Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
04/2002
04/02/2002US6365453 Method and structure for reducing contact aspect ratios
04/02/2002US6365448 Structure and method for gated lateral bipolar transistors
04/02/2002US6365447 High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth
04/02/2002US6365444 Process for forming polycrystalline thin film transistor liquid crystal display
04/02/2002US6365443 Method of manufacturing a semiconductor device having data pads formed in scribed area
04/02/2002US6365439 Method of manufacturing a ball grid array type semiconductor package
04/02/2002US6365429 Method for nitride based laser diode with growth substrate removed using an intermediate substrate
04/02/2002US6365421 Method and apparatus for storage of test results within an integrated circuit
04/02/2002US6365420 Method of forming dielectric film with good crystallinity and low leak
04/02/2002US6365419 High density MRAM cell array
04/02/2002US6365270 Multicolor; vertical stack
04/02/2002CA2241676C Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same
03/2002
03/28/2002WO2002025810A2 Mmic folded power amplifier
03/28/2002WO2002025749A2 Magnetic layer system and a component comprising such a layer system
03/28/2002WO2002025735A2 Diode with variable width metal stripes for improved protection against electrostatic discharge (esd) current failure
03/28/2002WO2002025734A2 High voltage tolerant electrostatic discharge (esd) bus clamp
03/28/2002WO2002025733A2 Non-volatile memory cell array and methods of forming
03/28/2002WO2002025725A2 Semiconductor device and process for forming the same
03/28/2002WO2002025709A2 Integrated thin film capacitor/inductor/interconnect system and method
03/28/2002WO2002025700A2 Semiconductor device and method of forming a semiconductor device
03/28/2002WO2002025699A2 Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix
03/28/2002WO2002025665A2 Non-volatile passive matrix and method for readout of the same
03/28/2002WO2001091185A3 Ultra-late programming rom and method of manufacture
03/28/2002WO2001084570A3 Magnetic element with insulating veils and fabricating method thereof
03/28/2002WO2001078093A3 Distributed capacitor
03/28/2002WO2001039248A8 Contact for a trench capacitor of a dram cell arrangement
03/28/2002US20020038448 Semiconductor integrated circuit device, and method of placement and routing for such device
03/28/2002US20020038402 Semiconductor memory including ferroelectric gate capacitor structure, and method of fabricating the same
03/28/2002US20020038204 Method of designing clock wiring
03/28/2002US20020037654 Laser annealing glass dielectric
03/28/2002US20020037647 Heating; plasma etching
03/28/2002US20020037644 Method for forming tungsten bit line and devices including the same
03/28/2002US20020037640 Method of fabricating EEPROM having tunnel window area
03/28/2002US20020037639 Method for farbricating field-effect transistors in integrated semiconductor circuits and integrated semiconductor circuit fabricated with a field-effect transistor of this type
03/28/2002US20020037638 Semiconductor device and method for forming the same
03/28/2002US20020037637 Using a carbon film as an etch hardmask for hard-to-etch materials
03/28/2002US20020037630 Surface-area-enhanced ruthenium electrically conductive layer that has improved compatibility with high-dielectric constant dielectric materials; heating ruthenium oxide
03/28/2002US20020037624 Capacitor and method for fabricating semiconductor device
03/28/2002US20020037621 Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same
03/28/2002US20020037620 Semiconductor device and method for fabricating the same
03/28/2002US20020037618 Semiconductor device and method of manufacturing the same
03/28/2002US20020037615 With a gate insulation film of hafnium oxide formed as a high dielectric constant insulator over the entire structure
03/28/2002US20020037611 Contact hole for exposing an active region of a substrate is self-aligned and ions are locally implanted only on a channel region
03/28/2002US20020037607 Body-to-substrate contact structure for SOI device and method for fabricating same
03/28/2002US20020037595 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same
03/28/2002US20020037434 Integrated circuit having a micromagnetic device and method of manufacture therefor
03/28/2002US20020036943 Semiconductor memory device
03/28/2002US20020036942 Semiconductor integrated circuit device having a hierarchical power source configuration
03/28/2002US20020036940 Semiconductor memory device
03/28/2002US20020036934 Ferroelectric memory device, method of manufacuring the same, and embedded device
03/28/2002US20020036931 Electrically programmable memory element with reduced area of contact and method for making same
03/28/2002US20020036927 Semiconductor memory with nonvolatile memory cell array and semiconductor device with nonvolatile memory cell array and logic device
03/28/2002US20020036924 Semiconductor device
03/28/2002US20020036919 Circuit selection of magnetic memory cells and related cell structures
03/28/2002US20020036918 Thin film magnetic memory device capable of reducing number of wires and reading data at high speed
03/28/2002US20020036917 Nonvolatile solid-state memory devices and memory using magnetoresistive effect, and recording/reproducing method of the memory device and memory
03/28/2002US20020036916 Integrated memory having memory cells and buffer capacitors
03/28/2002US20020036913 Semiconductor storage device
03/28/2002US20020036877 Magnetoresistance effect device, magnetic head, magnetic recording apparatus, and memory device
03/28/2002US20020036606 Matrix substrate and liquid crystal display as well as projector using the same
03/28/2002US20020036605 Organic EL display device and method for driving the same
03/28/2002US20020036542 Mmic folded power amplifier
03/28/2002US20020036541 Mmic folded power amplifier
03/28/2002US20020036534 Manufacturing method of semiconductor device
03/28/2002US20020036529 Semiconductor integrated circuit with reduced leakage current
03/28/2002US20020036521 Semiconductor integrated circuit and semiconductor integrated circuit system
03/28/2002US20020036471 Electroluminescent element
03/28/2002US20020036463 Color display apparatus having electroluminescence elements
03/28/2002US20020036462 Display apparatus
03/28/2002US20020036354 Semiconductor device
03/28/2002US20020036353 Semiconductor device having a metal silicide layer and method for manufacturing the same
03/28/2002US20020036349 Semiconductor device and manufacturing
03/28/2002US20020036336 High K dielectric de-coupling capacitor embedded in backend interconnect
03/28/2002US20020036335 Spiral inductor and method for fabricating semiconductor integrated circuit device having same
03/28/2002US20020036333 High-gain pnp bipolar junction transistor in a cmos device and method for forming the same
03/28/2002US20020036331 Multi-bit magnetic memory cells
03/28/2002US20020036330 Semiconductor device with SOI structure and method of manufacturing the same
03/28/2002US20020036329 Field effect transistor and method of making
03/28/2002US20020036323 Semiconductor device and method of manufacturing the same
03/28/2002US20020036322 SOI stacked dram logic
03/28/2002US20020036321 Semiconductor device and maufacturing method thereof
03/28/2002US20020036319 Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes and methods of forming same
03/28/2002US20020036317 Nonvolatile semiconductor memory device having element isolating region of trench type and method of manufacturing the same
03/28/2002US20020036316 Process for producing semiconductor memory device and semiconductor memory device
03/28/2002US20020036315 Magnetoresistive element and magnetoresistive device using the same
03/28/2002US20020036314 Semiconductor memory device
03/28/2002US20020036313 Memory cell capacitor structure and method of formation
03/28/2002US20020036308 Semiconductor memory and its production process
03/28/2002US20020036307 Semiconductor device having ferroelectric material capacitor and method of making the same
03/28/2002US20020036306 Semiconductor device having a reduced leakage current and a fabrication process thereof
03/28/2002US20020036305 Ferroelectric memory device and method for manufacturing same
03/28/2002US20020036303 CMOS image sensor and manufacturing method for the same
03/28/2002US20020036300 Image sensor with motion artifact supression and anti-blooming
03/28/2002US20020036292 Solid-state imaging device
03/28/2002US20020036291 Multilayer structures as stable hole-injecting electrodes for use in high efficiency organic electronic devices
03/28/2002US20020036288 Semiconductor display device and manufacturing method thereof
03/28/2002US20020036267 Planar X-ray detector
03/28/2002US20020035961 Forming a ceramic film by crystallizing a raw material body which contains different types of raw material in mixed state, the different types of raw materials differ from one another in crystal growth condition and crystallization mechanism
03/28/2002DE10119383A1 Hochfrequenz-Halbleitervorrichtung High-frequency semiconductor device
03/28/2002DE10115489A1 Semiconductor device e.g. MOSFET has gate insulating film consisting of deuterium atom content silicon nitride film and silicon oxide film
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