Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
08/1995
08/02/1995EP0665558A1 Method for programming and testing a non-volatile memory
08/02/1995EP0665485A1 Current source
08/01/1995US5438550 Address transition detecting circuit of a semiconductor memory device
08/01/1995US5438547 Memory-unit sense amplifier
08/01/1995US5438544 Non-volatile semiconductor memory device with function of bringing memory cell transistors to overerased state, and method of writing data in the device
07/1995
07/27/1995WO1995020225A1 Method and circuitry for storing discrete amounts of charge in a single memory element
07/26/1995EP0664544A2 Stress reduction for non-volatile memory cell
07/26/1995EP0664046A1 Remotely re-programmable program memory for a microcontroller
07/25/1995US5436479 Electrically programmable integrated memory with only one transistor
07/19/1995EP0663695A2 Electrically erasable programmable non-volatile semiconductor memory device having select gates and small number of contact holes, and method of manufacturing the device
07/19/1995EP0663669A2 Improvements in or relating to fuse and antifuse link structures for integrated circuits
07/19/1995EP0663665A2 Memory cell with programmable antifuse technology
07/18/1995US5434819 Semiconductor memory device having an automatically activated verify function capability
07/18/1995US5434815 Stress reduction for non-volatile memory cell
07/18/1995US5434814 Circuit for repairing defective read only memories with redundant NAND string
07/12/1995EP0662690A1 Bias circuit for a memory line decoder driver of non-volatile memories
07/12/1995EP0662659A1 Method for minimizing the effect of memory errors within a digital information storage system
07/12/1995CN1105145A Non-volatile semiconductor store and data programing method
07/11/1995US5432746 EEPROM memory organized in plural bit words
07/11/1995US5432741 Circuit for permanently disabling EEPROM programming
07/11/1995US5432738 Nonvolatile semiconductor storage system
07/11/1995CA2118543A1 Method for minimizing the effect of memory errors within a digital information storage system
07/05/1995EP0661814A1 End-of-count detecting device, particularly for nonvolatile memories
07/05/1995EP0661795A1 Voltage booster, particularly for nonvolatile memories
07/05/1995EP0661718A2 Method and circuit for flash-erasing EEPROMs
07/05/1995EP0661717A1 Voltage regulator for programming non-volatile and electrically programmable memory cells
07/05/1995EP0661716A1 Voltage regulator for non-volatile semiconductor memory devices
07/05/1995EP0661715A1 Voltage regulator for non-volatile electrically programmable semiconductor memory devices
07/05/1995EP0661714A1 Circuit device and corresponding method for resetting non-volatile and electrically programmable memory devices
07/05/1995EP0661713A1 Threshold voltage detector circuit
07/05/1995EP0661711A1 Data reading method in semiconductor storage device capable of storing three- or multi-valued data in one memory cell
07/05/1995EP0661709A1 Semiconductor memory having a high speed sense amplifier
07/05/1995EP0661636A1 Integrated programming circuitry for an electrically programmable semiconductor memory device with redundancy
07/05/1995EP0660963A1 High speed memory sense amplifier with noise reduction
07/04/1995US5430674 Method and apparatus for sequential programming of a flash EEPROM memory array
07/04/1995US5429968 Method of forming a mask programmable read only memory device with multi-level memory cell array
06/1995
06/28/1995EP0660333A1 Integrated circuit memory with improved reading time
06/27/1995US5428578 Biasing circuit and method to achieve compaction and self-limiting erase in flash EEPROMs
06/27/1995US5428577 Semiconductor storage device having word-line voltage booster circuit with decoder and charger
06/27/1995US5428571 Data latch circuit having non-volatile memory cell equipped with common floating gate and stress relaxing transistor
06/27/1995US5428570 Nonvolatile semiconductor memory device
06/27/1995US5428569 Non-volatile semiconductor memory device
06/27/1995US5428237 Semiconductor device having an insulated gate transistor
06/27/1995US5427967 Technique for making memory cells in a way which suppresses electrically conductive stringers
06/21/1995EP0658905A2 Electronic memory circuit
06/21/1995EP0658904A2 Semiconductor integrated circuit device
06/21/1995EP0658903A1 Double-row address decoding and selection circuitry for an electrically erasable and programmable non-volatile memory device with redundancy, particularly for flash EEPROM devices
06/20/1995USRE34974 Non-volatile memory circuit
06/20/1995US5426614 Memory cell with programmable antifuse technology
06/20/1995US5426611 Non-volatile semiconductor device
06/20/1995US5426609 Read only memory capable of writing data and method of writing/reading data therefor
06/20/1995US5426608 Word line redundancy nonvolatile semiconductor memory
06/20/1995US5426605 Semiconductor memory device
06/14/1995EP0657893A2 High-density read-only data storage
06/14/1995EP0657890A2 High voltage components for EEPROM system
06/14/1995EP0657818A1 Non-volatile memory chip enable signal encoding method and system
06/13/1995US5424987 Semiconductor memory device having redundant memory cells and circuit therefor
06/13/1995US5424982 Semiconductor memory device having two different output buffers for one output terminal
06/13/1995US5424655 Programmable application specific integrated circuit employing antifuses and methods therefor
06/10/1995CA2117933A1 High-density read-only data storage
06/07/1995EP0656663A2 Non-volatile semiconductor memory device and method for erasure and production thereof
06/07/1995EP0656629A2 Gate power supply
06/07/1995EP0656628A2 Programmed reference
06/07/1995EP0656627A2 An adjustable threshold voltage circuit
06/06/1995US5422856 Non-volatile memory programming at arbitrary timing based on current requirements
06/06/1995US5422854 Sense amplifier for receiving read outputs from a semiconductor memory array
06/06/1995US5422844 Nonvolatile semiconductor memory
06/06/1995US5422843 Method of erasing information in memory cells
06/06/1995US5422291 Method of making an EPROM cell with a readily scalable interpoly dielectric
05/1995
05/31/1995EP0655743A1 Integrated circuit for the programming of a memory cell in a non-volatile memory register
05/31/1995EP0655742A1 Integrated device with electrically programmable and erasable memory cells
05/30/1995US5420818 Static read only memory (ROM)
05/30/1995US5420817 Semiconductor integrated circuit device comprising memory area in which structurally different memory cells are included
05/30/1995US5420505 Direct current booster with test circuit
05/24/1995EP0654792A1 Non-volatile electrically alterable memory with write control
05/24/1995EP0654791A1 Method for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device, and integrated structure for actuating such method
05/24/1995CN1102903A 半导体存储装置 The semiconductor memory device
05/23/1995US5418752 Flash EEPROM system with erase sector select
05/23/1995US5418742 Nonvolatile semiconductor memory with block erase select means
05/23/1995US5418739 Semiconductor memory device
05/23/1995US5418738 Low voltage programmable storage element
05/23/1995US5418487 Fuse state sense circuit
05/18/1995WO1995013616A1 Single transistor per cell eeprom memory device with bit line sector page programming
05/16/1995US5416737 MOS memory unit for serial information processing
05/16/1995US5416343 Semiconductor device provided with a number of programmable elements
05/10/1995EP0652567A2 Electrical circuit including an electrically interruptible circuit element
05/10/1995EP0652566A1 Fuse blow circuit
05/09/1995US5414829 Override timing control circuitry and method for terminating program and erase sequences in a flash memory
05/09/1995US5414825 Method of programming a semiconductor memory device within a microcomputer address space
05/09/1995US5414669 Method and apparatus for programming and erasing flash EEPROM memory arrays utilizing a charge pump circuit
05/09/1995US5414663 VLSI memory with an improved sense amplifier with dummy bit lines for modeling addressable bit lines
05/09/1995US5414658 Electrically erasable programmable read-only memory array
05/09/1995US5414379 Output buffer circuit for integrated circuit
05/09/1995US5414364 In an integrated circuit
05/03/1995EP0651394A1 Integrated circuit comprising a protected memory and protected circuit using said integrated circuit
05/03/1995EP0603285B1 Circuit for controlling the programming voltage of programmable memories
05/03/1995EP0575480B1 Programming method for integrated memory, particularly for smart card
05/03/1995EP0561930B1 Single transistor eeprom memory cell
05/02/1995US5412662 Memory testing device for preventing excessive write and erasure
05/02/1995US5412614 Electronic matrix array devices and systems incorporating such devices
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