Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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04/29/2009 | CN201228928Y LED module packaged by plastic sucking and thermal sealing |
04/29/2009 | CN101421859A GaN-based semiconductor light-emitting device and method for the fabrication thereof |
04/29/2009 | CN101421858A Group iii nitride semiconductor light emitting device and process for producing the same |
04/29/2009 | CN101421857A Display unit, light emitting device, and solid-state light emitting element substrate |
04/29/2009 | CN101421856A Semiconductor light emitting element, its manufacturing method, and lamp |
04/29/2009 | CN101421855A Light emitting sign and display surface therefor |
04/29/2009 | CN101421854A Process for manufacturing semiconductor light emitting element, semiconductor light emitting element, and lamp equipped with it |
04/29/2009 | CN101421844A Light emitting diode module |
04/29/2009 | CN101421652A Optical transmission module |
04/29/2009 | CN101421651A Optical module, its manufacturing method, optical transmission module, and electronic equipment |
04/29/2009 | CN101421443A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device |
04/29/2009 | CN101421056A System, method and apparatus for self-cleaning dry etch |
04/29/2009 | CN101420075A Flat multi-conductor cable connector |
04/29/2009 | CN101420009A Production process for golden electrode for LED |
04/29/2009 | CN101420008A LED secondary optical lens device |
04/29/2009 | CN101420007A Encapsulation construction and method for LED wafer |
04/29/2009 | CN101420006A Surface-mountable, radiation-emitting component and method for the production thereof |
04/29/2009 | CN101420005A Light emitting device and illuminator using the same |
04/29/2009 | CN101420004A Light emitting device and illuminator using the same |
04/29/2009 | CN101420003A Construction for LED and manufacturing method thereof |
04/29/2009 | CN101420002A LED encapsulation construction and manufacturing method thereof |
04/29/2009 | CN101420001A Method for self-bonding epitaxy |
04/29/2009 | CN101420000A Semiconductor light emitting component and method for fabricating the same |
04/29/2009 | CN101419999A Method for enhancing quantum efficiency of LED |
04/29/2009 | CN101419962A LED, production method therefore and illuminator manufactured by the LED |
04/29/2009 | CN101418943A Linear light source device, surface light-emitting device, surface light source device, and liquid-crystal display device |
04/29/2009 | CN101418938A Light source mould |
04/29/2009 | CN101418927A Light source assembly |
04/29/2009 | CN101418469A Group iii nitride semiconductor manufacturing system |
04/29/2009 | CN101418219A Light emitting diode and fluorescent powder for shortwave semiconductor |
04/29/2009 | CN100484346C Illumination apparatus and image display apparatus |
04/29/2009 | CN100483873C Light-emitting device |
04/29/2009 | CN100483783C Light emitting element and manufacturing method thereof |
04/29/2009 | CN100483771C Method for fabricating organic light emitting diodes and organic light emitting diode |
04/29/2009 | CN100483762C LED device making method |
04/29/2009 | CN100483761C Semiconductor EL part building in metal layer in the adulteration layer based on set image |
04/29/2009 | CN100483760C Method of packaging white LED |
04/29/2009 | CN100483759C LED of brightening pink light |
04/29/2009 | CN100483758C Gallium nitride based light emitting diode and method of manufacturing the same |
04/29/2009 | CN100483757C LED with improved light emittance profile |
04/29/2009 | CN100483756C Light emitting device and lighting fixture |
04/29/2009 | CN100483755C High power LED flip-chip and its manufacturing method |
04/29/2009 | CN100483754C Crystal coating light-emitting diode and producing method thereof |
04/29/2009 | CN100483752C Gallium nitride series LED of high luminous effect and manufacturing method thereof |
04/29/2009 | CN100483738C Self-supporting SiC based GaN apparatus and its manufacturing method |
04/29/2009 | CN100483712C Light emitting diode assembly |
04/29/2009 | CN100483631C Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
04/29/2009 | CN100483627C Gan substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
04/29/2009 | CN100483613C Quantum point making method |
04/29/2009 | CN100483612C Method of fabricating vertical structure compound semiconductor devices |
04/29/2009 | CN100483214C Assembled uniform area light source |
04/29/2009 | CN100483011C Flexiblel ight-emitting unit and its making process |
04/29/2009 | CN100482763C Method for preparing white light LED phosphor powder and flux therefor |
04/28/2009 | US7525191 Semiconductor light source device |
04/28/2009 | US7525128 Zinc-oxide-based double-heterostructure light-emitting diode |
04/28/2009 | US7525127 Semiconductor light emitting device |
04/28/2009 | US7525126 LED package with converging optical element |
04/28/2009 | US7525124 Submount for light emitting diode and its manufacturing method |
04/28/2009 | US7524746 High-refractive index materials comprising semiconductor nanocrystal compositions, methods of making same, and applications therefor |
04/28/2009 | US7524741 Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device |
04/28/2009 | US7524737 Method of fabricating a semiconductor chip with a nitride compound semiconductor material |
04/28/2009 | US7524708 Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrate |
04/28/2009 | US7524692 Method of producing nitride layer and method of fabricating vertical structure nitride semiconductor light emitting device |
04/28/2009 | US7524691 Method of manufacturing group III nitride substrate |
04/28/2009 | US7524687 Method for producing a radiation-emitting-and-receiving semiconductor chip |
04/28/2009 | US7524686 Method of making light emitting diodes (LEDs) with improved light extraction by roughening |
04/28/2009 | US7524391 Optical device and method for manufacturing the same, and electronic apparatus |
04/28/2009 | US7524097 Light emitting assembly |
04/23/2009 | WO2009052486A1 Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof |
04/23/2009 | WO2009052329A1 Light emitting device with phosphor wavelength conversion |
04/23/2009 | WO2009051664A2 Light emitting and lasing semiconductor devices and methods |
04/23/2009 | WO2009051650A1 Gallium nitride semiconductor device on soi and process for making same |
04/23/2009 | WO2009051376A2 Light emitting device and method for fabricating the same |
04/23/2009 | WO2009051178A1 Led package substrate and led package using the same |
04/23/2009 | WO2009051093A1 Semiconductor light emitting module |
04/23/2009 | WO2009050955A1 Iii nitride semiconductor light emitting element |
04/23/2009 | WO2009050857A1 Concave portion forming method, concave-convex product manufacturing method, light-emitting element manufacturing method, and optical element manufacturing method |
04/23/2009 | WO2009050845A1 Door mirror |
04/23/2009 | WO2009049526A1 White light emitting diode |
04/23/2009 | WO2009049465A1 Secondary optic lens |
04/23/2009 | WO2009049453A1 A power led encapsulation structure |
04/23/2009 | WO2009028861A3 Light emitting device package |
04/23/2009 | WO2009028818A3 Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
04/23/2009 | WO2009028812A3 Light emitting device |
04/23/2009 | WO2009028807A3 Light emitting device package and method for fabricating the same |
04/23/2009 | WO2009025462A3 Light emitting device |
04/23/2009 | WO2009015798A3 Mounting structure for leds, led assembly, led assembly socket, method for forming a mounting structure |
04/23/2009 | WO2009015645A3 Optoelectronic component having a layer stack |
04/23/2009 | WO2009002919A3 Chromium/titanium/aluminum-based semiconductor device contact |
04/23/2009 | WO2007130114A3 Two-phase silicate-based yellow phosphor |
04/23/2009 | WO2007041563A3 Cerium based phosphor materials for solid-state lighting applications |
04/23/2009 | WO2007025134A3 Thermally conductive thermoplastics for die-level packaging of microelectronics |
04/23/2009 | WO2007015844A3 Light emitting diodes with improved light extraction and reflectivity |
04/23/2009 | WO2006130359A3 Light emitting nanowires for macroelectronics |
04/23/2009 | WO2006116030A3 Bonded intermediate substrate and method of making same |
04/23/2009 | WO2006105472A3 Power and communication interface for sensors using a single tethered fiber |
04/23/2009 | WO2006078530A3 Packaging designs for leds |
04/23/2009 | US20090105065 Light emitting device with a ceramic garnet material |
04/23/2009 | US20090104758 Gallium nitride materials and methods |
04/23/2009 | US20090104728 Gallium Nitride-Based Compound Semiconductor Multilayer Structure and Production Method Thereof |