Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
03/2009
03/11/2009EP2034525A1 Nitride semiconductor light emitting element
03/11/2009EP2034524A1 Nitride semiconductor light emitting element
03/11/2009EP2034523A1 Nitride semiconductor light-emitting device
03/11/2009EP2033419A2 Device with modal lighting control and method thereof
03/11/2009EP2033282A2 Optoelectronic device for high-speed data transfer
03/11/2009EP2033238A2 Semiconductor light emitting device including porous layer
03/11/2009EP2033237A1 Led device with re-emitting semiconductor construction and reflector
03/11/2009EP2033236A1 Led device with re-emitting semiconductor construction and optical element
03/11/2009EP2033235A2 Solid state light emitting device and method of making same
03/11/2009EP2033234A1 Led device with re-emitting semiconductor construction and converging optical element
03/11/2009EP2033233A1 Low profile side emitting led
03/11/2009EP2033232A1 Lighting device
03/11/2009EP1387412B1 Light source device using led, and method of producing same
03/11/2009CN201207395Y LED having high reflection optical thin-film structure
03/11/2009CN201207391Y Surface sticking type LED, metal rack and wire holder construction thereof
03/11/2009CN201207390Y Surface sticking type LED, metal rack and wire holder construction thereof
03/11/2009CN201207388Y Heat radiation construction improvement of LED
03/11/2009CN201206820Y Heat radiation structure for LED lamp
03/11/2009CN201206818Y Radiating module
03/11/2009CN201206786Y Bulb type LED apparatus
03/11/2009CN201206739Y Novel high-power packaged LED lamp
03/11/2009CN101385152A Light emitting diode and manufacturing method thereof
03/11/2009CN101385145A Separate optical device for directing light from an led
03/11/2009CN101384852A Surface light source device and light source unit
03/11/2009CN101383393A Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
03/11/2009CN101383392A Process rotary board of LED electrode rack
03/11/2009CN101383332A Electronic element device and manufacturing process thereof
03/11/2009CN101383298A Manufacturing process of light-emitting semiconductor component
03/11/2009CN101383295A Process for producing optical semiconductor device and slice used in same process
03/11/2009CN101382657A Infrared night vision laser searchlighting machine
03/11/2009CN101382265A LED light source and lamp thereof
03/11/2009CN101382252A High-power LED lens
03/11/2009CN101381516A Room temperature vulcanized organosilicon pouring sealant for LED
03/11/2009CN100468803C Light emitting device
03/11/2009CN100468802C Indium arsenide and gallium arsenide nano structure and its manufacture method
03/11/2009CN100468801C A pink LED and its making method
03/11/2009CN100468800C Switching regulator control circuit, current drive circuit, light emitting apparatus, and information terminal apparatus
03/11/2009CN100468799C Light-emitting diode and method of manufacturing the same
03/11/2009CN100468798C Semiconductor structure comprising active zones
03/11/2009CN100468797C Semiconductor device integrated with radiating fin and manufacturing method thereof
03/11/2009CN100468796C Manufacturing method for LED flip-chip
03/11/2009CN100468795C Semiconductor illuminator integrated heat conducting/radiating moudule
03/11/2009CN100468794C Light-emitting diodes fluorescent powder coating method
03/11/2009CN100468793C Light emitting device using nitride semiconductor and fabrication method of the same
03/11/2009CN100468792C Integrated light emitting diode and production thereof
03/11/2009CN100468791C Light emitting diode with improved effience
03/11/2009CN100468790C Group III nitride LED with undoped cladding layer and multiple quantum well
03/11/2009CN100468789C Light emitting device and illuminating device using it
03/11/2009CN100468788C Electrode structure of light-emitting component
03/11/2009CN100468766C Nitride semiconductor device
03/11/2009CN100468627C Method of producing a nitride semiconductor device and nitride semiconductor device
03/11/2009CN100468169C Led
03/11/2009CN100468167C Back-light apparatus
03/11/2009CN100468165C Light emitting diode and backlight module therewith
03/10/2009US7502399 Package for a laser diode component, laser diode component and method for producing laser diode component
03/10/2009US7501753 Phosphor and blends thereof for use in LEDs
03/10/2009US7501752 Color image display unit
03/10/2009US7501749 Vehicle lamp using emitting device for suppressing color tone difference according to illumination conditions
03/10/2009US7501666 Method for forming p-type semiconductor region, and semiconductor element
03/10/2009US7501665 Semiconductor light emitting device and method of manufacturing same and semiconductor light emitting apparatus
03/10/2009US7501664 III-Nitride compound semiconductor light emitting device
03/10/2009US7501663 Semiconductor light-emitting device, and image display device and lighting unit comprising same
03/10/2009US7501662 Semiconductor light emitting element array illuminator using the same
03/10/2009US7501660 Housing for an electronic component
03/10/2009US7501659 LED device and optical detector therewith for bill validator
03/10/2009US7501657 Semiconductor light emitting device, lighting module, illumination apparatus, surface mount LED, and bullet LED
03/10/2009US7501656 Light emitting diode package with diffuser and method of manufacturing the same
03/10/2009US7501303 Reflective layer buried in silicon and method of fabrication
03/10/2009US7501295 Method of fabricating a reflective electrode for a semiconductor light emitting device
03/10/2009US7501293 Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device
03/10/2009CA2421908C Indicating light
03/05/2009WO2009029045A1 A method of manufacturing an organic electronic or optoelectronic device
03/05/2009WO2009028895A2 Method for manufacturing led device
03/05/2009WO2009028869A2 Light emitting device package and lighting apparatus using the same
03/05/2009WO2009028861A2 Light emitting device package
03/05/2009WO2009028860A2 Light emitting device and method for fabricating the same
03/05/2009WO2009028818A2 Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
03/05/2009WO2009028812A2 Light emitting device
03/05/2009WO2009028807A2 Light emitting device package and method for fabricating the same
03/05/2009WO2009028738A1 Luminescent module, and its manufacturing method
03/05/2009WO2009028689A1 Light emitting device
03/05/2009WO2009028657A1 Light emitting device
03/05/2009WO2009028656A1 Light emitting device
03/05/2009WO2009028628A1 Light emitting device
03/05/2009WO2009028627A1 Led chip mounting method
03/05/2009WO2009028612A1 Light emitting device
03/05/2009WO2009028611A1 Light-emitting device
03/05/2009WO2009028536A1 ZnO THIN FILM AND SEMICONDUCTOR ELEMENT
03/05/2009WO2009028470A1 Light-emitting device and method for manufacturing the same
03/05/2009WO2009028440A1 Display device and light emitting device
03/05/2009WO2009028156A1 Wiring member, metal component with resin and resin sealed semiconductor device, and processes for producing them
03/05/2009WO2009028145A1 High-intensity light-emitting diode manufacturing method, light-emitting element substrate and high intensity light-emitting diode
03/05/2009WO2009028058A1 Light emitting control device and the like
03/05/2009WO2009028033A1 Light source device
03/05/2009WO2009026876A1 Led housing
03/05/2009WO2009026749A1 Method for fabricating a low-resistivity ohmic contact to a p-type iii-v nitride semiconductor material at low temperature
03/05/2009WO2009026748A1 Gallium nitride light-emitting device with ultra-high reverse breakdown voltage
03/05/2009WO2009008636A3 Light emitting device package
03/05/2009WO2008105864A9 Improved light emission from silicon-based nanocrystals by sequential thermal annealing approaches
03/05/2009US20090061559 MANUFACTURE METHOD FOR ZnO-CONTAINING COMPOUND SEMICONDUCTOR LAYER
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