Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
07/2000
07/04/2000US6083886 Method of preparing oxide superconducting bulk body
06/2000
06/28/2000EP1013801A1 Process and apparatus for synthesizing and growing crystals
06/15/2000WO2000034552A1 Single crystal processing by in-situ seed injection
06/13/2000US6074476 Non-contact processing of crystal materials
06/08/2000WO2000033366A1 Method for the production of multi-crystalline semiconductor material
06/08/2000WO2000032852A1 Orientated solidified multi-crystalline silicon and method for producing same
06/06/2000US6071339 Continuous crystal plate growth process and apparatus
06/02/2000WO2000031322A1 Method for epitaxial growth on a substrate
06/02/2000WO2000031317A1 Reactor and method for chemical vapour deposition
05/2000
05/31/2000DE19855061A1 Melting furnace used in the production of silicon wafers for solar cells has floor heating beneath the crucible
05/31/2000DE19854838A1 Gerichtet erstarrtes multikristallines Silicium sowie Verfahren zu dessen Herstellung Directionally solidified multi-crystalline silicon, and process for its preparation
05/17/2000EP1001055A1 Gas turbine component
05/11/2000WO2000026422A1 High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same
05/09/2000US6061174 Image-focusing optical system for ultraviolet laser
04/2000
04/27/2000WO2000024040A2 Conductive isostructural compounds
04/26/2000EP0995820A1 Fluoride refining method and fluoride crystal manufacturing method, and optical part and aligner using same
04/12/2000EP0992618A1 Method of manufacturing compound semiconductor single crystal
04/11/2000US6048394 Method for growing single crystals from polycrystalline precursors
04/05/2000EP0990717A1 GaAs single crystal substrate and epitaxial wafer using the same
04/05/2000CN1249368A Single crystal substrate of gallium arsenide, and epitaxial wafer using same
04/04/2000US6045767 Charge for vertical boat growth process and use thereof
03/2000
03/22/2000EP0986655A1 THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS
03/09/2000WO2000012979A1 Sensitive element for an ultraviolet radiation detector and method for making the same
03/01/2000EP0981657A1 Device for solidification and continuous control of crystal growth
02/2000
02/22/2000US6027563 Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber
02/17/2000WO1999058925A3 Cantilever with whisker-grown probe and method for producing thereof
02/16/2000EP0979883A1 Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors
02/15/2000US6024792 Of metallic super-alloys on substrates with monocrystalline structure; melting surface of substrate with energy beam,melting the material to be introduced, solidification
02/02/2000EP0946411A4 Method for the synthesis of group iii nitride crystals
01/2000
01/19/2000EP0972093A1 Apparatus for producing castings with directional and single crystal structure
01/12/2000EP0971052A1 P-type GaAs single crystal and method for manufacturing the same
01/11/2000US6013872 High purity
01/05/2000EP0891828B1 Method and apparatus for directional solidification of a metal melt
01/04/2000US6010638 Semiconductor
12/1999
12/28/1999US6007645 Advanced high strength, highly oxidation resistant single crystal superalloy compositions having low chromium content
12/28/1999US6007622 Method of preparing group III-V compound semiconductor crystal
12/23/1999WO1999066089A1 Ni-BASED SINGLE CRYSTAL ALLOY HAVING COATING FILM FOR PREVENTING RECRYSTALLIZATION FRACTURE
12/23/1999DE19922736A1 Compound semiconductor single crystal is produced by the vertical Bridgman method
12/23/1999CA2301092A1 Ni-based single crystal alloy having coating film for preventing recrystallization fracture
12/22/1999EP0964943A1 METHOD FOR GROWING MONOCRYSTALS OF HIGH-TEMPERATURE SUPRACONDUCTORS MADE OF RARE EARTH-CUPRATES OF FORM SE 1+x?Ba 2-x?Cu 3?O 7-$g(d)?
12/16/1999WO1999064369A1 Method and apparatus for preparing a crystal of cremated remains
12/15/1999EP0963464A1 Melting pot with silicon protective layers, method for applying said layer and the use thereof
12/14/1999US6001271 Conductive/insulating graded GaAs bulk material
12/09/1999DE19712896A1 Crystalline metal silicon nitride for use in the laser industry
12/07/1999US5997640 Device and method for liquefying and crystallizing substances
11/1999
11/30/1999US5993545 Crucible for growing single crystals, process for making the same and use of the same
11/30/1999US5993540 Continuous crystal plate growth process and apparatus
11/23/1999US5989337 Dissolving raw material in solvent heated within crucible, cooling to crystallize material without cracking, desolventizing by evaporation, removing single crystal from crucible
11/23/1999US5988262 Sputtering target of single crystal aluminum alloy and method for producing the same
11/23/1999US5988257 Method and the directional solidification of a molten metal and a casting apparatus for the practice thereof
11/18/1999WO1999059199A1 CdTe CRYSTAL OR CdZnTe CRYSTAL AND METHOD FOR PREPARING THE SAME
11/18/1999WO1999058925A2 Cantilever with whisker-grown probe and method for producing thereof
11/11/1999WO1999057580A1 Light-conducting element for optical instruments, method for manufacturing this element and optical instrument on the basis of said element
11/09/1999US5981415 Containing two or more crystal phases of different component, having non-regular shape and three-dimensional network, atleast one crystal phase is single crystal; crystal phase being oxides and complex oxides of two or more metals
11/09/1999US5980789 Doping gallium selenide with indium; forming crystal from indium doped selenide
11/02/1999US5978070 Projection exposure apparatus
11/02/1999US5976957 Evaporating a metal as a catalyst on silicon substrate; heating; oxidation; removal
10/1999
10/27/1999CN1046006C Growth process for large-size cerium fluoride crystal
10/14/1999WO1999033605A9 Turbine components with skin bonded to substrates
10/13/1999EP0949358A2 Mold for producing silicon ingot and method for fabricating the same
10/13/1999EP0949357A1 Method for preparing oxide single crystalline materials
10/07/1999WO1999050481A1 Method of manufacturing compound semiconductor single crystal
10/06/1999EP0947613A1 Method of manufacturing single crystal and apparatus for manufacturing single crystal
10/06/1999EP0947610A2 A single crystal-manufacturing equipment and a method for manufacturing the same
10/06/1999EP0947609A2 Method of preparing a compound semiconductor crystal and compound semiconductor crystal
10/06/1999EP0946411A1 Method for the synthesis of group iii nitride crystals
10/05/1999US5961944 Directional solidification
09/1999
09/16/1999WO1999021680A3 Turbine blades made from multiple single crystal cast superalloy segments
09/10/1999WO1999033605A3 Turbine components with skin bonded to substrates
09/01/1999EP0939146A1 Method for producing silicon ingot having directional solidification structure and apparatus for producing the same
09/01/1999EP0597096B1 Method for producing magnetostrictive material
08/1999
08/31/1999US5945037 Optical polarizer material
08/25/1999EP0938030A1 Projection exposure apparatus
08/25/1999CN1044840C Method of using GaN/Al2O3 composite material as substrate in epitaxial growth of III-V families nitride
08/18/1999CN1226291A Method and apparatus for making directional solidification castings
08/04/1999CN1224695A Manufacturing method for calcium flubride crystal and processing method for calcium fluoride power
08/04/1999CN1044498C Manufacture of lead telluride with high tellurium content
08/03/1999US5932005 Crystallogenesis device and process
07/1999
07/28/1999EP0931184A1 Process for actively controlling defects during gaas crystal growth
07/20/1999US5925429 Pyrolytic boron nitride container, and manufacture thereof
07/08/1999WO1999034037A1 Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors
07/08/1999WO1999033605A2 Turbine components with skin bonded to substrates
07/08/1999CA2307496A1 Turbine components with skin bonded to substrates
07/07/1999EP0927777A1 Semiconductor crystal, and method and apparatus of production
07/07/1999EP0760024B1 Process and device for obtaining unfissured crystals
07/07/1999CN1222200A Nickel-base superalloy
07/07/1999CN1222199A Nickel-base superalloy
07/06/1999CA2138672C Single crystal nickel-based superalloy
06/1999
06/29/1999US5916384 Process for the preparation of nickel base superalloys by brazing a plurality of molded cavities
06/29/1999US5916382 High corrosion resistant high strength superalloy and gas turbine utilizing the alloy
06/24/1999WO1999031305A1 Device for measuring and controlling the solidification of an electrically conductive material
06/16/1999CN1219985A Method and apparatus for growing oriented whisker arrays
06/15/1999US5912473 Oligothiophene compound and polytetrafluoroethylene oriented film, polyphenylene vinylene
06/15/1999US5911824 Method for growing crystal
06/03/1999WO1999027164A1 Charge for vertical boat growth process and use thereof
06/02/1999EP0919646A1 Manufacturing method for calcium fluoride crystal and processing method for calcium fluoride powder
06/01/1999US5908503 Low defect density diamond single crystal and a process for the production of the same
05/1999
05/26/1999CN1043479C Crucible down-going method for growing of lead tungstate scintillating mega-single crystal
05/25/1999US5906717 Sputtering target of single crystal aluminum alloy
05/12/1999EP0914484A1 Nickel-base superalloy
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