Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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05/01/1979 | US4152779 MOS ram cell having improved refresh time |
05/01/1979 | US4152486 Curie temperature, alloy of dysprosium and iron |
05/01/1979 | CA1053796A2 Column accessing of elements in confined arrays |
04/24/1979 | US4151611 Power supply control system for memory systems |
04/24/1979 | US4151610 High density semiconductor memory device formed in a well and having more than one capacitor |
04/24/1979 | US4151608 Circuit arrangement for suppressing magnetic induction noise due to an alternating magnetic field |
04/24/1979 | US4151607 Semiconductor memory device |
04/24/1979 | US4151606 Bloch-line memory system |
04/24/1979 | US4151605 Superconducting memory array configurations which avoid spurious half-select condition in unselected cells of the array |
04/24/1979 | US4151604 Image storage and optical read-out device having striped electrodes |
04/24/1979 | US4151601 Magnetic domain memory device with an improved detector |
04/24/1979 | US4151600 Magneto-resistive detector with scanning bubble domain |
04/24/1979 | US4151599 Magnetic bubble display units |
04/24/1979 | US4151429 Differential charge sensing circuit for MOS devices |
04/17/1979 | US4150441 Clocked static memory |
04/17/1979 | US4150440 Bubble memory package |
04/17/1979 | US4150392 Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors |
04/17/1979 | US4150311 Differential amplifier circuit |
04/17/1979 | US4150308 CMOS level shifter |
04/17/1979 | CA1052908A1 Semiconductor memory element operable at high speed and with low power consumption |
04/10/1979 | US4149270 Variable threshold device memory circuit having automatic refresh feature |
04/10/1979 | US4149268 Dual function memory |
04/10/1979 | US4149266 Discrimination of bubble state by bubble collapse |
04/10/1979 | US4149265 Method of improving the operation of a single wall domain memory system |
04/10/1979 | US4149099 Amplifier circuit for obtaining true and complementary output signals from an input signal |
04/10/1979 | US4149097 Waveform transition sensitive Josephson junction circuit having sense bus and logic applications |
04/03/1979 | US4148099 Memory device having a minimum number of pins |
04/03/1979 | US4147943 Sensitive high speed clocked comparator |
03/27/1979 | US4146930 Thermoplastic optical recording system |
03/27/1979 | US4146902 Irreversible semiconductor switching element and semiconductor memory device utilizing the same |
03/27/1979 | US4146802 Self latching buffer |
03/27/1979 | CA1051548A1 Low power, fast rise time current driver for inductive load |
03/27/1979 | CA1051525A1 Signal delay means using bucket brigade and sample-and-hold circuits |
03/20/1979 | US4145761 Ram retention during power up and power down |
03/20/1979 | US4145760 Memory device having a reduced number of pins |
03/20/1979 | US4145750 Field access magnetic bubble memory device |
03/20/1979 | US4145622 Decoder circuit arrangement with MOS transistors |
03/20/1979 | CA1050862A1 Magnetic bubble devices and garnet films therefor |
03/13/1979 | US4144590 Intermediate output buffer circuit for semiconductor memory device |
03/13/1979 | US4144589 Precharged data line driver |
03/13/1979 | US4144586 Substrate-fed injection-coupled memory |
03/13/1979 | US4144582 Voice signal processing system |
03/08/1979 | WO1979000096A1 Optical memory with storage in three dimensions |
03/06/1979 | US4143286 Semiconductor memory device |
03/06/1979 | CA1050117A1 Sensing circuit for memory cells |
02/27/1979 | US4142250 Bubble translation switch using magnetic charged wall |
02/27/1979 | US4142249 Conductor-access, magnetic bubble memory |
02/27/1979 | US4142248 Asynchronous storage loop type bubble chip architecture |
02/27/1979 | US4142233 Refreshing system for dynamic memory |
02/27/1979 | US4142176 Series read only memory structure |
02/27/1979 | US4142132 Method and means for dynamic correction of electrostatic deflector for electron beam tube |
02/27/1979 | US4142113 Current pulse circuit for ferrite core memories |
02/27/1979 | US4142112 Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same |
02/27/1979 | US4142111 One-transistor fully static semiconductor memory cell |
02/27/1979 | CA1049655A1 Memory output circuit |
02/27/1979 | CA1049654A1 Enhancement mode limited mnos memory device |
02/20/1979 | US4141027 IGFET integrated circuit memory cell |
02/13/1979 | US4139911 High speed sense circuit for semiconductor memories |
02/13/1979 | US4139910 Charge coupled device memory with method of doubled storage capacity and independent of process parameters and temperature |
02/13/1979 | US4139908 Photovoltaic-ferroelectric data recorder |
02/13/1979 | US4139906 Switch for fault tolerant bubble domain memory systems |
02/13/1979 | US4139904 Bubble lattice files with selected access channel positioning |
02/13/1979 | US4139786 Static MOS memory cell using inverted N-channel field-effect transistor |
02/13/1979 | US4139785 Static memory cell with inverted field effect transistor |
02/13/1979 | CA1048645A1 Test technique for semiconductor memory array |
02/13/1979 | CA1048643A1 Core memory device with two branch, parallel, meandering sense line orientation |
02/07/1979 | EP0000472A1 High-density integrated semiconductor device comprising a diode-resistor structure |
02/06/1979 | US4138740 Memory system |
02/06/1979 | US4138739 Schottky bipolar two-port random-access memory |
02/06/1979 | US4138736 One level switch for magnetic bubble domain devices |
02/06/1979 | US4138530 Rare earth, iron, and manganese or ruthenium garnet |
02/06/1979 | CA1048153A1 High-density, high-speed random access read-writer memory |
02/06/1979 | CA1048152A1 Bubble lattice initialization |
02/06/1979 | CA1048151A1 Bubble domain in lattice buffer arrangement |
02/06/1979 | CA1048150A1 Column accessing of elements in confined arrays |
02/06/1979 | CA1048113A1 Analog waveform transducing circuit |
01/30/1979 | US4137563 Circuitry for reducing power dissipation in equipment which operates in synchronism with clock pulses |
01/30/1979 | US4137464 Charge-transfer binary search generating circuit |
01/30/1979 | CA1047646A1 Complementary storage element |
01/30/1979 | CA1047645A1 High-speed random access memory |
01/23/1979 | US4136401 Storage module |
01/23/1979 | US4136292 Voltage sensing circuit of differential input type |
01/23/1979 | US4136290 Josephson self gating and circuit and latch circuit |
01/23/1979 | CA1047164A1 Dynamic buffer circuit |
01/23/1979 | CA1047162A1 Mutually exclusive parallel-sided loop circuits |
01/16/1979 | US4135104 Regenerator circuit |
01/16/1979 | CA1046641A1 Switched capacitor non-volatile mnos random access memory cell |
01/16/1979 | CA1046640A1 Semiconductor arrangement, particularly a storage arrangement with field effect transistors, and method of operating the same |
01/16/1979 | CA1046637A1 Cmos flip flop memory element without crossover, and method of operation |
01/16/1979 | CA1046635A1 Disk generator |
01/09/1979 | US4134151 Single sense line memory cell |
01/09/1979 | US4134150 Random access monostable memory cell having both static and dynamic operating modes |
01/09/1979 | US4134066 Wafer indexing system using a grid pattern and coding and orientation marks in each grid cell |
01/09/1979 | US4134033 Fast-switching digital differential amplifier system for CCD arrangements |
01/09/1979 | US4133611 Two-page interweaved random access memory configuration |
01/09/1979 | CA1046162A1 Method of operating a storage tube |
01/02/1979 | US4133051 Information refreshing system in a semiconductor memory |
01/02/1979 | US4133050 Early noise pulse and long duration, stabilized switching pulse |
01/02/1979 | US4133049 Memory circuit arrangement utilizing one-transistor-per-bit memory cells |
01/02/1979 | US4133048 Integrated semiconductor dynamic memory |