| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
|---|
| 10/18/1989 | EP0337172A2 Static random access memory device with a power dissipation reduction function |
| 10/17/1989 | US4875195 Semiconductor device with a reference voltage generator |
| 10/17/1989 | US4875194 Semiconductor memory device with protection cells |
| 10/17/1989 | US4875193 Semiconductor memory with improved cell arrangement |
| 10/17/1989 | US4875192 Semiconductor memory with an improved nibble mode arrangement |
| 10/17/1989 | US4875189 Random access memory device with nibble mode operation |
| 10/11/1989 | EP0336500A1 Integrated circuit comprising a programmable cell |
| 10/11/1989 | EP0336498A1 Semiconductor memory device |
| 10/11/1989 | EP0336319A2 Internal synchronization type MOS SRAM with address transition detecting circuit |
| 10/11/1989 | EP0336101A2 Semiconductor memory device |
| 10/10/1989 | US4873673 Driver circuit having a current mirror circuit |
| 10/10/1989 | US4873672 Dynamic random access memory capable of fast erasing of storage data |
| 10/10/1989 | US4873669 Random access memory device operable in a normal mode and in a test mode |
| 10/10/1989 | US4873665 Dual storage cell memory including data transfer circuits |
| 10/10/1989 | US4873664 Self restoring ferroelectric memory |
| 10/10/1989 | US4873455 Programmable ferroelectric polymer neural network |
| 10/04/1989 | EP0335149A2 Semiconductor memory redundancy scheme |
| 10/04/1989 | EP0335125A2 DRAM with redundancy and improved testability |
| 10/04/1989 | EP0335008A1 Soft error resistant data storage cells |
| 10/04/1989 | EP0334927A1 Integrated circuit trench cell |
| 10/04/1989 | EP0239569A4 Neurological and biological molecular electro-optical devices and method. |
| 10/04/1989 | CN1036097A Apparatus for and method of addressing data storage elements |
| 10/03/1989 | US4872143 Pseudo static random access memory employing dynamic memory cells |
| 10/03/1989 | US4872142 Semiconductor memory device with improved bit line arrangement |
| 10/03/1989 | US4872141 Radiation hard memory cell having monocrystalline and non-monocrystalline inverters |
| 09/27/1989 | EP0334676A2 Method of driving device having MIM structure |
| 09/26/1989 | US4870622 Use in a stamping operation |
| 09/26/1989 | US4870621 Dual port memory device with improved serial access scheme |
| 09/26/1989 | US4870620 Dynamic random access memory device with internal refresh |
| 09/26/1989 | US4870617 Semiconductor memory device having data bus reset circuits |
| 09/26/1989 | US4870616 Compact register set using a psram array |
| 09/26/1989 | US4870559 Intelligent transducer |
| 09/26/1989 | CA1260140A1 5-transistor memory cell which can be reliably read and written |
| 09/21/1989 | WO1989008919A1 Devices using superconductive crystals |
| 09/19/1989 | US4868788 Semiconductor memory device with improved word line drive circuit |
| 09/19/1989 | US4868484 Reference voltage generator using a charging and discharging circuit |
| 09/19/1989 | US4868483 Power voltage regulator circuit |
| 09/19/1989 | US4868419 Gated transmission circuit (on-chip) |
| 09/13/1989 | EP0331911A2 Charge amplifying trench memory cell |
| 09/12/1989 | US4866742 Register circuit with plural registers simultaneously reset when a selected register receives data |
| 09/12/1989 | US4866678 Dual-port memory having pipelined serial output |
| 09/12/1989 | US4866677 Semiconductor memory device with multiple alternating decoders coupled to each word line |
| 09/12/1989 | US4866676 Testing arrangement for a DRAM with redundancy |
| 09/12/1989 | US4866675 Semiconductor memory circuit having a delay circuit |
| 09/12/1989 | US4866674 Bitline pull-up circuit for a BiCMOS read/write memory |
| 09/12/1989 | US4866673 BI-MOS semiconductor memory having high soft error immunity |
| 09/12/1989 | US4866494 Semiconductor memory device having a plurality of memory cells of single transistor type |
| 09/12/1989 | US4866305 Multiple-input multiple-output decoding circuit |
| 09/07/1989 | DE3906897A1 Semiconductor memory device with improved redundancy circuit |
| 09/06/1989 | EP0331431A1 Semiconductor memory device with improved address wiring arrangement |
| 09/06/1989 | EP0331341A2 Output buffer arrangement |
| 09/06/1989 | EP0331322A2 Memory devices |
| 09/06/1989 | EP0331051A2 Magnetic device integrated circuit interconnection system |
| 09/06/1989 | EP0330852A2 Decoder/driver circuit for semiconductor memories |
| 09/06/1989 | EP0330743A2 Dynamic random access memory (RAM) |
| 09/06/1989 | EP0330656A1 Method of remote sensing of objects and apparatus therefor. |
| 09/05/1989 | US4864544 A Ram cell having means for controlling a bidirectional shift |
| 09/05/1989 | US4864540 Bipolar ram having no write recovery time |
| 09/05/1989 | US4864539 Radiation hardened bipolar static RAM cell |
| 09/05/1989 | US4864374 Two-transistor dram cell with high alpha particle immunity |
| 09/05/1989 | US4864168 Process for controlling an optical pnpn thyristor to be driven |
| 09/05/1989 | US4864164 Integrated circuit with switching noise reduction by feedback |
| 09/05/1989 | CA1259135A1 Selectively accessible memory having an active load |
| 08/30/1989 | EP0329910A1 Double stage sense amplifier for random access memories |
| 08/29/1989 | US4862421 Sensing and decoding scheme for a BiCMOS read/write memory |
| 08/29/1989 | US4862420 Internal interleaving type semiconductor memory device |
| 08/29/1989 | US4862416 Semiconductor memory device with redundant memory cell |
| 08/29/1989 | US4862415 Complementary semiconductor device reducing latch-up phenomenon |
| 08/29/1989 | US4862414 Small diameter roll |
| 08/29/1989 | CA1258910A1 Page mode operation of main system memory in a medium scale computer |
| 08/24/1989 | WO1989007827A1 Bipolar ram having state dependent write current |
| 08/24/1989 | WO1989007826A1 Bipolar ram with no write recovery time |
| 08/23/1989 | EP0329182A2 Decoder buffer circuit incorporated in semiconductor memory device |
| 08/23/1989 | EP0329177A2 Semiconductor memory device which can suppress operation error due to power supply noise |
| 08/23/1989 | EP0329100A2 Semiconductor device comprising a logic circuit and a memory |
| 08/22/1989 | US4860327 Latch circuit constructed with MOS transistors and shift register using the latch circuits |
| 08/22/1989 | US4860263 Semiconductor memory with random access via two separate inputs/outputs |
| 08/22/1989 | US4860260 Semiconductor memory device with testing of redundant memory cells |
| 08/22/1989 | US4860259 Dram with reduced-test-time mode |
| 08/22/1989 | US4860257 Level shifter for an input/output bus in a CMOS dynamic ram |
| 08/22/1989 | US4860256 Integrated circuit provided with switching elements for changeover to redundancy elements in a memory |
| 08/22/1989 | US4860255 Semiconductor memory |
| 08/22/1989 | US4860254 Non-volatile electronic memory |
| 08/22/1989 | US4860198 Microprocessor system |
| 08/22/1989 | US4859615 Semiconductor memory cell capacitor and method for making the same |
| 08/16/1989 | EP0328110A2 Operation mode setting circuit for DRAM |
| 08/15/1989 | US4858195 Bit line charge sensing apparatus having CMOS threshold voltage compensation |
| 08/15/1989 | US4858193 Preamplification method and apparatus for dram sense amplifiers |
| 08/15/1989 | US4858191 Semiconductor integrated circuit |
| 08/15/1989 | US4858190 Dual port semiconductor memory having random and serial access modes |
| 08/15/1989 | US4858189 Semiconductor integrated circuit |
| 08/15/1989 | US4858188 Semiconductor memory with improved write function |
| 08/15/1989 | US4858184 Radiation resistant bipolar memory |
| 08/15/1989 | US4858183 ECL high speed semiconductor memory and method of accessing stored information therein |
| 08/15/1989 | US4858181 Fast recovery PNP loaded bipolar static RAM memory cell with an independent current path |
| 08/15/1989 | US4857770 Output buffer arrangement for reducing chip noise without speed penalty |
| 08/15/1989 | US4857763 MOS semiconductor integrated circuit in which the production of hot carriers near the drain of a short n channel conductivity type MOS transistor is decreased |
| 08/15/1989 | US4857418 Nitrogen doped tantalum layer |
| 08/09/1989 | EP0326953A2 Bicmos write-recovery circuit |
| 08/09/1989 | EP0326708A2 Semiconductor memory circuit with improved bit line precharge circuit |