Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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05/13/1998 | EP0606350B1 Gallium arsenide mesfet imager |
05/13/1998 | CN1181850A Output circuit |
05/13/1998 | CN1181843A Emitter ballast bypass for radio frequency power transistors |
05/13/1998 | CN1181840A Bottom electrode structure for dielectric capacitors and method of making the same |
05/13/1998 | CN1181658A Semiconductor device |
05/13/1998 | CN1181644A Input pad having enable terminal employed in low-current-consuming integrated circuit |
05/13/1998 | CN1181632A Dynamic memory |
05/13/1998 | CN1181631A 功率晶体管 Power Transistors |
05/13/1998 | CN1181628A Method for manufacturing semiconductor memory device having self-aligned contact |
05/13/1998 | CN1181627A Method for making semiconductor device and semiconductor device |
05/13/1998 | CN1181622A Method of forming well of semiconductor device |
05/13/1998 | CN1181538A Adder circuit and distribution structure |
05/13/1998 | CN1038376C Electrostatic discharge protection circuits using biased and terminated PNP transistor chains |
05/12/1998 | US5751651 Semiconductor integrated circuit device having a hierarchical power source configuration |
05/12/1998 | US5751640 Semiconductor memory device and method thereof |
05/12/1998 | US5751639 DRAM having a power supply voltage lowering circuit |
05/12/1998 | US5751636 Semiconductor memory device having data erasing mechanism |
05/12/1998 | US5751631 Flash memory cell and a new method for sensing the content of the new memory cell |
05/12/1998 | US5751630 SRAM cell employing substantially vertically elongated pull-up resistors |
05/12/1998 | US5751627 Memory cell that can store data nonvolatily using a ferroelectric capacitor, and a semiconductor memory device including such a memory cell |
05/12/1998 | US5751540 Ferroelectric capacitor with rhodium electrodes |
05/12/1998 | US5751525 EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages |
05/12/1998 | US5751507 KSD protection apparatus having floating EDS bus and semiconductor structure |
05/12/1998 | US5751492 Diffractive/Refractive lenslet array incorporating a second aspheric surface |
05/12/1998 | US5751261 Control system for display panels |
05/12/1998 | US5751201 Resonator with metal layers devoid of DC connection and semiconductor device in substrate |
05/12/1998 | US5751183 Bipolar transistor circuit having a free collector |
05/12/1998 | US5751179 Output driver for PCI bus |
05/12/1998 | US5751165 High speed customizable logic array device |
05/12/1998 | US5751160 Output buffer with improved operational speed and transitional current |
05/12/1998 | US5751141 IDDQ -testing of bias generator circuit |
05/12/1998 | US5751065 Integrated circuit with active devices under bond pads |
05/12/1998 | US5751054 Zener diodes on the same wafer with BiCDMOS structures |
05/12/1998 | US5751053 Semiconductor device having a bipolar transistor and method of manufacturing the same |
05/12/1998 | US5751052 Inductive driver circuit and method therefor |
05/12/1998 | US5751051 Semiconductor device equipped with electrostatic breakdown protection circuit |
05/12/1998 | US5751050 Semiconductor device having a polysilicon resistor element with increased stability and method of fabricating same |
05/12/1998 | US5751049 Two-color infrared detector |
05/12/1998 | US5751047 Semiconductor circuit with reduced P-N junction capacitance |
05/12/1998 | US5751046 Semiconductor device with VT implant |
05/12/1998 | US5751045 Nand type non-volatile memory device |
05/12/1998 | US5751043 SRAM with SIPOS resistor |
05/12/1998 | US5751042 Internal ESD protection circuit for semiconductor devices |
05/12/1998 | US5751041 Semiconductor integrated circuit device |
05/12/1998 | US5751040 Self-aligned source/drain mask ROM memory cell using trench etched channel |
05/12/1998 | US5751039 Programmable non-volatile memory cell and method of forming a non-volatile memory cell |
05/12/1998 | US5751038 Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers |
05/12/1998 | US5751037 Non-volatile memory cell having dual gate electrodes |
05/12/1998 | US5751036 Floating gate type non-volatile semiconductor memory device |
05/12/1998 | US5751035 Semiconductor device provided with LDD transistors |
05/12/1998 | US5751033 Frequency converter circuit structure having two sources |
05/12/1998 | US5751032 Color linear charge coupled device and method for driving the same |
05/12/1998 | US5751031 Memory and other integrated circuitry having a conductive interconnect line pitch of less than 0.6 micron |
05/12/1998 | US5751025 High voltage current limiter and method for making |
05/12/1998 | US5751020 Structure of a liquid crystal display unit having exposed channel region |
05/12/1998 | US5751019 Method and structure for reducing short circuits between overlapping conductors |
05/12/1998 | US5751012 Polysilicon pillar diode for use in a non-volatile memory cell |
05/12/1998 | US5751005 Low-crosstalk column differencing circuit architecture for integrated two-color focal plane arrays |
05/12/1998 | US5750985 High speed and high precisioin image scanning apparatus |
05/12/1998 | US5750433 Methods of forming electrically isolated active region pedestals using trench-based isolation techniques |
05/12/1998 | US5750431 Method for fabricating a stacked capacitor |
05/12/1998 | US5750427 Non-volatile memory cell structure and process for forming same |
05/12/1998 | US5750426 Method of making MOS precision capacitor with low voltage coefficient |
05/12/1998 | US5750419 Process for forming a semiconductor device having a ferroelectric capacitor |
05/12/1998 | US5749698 Substrate transport apparatus and substrate transport path adjustment method |
05/07/1998 | WO1998019455A1 Colour image sensor for short-time exposure |
05/07/1998 | WO1998019454A1 Image signal sensing process |
05/07/1998 | WO1998019350A1 Composite memory material comprising a mixture of phase-change memory material and dielectric material |
05/07/1998 | WO1998019343A1 Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements |
05/07/1998 | WO1998019337A1 Integrated circuits and methods for their fabrication |
05/07/1998 | DE19748847A1 Semiconductor component with multilayer composite structure |
05/07/1998 | DE19652325C1 Integrated semiconductor circuit with redundant capacitors |
05/07/1998 | DE19644972A1 Halbleiterspeicher Semiconductor memory |
05/07/1998 | DE19644479A1 Verfahren zum Erfassen eines optischen Signals A method of detecting an optical signal |
05/07/1998 | DE19643185A1 Speicherzelle und Verfahren zur Herstellung einer nichtflüchtigen Speicherzelle Memory cell and method for manufacturing a non-volatile memory cell |
05/07/1998 | CA2269856A1 Composite memory material comprising a mixture of phase-change memory material and dielectric material |
05/06/1998 | EP0840502A2 Compact digital camera with segmented fields of view |
05/06/1998 | EP0840381A2 Thin-film semiconductor device and its manufacturing method and apparatus and thin-film semiconductor solar cell module and its manufacturing method |
05/06/1998 | EP0840378A1 Read-only memory and manufacturing method in MOS-technology |
05/06/1998 | EP0840377A1 Semiconductor device using diode place-holders and method of manufacture thereof |
05/06/1998 | EP0840371A2 Method for manufacturing a semiconductor memory device |
05/06/1998 | EP0840325A2 Improvements in or relating to memory devices |
05/06/1998 | EP0840323A2 Static semiconductor memory device with precharging circuits having similar configuration of memory cells |
05/06/1998 | EP0840227A1 Method and apparatus for determining IDDQ |
05/06/1998 | EP0840220A1 An integrated circuit device and method of communication therewith |
05/06/1998 | EP0840206A1 Threshold logic circuits with limited area |
05/06/1998 | EP0840198A2 Method and apparatus for increasing computer memory capacity |
05/06/1998 | EP0839391A1 Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy |
05/06/1998 | EP0839390A1 Electrically erasable and programmable non-volatile storage location |
05/06/1998 | EP0839389A1 Integrated circuit |
05/06/1998 | EP0839387A1 Method for forming high resistance resistors for limiting cathode current in field emission displays |
05/06/1998 | EP0839356A2 Electronic book with multiple page displays |
05/06/1998 | EP0818055A4 Self-alignment technique for semiconductor devices |
05/06/1998 | CN2281001Y Low-noise photoelectric crystal array device |
05/06/1998 | CN1180931A Method for forming field region of semiconductor device |
05/06/1998 | CN1180930A Decision method for semiconductor integrated circuit whether or not qualified and semiconductor integrated circuit |
05/05/1998 | US5748872 Direct replacement cell fault tolerant architecture |
05/05/1998 | US5748641 Test circuit of semiconductor memory device having data scramble function |
05/05/1998 | US5748550 Multiple power line arrangement for a semiconductor memory device |
05/05/1998 | US5748547 High performance semiconductor memory devices having multiple dimension bit lines |