| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 12/29/2010 | CN201688254U Light emitting diode light source module |
| 12/29/2010 | CN201688159U LED fluorescent lamp |
| 12/29/2010 | CN1687302B Anthracene compound containing silicon in organic electroluminescent device |
| 12/29/2010 | CN1643444B Electrochromic rearview mirror assembly incorporating a display/signal light |
| 12/29/2010 | CN101933171A Optical-electronic component and method for production thereof |
| 12/29/2010 | CN101933170A Method for the production of a semiconductor structure |
| 12/29/2010 | CN101933169A Semiconductor light emitting device comprising heterojunction |
| 12/29/2010 | CN101933168A Plasmon enhanced light-emitting diodes |
| 12/29/2010 | CN101933167A Iii-nitride semiconductor light emitting device |
| 12/29/2010 | CN101933166A Wire bond free wafer level led |
| 12/29/2010 | CN101933144A A light emitting device |
| 12/29/2010 | CN101932969A Display device |
| 12/29/2010 | CN101932870A Semiconductor package with incorporated light or temperature sensors and time multiplexing |
| 12/29/2010 | CN101931042A Routing method and packaging structure of LED electrode lead as well as display and light-emitting device |
| 12/29/2010 | CN101931041A Silica-based packaging light-emitting diode |
| 12/29/2010 | CN101931040A Packaging of LED area light source |
| 12/29/2010 | CN101931039A Gallium nitride based light emitting diode with double-layer staggered perforated holes and manufacturing process thereof |
| 12/29/2010 | CN101931038A Light-emitting element and method of making the same |
| 12/29/2010 | CN101931037A GaN based LED epitaxial wafer, chip and device |
| 12/29/2010 | CN101931036A Gallium nitride luminous diode |
| 12/29/2010 | CN101931035A Separation method of nitride semiconductor layer, semiconductor device, semiconductor wafer, and manufacturing method thereof |
| 12/29/2010 | CN101931034A Photoelectric element |
| 12/29/2010 | CN101931033A White light diode and manufacturing method thereof |
| 12/29/2010 | CN101930987A Luminous element and manufacturing method thereof |
| 12/29/2010 | CN101930972A Light-emitting diode apparatus |
| 12/29/2010 | CN101930964A Mounting substrate, and method for manufacturing thin light-emitting device using same |
| 12/29/2010 | CN101930942A Cutting method of semiconductor wafer |
| 12/29/2010 | CN101930937A Packaging method of photoelectric component and packaging carrier structure thereof |
| 12/29/2010 | CN101930934A Method for manufacturing light emitting apparatus, light emitting apparatus, and mounting base thereof |
| 12/29/2010 | CN101930932A LED light-emitting module processing method |
| 12/29/2010 | CN101929659A Manufacture method of LED bulb |
| 12/29/2010 | CN101929620A Method and device for obtaining line light source |
| 12/29/2010 | CN101929614A Light-emitting device and packaging method thereof |
| 12/29/2010 | CN101929612A Led light source |
| 12/29/2010 | CN101929610A Large-power forward LED chip structure |
| 12/29/2010 | CN101928990A Epitaxial growth method of GeSn alloy |
| 12/29/2010 | CN101928111A Luminescent glass, making method and application thereof |
| 12/29/2010 | CN101604717B Vertical GaN-based LED chip and manufacture method thereof |
| 12/29/2010 | CN101582477B Method for actively encapsulating LED chip |
| 12/29/2010 | CN101567412B Encapsulating method of blue-light LED chip |
| 12/29/2010 | CN101540359B Epitaxial wafer of AlGaInP light emitting diode with sapphire underlay and preparation method thereof |
| 12/29/2010 | CN101494272B Preparation method for coarsing P-GaN layer surface of LED |
| 12/29/2010 | CN101494268B Preparation method for vertical LED with current countercheck structure |
| 12/29/2010 | CN101420007B Encapsulation construction and method for LED wafer |
| 12/29/2010 | CN101410996B Method for manufacturing light emitting element, compound semiconductor wafer, and light emitting element |
| 12/29/2010 | CN101355117B Led |
| 12/29/2010 | CN101297410B III-nitride light-emitting device with double heterostructure light-emitting region |
| 12/29/2010 | CN101271916B Electrostatic-resistant gallium nitride illumination device and production method thereof |
| 12/29/2010 | CN101267012B Press welding method for semiconductor extension film |
| 12/29/2010 | CN101128506B Multi-functional copolymers comprising rare earth metal complexes and devices thereof |
| 12/29/2010 | CN101060102B Nitride semiconductor substrate, method of making the same and epitaxial substrate for nitride semiconductor light emitting device |
| 12/29/2010 | CN101057341B Infrared-transmitting cover |
| 12/28/2010 | USRE42008 Nitride semiconductor device |
| 12/28/2010 | USRE42007 Vertical geometry InGaN LED |
| 12/28/2010 | US7859810 Photocoupler |
| 12/28/2010 | US7859193 Illumination apparatus |
| 12/28/2010 | US7859185 Light-emitting device |
| 12/28/2010 | US7859182 EueMmAaGgQqNnXx, where M is at least one of Be, Mg, Ca, Sr, Ba, Cd, Sn, Pb or Zn; A is at least one of B, Al, Ga, In, Bi, Sc, Y, La or a rare earth element other than Eu; G is at least one of Si or Ge; Q is at least one of O, S, and Se; X is at least one of F, Cl, Br phosphor coupled to light source |
| 12/28/2010 | US7859109 Gallium nitride-based III-V group compound semiconductor device and method of manufacturing the same |
| 12/28/2010 | US7859086 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same |
| 12/28/2010 | US7859055 Thin film transistor |
| 12/28/2010 | US7859008 Crystalline composition, wafer, device, and associated method |
| 12/28/2010 | US7859007 Light-emitting device and manufacturing method thereof |
| 12/28/2010 | US7859006 Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member |
| 12/28/2010 | US7859005 Method for the production of a semiconductor component comprising a planar contact, and semiconductor component |
| 12/28/2010 | US7859004 Semiconductor device |
| 12/28/2010 | US7859003 Semiconductor light emitting device |
| 12/28/2010 | US7859002 Light-emitting device |
| 12/28/2010 | US7859001 Semiconductor light emitting apparatus |
| 12/28/2010 | US7859000 LEDs using single crystalline phosphor and methods of fabricating same |
| 12/28/2010 | US7858999 Light-emitting chip device with high thermal conductivity |
| 12/28/2010 | US7858998 Semiconductor light emitting devices including flexible silicone film having a lens therein |
| 12/28/2010 | US7858997 Light emitting apparatus and light emitting method |
| 12/28/2010 | US7858996 Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices |
| 12/28/2010 | US7858995 Semiconductor light emitting device |
| 12/28/2010 | US7858994 Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements |
| 12/28/2010 | US7858993 Light emitting device package and light unit having the same |
| 12/28/2010 | US7858991 Light emitting device with magnetic field |
| 12/28/2010 | US7858986 Thin film transistor array panel and method for manufacturing the same |
| 12/28/2010 | US7858963 Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device |
| 12/28/2010 | US7858962 AlInGaN light-emitting device |
| 12/28/2010 | US7858521 Fabrication for electroplating thick metal pads |
| 12/28/2010 | US7858436 Semiconductor device, its manufacture method and template substrate |
| 12/28/2010 | US7858419 Gallium nitride-based compound semiconductor multilayer structure and production method thereof |
| 12/28/2010 | US7858418 Light emitting device and method of manufacturing the same |
| 12/28/2010 | US7858416 LED package structure and method of packaging the same |
| 12/28/2010 | US7858414 Nitride semiconductor device and manufacturing method thereof |
| 12/28/2010 | US7858411 Method for fabricating light emitting device and method for fabricating liquid crystal display device |
| 12/28/2010 | US7858408 LED with phosphor tile and overmolded phosphor in lens |
| 12/28/2010 | US7858403 Methods and systems for fabricating broad spectrum light emitting devices |
| 12/28/2010 | US7858198 Phosphor-containing adhesive silicone composition, composition sheet formed of the composition, and method of producing light emitting device using the sheet |
| 12/28/2010 | US7857994 Green emitting phosphors and blends thereof |
| 12/28/2010 | US7857992 White light-emitting lamp, backlight using same, display and illuminating device |
| 12/23/2010 | WO2010147925A2 Phosphor converting ir leds |
| 12/23/2010 | WO2010147414A2 Light extraction member and organic light emitting diode including the same |
| 12/23/2010 | WO2010147336A2 Chip on board module |
| 12/23/2010 | WO2010147304A2 Semiconductor chip with controlled emission angle |
| 12/23/2010 | WO2010147299A1 Light emitting diode unit |
| 12/23/2010 | WO2010147290A1 Light emitting diode package, and backlight unit and display device using the same |
| 12/23/2010 | WO2010147271A1 Led array module and fabrication method thereof |