Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
11/2001
11/27/2001US6323509 Power semiconductor device including a free wheeling diode and method of manufacturing for same
11/27/2001US6323508 Insulated gate semiconductor device and manufacturing method thereof
11/27/2001US6323490 X-ray semiconductor detector
11/27/2001US6323476 Active pixel sensor with switched supply row select
11/27/2001US6323475 Hybrid semiconductor imaging device having plural readout substrates
11/27/2001US6323132 Etching methods for anisotropic platinum profile
11/27/2001US6323115 Method of forming semiconductor integrated circuit device with dual gate CMOS structure
11/27/2001US6323113 Intelligent gate-level fill methods for reducing global pattern density effects
11/27/2001US6323110 Structure and fabrication process of silicon on insulator wafer
11/27/2001US6323109 Laminated SOI substrate and producing method thereof
11/27/2001US6323107 Process for forming device isolation region
11/27/2001US6323103 Method for fabricating transistors
11/27/2001US6323100 Method for manufacturing a semiconductor device
11/27/2001US6323096 Method for fabricating a flexible interconnect film with resistor and capacitor layers
11/27/2001US6323091 Method of forming semiconductor memory device with LDD
11/27/2001US6323089 Semiconductor memory array with buried drain lines and processing methods therefor
11/27/2001US6323086 Flash memory structure using sidewall floating gate having one side thereof surrounded by control gate
11/27/2001US6323085 High coupling split-gate transistor and method for its formation
11/27/2001US6323084 Semiconductor device capacitor and method of manufacturing the same
11/27/2001US6323083 Method for forming lower electrode structure of capacitor of semiconductor device
11/27/2001US6323082 Process for making a DRAM cell with three-sided gate transfer
11/27/2001US6323081 Diffusion barrier layers and methods of forming same
11/27/2001US6323080 Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs, and integrated circuitry
11/27/2001US6323079 Method for manufacturing a semiconductor device
11/27/2001US6323076 Integrated circuit having temporary conductive path structure and method for forming the same
11/27/2001US6323075 Method of fabricating semiconductor device
11/27/2001US6323074 High voltage ESD protection device with very low snapback voltage by adding as a p+ diffusion and n-well to the NMOS drain
11/27/2001US6323072 Method for forming semiconductor thin film
11/27/2001US6323070 Semiconductor device and its manufacturing method
11/27/2001US6323069 Method of manufacturing a thin film transistor using light irradiation to form impurity regions
11/27/2001US6323068 Liquid crystal display device integrated with driving circuit and method for fabricating the same
11/27/2001US6323057 Method of producing a thin-film capacitor
11/27/2001US6323056 Solar cell, method for manufacturing same, and photolithographic mask for use in manufacturing a solar cell
11/27/2001US6323054 Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor
11/27/2001US6323051 Method of manufacturing liquid crystal display
11/27/2001US6323047 Method for monitoring second gate over-etch in a semiconductor device
11/27/2001US6323044 Method of forming capacitor having the lower metal electrode for preventing undesired defects at the surface of the metal plug
11/27/2001US6322934 Designing a reticle including pattern features having a critical dimension to form corresponding circuit features based upon overlap areas defined by a plurality of exposure steps.
11/27/2001US6322910 Organic electroluminescent device
11/27/2001US6322849 Forming an integrated circuit portion including a thin film of ferroelectric metal oxide material and conducting an inert-gas recovery anneal by locating the portion in an unreactive gas atomsphere
11/22/2001WO2001088994A1 Semiconductor device and method of manufacture thereof
11/22/2001WO2001088992A2 Semiconductor power component
11/22/2001WO2001088989A2 Unit cell with fan-out for large focal plane arrays with small detector pitch
11/22/2001WO2001088987A2 Staggered bitline strapping of a non-volatile memory cell
11/22/2001WO2001088986A2 Staggered bitline strapping of a non-volatile memory cell
11/22/2001WO2001088985A2 Uniform bitline strapping of a non-volatile memory cell
11/22/2001WO2001088984A1 Vertical transistor
11/22/2001WO2001088976A2 Wireless radio frequency testing methode of integrated circuits and wafers
11/22/2001WO2001088767A1 Integrated circuit partitioning, placement and routing system
11/22/2001WO2001088569A1 Radiation detector and method of manufacture thereof
11/22/2001WO2001088567A1 Radiation detector and method of producing the same
11/22/2001WO2001027972A3 Molecular scale electronic devices
11/22/2001WO2000038238A9 Reduced diffusion of a mobile ion from a metal oxide ceramic into the substrate
11/22/2001US20010044925 Circuit design method for designing conductive members with a multilayered structure to have antenna sized of proper values
11/22/2001US20010044924 Logic circuit module, method for designing a semiconductor integrated circuit using the same, and semiconductor integrated circuit
11/22/2001US20010044923 Memory embedded semiconductor integrated circuit and a method for designing the same
11/22/2001US20010044918 Semiconductor integrated circuit and design method and manufacturing method of the same
11/22/2001US20010044216 Porous region removing method and semiconductor substrate manufacturing method
11/22/2001US20010044205 Forming a second conductive material in said recess so as to have a top surface which is substatnially planer and coestensive with top surface of dielectric layer
11/22/2001US20010044199 Semiconductor device and manufacture thereof
11/22/2001US20010044192 Method for manufacturing stacked capacitor with stable capacitor lower electrode
11/22/2001US20010044187 Method for forming gate electrode of flash memory
11/22/2001US20010044186 Method for reducing single bit data loss in a memory circuit
11/22/2001US20010044185 Memory device, manufacturing method thereof and integrated circuit thereof
11/22/2001US20010044184 Nonvolatile semiconductor memory device and method of manufacturing the same
11/22/2001US20010044183 Nonvolatile semiconductor device having a memory cells each of which is constituted of a memory transistor and a selection transistor
11/22/2001US20010044181 Semiconductor device and method for fabricating the same
11/22/2001US20010044179 Method for manufacturing a capacitor
11/22/2001US20010044178 Method of forming dielectric film with good crystallinity and low leak
11/22/2001US20010044174 Semiconductor device and method of fabricating the same
11/22/2001US20010044172 Method for fabricating thin film transistor
11/22/2001US20010044166 Method for forming microlenses with high light transmittance in image sensor
11/22/2001US20010044162 Method and apparatus for fabricating electronic device
11/22/2001US20010044160 Method for fabricating a patterned metal-oxide-containing layer
11/22/2001US20010044075 Alkali soluble resin, unsaturated polymerizable compound, radiation sensitive polymerization initiator
11/22/2001US20010043488 Magnetoresistive memory having elevated interference immunity
11/22/2001US20010043487 Semiconductor memory device
11/22/2001US20010043486 Asymmetric ram cell
11/22/2001US20010043483 Layout structure and method of a column path of a semiconductor memory device
11/22/2001US20010043453 Method of forming metal electrodes
11/22/2001US20010043449 ESD protection apparatus and method for fabricating the same
11/22/2001US20010043448 Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus
11/22/2001US20010043276 Imaging device including thinned read out mode and all pixel read out mode
11/22/2001US20010043275 Solid-state imaging device and camera using the same
11/22/2001US20010043274 Optical test structure for measuring charge-transfer efficiency
11/22/2001US20010043204 Display device capable of collecting substantially all power charged to capacitive load in display panel
11/22/2001US20010043184 Active matrix liquid crystal display device
11/22/2001US20010043175 Liquid crystal panel substrate, liquid crystal panel, and electronic equipment and projection type display device both using the same
11/22/2001US20010043168 Display device
11/22/2001US20010043136 Lateral high-Q inductor for semiconductor devices
11/22/2001US20010043114 Voltage boosting circuit including capacitor with reduced parasitic capacitance
11/22/2001US20010043112 Soi voltage-tolerant body-coupled pass transistor
11/22/2001US20010043085 Semiconductor integrated circuit
11/22/2001US20010043046 Luminescent apparatus and method of manufacturing the same
11/22/2001US20010042926 Semiconductor memory device
11/22/2001US20010042920 Semiconductor device
11/22/2001US20010042901 Wafer-level package, a method of manufacturing thereof and a method of manufacturing semiconductor devices from such a wafer-level package
11/22/2001US20010042899 Integrated circuit module having on-chip surge capacitors
11/22/2001US20010042893 Semiconductor memory device having multilevel memory cell and method of manufacturing the same
11/22/2001US20010042888 Transistor comprising semiconductor substrate, channel region between two source/drain regions, metallic intermediate layer on channel region and forming Schottky diode with substrate, ferroelectric layer on metallic layer, gate electrode
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