Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133) |
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05/28/1991 | US5020026 Method and apparatus for reading and programming electrically programmable memory cells |
05/28/1991 | US5020025 Capacitively coupled read-only memory |
05/28/1991 | US5019881 Nonvolatile semiconductor memory component |
05/21/1991 | US5018108 Nonvolatile semiconductor memory |
05/21/1991 | US5018107 Semiconductor memory device |
05/21/1991 | US5018103 Read-only memory for a gate array arrangement |
05/21/1991 | US5017978 EPROM having a reduced number of contacts |
05/14/1991 | US5016222 Circuit responsive to a voltage change for detecting erroneous writing into a memory |
05/14/1991 | US5016218 Nonvolatile memory with data write circuitry to reduce write errors |
05/14/1991 | US5015890 Sense amplifier having pull-up circuit controlled by feedback |
05/14/1991 | US5015601 Method of manufacturing a nonvolatile semiconductor device |
05/08/1991 | EP0426417A2 Non-volatile semiconductor memory device |
05/08/1991 | EP0426282A2 Three transistor EEPROM cell |
05/08/1991 | EP0426241A2 Process for the manufacture of a component to limit the programming voltage and to stabilise the voltage incorporated in an electric device with EEPROM memory cells |
05/07/1991 | US5014243 Programmable read only memory (PROM) having circular shaped emitter regions |
05/07/1991 | US5013943 Single ended sense amplifier with improved data recall for variable bit line current |
05/02/1991 | EP0424964A2 Read only memory device |
05/02/1991 | EP0424962A2 Semiconductor memory device |
04/30/1991 | US5012451 ROM circuit |
04/30/1991 | US5012445 Programmable read only memory being capable of controlling internal writing voltage of external voltage |
04/30/1991 | US5011787 Matrix of memory points on semiconductor substrate |
04/24/1991 | EP0424191A2 Device and method for defect handling in semi-conductor memory |
04/24/1991 | EP0423833A1 Non-volatile memory device |
04/23/1991 | US5010331 Time-key integrated circuit |
04/17/1991 | EP0422930A2 Semiconductor integrated circuit devices |
04/17/1991 | EP0090332B1 Semiconductor memory device |
04/16/1991 | US5008855 Method of programming anti-fuse element |
04/16/1991 | US5008569 High-speed dynamic CMOS circuit and precharge generator |
04/16/1991 | US5008566 Power supply voltage drop detection circuit for use in EEPROM memory |
04/10/1991 | EP0421425A2 Memory control system |
04/10/1991 | EP0421168A2 Semiconductor memory with metallic interconnection layer of the same potential as the word line and connected thereto outside of the memory cell region |
04/09/1991 | US5007026 Method for the testing of one time programmable memories and corresponding memory |
04/09/1991 | US5007023 Bitline precharge circuit of multi-sectional memory array |
04/09/1991 | CA1282875C Device for testing the operation of an eprom or an eeprom memory cell readingsystem |
04/03/1991 | EP0420822A1 Method of storing analogue values and device for its implementation |
04/03/1991 | EP0420752A1 Integrated programmable logic array |
04/03/1991 | EP0420477A2 A decoder circuit for a PROM |
04/03/1991 | EP0419760A2 Zero standby power, radiation hardened, memory redundancy circuit |
04/02/1991 | US5005155 Optimized electrically erasable PLA cell for minimum read disturb |
04/02/1991 | US5005154 High speed programmable read on memory device formed by bipolar transistors |
04/02/1991 | US5005153 Data processor integrated on a semiconductor substrate |
03/27/1991 | EP0419260A2 Electrically erasable and programmable non-volatile semiconductor memory device |
03/27/1991 | EP0419202A2 A semiconductor memory device |
03/26/1991 | US5003512 Integrated memory circuit having a high-voltage switch |
03/26/1991 | US5003511 Voltage supply switching device for nonvolatile memories in MOS technology |
03/26/1991 | US5003371 Fuse-melting device |
03/26/1991 | US5003205 Buffer circuit used in a semiconductor device operating by different supply potentials and method of operating the same |
03/21/1991 | WO1991003876A1 High-speed dynamic cmos circuit |
03/13/1991 | EP0417008A1 Locking device composed of a never programmable floating gate cell |
03/12/1991 | US4999813 Nonvolatile semiconductor memory having a stress test circuit |
03/12/1991 | US4999812 Architecture for a flash erase EEPROM memory |
03/06/1991 | EP0415221A2 Non-volatile programmable interconnection circuit |
03/05/1991 | US4998223 Programmable semiconductor memory apparatus |
02/28/1991 | DE4025158A1 Encased PROM with memory cell field - has field cells in matrix of lines and columns, and replacement memory cell |
02/27/1991 | EP0238549B1 Nonvolatile memory cell |
02/26/1991 | US4996670 Zero standby power, radiation hardened, memory redundancy circuit |
02/26/1991 | US4996571 Non-volatile semiconductor memory device erasing operation |
02/26/1991 | US4996451 Programmable static selection circuit for programmable devices |
02/21/1991 | WO1991002409A1 Single ended sense amplifier with improved data recall from variable bit line current |
02/20/1991 | EP0413347A2 Semiconductor nonvolatile memory device |
02/13/1991 | EP0412837A2 Ultraviolet erasable non-volatile memory devices |
02/13/1991 | EP0412251A2 Write-once-read-once batteryless authentication token |
02/12/1991 | US4992980 Electrically programmable memory |
02/06/1991 | EP0411573A2 Nonvolatile semiconductor memory device and method of operating the same |
02/05/1991 | US4990992 Semiconductor integrated circuit device |
02/05/1991 | US4990489 Read only memory device including a superconductive electrode |
01/30/1991 | EP0410492A2 Non-volatile semiconductor memory device having an improved testing mode of operation and method of forming checkerwise test pattern in memory cell array |
01/30/1991 | EP0410424A2 Nonvolatile semiconductor device and method of manufacturing the same |
01/29/1991 | US4989184 Semiconductor memory device having current type sense amplifier improved for high speed operation and operating method therefor |
01/23/1991 | EP0409697A1 MOS integrated circuit with adjustable threshold voltage |
01/23/1991 | EP0409672A1 Erasing procedure for memory cells, means for its implementation and its use in a powerless memory device |
01/16/1991 | EP0408419A1 Use of an electrically programmable MOS cell to implement a fuse |
01/16/1991 | EP0408368A2 Semi-conductor non-volatile memory device |
01/16/1991 | EP0408234A2 A non-volatile counter |
01/16/1991 | EP0408057A2 Semiconductor memory device |
01/16/1991 | EP0408037A2 Semiconductor memory device |
01/16/1991 | EP0408002A2 A programmable semiconductor memory apparatus |
01/15/1991 | US4985650 Programmable logic circuit having bidirectional data lines |
01/15/1991 | US4985649 Connection network for the adjustable connection of a PLA |
01/09/1991 | EP0407329A1 Method of optically recording data, and semiconductor devices particularly useful therein |
01/09/1991 | EP0406861A2 Non-volatile semiconductor memory device |
01/08/1991 | US4984212 Semiconductor memory |
01/03/1991 | DE4018977A1 EEPROM with NAND memory cells - has potential stabiliser above semiconductor support layer, next to respective data transmission line |
01/02/1991 | EP0406007A2 Non volatile semiconductor memory device |
01/02/1991 | EP0405220A2 Semiconductor memory device |
01/02/1991 | EP0405140A1 Bit- and block-erasing of an electrically erasable and programmable read-only memory array |
01/02/1991 | EP0277152A4 One-time programmable data security system for programmable logic device |
01/01/1991 | US4982377 Erasable programmable read only memory device improved in operation speed and in the amount of read out current |
01/01/1991 | US4982372 Semiconductor memory device having divided word or bit line drivers and operating method therefor |
01/01/1991 | US4982364 Semiconductor memory having a stabalized reference potential for use in detecting a data read out from a memory cell |
01/01/1991 | US4982363 Sensing structure for single ended input |
01/01/1991 | US4982360 Memory subsystem |
12/27/1990 | EP0403822A1 Circuit and method for conditioning erased eeproms prior to programming |
12/26/1990 | CN1048122A Internal voltage transducer of semiconductor integrated circuit |
12/25/1990 | US4980861 NAND stack ROM |
12/25/1990 | US4980859 NOVRAM cell using two differential decouplable nonvolatile memory elements |
12/25/1990 | US4980582 High speed ECL input buffer for vertical fuse arrays |
12/20/1990 | DE4006306A1 Innerer spannungswandler in einer integrierten halbleiterschaltung Internal voltage converter in an integrated semiconductor circuit |
12/19/1990 | EP0402683A2 Method and apparatus for updating firmware resident in an electrically erasable programmable read-only memory |
12/18/1990 | US4979149 Non-volatile memory device including a micro-mechanical storage element |