Patents for C30B 21 - Unidirectional solidification of eutectic materials (831)
09/2007
09/27/2007US20070221122 Method for Producing Silicon Carbide (Sic) Single Crystal and Silicon Carbide (Sic) Single Crystal Obtained By Such Method
09/27/2007US20070221121 Method of semiconductor nanocrystal synthesis
09/20/2007US20070215033 Method and apparatus for manufacturing group iii nitride crystals
09/18/2007US7270709 Method and apparatus of generating PDMAT precursor
08/2007
08/23/2007US20070193507 Radiation detector
08/22/2007CN101023026A Methods, devices and compositions for depositing and orienting nanostructures
08/16/2007US20070189956 Method for producing a monocrystalline cu(in,ga)se2powder, and mono-grain membrane solar cell containing said powder
08/16/2007US20070186845 Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same
08/02/2007US20070175383 Process for producing single crystal of gallium-containing nitride
07/2007
07/26/2007US20070169685 Methods and Apparatuses for Manufacturing Geometric Multicrystalline Cast Silicon and Geometric Multicrystalline Cast Silicon Bodies for Photovoltaics
07/26/2007US20070169684 Methods and Apparatuses for Manufacturing Monocrystalline Cast Silicon and Monocrystalline Cast Silicon Bodies for Photovoltaics
07/26/2007US20070169683 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
07/25/2007CN101006008A Systems and methods for manufacturing granular material, and for measuring and reducing dust in granular material
07/24/2007US7247202 Process for the conversion of a fluid phase substrate by dynamic heterogeneous contact with a solid agent
07/19/2007US20070163487 A method for producing a single crystal and an apparatus for producing a single crystal
07/19/2007US20070163485 Single crystal and semiconductor wafer and apparatus and method for producing a single crystal
07/17/2007US7244309 Apparatus for pulling single crystal by CZ method
07/12/2007US20070157876 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
07/12/2007US20070157872 Hydrothermal growth of rhombohedral potassium fluoroberyllium borate crystals for use in laser and non-linear optical applications and devices
07/12/2007US20070157871 Single crystal semiconductor manufacturing apparatus and method
07/12/2007US20070157870 Silicon wafer, method for manufacturing the same and method for growing silicon single crystals
07/05/2007US20070151505 Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
06/2007
06/28/2007US20070145373 Epitaxial imprinting
06/27/2007EP1600043A4 Analytical furnace with predictive temperature control
06/26/2007US7235133 Method for growing single crystal of semiconductor
06/26/2007US7235129 Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof
06/21/2007US20070141741 Semiconductor laminated structure and method of manufacturing nitirde semiconductor crystal substrate and nitirde semiconductor device
06/14/2007US20070131158 Method for manufacturing single crystal semiconductor
06/12/2007US7228658 Method of attaching an end seal to manufactured seeds
05/2007
05/31/2007US20070119366 Section forming method & construction for wafer ingot growth
05/31/2007US20070119365 Silicon single crystal pulling method
05/24/2007US20070113777 CaF2 single crystals with increased laser resistance, method for their preparation and use thereof
05/18/2007WO2005084225A3 System for continuous growing of monocrystalline silicon
05/18/2007WO2005030636A3 Methods, devices and compositions for depositing and orienting nanostructures
05/10/2007US20070101927 Silicon based optical waveguide structures and methods of manufacture
05/10/2007US20070101926 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer
05/03/2007US20070095277 Heat exchange having adsorbing core for use in refrigerating system
05/03/2007US20070095275 Method for manufacturing silicon single crystal
05/01/2007US7211146 Powder metallurgy crucible for aluminum nitride crystal growth
04/2007
04/26/2007US20070089667 Method for manufacturing a thermal interface material
04/26/2007US20070089666 Silicon semiconductor substrate and production method thereof
04/24/2007US7208043 Silicon semiconductor substrate and preparation thereof
04/19/2007US20070084400 Quartz glass crucible and method for treating surface of quartz glass crucible
04/19/2007US20070084399 Crystal growth apparatus and manufacturing method of group III nitride crystal
04/19/2007US20070084398 Monocrystalline diamond layer and method for the production thereof
04/19/2007US20070084397 Quartz glass crucible and method for treating surface of quartz glass crucible
04/17/2007US7204294 Casting method
04/12/2007US20070079750 Method of laser writing refractive index patterns in silicon photonic crystals
04/12/2007US20070079749 Method and apparatus for producing spherical silicon single-crystal
04/05/2007US20070077192 Tough diamonds and method of making thereof
04/05/2007US20070074654 Evaporation source machine and vaccum deposition apparatus using the same
04/05/2007US20070074653 Apparatus for preparation of silicon crystals with reduced metal content
04/04/2007EP1768927A2 Systems and methods for manufacturing granular material, and for measuring and reducing dust in granular material
04/04/2007CN1942610A Ultrahard diamonds and method of making thereof
04/03/2007US7198673 Optical lithography fluoride crystal annealing furnace
03/2007
03/29/2007US20070068448 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
03/29/2007US20070068447 Method of manufacturing silicon wafer
03/29/2007US20070068446 Compound semiconductor single crystal and production process thereof
03/28/2007CN1936113A Low defect density, ideal oxygen precipitating silicon
03/28/2007CN1936112A 低缺陷浓度的硅 A low defect density silicon
03/27/2007US7195671 Thermal shield
03/22/2007US20070062442 Apparatus for growing high quality silicon single crystal ingot and growing method using the same
03/15/2007US20070056505 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal
03/15/2007US20070056504 Method and apparatus to produce single crystal ingot of uniform axial resistivity
03/08/2007US20070051303 Semiconductor single crystal manufacturing apparatus
03/08/2007US20070051300 Synthesis of large homoepitaxial monocrystalline diamond
03/08/2007US20070051298 Method of searching for and generating high free energy forms
03/08/2007US20070051297 Silica glass crucible with barium-doped inner wall
03/08/2007US20070051296 Silica glass crucible with bubble-free and reduced bubble growth wall
03/01/2007US20070044711 Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal
03/01/2007US20070044709 Silicon Wafer Surface Defect Evaluation Method
03/01/2007US20070044708 Ultrasonic sensor assembly and method
02/2007
02/27/2007US7182810 Protein temperature evaporation-controlled crystallization device and method thereof
02/22/2007US20070039544 Method for casting polycrystalline silicon
02/15/2007US20070034251 Semiconductor elements having zones of reduced oxygen
02/15/2007US20070034143 Crystal growth apparatus and method of producing a crystal
02/15/2007US20070034141 Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals
02/15/2007US20070034140 Screening and Crystallization Plates for Manual and High-Throughput Protein Crystal Growth
02/15/2007US20070034138 Method for growing silicon single crystal and silicon wafer
02/08/2007US20070028832 Manufacturing method of hydrogen-doped silicon single crystal
02/07/2007EP1749123A2 System for continuous growing of monocrystalline silicon
02/01/2007US20070025895 Protein crystallography dialysis chamber that enables off-site high throughput cocktail screen
02/01/2007US20070022944 Method for Manufacturing Boride Single Crystal and Substrate
02/01/2007US20070022943 A Silicon Single Crystal Ingot and Wafer, Growing Apparatus and Method Therof
02/01/2007US20070022942 Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot
01/2007
01/25/2007US20070017437 Grown diamond mosaic separation
01/25/2007US20070017436 Process for growing silicon single crystal and process for producing silicon wafer
01/25/2007US20070017435 Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
01/25/2007US20070017434 Process for producing silicon single crystal
01/25/2007US20070017433 Process for producing single crystal and single crystal
01/18/2007US20070015069 mask includes multiple transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area; for laser illumination to convert amorphous silicon into polysilicon
01/18/2007US20070012243 Crucible or related object holder and method of manufacture
01/18/2007US20070012239 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
01/18/2007US20070012238 Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
01/11/2007US20070006797 Lithium tantalate substrate and method for producing same
01/10/2007EP1440458B1 Method of semiconductor nanoparticle synthesis
01/04/2007US20070000431 Method of repairing a short defect and a method of fabricating a liquid crystal display device
01/04/2007US20070000430 Liquid crystal display device and fabrication method threof
01/04/2007US20070000429 Method for producing single crystal and single crystal
01/02/2007US7157067 Crystallization of a single crystal diamond grown by microwave plasma chemical vapor deposition; heat treatment; noncracking, nonfracturing; hardness
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