Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
11/2003
11/25/2003US6652154 Optical connector
11/25/2003US6652123 Light emitting diode display having heat sinking circuit rails
11/20/2003WO2003096761A1 Led diming controller
11/20/2003WO2003096757A1 Feedback enhanced ligth emitting device
11/20/2003WO2003096437A2 Silicon and silicon-germanium light-emitting device, methods and systems
11/20/2003WO2003096436A1 Light emitting element drive device and electronic device having light emitting element
11/20/2003WO2003096435A1 Light emitting element drive device and electronic device having light emitting element
11/20/2003WO2003096387A2 High efficiency solid-state light source and methods of use and manufacture
11/20/2003WO2003052749A3 Optical readout device
11/20/2003WO2003019072A9 Color temperature-regulable led light
11/20/2003WO2002061847A3 Light emitting diodes including modifications for light extraction and manufacturing methods therefor
11/20/2003US20030216011 Light-emitting gallium nitride-based compound semiconductor device
11/20/2003US20030215234 Optical component and optical transmitter-receiver for use in two-way optical communication
11/20/2003US20030215022 OFDM detection apparatus and method for networking devices
11/20/2003US20030214818 Surface light emitting device
11/20/2003US20030214807 Light-emitting diode with silicon carbide substrate
11/20/2003US20030214725 Color display device
11/20/2003US20030214691 Display devices using feedback enhanced light emitting diode
11/20/2003US20030214616 Image display device and light emission device
11/20/2003US20030214247 Light emitting device and a method of manufacturing the same
11/20/2003US20030214233 Light emitting diode
11/20/2003US20030214024 Electronic part and its manufacturing method
11/20/2003US20030213969 GaN based LED lighting extraction efficiency using digital diffractive phase grating
11/20/2003US20030213968 Imageable bottom anti-reflective coating for high resolution ligthography
11/20/2003US20030213967 Multicolor light emitting device; vertically stacked layers of double heterostructure devices with longest wavelength on top
11/20/2003US20030213965 Luminescent diode chip that is flip-chip mounted on a carrier, and method for production thereof
11/20/2003US20030213964 III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same
11/20/2003US20030213963 High speed electronic interconnection using a detachable substrate
11/20/2003US20030213950 Alternative substrates for epitaxial growth
11/20/2003US20030213949 Epitaxial substrates and semiconductor devices
11/19/2003EP1363477A2 Electric circuit and method for monitoring the integrity of a Led-array
11/19/2003EP1363335A2 White color light emitting device
11/19/2003EP1363334A1 Gallium nitride-based compound semiconductor device with a ZnO electrode
11/19/2003EP1363327A2 High speed electronic interconnection using a detachable substrate
11/19/2003EP1363322A2 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
11/19/2003EP1017735B1 Compounds for electronic devices
11/19/2003CN2587063Y Outer heat abstractor for high power light-emitting diode
11/19/2003CN1457539A Nitride based semiconductor laser element and method for fabricating the same
11/19/2003CN1457220A Active matrix organic electrogenerated luminescent device and manufacturing method thereof
11/19/2003CN1457105A Organic electroluminescent device
11/18/2003US6650048 Ventilated light emitting diode matrix panel
11/18/2003US6650044 Stenciling phosphor layers on light emitting diodes
11/18/2003US6650018 High power, high luminous flux light emitting diode and method of making same
11/18/2003US6649993 Simplified upper electrode contact structure for PIN diode active pixel sensor
11/18/2003US6649946 Light source using a yellow-to-red-emitting phosphor
11/18/2003US6649943 Group III nitride compound semiconductor light-emitting element
11/18/2003US6649942 Nitride-based semiconductor light-emitting device
11/18/2003US6649941 Flip-chip device
11/18/2003US6649939 Light-emitting diode with a structured surface
11/18/2003US6649494 Manufacturing method of compound semiconductor wafer
11/18/2003US6649493 Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
11/18/2003US6649440 Aluminum indium gallium nitride-based LED having thick epitaxial layer for improved light extraction
11/18/2003US6649437 Method of manufacturing high-power light emitting diodes
11/18/2003US6649434 Hetero-epitaxially grown at a high temperature of >/= 500 degrees C. and supply of oxygen is stopped and gradual cooling
11/18/2003US6649432 Resonant microcavity display utilizing mirrors exhibiting anomalous phase dispersion
11/18/2003US6649288 Nitride film
11/18/2003US6649287 Transistor, few or no cracks
11/18/2003US6649210 Homogeneous films formed on a substrate having a large screen by vacuum evaporation; small changes in the film thickness and density on deposition; controlled using an equation based on distance, thickness and angle against the perpendicular
11/18/2003US6648975 Method and apparatus for fabricating quantum dot functional structure, quantum dot functional structure, and optically functioning device
11/15/2003CA2427559A1 White color light emitting device
11/13/2003WO2003094248A1 Light-receiving panel or light-emitting panel, and manufacturing method thereof
11/13/2003WO2003094224A1 Process for manufacturing substrates with detachment of a temporary support, and associated substrate
11/13/2003WO2003094218A2 Method of growing monocrystalline oxide having a semiconductor device thereon
11/13/2003WO2003093393A1 Wavelength-converting reactive resinous compound and light-emitting diode component
11/13/2003WO2003068699A8 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
11/13/2003WO2003038873A3 Removing an amorphous oxide from a monocrystalline surface
11/13/2003WO2003019693A3 Solutions of organic semiconductors
11/13/2003WO2003017388A3 Method and device for selectively emitting photons
11/13/2003WO2002073705A8 Radiation-emitting semiconductor component and method for producing the same
11/13/2003US20030212230 Using mixture of curing agent containing anhydride and zinc octanoate
11/13/2003US20030211804 LED light source with lens and corresponding production method
11/13/2003US20030211710 Method of manufacturing III-V group compound semiconductor
11/13/2003US20030211651 Bandgap engineering of tfel devices
11/13/2003US20030211647 Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
11/13/2003US20030211645 Gallium nitride-based semiconductor light emitting device and method
11/13/2003US20030210545 Illumination lamp equipment
11/13/2003US20030209723 Gallium nitride-based compound semiconductor device
11/13/2003US20030209722 Light-emitting element and method of fabrication thereof
11/13/2003US20030209720 Multilayer; intermetallics overcoating sapphire substrate
11/13/2003US20030209717 Semiconductor light-emitting element and method of fabrication thereof
11/13/2003US20030209715 Semiconductor device with ohmic electrode formed on compound semiconductor having wide band gap and its manufacture method
11/13/2003US20030209714 Light emitting diodes; multicolor light
11/13/2003US20030209705 Ultraviolet light emitting diode
11/13/2003US20030209704 Light emitting device
11/13/2003US20030209703 Ferritin; controlling particle size; combustion ; forming metal aggregate
11/13/2003US20030209185 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
11/13/2003US20030209105 Preparation of nanocrystallites
11/13/2003DE20313195U1 Lamp chain, e.g. for decoration, has LED chips, each with first electrode permanently attached/electrically connected to first conductor, second electrode electrically connected to second conductor
11/12/2003EP1361616A1 Compound semiconductor element based on group iii element nitride
11/12/2003EP1361601A2 Method for producing a long wavelength indium gallium arsenide nitride (InGaAsN) active region
11/12/2003EP1360713A1 Light emitting semiconductor package
11/12/2003EP1262003B1 Quantum cascade laser and method for making same
11/12/2003CN2586251Y Packing structure of white light LED
11/12/2003CN1455960A Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor
11/12/2003CN1455462A Luminous diode
11/12/2003CN1455288A Light-emitting assembly
11/11/2003US6646292 Semiconductor light emitting device and method
11/11/2003US6646289 optronic integrally packaged die.
11/11/2003US6645885 Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
11/11/2003US6645829 Optoelectronic integrated circuit (OEIC); outermost epitaxial layer exposed to the chemical-mechanical processing equipment is always silicon or silicon dioxide
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