Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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11/15/1994 | US5365098 Non-volatile semiconductor memory having improved erasure characteristics |
11/15/1994 | US5365097 Vertical epitaxial SOI transistor, memory cell and fabrication methods |
11/15/1994 | US5365096 Yttrium lower electrode, yttrium oxide dielectric film, upper electrode |
11/15/1994 | US5365095 Semiconductor memory device and process |
11/15/1994 | US5365094 Semiconductor device including ferroelectric nonvolatile memory |
11/15/1994 | US5365093 Solid-state imaging device with tapered channel regions |
11/15/1994 | US5365092 Frontside illuminated charge-coupled device with high sensitivity to the blue, ultraviolet and soft X-ray spectral range |
11/15/1994 | US5365091 Semiconductor integrated circuit device |
11/15/1994 | US5365088 Thermal/mechanical buffer for HgCdTe/Si direct hybridization |
11/15/1994 | US5365087 Photodetector and opto-electronic integrated circuit with guard ring |
11/15/1994 | US5365086 Thyristors having a common cathode |
11/15/1994 | US5365085 Power semiconductor device with a current detecting function |
11/15/1994 | US5365082 MOSFET cell array |
11/15/1994 | US5365081 Semiconductor device incorporating thermally contracted film |
11/15/1994 | US5365080 Field effect transistor with crystallized channel region |
11/15/1994 | US5365056 X-ray image intensifier having an image sensor with amorphous semiconductor material layer |
11/15/1994 | US5365031 Apparatus and method for shielding a workpiece holding mechanism from depreciative effects during workpiece processing |
11/15/1994 | US5364814 Reduced leakage storage mode |
11/15/1994 | US5364813 Forming insulating layer, forming sacrificial layer and patterning, depositing conducting layer, forming second and third insulating and second conducting layers, masking, oxidizing, forming apertures and contactors |
11/15/1994 | US5364812 High density dynamic RAM cell |
11/15/1994 | US5364811 Method of manufacturing a semiconductor memory device with multiple device forming regions |
11/15/1994 | US5364810 Methods of forming a vertical field-effect transistor and a semiconductor memory cell |
11/15/1994 | US5364809 Containing a transistor and capacitor |
11/15/1994 | US5364808 Method of making a buried bit line DRAM cell |
11/15/1994 | US5364805 Method of manufacturing an EEPROM having an erasing gate electrode |
11/15/1994 | US5364801 Method of forming a charge pump circuit |
11/15/1994 | US5364800 Varying the thickness of the surface silicon layer in a silicon-on-insulator substrate |
11/10/1994 | WO1994025990A1 Thin film transistor and display using the transistor |
11/10/1994 | WO1994025988A1 Epitaxial semiconductor wafer for cmos integrated circuits |
11/10/1994 | WO1994025986A1 Semiconductor components with supply terminals for high integration density |
11/10/1994 | WO1994025982A1 Contact structure for vertical chip connections |
11/10/1994 | WO1994025981A1 Process for producing vertically connected semiconductor components |
11/10/1994 | WO1994021102A3 Direct multilevel thin-film transistor production method |
11/10/1994 | DE4302223C2 Nicht-flüchtige Halbleiterspeichereinrichtung sowie Herstellungsverfahren dafür The non-volatile semiconductor memory device and manufacturing method thereof |
11/09/1994 | EP0623999A2 Field programmable gate array |
11/09/1994 | EP0623964A2 Semiconductor devices using traps |
11/09/1994 | EP0623963A1 MOSFET on SOI substrate |
11/09/1994 | EP0623959A2 EEPROM cell |
11/09/1994 | EP0623958A1 Semi-conductor integrated circuit including protection means |
11/09/1994 | EP0623951A1 A semiconductor device in a thin active layer with high breakdown voltage |
11/09/1994 | EP0623949A1 A dielectrically isolated semiconductor device and a method for its manufacture |
11/09/1994 | EP0623932A2 Soft error immune CMOS static RAM cell |
11/09/1994 | EP0623246A1 PHOTOVOLTAIC CELL WITH THIN CdS LAYER |
11/09/1994 | EP0623245A1 Quantum well infrared detector |
11/09/1994 | EP0623244A1 Quantum well p-channel field effect transistor, and integrated circuit having complementary transistors |
11/09/1994 | EP0623243A1 Integration of transistors with vertical cavity surface emitting lasers |
11/09/1994 | EP0598895A4 Symmetrical multi-layer metal logic array with continuous substrate taps. |
11/09/1994 | EP0398906B1 Zener power diode |
11/09/1994 | CN1094851A Transistor, semiconductor circuit, and method of forming the same |
11/09/1994 | CN1094840A Dynamic ram |
11/08/1994 | US5363339 Semiconductor memory device |
11/08/1994 | US5363336 Semiconductor memory device controlling the supply voltage on BIT lines |
11/08/1994 | US5363328 Highly stable asymmetric SRAM cell |
11/08/1994 | US5363327 Buried-sidewall-strap two transistor one capacitor trench cell |
11/08/1994 | US5363326 Semiconductor memory device having crossed word lines, and method of operating same |
11/08/1994 | US5363325 Dynamic semiconductor memory device having high integration density |
11/08/1994 | US5363324 Full CMOS type SRAM and method of manufacturing same |
11/08/1994 | US5363216 Contact image sensor module |
11/08/1994 | US5363058 Amplifier having linear input-output characteristics and high efficiency |
11/08/1994 | US5363000 Solid-state image sensing apparatus |
11/08/1994 | US5362998 Composite circuit of bipolar transistors and MOS transistors and semiconductor integrated circuit device using the same |
11/08/1994 | US5362986 Vertical chip mount memory package with packaging substrate and memory chip pairs |
11/08/1994 | US5362981 Integrated semiconductor device having a buried semiconductor layer and fabrication method thereof |
11/08/1994 | US5362980 Semiconductor component with protective element for limiting current through component |
11/08/1994 | US5362978 Method for establishing an electrical field at a surface of a semiconductor device |
11/08/1994 | US5362960 Photoelectric transducing device having a self-exciting oscillating mechanism |
11/08/1994 | US5362927 Thick film hybrid circuit board device |
11/08/1994 | US5362673 Method of manufacturing a semiconductor light emitting device |
11/08/1994 | US5362671 Method of fabricating single crystal silicon arrayed devices for display panels |
11/08/1994 | US5362670 Semiconductor device producing method requiring only two masks for completion of element isolation regions and P- and N-wells |
11/08/1994 | US5362666 Method of producing a self-aligned contact penetrating cell plate |
11/08/1994 | US5362664 Method for fabricating a semiconductor memory device |
11/08/1994 | US5362663 Method of forming double well substrate plate trench DRAM cell array |
11/08/1994 | US5362662 Doping substrate through masking and buffer layers, then heating for diffusion |
11/08/1994 | US5362657 Lateral complementary heterojunction bipolar transistor and processing procedure |
11/03/1994 | DE2858738C2 Method for producing an integrated circuit for inverting a binary logic signal |
11/02/1994 | EP0622851A1 Image sensor |
11/02/1994 | EP0622850A1 An electrostatic discharge protect diode for silicon-on-insulator technology |
11/02/1994 | EP0622849A1 A monolithic integrated structure of an electronic device having a predetermined unidirectional conduction threshold |
11/02/1994 | EP0622848A1 Chip-type circuit component and method of manufacturing the same |
11/02/1994 | EP0622844A1 Method of forming low resistance contacts at the junction between regions having different conductivity types |
11/02/1994 | EP0622843A2 Reach-through isolation etching method for silicon-on-insulator devices |
11/02/1994 | EP0622842A2 A method of forming a frontside contact to the silicon substrate of a SOI wafer |
11/02/1994 | EP0622835A1 Heterojunction compound semiconductor device and method of manufacturing the same |
11/02/1994 | EP0622834A2 Method to prevent latch-up and improve breakdown voltage in SOI MOSFETS |
11/02/1994 | EP0622807A2 Semiconductor memory device |
11/02/1994 | EP0622806A2 Nonvolatile semiconductor memory device |
11/02/1994 | EP0622717A1 Temperature stable circuit for recycling discharge current during the driving of an inductive load |
11/02/1994 | EP0622654A2 Optoelectronic semiconductor device |
11/01/1994 | US5361273 Semiconductor optical surface transmission device |
11/01/1994 | US5361272 Semiconductor architecture and application thereof |
11/01/1994 | US5361234 Semiconductor memory cell device having dummy capacitors reducing boundary level changes between a memory cell array area and a peripheral circuit area |
11/01/1994 | US5361233 Semiconductor memory apparatus |
11/01/1994 | US5361225 Nonvolatile memory device utilizing field effect transistor having ferroelectric gate film |
11/01/1994 | US5361185 Distributed VCC/VSS ESD clamp structure |
11/01/1994 | US5361008 Switching circuit of low power consumption |
11/01/1994 | US5361006 Electrical circuitry with threshold control |
11/01/1994 | US5361004 TTL-CMOS output stage for an integrated circuit |
11/01/1994 | US5361000 Reference potential generating circuit |
11/01/1994 | US5360989 MIS type capacitor having reduced change in capacitance when biased in forward and reverse directions |