Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
11/1995
11/07/1995US5465249 Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
11/07/1995US5465235 Non-volatile memory device with a sense amplifier capable of copying back
11/07/1995US5464999 Method for programming an alternate metal/source virtual ground flash EPROM cell array
11/02/1995EP0680087A2 Semiconductor devices utilising silicide reaction for manufacturing adaptable interconnections
11/02/1995EP0680050A1 Flash EEPROM with auto-function for automatically writing or erasing data
10/1995
10/31/1995US5463757 Command interface between user commands and a memory device
10/31/1995US5463583 Non-volatile semiconductor memory device
10/31/1995US5463579 Semiconductor memory device with floating gate and method for driving the same
10/25/1995EP0678915A2 Integrated semiconductor device with an EEPROM, semiconductor substrate with such integrated circuits and method for use of such a semiconductor substrate
10/25/1995EP0678875A1 Method and circuits for erasing memory
10/25/1995EP0678874A1 Memory array cell reading circuit
10/25/1995EP0678873A1 Load signal generating method and circuit for non-volatile memories
10/25/1995EP0678870A1 Method and circuit for suppressing data loading noise in non-volatile memories
10/25/1995EP0678869A1 Method and circuit for timing the loading of non-volatile memory output data.
10/25/1995EP0678211A1 Read-only memory cell
10/24/1995US5461713 Current offset sense amplifier of a modulated current or current unbalance type for programmable memories
10/24/1995US5461593 Word-line driver for a semiconductor memory device
10/19/1995DE4413257A1 Integrierte Schaltungsanordnung mit einem EEPROM, Halbleiterscheibe mit solchen integrierten Schaltungen sowie Verfahren zur Verwendung einer solchen Halbleiterscheibe Integrated circuit arrangement having an EEPROM, the semiconductor wafer having such integrated circuits as well as methods of using such a semiconductor wafer
10/18/1995EP0677850A2 Method and apparatus for programming memory devices
10/18/1995CN1110488A Data writing to non-volatile memory
10/17/1995US5459694 Nonvolatile storage apparatus with folded bit line structure
10/17/1995US5459693 Very large scale integrated planar read only memory
10/17/1995US5459692 Semiconductor memory device and method for reading data therefrom
10/17/1995US5459689 Memory device with current path cut-off circuit for sense amplifier
10/12/1995DE19513011A1 Non-volatile semiconductor EEPROM for microcomputer
10/11/1995EP0676811A1 EEPROM cell with isolation transistor and methods for making and operating the same
10/11/1995EP0676769A1 Electrically alterable read only memory comprising test functions
10/11/1995EP0676768A1 Reference signal generating method and circuit for differential evaluation of the content of non-volatile memory cells
10/11/1995CN1030022C Integrated semiconductor circuit of master slice type
10/11/1995CN1030020C Internal voltage transducer of semiconductor integrated circuit
10/10/1995US5457771 Integrated circuit with non-volatile, variable resistor, for use in neuronic network
10/10/1995US5457658 For controlling a data processing system
10/10/1995US5457651 Method and architecture for accelerated programming of uniform data into an electrically programmable memory
10/10/1995US5457649 Semiconductor memory device and write-once, read-only semiconductor memory array using amorphous-silicon and method therefor
10/05/1995DE4309814C2 Nichtflüchtige Halbleiterspeichervorrichtung A non-volatile semiconductor memory device
10/04/1995EP0675504A1 Circuit device for measuring the threshold voltage distribution of non-volatile memory cells
10/04/1995EP0675503A1 Integrated memory with circuit to maintain column voltage
10/04/1995EP0675502A2 Multiple sector erase flash EEPROM system
10/04/1995EP0675500A1 An improved memory device and method of construction
10/04/1995EP0675441A1 Redundancy fuses matrix array for integrated memory and implementing method
10/04/1995EP0675440A1 Redundancy circuitry layout for a semiconductor memory device
10/04/1995EP0674799A1 Memory array with field oxide islands eliminated and method.
10/03/1995US5455795 Semiconductor memory device
10/03/1995US5455789 Nonvolatile semiconductor memory with selectively driven word lines
10/03/1995US5455788 SRAM to ROM programming connections to avoid parasitic devices and electrical overstress sensitivity
09/1995
09/27/1995EP0674264A1 Circuit for selecting redundant memory elements and FLASH EEPROM containing said circuit
09/26/1995US5453634 Non-volatile semiconductor device
09/20/1995EP0673037A1 Non-volatile semiconductor memory device
09/19/1995US5452258 Semiconductor read only memory
09/19/1995US5452250 Non-volatile register system utilizing thin-film floating-gate amorphous transistors
09/19/1995US5452249 Non-volatile semiconductor memory device with verify mode for verifying data written to memory cells
09/13/1995EP0399258B1 Semiconductor memory device having self-correcting function
09/12/1995US5450360 Flash EEPROM having memory cell arrays supplied respectively with erasing voltage via transfer gates different in current capability from each other
09/08/1995WO1995024057A2 Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
09/08/1995WO1995024040A1 Memory core organization
09/08/1995CA2184724A1 Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
09/05/1995US5448712 Circuitry and method for programming and erasing a non-volatile semiconductor memory
09/05/1995US5448578 Electrically erasable and programmable read only memory with an error check and correction circuit
09/05/1995US5448524 Semiconductor memory device
09/05/1995US5448518 Virtual ground type nonvolatile semiconductor memory device capable of simultaneously accessing two memory cells
09/05/1995US5448187 Antifuse programming method and circuit which supplies a steady current after a programming voltage has dropped
09/05/1995US5448184 Method and apparatus for programming anti-fuse devices
09/05/1995US5448091 Method of making contact alignment for nonvolatile memory devices
08/1995
08/30/1995EP0669720A1 Programmable logic array structure for semiconductor nonvolatile memories, particularly flash-EPROMs
08/30/1995EP0669622A1 Bias circuit for a transistor in a memory cell
08/29/1995US5446700 Decoder circuit having CMOS inverter circuits
08/29/1995US5446693 Semiconductor storage device
08/29/1995US5446690 Semiconductor nonvolatile memory device
08/29/1995US5446688 Non-volatile semiconductor memory device
08/29/1995US5446402 Noise tolerant code setting circuit
08/29/1995US5445987 Method of manufacturing a nonvolatile memory including a memory cell having a MISFET
08/23/1995EP0668593A1 Regulation circuit and method for the erasing phase of non-volatile memory cells
08/23/1995EP0668592A1 Internal timing method and circuit for programmable memories
08/23/1995EP0668591A1 Read timing method and circuit for nonvolatile memories
08/22/1995US5444664 Flash memory and a microcomputer
08/22/1995US5444663 Semiconductor integrated circuit operable and programmable at multiple voltage levels
08/22/1995US5444659 Semiconductor memory device having means for monitoring bias voltage
08/22/1995US5444655 Non-volatile semiconductor memory device with a small distribution width of cell transistor threshold voltage after erasing data
08/22/1995US5444654 ROM with Bi-CMOS gate arrays
08/22/1995US5444650 Semiconductor programmable read only memory device
08/22/1995US5444412 Programming voltage regulation circuit for programmable memories
08/22/1995US5444290 Method and apparatus for programming antifuse elements using combined AC and DC electric fields
08/17/1995WO1995022145A1 Semiconductor device
08/17/1995WO1995022144A1 Zero power high speed programmable circuit device architecture
08/16/1995EP0667038A1 Flash eeprom
08/16/1995EP0667026A1 Flash memory system, and methods of constructing and utilizing same
08/15/1995US5442768 Recording and reproducing data using batch erasable nonvolatile semiconductor memories capable of selectively erasing one of a plurality of data groups stored in one of the memories
08/15/1995US5442589 Fuse circuitry having physical fuse and non-volatile memory cell coupled to a detector
08/15/1995US5442308 Dynamic decoder circuit operative at low frequency clock signals without data destruction
08/09/1995EP0666593A1 Electronic circuit device
08/09/1995EP0666573A1 Non volatile flip-flop, programmed via the source, especially for memory redundancy circuit
08/09/1995EP0666572A1 Non volatile programmable flip-flop with predefined initial state, especially for memory redundancy circuit
08/09/1995EP0666571A1 Charge pump circuit
08/09/1995EP0665979A1 Verifiable security circuitry for preventing unauthorized access to programmed read only memory.
08/08/1995US5440509 Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines
08/08/1995US5440508 Zero power high speed programmable circuit device architecture
08/08/1995US5440506 Semiconductor ROM device and method
08/08/1995US5440505 Method and circuitry for storing discrete amounts of charge in a single memory element
08/08/1995CA2020718C Oxide breakdown mos fuse and its application to memory cards
08/02/1995EP0665559A1 Non volatile programmable flip-flop, with reduction of parasitic effects in read mode, especially for memory redundancy circuit
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