Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
12/1990
12/18/1990US4979146 Electrically erasable non-volatile semiconductor device
12/14/1990CA2015305A1 Method and apparatus for updating firmware resident in an electrically erasable programmable read-only memory
12/13/1990WO1990015413A1 Programming voltage control circuit for eproms
12/05/1990EP0400483A2 Programming method for semiconductor memory device
12/04/1990US4975883 Method and apparatus for preventing the erasure and programming of a nonvolatile memory
12/04/1990US4975876 Method for arranging a read-only memory for reading out updating status information in an integrated circuit
11/1990
11/28/1990EP0399820A2 Semiconductor memories
11/28/1990EP0399527A2 Non-volatile semiconductor memory device
11/28/1990EP0399362A2 A sense amplifier circuit
11/28/1990EP0399258A2 Semiconductor memory device having self-correcting function
11/28/1990EP0159928B1 Semiconductor integrated circuit device having fuse-type information storing circuit
11/27/1990US4974207 Semiconductor memory device
11/27/1990US4974206 Nonvolatile semiconductor memory device having reference potential generating circuit
11/27/1990US4974204 Non-volatile programmable interconnection circuit
11/22/1990EP0398654A2 Apparatus for writing data to an eeprom
11/22/1990EP0398545A1 Method and apparatus for storing data in a non-volatile memory
11/22/1990EP0398067A2 Combined multiple memories
11/22/1990EP0398048A2 High-speed data reading semiconductor memory device
11/20/1990US4972378 Nonvolatile memory circuit device performing stable operation in wide range of power source voltage level
11/20/1990US4972375 Programmable semiconductor memory circuit
11/14/1990EP0397194A2 Semiconductor memory device having two types of memory cell
11/13/1990US4970727 Semiconductor integrated circuit having multiple self-test functions and operating method therefor
11/13/1990US4970691 2-cell/1-bit type EPROM
11/13/1990US4970686 Semiconductor memory cells and semiconductor memory device employing the semiconductor memory cells
11/13/1990US4970409 Voltage multiplier for nonvolatile semiconductor memory
11/07/1990EP0396263A2 EEPROM device
11/07/1990EP0395894A2 Electronic circuit for analog multiplication, differential amplification or charge accumulation
11/07/1990EP0259444B1 Nonvolatile memory system having a testing capability
11/06/1990US4969124 Programmable device
10/1990
10/31/1990EP0394705A1 A nonvolatile memory system for multiple value storing
10/30/1990US4967415 EEPROM system with bit error detecting function
10/30/1990US4967399 Erasable and programmable read-only memory system
10/30/1990US4967393 Flash erasable and programmable nonvolatile semiconductor memory
10/23/1990US4965768 Semiconductor device having programmable read only memory cells for specific mode
10/18/1990WO1990012402A1 Improved novram cell using two differential, decouplable nonvolatile memory elements
10/17/1990EP0392895A2 Flash EEprom system
10/16/1990US4964079 Electrically programmable memory with several information bits per cell
10/16/1990US4964078 Combined multiple memories
10/10/1990EP0390859A1 Low power voltage clamp circuit.
10/09/1990US4962482 Nonvolatile memory device using a sense circuit including variable threshold transistors
10/09/1990US4962481 EEPROM device with plurality of memory strings made of floating gate transistors connected in series
10/09/1990US4962478 High speed programmable read only memory device having a high integration density and diode in the programming path
10/03/1990EP0389693A1 EPROM enabling multiple use of bit line contacts
10/03/1990EP0389584A1 Transistor breakdown protection circuit.
09/1990
09/26/1990EP0388752A2 Reference cell for reading eeprom memory devices
09/25/1990US4959812 Electrically erasable programmable read-only memory with NAND cell structure
09/19/1990EP0387889A2 Nonvolatile semiconductor memory
09/18/1990US4958324 Method for the testing of electrically programmable memory cells, and corresponding integrated circuit
09/18/1990US4958321 Electrically programmable/erasable semiconductor
09/18/1990US4958317 Nonvolatile semiconductor memory device and a writing method using electron tunneling
09/12/1990EP0387102A2 Semi-conductor non-volatile memory and method of writing the same
09/12/1990EP0387101A2 Semi-conductor non-volatile memory and method of writing the same
09/12/1990EP0386573A2 Method for vertical fuse testing
09/11/1990US4956816 Non-volatile semiconductor memory having improved testing circuitry
09/04/1990US4954990 Programming voltage control circuit for EPROMS
08/1990
08/28/1990US4953133 Decoder buffer circuit incorporated in semiconductor memory device
08/28/1990US4953129 Nonvolatile semiconductor memory device capable of reliably writing data and a data writing method therefor
08/28/1990CA1273414A1 Cmos-gate arrays
08/22/1990EP0383452A2 Semiconductor memory device having means for replacing defective memory cells
08/22/1990EP0383009A2 Sense amplifier in use with a semiconductor memory device
08/22/1990EP0382927A1 ECL EPROM with CMOS programming
08/21/1990US4951257 Reference setting circuit for determining written-in content in nonvolatile semiconductor memories
08/14/1990US4949307 Circuit for sensing the state of matrix cells in MOS EPROM memories including an offset current generator
08/14/1990US4949305 Erasable read-only semiconductor memory device
08/08/1990EP0381405A1 Semiconductor memory device having mask rom structure
08/08/1990EP0381404A2 Non-volatile memory
08/08/1990EP0381120A2 High speed ECL input buffer for vertical fuse arrays
08/07/1990US4947378 Memory element exchange control circuit capable of automatically refreshing a defective address
08/01/1990EP0380456A2 Field programmable logic and analogic integrated circuit
08/01/1990EP0379693A2 A non-volatile semiconductor memory device having a circuit for applying a program voltage
07/1990
07/30/1990CA2008406A1 Non-volatile memory
07/24/1990US4943967 Semiconductor memory with an improved dummy cell arrangement and with a built-in error correction code circuit
07/24/1990US4943962 Nonvolatile semiconductor memory having page mode programming function
07/24/1990US4943943 Read-out circuit for semiconductor nonvolatile memory
07/18/1990EP0377841A2 Semiconductor integrated circuit capable of preventing occurrence of erroneous operation due to noise
07/18/1990EP0377840A2 Nonvolatile semiconductor memory device having reference potential generating circuit
07/18/1990EP0377839A2 Semiconductor memory device capable of preventing data of non-selected memory cell from being degraded
07/18/1990EP0221104B1 Voltage multiplier circuit
07/12/1990DE4000219A1 Semiconductor memory with externally applied programming voltage - has programming voltage detector determining its level w.r.t. preset one
07/11/1990EP0377368A1 Data-processing device having a non-volatile electrically erasable and reprogrammable memory
07/04/1990EP0376568A2 Read-only memory cell and method of forming same
07/04/1990EP0376290A2 Nonvolatile semiconductor memory device capable of preventing read error caused by overerase state
07/04/1990EP0376065A2 Semiconductor memory integrated circuit
07/03/1990US4939692 Read-only memory for microprocessor systems having shared address/data lines
06/1990
06/28/1990WO1990007185A1 Data processing device comprising a non-volatile, electrically erasable and reprogrammable memory
06/27/1990EP0375203A2 Fast epal sense amplifier
06/27/1990EP0374936A2 Nonvolatile semiconductor memory system
06/27/1990EP0211069A4 Efficient page mode write circuitry for e?2 proms.
06/27/1990CN1008566B Chinese characters generator
06/26/1990US4937830 Semiconductor memory device having function of checking and correcting error of read-out data
06/26/1990US4937787 Programmable read only memory with means for discharging bit line before program verifying operation
06/26/1990US4937465 Apparatus to urge a current spike into a fuse
06/21/1990DE3929816A1 EEPROM with NAND cell arrangement - uses memory chains of individual memory cells programmed via relatively small voltages
06/21/1990DE3906494A1 Error bit generation circuit for use in a non-volatile semiconductor memory device
06/20/1990EP0373830A2 Floating gate transistor
06/20/1990EP0373410A2 Memory for programmable digital filter
06/19/1990US4935645 Fusing and detection circuit
06/13/1990EP0372873A2 Integrated-circuit configuration having fast local access time
06/12/1990US4933906 Non-volatile semiconductor memory device
06/05/1990US4931996 Semiconductor memory device
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