Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
08/2008
08/21/2008US20080199982 Fabrication Process for Package With Light Emitting Device On A Sub-Mount
08/21/2008US20080199728 Deep red phosphor and method of manufacturing the same
08/21/2008US20080199127 Shared light pipe for message indicator and light sensor
08/21/2008US20080198594 Optical module
08/21/2008US20080198593 Light Source for an Image-Generating Unit
08/21/2008US20080198592 Semiconductor light emitting device array chip and exposure light source apparatus
08/21/2008US20080198573 Illumination System Comprising Color Deficiency Compensating Luminescent Material
08/21/2008US20080198552 Package board and method for manufacturing thereof
08/21/2008US20080198299 Light source unit, liquid crystal display having the same, and method thereof
08/21/2008US20080198031 Method of assembling semiconductor devices with leds
08/21/2008US20080197789 Light emitting device
08/21/2008US20080197764 Electroluminescence Light Source
08/21/2008US20080197452 gallium nitride or indium gallium nitride or aluminum gallium nitride single crystal substrate; diameter not less than 25.4 mm; thickness not less than 150 mu m.; substrate satisfies that a ratio of Delta alpha / alpha is not more than 0.1; light emitting diodes; high quality; heat resistance
08/21/2008US20080197378 Group III Nitride Diodes on Low Index Carrier Substrates
08/21/2008US20080197376 Method for Producing an Optical, Radiation-Emitting Component and Optical, Radiation-Emitting Component
08/21/2008US20080197375 Lateral-type light-emitting diode and method of manufacture thereof
08/21/2008US20080197374 High-power light-emitting diode
08/21/2008US20080197373 Light Emitting Diode
08/21/2008US20080197372 Semiconductor structures and method for fabricating the same
08/21/2008US20080197371 Electro-Optical Element with Controlled, in Particular Uniform Functionality Distribution
08/21/2008US20080197370 Light emitting diode structure and manufacturing method thereof
08/21/2008US20080197369 Double flip semiconductor device and method for fabrication
08/21/2008US20080197368 Optoelectronic Component and Package For an Optoelectronic Component
08/21/2008US20080197367 Method of super flat chemical mechanical polishing technology and semiconductor elements produced thereof
08/21/2008US20080197366 White light emitting diode module
08/21/2008US20080197365 Light emitting device
08/21/2008US20080197364 Light-emitting device
08/21/2008US20080197363 Light Emitting Device Having a Plurality of Light Emitting Cells and Method of Fabricating the Same
08/21/2008US20080197362 Semiconductor led, opto-electronic integrated circuits (oeic), and method of fabricating oeic
08/21/2008US20080197358 Wide-bandgap semiconductor devices
08/21/2008US20080197341 Method for making a multiple-wavelength opto-electronic device including a superlattice
08/21/2008US20080197340 Multiple-wavelength opto-electronic device including a superlattice
08/21/2008US20080197320 White Light Emitting Device
08/21/2008DE112007000059T5 Verfahren zum Ausbilden einer Verbindungshalbleiterschicht von P-Typ A method for forming a compound semiconductor layer of P-type
08/21/2008DE112006002540T5 Reflektierendes Material und Reflektor für lichtemittierende Diode Reflective material and reflector for light-emitting diode
08/21/2008DE112006002296T5 Verfahren zur Herstellung einer Halbleiterschicht und Licht-emittierenden Diode A process for producing a semiconductor layer and light-emitting diode
08/21/2008DE112005000714T5 Lichtemissionshalbleitervorrichtung Light-emitting semiconductor device
08/21/2008DE102008009769A1 Doppel-Flip-Halbleiterbauelement und Herstellungsverfahren Double flip-semiconductor device and manufacturing method
08/21/2008DE102008008836A1 Lichtemissionseinrichtung Light-emitting device
08/21/2008DE102008008057A1 Verfahren zur Herstellung von in Kompaktgehäusen untergebrachten Lichtemissionsvorrichtungen mit mehreren optischen Elementen durch Formpressen A process for preparing accommodated in compact housings light emitting device having a plurality of optical elements by molding
08/21/2008DE102008007835A1 Transparenter LED-Chip Transparent LED chip
08/21/2008DE102007006883A1 Elongate lighting appliance i.e. LED festoon lamp, has electrical contacts formed by metal coverings, which respectively lie on front sides of board ends, where coverings are soldered with one or both sides or with front side of board
08/21/2008DE102007002403A1 Illuminating arrangement for e.g. dome light of vehicle, has light decoupling surface turned away from semiconductor components, and side surfaces running perpendicular or transverse to light outlet surface
08/20/2008EP1959530A1 Gallium nitride semiconductor light emitting element
08/20/2008EP1959507A1 Radiation-emitting semiconductor element
08/20/2008EP1959506A2 Method of manufacturing a semiconductor light-emitting device
08/20/2008EP1959505A1 Mounting lenses for LED modules
08/20/2008EP1959504A2 Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC
08/20/2008EP1959503A1 Semiconductor light emitting element and method for manufacturing semiconductor light emitting element
08/20/2008EP1959033A2 Group III nitride semiconductor substrate
08/20/2008EP1958271A2 A light-emitting device using voltage switchable dielectric material
08/20/2008EP1958270A1 Light emitting diode module
08/20/2008EP1958269A1 Luminescent ceramic layer for a light emitting device
08/20/2008EP1958268A1 Optical element, production method therefor, and composite component provided with an optical element
08/20/2008EP1958267A1 Silicon light emitting device
08/20/2008EP1958266A1 Silicon-based light emitting diode using side reflecting mirror
08/20/2008EP1958257A2 Light emitting diode construction
08/20/2008EP1957857A1 Multiple piece reflective angle transformer
08/20/2008EP1957607A1 Display device with solid state fluorescent material
08/20/2008EP1786884B1 Light-emitting body, lighting device and display device using the same
08/20/2008EP1264011A4 Iii-v nitride substrate boule and method of making and using the same
08/20/2008EP1142032B1 Light emitting diode comprising a thin phosphor-conversion film
08/20/2008CN201104323Y LED apparatus
08/20/2008CN201103878Y LED light source and lamp using the same
08/20/2008CN201103860Y High brightness LED bracket
08/20/2008CN201103859Y Rectangular pyramid type LED module combined lamp wick bracket
08/20/2008CN201103857Y Integrated LED light source component
08/20/2008CN201103846Y Led
08/20/2008CN101248539A Color converted light emitting diode
08/20/2008CN101248538A Method for producing an LED chip and led chip
08/20/2008CN101248537A Blue led with roughened high refractive index surface layer for high light extraction
08/20/2008CN101248535A Light emitting diodes and lasers diodes with color converters
08/20/2008CN101248534A Electroluminescent device with a light conversion element
08/20/2008CN101248533A Light-emitting device, backlight using same, and liquid crystal display
08/20/2008CN101248384A Etendue efficient combination of multiple light sources
08/20/2008CN101248221A Process for producing semiconductor substrate
08/20/2008CN101247687A 发光装置 Light-emitting device
08/20/2008CN101247022A Method for producing split crack mirror face of gallium nitride semiconductor component
08/20/2008CN101246945A Edge transmitting type LED packaging structure
08/20/2008CN101246944A Semiconductor light emitting device
08/20/2008CN101246943A Preparation of Si based micro-nano luminous material
08/20/2008CN101246942A Light emitting diode and laser and its production method
08/20/2008CN101246941A Preparation of II-VI family semiconductor CdTe quantum point with H2Te as tellurium source
08/20/2008CN101246940A Flat plate radiation type LED and production method thereof
08/20/2008CN101246939A Blue-ray LED chip
08/20/2008CN101246938A Leadframe-based packages for solid state light emitting devices and methods of forming leadframe-based packages for solid state light emitting devices
08/20/2008CN101246937A Method for forming two-dimension graphic pattern by nano-sphere
08/20/2008CN101246936A White light illuminating device
08/20/2008CN101246935A Light emitting diode and heat radiating device thereof
08/20/2008CN101246934A LED element with improved reflector plate
08/20/2008CN101246933A Soldering pad manufacturing process used for LED Epi wafer
08/20/2008CN101246861A Package board and method for manufacturing thereof
08/20/2008CN101246820A Preparation of gallium nitride based epitaxial film
08/20/2008CN101245227A Epoxy conductive silver glue for LED and method for manufacturing same
08/20/2008CN101244533A Method of ultra-flation chemico-mechanical polishing technique and semiconductor component manufactured by using the method
08/20/2008CN100413107C Light emitting device
08/20/2008CN100413106C Compound semiconductor light-emitting device
08/20/2008CN100413105C Boron phosphide-based semiconductor light-emitting device
08/20/2008CN100413104C Compound semiconductor light-emitting device and method of producing same
08/20/2008CN100413103C Nitride semiconductor light emitting device, and method of fabricating nitride semiconductor light emitting device
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