| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 08/30/1994 | US5343065 Method of controlling surge protection device hold current |
| 08/30/1994 | US5343064 Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
| 08/30/1994 | US5343063 Dense vertical programmable read only memory cell structure and processes for making them |
| 08/30/1994 | US5343062 Semiconductor memory having a memory cell including a capacitor with a two-layer lower electrode |
| 08/30/1994 | US5343061 Solid-state imaging device suppressing dark-current noise |
| 08/30/1994 | US5343060 Apparatus for reducing mirror in a solid state imaging device wherein a light intercepting layer shields a transfer means from instant light and has an edge which slopes toward the light sensing region |
| 08/30/1994 | US5343059 Method and apparatus for reducing blooming in output of a CCD image sensor |
| 08/30/1994 | US5343058 Gate array bases with flexible routing |
| 08/30/1994 | US5343053 SCR electrostatic discharge protection for integrated circuits |
| 08/30/1994 | US5342958 Insecticides |
| 08/30/1994 | US5342803 Implanting ions of impurity to prevent inversion of the conductive type of the substrate just under field insulator film to form channel stop region |
| 08/30/1994 | US5342802 Method of manufacturing a complementary MIS transistor |
| 08/30/1994 | US5342801 Controllable isotropic plasma etching technique for the suppression of stringers in memory cells |
| 08/30/1994 | US5342800 Method of making memory cell capacitor |
| 08/30/1994 | US5342799 Substrate slew circuit process |
| 08/30/1994 | US5342798 Doping integrated circuit to form source and drain region, heating to form oxide layer, depositing metal layer over oxide, annealing to form metal-silicide. stripping unreacted metal |
| 08/30/1994 | US5342794 Method for forming laterally graded deposit-type emitter for bipolar transistor |
| 08/30/1994 | US5342480 Isolating active regions that are buried in grooves formed in non-active regions |
| 08/30/1994 | US5342451 Converts optical power into electrical power |
| 08/25/1994 | DE4405815A1 Semiconductor device having an anode layer which has low-concentration regions formed by selective diffusion |
| 08/25/1994 | DE4405482A1 Semiconductor component |
| 08/25/1994 | DE4405250A1 Halbleiter-Bauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation |
| 08/25/1994 | DE4314913C1 Method for producing a semiconductor component having a contact structure for vertical contact-making with other semiconductor components |
| 08/25/1994 | DE4314907C1 Method for producing semiconductor components making electrically conducting contact with one another vertically |
| 08/25/1994 | DE4305038A1 MOSFET with temperature protection |
| 08/24/1994 | EP0612151A2 Semiconductor device capable of reducing a clock skew in a plurality of wiring pattern blocks |
| 08/24/1994 | EP0612110A1 High voltage MOS transistor with extended drain |
| 08/24/1994 | EP0612108A1 Double polysilicon EEPROM cell and corresponding manufacturing process |
| 08/24/1994 | EP0612107A1 Double polysilicon EEPROM cell and corresponding programming method |
| 08/24/1994 | EP0612106A1 Electronic device with reduced alpha particles soft error rate |
| 08/24/1994 | EP0612103A2 Method of manufacturing a silicon-on-insulator semiconductor device |
| 08/24/1994 | EP0521002B1 Short-circuit resistant transistor final stage, in particular ignition final stage for motor vehicles |
| 08/24/1994 | EP0374232B1 Method of fabricating an infrared photodetector |
| 08/23/1994 | US5341444 Polarization compensated integrated optical filters and multiplexers |
| 08/23/1994 | US5341342 Flash memory cell structure |
| 08/23/1994 | US5341341 Dynamic random access memory device having addressing section and/or data transferring path arranged in pipeline architecture |
| 08/23/1994 | US5341339 Method for wear leveling in a flash EEPROM memory |
| 08/23/1994 | US5341337 Semiconductor read only memory with paralleled selecting transistors for higher speed |
| 08/23/1994 | US5341328 Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life |
| 08/23/1994 | US5341327 Static random access type semiconductor memory device |
| 08/23/1994 | US5341326 Semiconductor memory having memory cell units each including cascade-connected MOS transistors |
| 08/23/1994 | US5341324 Semiconductor device and manufacturing method thereof |
| 08/23/1994 | US5341114 Integrated limiter and amplifying devices |
| 08/23/1994 | US5341049 Integrated circuit having alternate rows of logic cells and I/O cells |
| 08/23/1994 | US5341041 Basic cell for BiCMOS gate array |
| 08/23/1994 | US5341039 High frequency integrated circuit device including a circuit for decreasing reflected signals in wiring formed on a semiconductor substrate |
| 08/23/1994 | US5341030 Methods for protecting outputs of low-voltage circuits from high programming voltages |
| 08/23/1994 | US5341028 Semiconductor device and a method of manufacturing thereof |
| 08/23/1994 | US5341024 Method of increasing the layout efficiency of dies on a wafer, and increasing the ratio of I/O area to active area per die |
| 08/23/1994 | US5341023 Novel vertical-gate CMOS compatible lateral bipolar transistor |
| 08/23/1994 | US5341021 Bipolar transistor having an electrode structure suitable for integration |
| 08/23/1994 | US5341018 Semiconductor integrated circuit device having a plurality of input circuits each including differently sized transistors |
| 08/23/1994 | US5341014 Semiconductor device and a method of fabricating the same |
| 08/23/1994 | US5341013 Semiconductor device provided with sense circuits |
| 08/23/1994 | US5341012 CMOS device for use in connection with an active matrix panel |
| 08/23/1994 | US5341010 Semiconductor device including nonvolatile memories |
| 08/23/1994 | US5341009 Fast charging MOS capacitor structure for high magnitude voltage of either positive or negative polarity |
| 08/23/1994 | US5341008 Bulk charge modulated device photocell with lateral charge drain |
| 08/23/1994 | US5341007 Semiconductor device and a method for fabricating the same |
| 08/23/1994 | US5341005 Structure for protecting an integrated circuit from electrostatic discharges |
| 08/23/1994 | US5341004 Semiconductor switching device with reduced switching loss |
| 08/23/1994 | US5341003 MOS semiconductor device having a main unit element and a sense unit element for monitoring the current in the main unit element |
| 08/23/1994 | US5341000 Thin silicon carbide layer on an insulating layer |
| 08/23/1994 | US5340998 Semiconductor surface light emitting and receiving heterojunction device |
| 08/23/1994 | US5340978 Image-sensing display panels with LCD display panel and photosensitive element array |
| 08/23/1994 | US5340977 Solid-state image pickup device |
| 08/23/1994 | US5340775 Depositing silicon chromium film on substrate, masking, etching, cleaning, depositing tungsten layer, then aluminum alloy, etching, annealing, depositing silicon dioxide passivation layer |
| 08/23/1994 | US5340774 Semiconductor fabrication technique using local planarization with self-aligned transistors |
| 08/23/1994 | US5340772 Method of increasing the layout efficiency of dies on a wafer and increasing the ratio of I/O area to active area per die |
| 08/23/1994 | US5340770 Method of making a shallow junction by using first and second SOG layers |
| 08/23/1994 | US5340769 Method for manufacturing semiconductor device having groove-structured isolation |
| 08/23/1994 | US5340768 Method of fabricating self-aligned field-plate isolation between control electrodes |
| 08/23/1994 | US5340766 Method for fabricating charge-coupled device |
| 08/23/1994 | US5340765 Forming planarized layer, forming opening, forming silicon layers in opening, forming oxide layers, partially removing insulating layer and exposing outer surface of container, annealing |
| 08/23/1994 | US5340764 Integration of high performance submicron CMOS and dual-poly non-volatile memory devices using a third polysilicon layer |
| 08/23/1994 | US5340763 Multi-pin stacked capacitor utilizing micro villus patterning in a container cell and method to fabricate same |
| 08/23/1994 | US5340762 Forming islands of silicon, forming insulating layer over gate electrode portion, forming electrodes, doping, masking, heating to form emitter and drain contact regions |
| 08/23/1994 | US5340760 Method of manufacturing EEPROM memory device |
| 08/23/1994 | US5340759 Forming source and drain layers, etching, forming gate dielectric layer, forming conductive gate in contact with gate dielectric layer |
| 08/23/1994 | US5340756 Method for producing self-aligned LDD CMOS, DMOS with deeper source/drain and P-base regions and, bipolar devices on a common substrate |
| 08/23/1994 | US5340754 Method for forming a transistor having a dynamic connection between a substrate and a channel region |
| 08/23/1994 | US5340435 Bonded wafer and method of manufacturing it |
| 08/23/1994 | CA2015462C Light emitting diode array |
| 08/23/1994 | CA2015358C Light emitting diode array |
| 08/20/1994 | CA2115944A1 Semiconductor device and a manufacturing method therefor |
| 08/18/1994 | WO1994018736A1 Overcurrent protective circuit and semiconductor device |
| 08/18/1994 | WO1994018706A1 Active matrix substrate and thin film transistor, and method of its manufacture |
| 08/18/1994 | WO1994018704A1 Optical character generator for an electrographic printer |
| 08/18/1994 | WO1994018703A1 Ultra-high-density alternate metal virtual ground rom |
| 08/18/1994 | WO1994018702A1 A thin film semiconductor device and method |
| 08/18/1994 | WO1994018677A1 Improvements in a very large scale integrated planar read only memory |
| 08/18/1994 | DE4404129A1 Conducting structure prodn. on topography of substrate |
| 08/18/1994 | DE4341698A1 Semiconductor component and method for its production |
| 08/17/1994 | EP0610969A2 Active matrix panel |
| 08/17/1994 | EP0610949A2 Static semiconductor memory device having increased soft error immunity |
| 08/17/1994 | EP0610927A2 SRAM memory structure and manufacturing method thereof |
| 08/17/1994 | EP0610922A2 Semiconductor memory device |
| 08/17/1994 | EP0610771A1 Semiconductor arrangement with CMOS basic cells |
| 08/17/1994 | EP0610709A1 Process of manufacturing tri-dimensional circuit devices |
| 08/17/1994 | EP0610643A1 EEPROM cell and peripheral MOS transistor |