Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
06/1998
06/16/1998US5767563 Inductor formed at least partially in a substrate
06/16/1998US5767562 Dielectrically isolated power IC
06/16/1998US5767561 Integrated circuit device with isolated circuit elements
06/16/1998US5767560 Photoelectric conversion device and method of driving the same
06/16/1998US5767559 Thin film type photoelectric conversion device
06/16/1998US5767557 PMOSFETS having indium or gallium doped buried channels and n+polysilicon gates and CMOS devices fabricated therefrom
06/16/1998US5767554 Semiconductor integrated circuit device and process for fabricating the same
06/16/1998US5767553 Flat cell mask ROM having compact select transistor structure
06/16/1998US5767552 Structure for ESD protection in semiconductor chips
06/16/1998US5767551 Intergrated circuit combining high frequency bipolar and high power CMOS transistors
06/16/1998US5767550 Integrated zener diode overvoltage protection structures in power DMOS device applications
06/16/1998US5767549 Integrated circuit
06/16/1998US5767548 Semiconductor component with embedded fixed charges to provide increased high breakdown voltage
06/16/1998US5767546 Laternal power mosfet having metal strap layer to reduce distributed resistance
06/16/1998US5767545 Power mosfet having current detection means
06/16/1998US5767544 Semiconductor integrated circuit device
06/16/1998US5767542 Matching parasitic capacitances and characteristics of field effect transistors
06/16/1998US5767541 Semiconductor memory device with ferroelectric capacitor
06/16/1998US5767537 Capacitively triggered silicon controlled rectifier circuit
06/16/1998US5767529 Method of manufacturing a semiconductor
06/16/1998US5767507 Polarization sensitive photodetectors and detector arrays
06/16/1998US5767012 Forming conductors on substrate, forming dielectric, forming trench, planarizing conductive material, etching, forming second dielectric layer
06/16/1998US5767003 Thin film semiconductor device manufacturing method
06/16/1998US5767001 Process for producing semiconductor components between which contact is made vertically
06/16/1998US5766999 Method for making self-aligned bipolar transistor
06/16/1998US5766996 Forming multilayer structure on substrate, coating with oxidation resistant layer, forming oxide layer
06/16/1998US5766995 Method for forming a DRAM cell with a ragged polysilicon crown-shaped capacitor
06/16/1998US5766994 Dynamic random access memory fabrication method having stacked capacitors with increased capacitance
06/16/1998US5766992 Forming field oxide regions, insulator layer, polysilicon layer, doping, depositing silicon nitride, patterning, etching
06/16/1998US5766991 CMOS process utilizing disposable silicon nitride spacers for making lightly doped drain
06/16/1998US5766990 Method of manufacturing a high speed bipolar transistor in a CMOS process
06/16/1998US5766988 Fabricating method for a thin film transistor with a negatively sloped gate
06/16/1998US5766984 Method of making a vertical integrated circuit
06/16/1998US5766977 Generating a hydrogen active material by reacting heated nickel and hydrogen gas, annealing
06/16/1998US5766970 Method of manufacturing a twin well semiconductor device with improved planarity
06/16/1998US5766965 Forming isolation region, gate electrodes, insulating film, doping, forming source and drain regions, forming metal silicide films
06/16/1998US5765279 For microelectronic devices
06/11/1998WO1998025410A1 Electro-optical imaging array and camera system with pitch rate image motion compensation
06/11/1998WO1998025307A1 Semiconductor device
06/11/1998WO1998025304A1 Semiconductor device
06/11/1998WO1998025263A1 Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas
06/11/1998WO1998025090A1 Spherical shaped semiconductor integrated circuit
06/10/1998EP0847091A2 Low voltage eeprom/nvram transistors and making method
06/10/1998EP0847089A1 Method and device for suppressing parasitic effects in a junction-insulated integrated circuit
06/10/1998EP0847083A2 A method for manufacturing a capacitor for a semiconductor device
06/10/1998EP0847081A1 Improvements in or relating to semiconductor devices
06/10/1998EP0847080A1 Improvements in or relating to semiconductor devices
06/10/1998EP0847059A2 Semiconductor memory
06/10/1998EP0847010A2 Row redundancy block architecture
06/10/1998EP0846998A2 Integrated circuit sensing and digitally biasing the threshold voltage of transistors and related methods
06/10/1998EP0846997A2 Integrated circuit actively biasing the threshold voltage of transistors and related methods
06/10/1998EP0846343A1 Electrically erasable memory elements characterized by reduced current and improved thermal stability
06/10/1998EP0846341A1 Metal insulator semiconductor structure with polarization-compatible buffer layer
06/10/1998EP0846340A1 Switched magnetic field sensitive field effect transistor device
06/10/1998EP0846339A1 Method of manufacturing a capacitor coupled contactless imager with high resolution and wide dynamic range
06/10/1998EP0846337A1 Self-aligned isolation and planarization process for memory array
06/10/1998EP0846325A1 Reduced area sense amplifier isolation layout in a dynamic ram architecture
06/10/1998EP0806109B1 Radiation sensor arrangement for detecting the frequency of radiation impinging thereon
06/10/1998EP0674806B1 Silicon on diamond circuit structure and method of making same
06/10/1998DE4143474C2 Semiconductor device with one or more FETs
06/10/1998DE19734908A1 Semiconductor memory with numerous pairs of bit lines
06/10/1998DE19721967A1 Memory component with base platelet and several types of applied unit platelets
06/10/1998DE19707977C1 Capacitor production especially for DRAM cell array
06/10/1998DE19650705A1 Contactless imaging method of radiometric or geometric properties of object or material for optical inspection of products
06/10/1998CN1184337A Semiconductor memory device and fabrication method thereof
06/10/1998CN1184336A Semi-conductor device
06/10/1998CN1184333A Memory device module
06/10/1998CN1184330A Semi-conductor memory device
06/10/1998CN1184317A Static semi-conductor memory device
06/10/1998CN1184316A Row redundancy block architecture
06/10/1998CN1184276A Single-chip system having electrostatic discharge (ESD) protective circuitry
06/09/1998US5764654 Semiconductor integrated circuit device having a test circuit
06/09/1998US5764585 Semiconductor memory device having main word lines and sub word lines
06/09/1998US5764567 Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
06/09/1998US5764563 Static random access memory cell
06/09/1998US5764562 Semiconductor memory device
06/09/1998US5764533 In a digital computer
06/09/1998US5764528 Delay optimizing method in logic circuit designing
06/09/1998US5764288 Analog processing element (APE) and related devices
06/09/1998US5764106 Gain-controlled amplifier and automatic gain control amplifier using GCLBT
06/09/1998US5763944 Semiconductor device having a reduced wiring area in and out of data path zone
06/09/1998US5763943 Electronic modules with integral sensor arrays
06/09/1998US5763937 Device reliability of MOS devices using silicon rich plasma oxide films
06/09/1998US5763935 Bipolar semiconductor device and fabricating method thereof
06/09/1998US5763934 Integrated electronic device with reduced parasitic currents, and corresponding methods
06/09/1998US5763931 Semiconductor device with SOI structure and fabrication method thereof
06/09/1998US5763929 Transistor package having a series connected thermistor for protection from thermal destruction
06/09/1998US5763926 Semiconductor device having a Bi-CMOS transistor including an n-channel MOS transistor
06/09/1998US5763925 ROM device having memory units arranged in three dimensions, and a method of making the same
06/09/1998US5763924 Circuits and methods for compensating non-linear capacitances to minimize harmonic distortion
06/09/1998US5763922 CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers
06/09/1998US5763921 Semiconductor device including retrograde well structure with suppressed substrate bias effects
06/09/1998US5763920 Semiconductor integrated circuit having bipolar and MOS transistors formed on a single semiconductor substrate
06/09/1998US5763919 In a semiconductor integrated circuit device
06/09/1998US5763918 Electrostatic discharge protection device
06/09/1998US5763916 Integrated circuit device
06/09/1998US5763913 Flash memory device with improved efficiency and reliability and method of making the same
06/09/1998US5763912 Depletion and enhancement MOSFETs with electrically trimmable threshold voltages
06/09/1998US5763909 Integrating imaging system with phototransistor having wide dynamic range
06/09/1998US5763908 Semiconductor memory device having an interconnect structure which improves yield