Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
04/2009
04/02/2009WO2009039815A1 Radiation-emitting semiconductor body
04/02/2009WO2009039812A1 Opto-electronic semiconductor body
04/02/2009WO2009039811A2 Radiation-emitting semiconductor chip
04/02/2009WO2009039805A1 Opto-electronic component and method for the production thereof
04/02/2009WO2009039804A2 Radiation-emitting components for producing linearly polarized light
04/02/2009WO2009039802A1 Method for producing a semiconductor component, and semiconductor component
04/02/2009WO2009039801A1 Radiation-emitting component with conversion element
04/02/2009WO2009039680A1 Manufacturing method of led having multi-layer lenses and the structure thereof
04/02/2009WO2009019642A3 Iii-nitride device grown on edge-dislocation template
04/02/2009WO2009006599A3 Light emitting diode illumination system
04/02/2009WO2008133660A3 Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
04/02/2009WO2008130821A3 Transparent ohmic contacts on light emitting diodes with growth substrates
04/02/2009WO2007087071A3 Housing for high-speed electro-optical assembly incorporating latching and emi shielding
04/02/2009WO2006007446A3 Photonic crystal emitter, detector, and sensor
04/02/2009WO2005060619A3 Optical display systems and methods
04/02/2009WO2005029548A3 System and process for providing multiple beam sequential lateral solidification
04/02/2009US20090087994 Method of forming fine patterns and manufacturing semiconductor light emitting device using the same
04/02/2009US20090087937 Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same
04/02/2009US20090087936 Deposition method of iii group nitride compound semiconductor laminated structure
04/02/2009US20090087934 Method of Manufacturing Nitride Semiconductor Light Emitting Element
04/02/2009US20090087931 Method of manufacturing light emitting diode package
04/02/2009US20090086479 Light source unit
04/02/2009US20090086449 Optical device and manufacturing method thereof
04/02/2009US20090086170 Quantum Photonic Imagers and Methods of Fabrication Thereof
04/02/2009US20090085467 Yellow Emitting Ce3+ Doped Calcium Silicate Phosphor and White Light Emitting Diodes Including Ce3+ Doped Calcium Silicate Phosphor
04/02/2009US20090085465 phosphor comprising alpha-type sialon crystal as main component; solid solutions; reduced in lowering of brightness, and is useful for white color LED
04/02/2009US20090085464 Resin Composition and Sheet Containing Phosphor, and Light Emitting Element Using Such Composition and Sheet
04/02/2009US20090085458 Fluorescent material and light-emitting device
04/02/2009US20090085165 Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Manufacturing Group 3-5 Nitride Semiconductor Free-Standing Subtrate, and Semiconductor Element
04/02/2009US20090085057 III-Nitride Semiconductor Light Emitting Device
04/02/2009US20090085055 Method for Growing an Epitaxial Layer
04/02/2009US20090085054 III-Nitride Semiconductor Light Emitting Device
04/02/2009US20090085053 Light emitting diode package with large viewing angle
04/02/2009US20090085052 Gan type light emitting diode device and method of manufacturing the same
04/02/2009US20090085051 Light emitting diode device
04/02/2009US20090085050 Island submount and a method thereof
04/02/2009US20090085049 Phosphor down converting element for an LED package and fabrication method
04/02/2009US20090085048 Ac light emitting diode
04/02/2009US20090085047 Integrated multi-colored LED light source with heatsink and collimator
04/02/2009US20090085046 Methods and systems relating to solid state light sources for use in industrial processes
04/02/2009US20090085045 Method for producing a matrix of individual electronic components and matrix produced thereby
04/02/2009US20090085043 Semiconductor light emitting device and method of manufacturing the same
04/02/2009US20090085039 Image display system and fabrication method thereof
04/02/2009US20090085033 Thin film transistor, pixel structure and fabrication methods thereof
04/02/2009US20090085032 Pixel structure and fabricating method thereof
04/02/2009US20090085009 Fluorescent substance for light-emitting diode
04/02/2009US20090083978 End face sensor and method of producing the same
04/02/2009DE112007001232T5 Lichtemittierendes Halbleiterelement und Verfahren zu dessen Herstellung Semiconductor light emitting element and process for its preparation
04/02/2009DE112007001207T5 Verfahren zum Herstellen eines lichtemittierenden Halbleiterelements A method of manufacturing a semiconductor light emitting element
04/02/2009DE112007000793T5 Verfahren zur Feinbehandlung eines Substrats, Verfahren zur Fertigung eines Substrats und lichtemittierende Vorrichtung A process for the fine treatment of a substrate, method for the production of a substrate and light emitting device
04/02/2009DE102008046525A1 Licht emittierende Vorrichtung Light emitting device
04/02/2009DE102008046107A1 Fahrzeugleuchte Vehicle light
04/02/2009DE102008045029A1 Radiation-emitting component for e.g. light industry, has radiation-emitting layer arranged between electrodes, and other emitting layer arranged between former layer and one of electrodes, and blocking layers arranged between layers
04/02/2009DE102008035660A1 LED-Packungsanordnung LED package arrangement
04/02/2009DE102008034299A1 Licht emittierendes Bauelement auf Nitridbasis The light emitting device nitride
04/02/2009DE102008021403A1 Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung The optoelectronic semiconductor body and method of producing the
04/02/2009DE102008012316A1 Halbleiterlichtquelle mit einer Primärstrahlungsquelle und einem Lumineszenzkonversionselement A semiconductor light source having a primary radiation source and a luminescence
04/02/2009DE102008011254A1 Carrier element's recess closing method for semiconductor component i.e. LED, involves providing screen with openings, filling of recess of carrier element by screen through screen printing of viscous mass, and hardening viscous mass
04/02/2009DE102008005345A1 Halbleiterbasiertes Bauelement, Aufnahme für ein halbleiterbasiertes Bauelement und Verfahren zur Herstellung eines halbleiterbasierten Bauelements Semiconductor-based device for receiving a semiconductor-based device and method for manufacturing a semiconductor-based device
04/02/2009DE102008005344A1 Strahlungsemittierendes Bauelement Radiation-emitting component
04/02/2009DE102008004453A1 Radiation-emitting device for data communication by glass fiber or polymer-optical fiber, has electrical absorption modulator arranged with regard to LED, where part of radiation producible by LED is modulatable by modulator
04/02/2009DE102007062041A1 Polarisierte Strahlung emittierender Halbleiterchip Polarized radiation-emitting semiconductor chip
04/02/2009DE102007061481A1 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements Radiation-emitting semiconductor component with a vertical emission direction, and method of manufacturing a radiation-emitting semiconductor component
04/02/2009DE102007059621A1 Verfahren zum Erzeugen von linear polarisiertem Licht und strahlungsemittierende Bauelemente A method for generating linearly polarized light and radiation emitting devices
04/02/2009DE102007059548A1 Optoelektronisches Bauelement und Auskoppellinse für ein optoelektronisches Bauelement Optoelectronic device and output lens for an optoelectronic component
04/02/2009DE102007053849A1 Anordnung umfassend ein optoelektronisches Bauelement Assembly comprising an optoelectronic component
04/02/2009DE102007053286A1 Verfahren zur Herstellung eines optoelektronischen Bauelements A process for producing an optoelectronic component
04/02/2009DE102007053069A1 Lichtemittierendes Bauelement mit Wellenlängenkonverter und Herstellungsverfahren The light emitting device with wavelength converter and manufacturing method
04/02/2009DE102007053067A1 Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device
04/02/2009DE102007052181A1 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements Optoelectronic component and process for producing an optoelectronic component
04/02/2009DE102007051168A1 Method for manufacturing light emitting diode-module, involves producing multiple sub-layers consisting of layer stacks on growth wafer by layer deposition or epitaxial growth
04/02/2009DE102007049799A1 Optoelektronisches Bauelement Optoelectronic component
04/02/2009DE102007046752A1 Quasi substrate for e.g. surface emitting semiconductor laser, has buffer layer sequence provided with layer pairs from semiconductor layers with indium portions that increase from one layer pair to anothe layer pair based on substrate
04/02/2009DE102007046743A1 Optoelektronisches Bauelement sowie Verfahren zu dessen Herstellung The optoelectronic component as well as methods for its preparation
04/02/2009DE102007046522A1 Semiconductor body for use in semiconductor chip, comprises semiconductor layer sequence, where thin film diode is provided with active area for generating radiation
04/02/2009DE102007046520A1 Lichtemittierendes Flächenelement und Verfahren zum Herstellen eines lichtemittierenden Flächenelementes The light-emitting surface element and method for manufacturing a light-emitting surface element
04/02/2009DE102007046519A1 Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung Thin-film LED with a mirror layer, and process for their preparation
04/02/2009DE102007046496A1 Protection encapsulation manufacturing method for Organic LED, involves executing molding process under influence of heat to form cavity at surface of encapsulation element, where cavity accommodates drying agent
04/02/2009DE102007046348A1 Strahlungsemittierendes Bauelement mit Glasabdeckung und Verfahren zu dessen Herstellung Radiation-emitting component with glass cover and process for its preparation
04/02/2009DE102007046337A1 Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements The optoelectronic semiconductor chip, optoelectronic device and methods of manufacturing an optoelectronic component
04/02/2009DE102007046075A1 LED module for lighting purpose and backlighting purpose, has printed circuit board with carrier from anodized aluminum, where conductors are attached on carrier and LED is arranged on carrier, and board stays in thermal contact with body
04/02/2009DE102007046027A1 Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur The optoelectronic semiconductor chip having a multiple quantum well structure
04/01/2009EP2043210A2 Semiconductor laser and method for producing the semiconductor laser
04/01/2009EP2043168A2 Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor
04/01/2009EP2043167A1 Nitride semiconductor light emitting device and process for producing the same
04/01/2009EP2043166A1 Method of manufacturing light emitting diode package
04/01/2009EP2043165A1 Illuminating device
04/01/2009EP2043155A2 AC light emitting diode
04/01/2009EP2043075A2 Illuminated signage employing light emitting diodes
04/01/2009EP2042528A1 Curable resin composition
04/01/2009EP2042123A2 Curing light instrument
04/01/2009EP2041806A2 Substantially transparent material for use with light-emitting device
04/01/2009EP2041805A1 Lighting device package
04/01/2009EP2041804A1 Lighting device package
04/01/2009EP2041803A1 Light-emitting crystal structures
04/01/2009EP2041802A1 Light emitting diode having vertical topology and method of making the same
04/01/2009EP2041794A2 Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth
04/01/2009EP2041790A2 Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
04/01/2009EP1550188B1 Sensor
04/01/2009CN201215811Y Light emitting diode