| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 05/23/2013 | WO2013073216A1 Silicon carbide substrate, semiconductor device and methods for producing same |
| 05/22/2013 | EP2594666A1 Method for producing aluminum nitride crystals |
| 05/22/2013 | CN202945380U Bidirectional symmetrical vacuumizing system of sapphire single crystal furnace |
| 05/22/2013 | CN202945379U Sectional type tungsten filament net heater for sapphire single crystal furnace |
| 05/22/2013 | CN202945378U Heat insulation device for growth of YVO4 crystal |
| 05/22/2013 | CN202945377U Heat insulation and heat preservation system for sapphire single crystal furnace |
| 05/22/2013 | CN202945376U Sewed base mat for silicon smelting furnaces |
| 05/22/2013 | CN202945374U Equipment for growing sapphire crystal by using kyropoulos method |
| 05/22/2013 | CN202945371U Internal crucible for high-temperature furnaces |
| 05/22/2013 | CN202945369U Reflecting screen for high-temperature furnaces |
| 05/22/2013 | CN202945368U Weighing mechanism of sapphire single crystal furnace |
| 05/22/2013 | CN202945367U Seed crystal device for sapphire single crystal furnace |
| 05/22/2013 | CN202945364U Crucible shaft and crucible combination body comprising same |
| 05/22/2013 | CN202945363U Single crystal furnace |
| 05/22/2013 | CN202945360U Hydraulic lifting type crucible supporting system for sapphire single crystal furnace |
| 05/22/2013 | CN103119207A Technique to modify the microstructure of semiconducting materials |
| 05/22/2013 | CN103114336A Method for annealing silicon carbide wafer |
| 05/22/2013 | CN103114335A Method for producing cadmium telluride or cadmium zinc telluride single crystal |
| 05/22/2013 | CN103114334A Compound tetrahydroxy barium borate and tetrahydroxy barium borate nonlinear optical crystal as well as preparation method and application |
| 05/22/2013 | CN103114333A Preparation method of monocrystalline spherical silicon dioxide particles |
| 05/22/2013 | CN103114332A Method for preparing gallium nitride monocrystal substrate by surface modification auto-separation |
| 05/22/2013 | CN103114331A Preparation technology of mono-crystal gallium arsenide film |
| 05/22/2013 | CN103114330A Method for attaching titanium dioxide one-dimensional array on porous aluminium mesh used for sewage treatment |
| 05/22/2013 | CN103114329A Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
| 05/22/2013 | CN103114328A Preparation method of 8-cun (110) magnetic field Czochralski crystal |
| 05/22/2013 | CN103114327A Molten-salt growth method for eliminating core package of low-temperature phase barium metaborate crystalloid |
| 05/22/2013 | CN103114326A Production method of zone-melted vapor doping silicon single crystal |
| 05/22/2013 | CN103114325A Method for producing gas-phase doping zone-melting silicon crystals |
| 05/22/2013 | CN103114225A High-strength hot-corrosion-resistant nickel-base monocrystal high-temperature alloy |
| 05/22/2013 | CN102286783B New method for preparing calcium sulfate whiskers |
| 05/22/2013 | CN102274744B Porous carborundum surface single-layered and b-axis oriented ZSM-5 zeolite coating material and preparation method thereof |
| 05/22/2013 | CN102239272B Composite materials for wettable cathodes and use thereof for aluminium production |
| 05/22/2013 | CN102154699B Method for growing sapphire monocrystal and growth equipment |
| 05/22/2013 | CN101921196B Organic amine phosphate nonlinear optical crystal [C6H9N3O2][HPO4] |
| 05/22/2013 | CN101851785B Method for producing group III nitride semiconductor |
| 05/21/2013 | CA2573935C Method for producing a three-dimensional photonic crystal using a double inversion technique |
| 05/17/2013 | CA2781478A1 Rhenium-free single crystal superalloy for turbine blades and vane applications |
| 05/16/2013 | WO2013070363A1 Thermal load leveling using anisotropic materials |
| 05/16/2013 | WO2013025024A3 Ingot growing apparatus and method of manufacturing ingot |
| 05/16/2013 | US20130122326 Electrodeposited Nano-Twins Copper Layer and Method of Fabricating the Same |
| 05/16/2013 | DE112011102417T5 Herstellung von polykristallinem Silizium Producing polycrystalline silicon |
| 05/16/2013 | DE102011118561A1 Preparing or cutting of silicon wafers from silicon ingot which is crystallized by specific crystallization method |
| 05/16/2013 | DE102008063129B4 Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat Manufacturing method of a co-doped SiC bulk and high-resistance SiC substrate |
| 05/16/2013 | DE102008063124B4 Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat Manufacturing method for a uniformly doped SiC bulk and uniformly doped SiC substrate |
| 05/15/2013 | EP2592650A1 Silicon carbide substrate, semiconductor device, and soi wafer |
| 05/15/2013 | CN202936515U Kyropoulos-method crystal growing furnace |
| 05/15/2013 | CN202936513U Crucible gripping device of sapphire crystal growth equipment |
| 05/15/2013 | CN202936512U Seed-crystal lifting shaft structure of sapphire crystal growing equipment |
| 05/15/2013 | CN202936511U Adjustable warm-keeping system for sapphire crystal growth |
| 05/15/2013 | CN202936509U Continuous-feeding silicon single crystal furnace |
| 05/15/2013 | CN103103612A Non-centrosymmetric rare-earth sulfide containing Mg |
| 05/15/2013 | CN103103611A Device and process for preparing aluminum nitride crystals by adopting spontaneous crystal seed method |
| 05/15/2013 | CN103103610A Neodymium-doped yttrium fluoride gadolinium lithium crystal and growing method of same |
| 05/15/2013 | CN103103609A N-type diamond semiconductor monocrystal and production method thereof |
| 05/15/2013 | CN103103608A Film formed by silver nanosheets and preparation method and application of film |
| 05/15/2013 | CN103103607A Thermal system for drawing 8 inch heavy As-doped silicon single crystal |
| 05/15/2013 | CN103103604A Manufacturing method of large-size C-oriented sapphire crystals |
| 05/15/2013 | CN103103602A Single-crystal structure of potassium nickel isopolyoxovanadate and preparation method |
| 05/15/2013 | CN103103601A Method for preparing crack-free photonic crystal on surface of super-hydrophobic organism or super-hydrophobic imitation organism |
| 05/15/2013 | CN103103502A Metal organic chemical vapor deposition apparatus and method |
| 05/15/2013 | CN102394224B Preparation method of chloro silane-samaric sulfide film on single crystal silicon surface |
| 05/15/2013 | CN102212720B Cr modified high-Mo Ni3Al-based single crystal high-temperature alloy and preparation method thereof |
| 05/15/2013 | CN101348940B Improved Bridgman growth method for compound semiconductor GaAs single crystal |
| 05/14/2013 | CA2712316C Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
| 05/10/2013 | WO2013067502A1 System and method for monolithic crystal growth |
| 05/10/2013 | WO2013065232A1 Single crystal manufacturing method |
| 05/10/2013 | WO2013065204A1 SiC SINGLE CRYSTAL MANUFACTURING METHOD |
| 05/10/2013 | WO2013064626A1 Crucible and method for the production of a (near) monocrystalline semiconductor ingot |
| 05/10/2013 | WO2013064527A1 Method for analysing the solidification behaviour of a silicon melt to form a silicon crystal |
| 05/10/2013 | WO2013032703A3 Purification of a metalloid by consumable electrode vacuum arc remelt process |
| 05/09/2013 | US20130112990 Gallium Nitride Devices with Compositionally-Graded Transition Layer |
| 05/08/2013 | EP2589688A1 Bna crystal |
| 05/08/2013 | EP2589687A1 Crucible and method for the production of a (near ) monocrystalline semiconductor ingot |
| 05/08/2013 | EP2589641A1 Scintillator material and scintillation detector |
| 05/08/2013 | EP2589071A2 Thin films and methods of making them using cyclohexasilane |
| 05/08/2013 | EP2588651A1 Growth of large aluminum nitride single crystals with thermal-gradient control |
| 05/08/2013 | EP2588650A1 Selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing materials |
| 05/08/2013 | EP2588649A1 Device and method for monitoring crystallization |
| 05/08/2013 | CN202925150U Monocrystal silicon secondary furnace chamber cleaner |
| 05/08/2013 | CN202925149U Thermal field structure for eliminating microcrystals from polycrystalline silicon ingot |
| 05/08/2013 | CN103098173A Polycrystalline silicon production |
| 05/08/2013 | CN103097291A Container for producing silicon ingot and method for producing silicon ingot |
| 05/08/2013 | CN103097011A High pressure high temperature (HPHT) method for the production of single crystal diamonds |
| 05/08/2013 | CN103091333A Polysilicon ingot-casting quartz crucible detection device |
| 05/08/2013 | CN103088427A Method for suppressing foaming of tungsten-based plasma facing material by use of columnar crystal |
| 05/08/2013 | CN103088426A Method for reducing seed crystal growth face defects of silicon carbide crystals |
| 05/08/2013 | CN103088425A Method for growing RbTiOPO4 crystal by adopting novel fluxing agent molten-salt method |
| 05/08/2013 | CN103088424A Compound sodium borate monohydrate nonlinear optical crystal, and preparation method and application thereof |
| 05/08/2013 | CN103088423A Compound barium boron oxyfluoride, barium boron oxyfluoride nonlinear optical crystal, and preparation methods and applications thereof |
| 05/08/2013 | CN103088422A Preparation method of molybdenum trioxide nanorod |
| 05/08/2013 | CN103088421A Method for chemically synthesizing high-purity hexagonal monocrystal calcium fluoride |
| 05/08/2013 | CN103088420A Crystalline silicon ingot and method of fabricating the same |
| 05/08/2013 | CN103088419A Graphite crucible of single-crystal silicon growth furnace |
| 05/08/2013 | CN103088418A Crystalline silicon ingot and its making method |
| 05/08/2013 | CN103088417A High-efficiency crucible for polycrystal ingot casting and preparation method thereof |
| 05/08/2013 | CN103088416A LED (Light-Emitting Diode) epitaxial wafer deposition process and LED epitaxial wafer deposition device |
| 05/08/2013 | CN103088414A Vapor-phase epitaxy deposition apparatus realizing nitride crystal homoepitaxy |
| 05/08/2013 | CN103088411A Seed crystal fixing method for growth of silicon carbide crystals |
| 05/08/2013 | CN103088409A Apparatus for vertical pulling growth of CdZnTe monocrystals, and method thereof |
| 05/08/2013 | CN103088408A Improved graphite crucible |