| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 03/28/2002 | CA2435025A1 Magnetic layer system and a component having such a layer system |
| 03/28/2002 | CA2423028A1 Semiconductor device and method of forming a semiconductor device |
| 03/27/2002 | EP1191823A1 Organic el device and method of manufacture thereof |
| 03/27/2002 | EP1191820A1 Active organic el device and method of manufacture thereof |
| 03/27/2002 | EP1191692A1 Power module |
| 03/27/2002 | EP1191604A2 Semiconductor memory device |
| 03/27/2002 | EP1191598A1 Method for fabricating a pn junction in a semiconductor device |
| 03/27/2002 | EP1191597A2 Sidewall process to improve the flash memory cell performance |
| 03/27/2002 | EP1191596A2 Semiconductor memory device and its manufacturing method |
| 03/27/2002 | EP1191595A2 Integrated memory device with memory cells and buffer capacitors |
| 03/27/2002 | EP1191594A2 Diode device comprising two monolithically integrated diodes |
| 03/27/2002 | EP1191593A2 Organic electroluminescent device with supplement cathode bus conductor |
| 03/27/2002 | EP1191592A2 Cathode contact structures in organic electroluminescent devices |
| 03/27/2002 | EP1191586A2 Floating gate memory and manufacturing method |
| 03/27/2002 | EP1191585A2 Floating gate memory and manufacturing method |
| 03/27/2002 | EP1191584A2 Floating gate memory and manufacturing method |
| 03/27/2002 | EP1191583A2 Low voltage transistor |
| 03/27/2002 | EP1191577A1 MOSFET transistor |
| 03/27/2002 | EP1191557A2 Integrated adjustable capacitor |
| 03/27/2002 | EP1191479A1 Programmable neuron mosfet |
| 03/27/2002 | EP1191457A2 Monolithic systems with dynamically focused input/output |
| 03/27/2002 | EP1191344A2 Magnetoresistive element and magnetoresistive device using the same |
| 03/27/2002 | EP1190487A1 High voltage protection circuit on standard cmos process |
| 03/27/2002 | EP1190453A2 Field-effect semiconductor devices |
| 03/27/2002 | EP1190451A1 Multi-bit trench capacitor |
| 03/27/2002 | EP1190450A2 Electrostatic discharge protection of integrated circuits |
| 03/27/2002 | EP1190442A2 Semiconductor device manufacturing using low energy high tilt angle ion implantation |
| 03/27/2002 | EP1190410A2 Electroluminescent element |
| 03/27/2002 | EP1019931B1 Communication module having selectively programmable exterior surface |
| 03/27/2002 | EP0834198B1 Reflecting semiconductor substrates |
| 03/27/2002 | EP0770265B1 Method of forming doped bst layers and integrated circuit capacitors comprising magnesium doped bst layers |
| 03/27/2002 | EP0769206B1 Thin films of abo3 with excess a-site and b-site modifiers and method of fabricating integrated circuits with same |
| 03/27/2002 | CN1342331A Method for forming co-axial interconnect lines in CMOS process |
| 03/27/2002 | CN1342330A Method for forming co-axial interconnect in CMOS process |
| 03/27/2002 | CN1342329A Method of forming dual gate oxide layers of varying thickness on single substrate |
| 03/27/2002 | CN1342037A Protecting circuit device using metal oxide semiconductor field effect transistor and its manufacturing method |
| 03/27/2002 | CN1342033A Method for manufacturing organic electroluminescence element by using laser transfer |
| 03/27/2002 | CN1341970A 电子装置 Electronic devices |
| 03/27/2002 | CN1341968A 半导体集成电路装置及其制造方法 The semiconductor integrated circuit device and manufacturing method thereof |
| 03/27/2002 | CN1341967A 集成电路装置 The integrated circuit device |
| 03/27/2002 | CN1341961A Method for manufacturing semiconductor integrated circuit device |
| 03/27/2002 | CN1341960A Method for manufacturing conductive connecting wire |
| 03/27/2002 | CN1341915A Active matrix self-luminous display device and active matrix organic EL display device |
| 03/27/2002 | CN1081826C Non-volatile semiconductor store and data programing method |
| 03/27/2002 | CN1081825C 半导体集成电路器件 The semiconductor integrated circuit device |
| 03/26/2002 | US6363500 Device and method for outputting positional information for LSI cells and recording medium for positional information output program for LSI cells |
| 03/26/2002 | US6363135 Sensor with a guard electrode |
| 03/26/2002 | US6363006 Asymmetric RAM cell |
| 03/26/2002 | US6363004 Nonvolatile ferroelectric memory having shunt lines |
| 03/26/2002 | US6363003 Ferroelectric memory device |
| 03/26/2002 | US6363000 Write circuit for large MRAM arrays |
| 03/26/2002 | US6362999 Semiconductor device including a repetitive pattern |
| 03/26/2002 | US6362769 Analogue-to-digital conversion using frequency-modulated input or intermediate values |
| 03/26/2002 | US6362689 MMIC folded power amplifier |
| 03/26/2002 | US6362665 Backwards drivable MOS output driver |
| 03/26/2002 | US6362651 Method for fabricating PLDs including multiple discrete devices formed on a single chip |
| 03/26/2002 | US6362566 Organic electroluminescent apparatus |
| 03/26/2002 | US6362523 Semiconductor device |
| 03/26/2002 | US6362514 Semiconductor device |
| 03/26/2002 | US6362511 MIS-type semiconductor device having a multi-portion gate electrode |
| 03/26/2002 | US6362509 Field effect transistor with organic semiconductor layer |
| 03/26/2002 | US6362508 Triple layer pre-metal dielectric structure for CMOS memory devices |
| 03/26/2002 | US6362507 Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate |
| 03/26/2002 | US6362506 Minimization-feasible word line structure for DRAM cell |
| 03/26/2002 | US6362504 Contoured nonvolatile memory cell |
| 03/26/2002 | US6362503 Low temperature process for fabricating layered superlattice materials and making electronic devices including same |
| 03/26/2002 | US6362502 DRAM cell circuit |
| 03/26/2002 | US6362501 DRAM cell array not requiring a device isolation layer between cells |
| 03/26/2002 | US6362500 Memory structure in ferroelectric nonvolatile memory and readout method therefor |
| 03/26/2002 | US6362499 Ferroelectric transistors using thin film semiconductor gate electrodes |
| 03/26/2002 | US6362498 Color image sensor with embedded microlens array |
| 03/26/2002 | US6362497 Semiconductor integrated circuit having ESD/EOS protection |
| 03/26/2002 | US6362482 High data rate smart sensor technology |
| 03/26/2002 | US6362481 X-ray detector apparatus with reduced thermal expansivity |
| 03/26/2002 | US6362078 Dynamic threshold voltage device and methods for fabricating dynamic threshold voltage devices |
| 03/26/2002 | US6362076 Method of fabricating an SOI wafer by hydrogen ion delamination without independent bonding heat treatment |
| 03/26/2002 | US6362075 Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide |
| 03/26/2002 | US6362073 Method for forming semiconductor device having low parasite capacitance using air gap and self-aligned contact plug |
| 03/26/2002 | US6362072 Process for realizing trench structures |
| 03/26/2002 | US6362070 Process for manufacturing a SOI wafer with buried oxide regions without cusps |
| 03/26/2002 | US6362068 Electrode interface for high-dielectric-constant materials |
| 03/26/2002 | US6362067 Accurate self-aligned resistor structure and method of making the same |
| 03/26/2002 | US6362059 Production of a semiconductor device having a P-well |
| 03/26/2002 | US6362056 Method of making alternative to dual gate oxide for MOSFETs |
| 03/26/2002 | US6362052 Use of an etch to reduce the thickness and around the edges of a resist mask during the creation of a memory cell |
| 03/26/2002 | US6362049 High yield performance semiconductor process flow for NAND flash memory products |
| 03/26/2002 | US6362048 Method of manufacturing floating gate of flash memory |
| 03/26/2002 | US6362047 Method of manufacturing EEPROM memory points |
| 03/26/2002 | US6362044 Removing a spontaneous oxidation film adhering to an amorphous silicon surface of a semiconductor substrate, heating amorphous silicon, spraying silane to form an amorphous silicon/polysicon mixed-phase active layer; annelaing |
| 03/26/2002 | US6362043 Method for coupling to semiconductor device in an integrated circuit having edge-defined, sub-lithographic conductors |
| 03/26/2002 | US6362042 DRAM having a cup-shaped storage node electrode recessed within an insulating layer |
| 03/26/2002 | US6362039 Self-aligned resistor and local interconnect |
| 03/26/2002 | US6362038 Low and high voltage CMOS devices and process for fabricating same |
| 03/26/2002 | US6362037 Semiconductor device and method of fabricating same |
| 03/26/2002 | US6362036 VDMOS transistor protected against over-voltages between source and gate |
| 03/26/2002 | US6362032 Method for manufacturing fringe field switching mode liquid crystal display |
| 03/26/2002 | US6362027 Semiconductor device, active matrix substrate, method of manufacturing the semiconductor device and method of manufacturing the active matrix substrate |
| 03/26/2002 | US6362024 Semiconductor memory device manufacturing method with fuse cutting performance improved |
| 03/26/2002 | US6362021 Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same |
| 03/26/2002 | US6362019 Solid-state imaging device and manufacturing method therefor |