Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
09/2008
09/25/2008US20080231214 Light emitting device having various color temperature
09/25/2008US20080231170 Wavelength Converter, Light-Emitting Device, Method of Producing Wavelength Converter and Method of Producing Light-Emitting Device
09/25/2008US20080231169 Light emitting device and method for manufacturing the same
09/25/2008US20080231162 Lighting device and display device provided with the same
09/25/2008US20080230904 Gallium Nitride-Based III-V Group Compound Semiconductor Device and Method of Manufacturing the Same
09/25/2008US20080230800 N-Type Group III Nitride Semiconductor Layered Structure
09/25/2008US20080230799 Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface
09/25/2008US20080230798 Active matrix organic electroluminescent substrate and method of making the same
09/25/2008US20080230797 LED module and manufacturing method thereof
09/25/2008US20080230796 Surface mount type light-emitting diode package device and light-emitting element package device
09/25/2008US20080230795 Light emitting diode
09/25/2008US20080230794 Pn Junction Type Group III Nitride Semiconductor Light-Emitting Device
09/25/2008US20080230793 Patterned Substrate For Light Emitting Diode and Light Emitting Diode Employing the Same
09/25/2008US20080230792 Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface
09/25/2008US20080230791 Optoelectronic device
09/25/2008US20080230790 Semiconductor light emitting device
09/25/2008US20080230789 Light emitting device, method of manufacturing the same and monolithic light emitting diode array
09/25/2008US20080230788 Liquid crystal display panel
09/25/2008US20080230781 Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method
09/25/2008US20080230780 Group III Nitride Semiconductor Multilayer Structure
09/25/2008US20080230768 Thin film transistor and organic light emitting device including thin film transistor
09/25/2008US20080230766 Light emitting device
09/25/2008US20080230765 Light emitting diode
09/25/2008DE112006003211T5 Lichtemittierendes Element The light-emitting element
09/25/2008DE112006003139T5 Ebene Beleuchtungsvorrichtung und Verfahren zum Herstellen derselben Planar lighting device and method of manufacturing the same
09/25/2008DE112006003010T5 Licht ermittierendes Element, bereitgestellt mit Verbindungsanschlüssen Light ermittierendes element provided with connection terminals
09/25/2008DE102008009820A1 Leuchteneinheit für einen Fahrzeugscheinwerfer Lamp unit for a vehicle headlamp
09/25/2008DE102007013986A1 Optoelectronic component e.g. LED, has protective structure comprising material e.g. ceramic material or metal oxide e.g. zinc oxide, attached to structural element and/or to contact terminal, where material is provided as pasty mass
09/25/2008DE102007012359A1 Epitaxial LED chip bond pad manufacturing method, involves subjecting surface of metal layer by surface treatment i.e. surface cleaning, to increase adhesive strength, and separating metal layer from surface of another layer
09/24/2008EP1973175A1 Light emitting device and illumination instrument
09/24/2008EP1973169A1 Semiconductor module for light reception or light emission
09/24/2008EP1973161A2 Light emitting diode
09/24/2008EP1972008A2 Silicon carbide dimpled substrate
09/24/2008CN201122607Y Light emitting diode structure
09/24/2008CN201122606Y Power type LED encapsulation base plate
09/24/2008CN201122605Y LED automatic pin cutting machine
09/24/2008CN201121846Y High power LED reflectoscope
09/24/2008CN201121835Y LED optical lens
09/24/2008CN201121811Y Line lamp capable of arbitrarily modeling
09/24/2008CN101273473A Radiation-emitting element and method for producing a radiation-emitting element
09/24/2008CN101273472A Composite host-seed substrate for growing an III-V light-emitting device
09/24/2008CN101273471A Optoelectronic component which emits electromagnetic radiation, and method for production of an optoelectronic component
09/24/2008CN101273470A Optoelectronic semiconductor chip and method for producing it
09/24/2008CN101273469A III-v light emitting device
09/24/2008CN101273468A Optoelectronic semiconductor component with current spreading layer
09/24/2008CN101273467A Process for fabrication of nitride semiconductor light emitting device
09/24/2008CN101273109A Fluorescent substance, process for producing the same, and light emitting device using said fluorescent substance
09/24/2008CN101273108A Silicate phosphor for uv and long-wavelength excitation and preparation method thereof
09/24/2008CN101273089A Resin composition for sealing optical semiconductor element and optical semiconductor device obtained by using the same
09/24/2008CN101272997A Sintered ceramics for mounting light emitting element
09/24/2008CN101271953A Semiconductor light emitting element
09/24/2008CN101271952A Gallium nitride based semiconductor light emitting device and method of manufacturing same
09/24/2008CN101271951A LED chip encapsulation body and encapsulation thereof
09/24/2008CN101271950A Blue-green luminous semiconductor and fluorescent powder thereof
09/24/2008CN101271949A Production method of LED
09/24/2008CN101271948A LED encapsulation structure and forming method thereof
09/24/2008CN101271947A Controllable asymmetric doping potential barrier nano silicon based luminous device and method for producing the same
09/24/2008CN101271946A LED module
09/24/2008CN101271945A Electroluminescent panel, its production method and electroluminescent display device
09/24/2008CN101271944A LED wafer encapsulation body and encapsulation thereof
09/24/2008CN101271943A LED module structure and manufacturing method thereof
09/24/2008CN101271942A Luminous element
09/24/2008CN101271941A Encapsulation colloid structure of LED
09/24/2008CN101271940A Semiconductor illuminating device and production method thereof
09/24/2008CN101271939A Luminous device with open loop control and production method thereof
09/24/2008CN101271938A Multi-wavelength LED element and multi-wavelength luminous module
09/24/2008CN101271917A Antistatic structure of semiconductor lighting device and manufacturing method thereof
09/24/2008CN101271916A Electrostatic-resistant gallium nitride illumination device and production method thereof
09/24/2008CN101271915A 发光二极管 Led
09/24/2008CN101271887A Semiconductor light emitting device
09/24/2008CN101271884A Luminous source encapsulation body
09/24/2008CN101270869A LED lighting module
09/24/2008CN101270864A Production method of illuminating device
09/24/2008CN101270854A 白色光源装置 White light source device
09/24/2008CN101270286A White radiation fluorescent powder for LED excitated with ultraviolet and near ultraviolet and preparation method thereof
09/24/2008CN101270282A Rare earth red fluorescent powder for light emitting diode and preparation method thereof
09/24/2008CN100421278C Organic LED luminous layer and organic LED display panel using same
09/24/2008CN100421273C Epitaxial wafer for led and light emitting diode
09/24/2008CN100421272C Method for making GaN-based blue light light-emitting diode with photon microstructure
09/24/2008CN100421271C Nanowire light-emitting element and manufacturing method therefor
09/24/2008CN100421270C Light emitting element and manufacturing method thereof
09/24/2008CN100421269C Packaging device for LED in low thermal resistance
09/24/2008CN100421268C LED and its mfg. method
09/24/2008CN100421267C Jacketed LED assemblies and light strings containing same
09/24/2008CN100421266C Light-emitting device having light-emitting elements
09/24/2008CN100421213C Method for fabricating group iii nitride compound semiconductors and group iii nitride compound semiconductor devices
09/24/2008CN100421010C Backlight unit and liquid crystal display having the same
09/24/2008CN100420728C Method for converting rare-earth triple primary-color material into white light by bluish violet diode
09/24/2008CN100420569C Free-standing (Al, Ga, In)N and parting method for forming same
09/23/2008US7427838 Light source controlling circuit and portable electronic apparatus
09/23/2008US7427806 Semiconductor component emitting and/or receiving electromagnetic radiation, and housing base for such a component
09/23/2008US7427805 Light-emitting diode chip package body and packaging method thereof
09/23/2008US7427785 Nitride-based light emitting device and manufacturing method thereof
09/23/2008US7427784 COB-typed LED package with phosphor
09/23/2008US7427783 Top emission organic light emitting diode display using auxiliary electrode to prevent voltage drop of upper electrode
09/23/2008US7427782 Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
09/23/2008US7427772 Semiconductor light emitting device substrate and method of fabricating the same
09/23/2008US7427524 Optoelectronic device packaging assemblies and methods of making the same
09/23/2008US7427523 Method of making light emitting device with silicon-containing encapsulant
09/23/2008US7427366 phosphorescent mixtures comprising alkaline earth metal thiogallates activated with europium, praseodymium and/or halides, used in light emitting devices, to convert light to higher wavelengths