the same
09/25/2003US20030178711 Semiconductor laser device
09/25/2003US20030178702 Light emitting semiconductor device and method of fabricating the same
09/25/2003US20030178691 Wing-shaped surface mount package for light emitting diodes
09/25/2003US20030178642 Semiconductor light-emitting devices
09/25/2003US20030178634 Method for manufacturing gallium nitride compound semiconductor
09/25/2003US20030178633 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
09/25/2003US20030178632 Opto-electronic semiconductor component
09/25/2003US20030178631 P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source
09/25/2003US20030178629 Semiconductor light emission element, semiconductor composite element and process for producing semiconductor light emission element
09/25/2003US20030178627 Led module
09/25/2003US20030178626 Semiconductor light-emitting element and method of manufacturing the same
09/25/2003US20030177980 Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element
09/25/2003US20030177636 Method of manufacturing power light emitting diodes
09/25/2003DE20309450U1 White-light emitting device combining fluorescent material with light-emitting diode, mixes light emitted with that produced by excitation
09/25/2003DE20307468U1 Light emitting diode circuit on three-layer board, includes through-contacts for thermal dissipation at diode contact areas
09/24/2003EP1347517A1 Light emitting device
09/24/2003EP1347504A2 Process for producing semiconducting bodies with a layer sequence deposited by MOVPE
09/24/2003EP1346255A2 Variable focal length micro lens array field curvature corrector
09/24/2003CN1444776A Highly efficient luminescent material
09/24/2003CN1444775A Illumination device with at least one LED as light source
09/24/2003CN1444295A Device and method for mfg. GaN base
09/24/2003CN1444287A Solid camera element and its mfg. method
09/24/2003CN1444271A Solid luminous device packaged radiating member and its making method
09/24/2003CN1444254A Nitride semiconductor, semiconductor device and mfg. method thereof
09/24/2003CN1444066A Optical coupling structure of optical communication miniature assemby and optical fibre
09/24/2003CN1122318C Silicon-base dual potential barrier structure tunnel luminous diode and its manufacture method
09/23/2003US6625357 Method for fabricating fiducials for passive alignment of opto-electronic devices
09/23/2003US6625188 Optical semiconductor device provided with high-NA lens
09/23/2003US6624838 Semiconductor-chip control apparatus and control method and image recording apparatus and its control method
09/23/2003US6624505 Packaged integrated circuits and methods of producing thereof
09/23/2003US6624491 Diode housing
09/23/2003US6624442 Method of forming p-n junction on ZnO thin film and p-n junction thin film
09/23/2003US6623998 Method for manufacturing group III nitride compound semiconductor device
09/23/2003US6623877 Usable for substrate of semiconductor device such as light-emitting diode or high speed IC chip
09/23/2003US6623670 Method of molding a transparent coating member for light-emitting diodes
09/23/2003US6623560 Crystal growth method
09/23/2003US6623171 Socket and a system for optoelectronic interconnection and a method of fabricating such socket and system
09/23/2003US6623142 Method and apparatus for correcting optical non-uniformities in a light emitting diode
09/22/2003WO2003080764A1 Nitride phosphor and method for preparation thereof, and light emitting device
09/18/2003WO2003077312A1 Semiconductor device using semiconductor chip
09/18/2003WO2003069419A3 An artificial environment module
09/18/2003WO2003058588A3 Energy sensing light emitting diode display
09/18/2003WO2003034484A3 A method for forming a layered semiconductor structure and corresponding structure
09/18/2003WO2003007389A3 Led-module for illuminating devices
09/18/2003WO2002061814A3 Method of manufacturing optical devices and related improvements
09/18/2003WO2002048701A9 Nanosensors
09/18/2003US20030176048 Process of altering a wavelength of a light emitting diode
09/18/2003US20030176003 Highly doped III-nitride semiconductors
09/18/2003US20030176001 Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device
09/18/2003US20030174975 Optical connector
09/18/2003US20030174504 Threating device
09/18/2003US20030173892 Display apparatus and method for producing the same
09/18/2003US20030173602 Light-emitting diode with enhanced brightness and method for fabricating the same
09/18/2003US20030173599 Semiconductor device and fabrication method therefor
09/18/2003US20030173578 Light emitting diode containing a layer of highly doped n-type aluminum-gallium nitride; a layer of multiple quantum wells having a first side coupled to the n-type nitride layer, and other side with p-type nitride layer
09/18/2003US20030173577 Chip scale package and method of fabricating the same
09/18/2003US20030173575 A multilayer structure containing a radiation- generating active region has assigned to it a window layer for coupling out radiation
09/18/2003US20030173574 Semiconductor light emitting device
09/18/2003US20030173573 Pn-junction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode
09/18/2003US20030173572 Retrograde well structure for a CMOS imager
09/18/2003US20030173571 Oxygen-doped Al-containing current blocking layers in active semiconductor devices
09/18/2003US20030173569 Receiving optics and photosemiconductor device having the same
09/18/2003US20030173568 Light-emitting device and method for manufacturing the same
09/18/2003US20030173560 Nitride-based semiconductor device and manufacturing method thereof
09/18/2003US20030173541 Colloidal nanocrystals with high photoluminescence quantum yields and methods of preparing the same
09/17/2003EP1345276A2 Semiconductor light emitting device
09/17/2003EP1345275A1 Method for roughening semiconductor surface
09/17/2003EP1345274A2 Photo-detecting device, photo-emitting device and optical wireless communication device
09/17/2003EP1344260A2 Group iii nitride light emitting devices with gallium-free layers
09/17/2003EP1344255A1 Improved light emitting diode
09/17/2003EP1344246A2 Method for making a substrate in particular for optics, electronics or optoelectronics and resulting substrate
09/17/2003EP1343927A2 Gallium nitride materials and methods for forming layers thereof
09/17/2003CN2574225Y High-lightness LED
09/17/2003CN2574224Y Support for mfg. power type LED
09/17/2003CN2573853Y Long service life LED signal lamp
09/17/2003CN1443385A 半导体激光器件 The semiconductor laser device
09/17/2003CN1443374A Light-emitting-diode chip comprising sequence of GAN-based epitaxial layers which emit radiation, and method for producing same
09/17/2003CN1443373A Fabrication of semiconductor materials and devices with controlled electrical conductivity
1 ... 865 866 867 868 869 870 871 872 873 874 875 876 877 878 879 880 881 882 883 884 885 ... 994