Patents for C30B 21 - Unidirectional solidification of eutectic materials (831)
03/2015
03/03/2015US8968469 Semiconductor device and method of manufacture thereof
02/2015
02/24/2015US8961687 Lattice matched crystalline substrates for cubic nitride semiconductor growth
01/2015
01/27/2015US8940094 Methods for fabricating a semiconductor wafer processing device
01/14/2015CN104278173A 一种高强高塑TiAl合金材料及其制备方法 A high strength and high plastic TiAl alloy material and method
01/13/2015US8932403 Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces
12/2014
12/23/2014US8916124 Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same
11/2014
11/25/2014US8894766 Process for production of polycrystalline silicon
11/18/2014US8888913 Method of manufacturing epitaxial silicon wafer and apparatus therefor
11/18/2014US8888912 Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal
11/11/2014US8882911 Apparatus for manufacturing silicon carbide single crystal
10/2014
10/21/2014US8864908 Crucible protection sheet and crucible apparatus using the crucible protection sheet
10/21/2014US8864906 Method for producing silicon wafer
10/07/2014US8852340 Method for manufacturing single crystal
09/2014
09/16/2014US8834628 Method of semiconductor nanocrystal synthesis
08/2014
08/12/2014US8801854 Method for evaluating metal contamination of silicon single crystal
08/07/2014WO2014118630A1 Cover flux and method for silicon purification
08/05/2014US8795822 Metal fluoride eutectic and neutron scintillator
08/05/2014US8795624 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
08/05/2014US8795431 Method for producing gallium nitride layer and seed crystal substrate used in same
07/2014
07/29/2014US8790460 Formation of silicon sheets by impinging fluid
07/08/2014US8771560 Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
07/08/2014US8771415 Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer
07/02/2014CN102784904B 一种判定定向凝固柱晶高温合金热裂倾向性的方法 A determination to hot cracking tendency of directional solidification method column crystal superalloy
07/01/2014US8764900 Apparatus and method for producing single crystals
06/2014
06/24/2014US8758510 Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course
06/24/2014US8758507 Germanium enriched silicon material for making solar cells
06/03/2014US8741060 System and method for liquid silicon containment
05/2014
05/27/2014US8734584 Systems and methods for creating crystallographic-orientation controlled poly-silicon films
05/20/2014US8728238 Crystal growth system and method for lead-contained compositions using batch auto-feeding
05/20/2014US8728234 Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
05/20/2014US8728232 Single crystal heat treatment method
05/06/2014US8715413 Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrate
04/2014
04/30/2014CN103757704A Preparation of nickel-base single-crystal high-temperature alloy through light floating zone melting directional solidification method
04/29/2014US8709156 Methods for producing epitaxially coated silicon wafers
04/15/2014US8696809 Manufacturing method of epitaxial silicon wafer and substrate cleaning apparatus
04/02/2014CN103700445A Ultrafine silver plated tin-indium alloy conductor and preparation method thereof
04/01/2014US8685165 Metal oxide films
04/01/2014CA2532384C Annealing single crystal chemical vapor deposition diamonds
03/2014
03/26/2014CN103668461A Method for preparing nickel-based superalloy Rene80 directionally-grown column crystal/single crystal alloy and manufacturing parts
03/25/2014US8679443 Method and apparatus for treating diamond using liquid metal saturated with carbon
02/2014
02/25/2014US8657957 Method and apparatus for manufacturing fused silica crucible, and the fused silica crucible
02/18/2014US8652253 Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
02/11/2014US8647435 HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
02/11/2014US8647433 Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same
02/04/2014US8642449 Silicon wafer
01/2014
01/22/2014CN102304768B Insulation barrel for crystal growing thermal field
12/2013
12/31/2013US8617312 Systems and methods for forming layers that contain niobium and/or tantalum
12/18/2013CN103451733A Niobate TmyHozBil-y-zNbO4 light emitting material and flux method crystal growth method thereof
12/18/2013CN103451732A Rare earth tantalite CrxTmyHozGd1-x-y-zTaO4 luminescent material
12/17/2013US8608848 Shaped nanocrystal particles and methods for making the same
12/03/2013US8597427 Method of manufacturing a semiconductor device
11/2013
11/26/2013US8591653 Compound semiconductor single-crystal manufacturing device and manufacturing method
11/26/2013US8591651 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby
11/12/2013US8580034 Low-temperature dielectric formation for devices with strained germanium-containing channels
11/12/2013US8580033 Method for producing a single crystal of semiconductor material
11/12/2013US8580032 Method for manufacturing single crystal
11/05/2013US8574525 Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
11/05/2013US8574362 Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot
10/2013
10/29/2013US8568531 Seed holder for crystal growth reactors
10/29/2013US8568529 HVPE chamber hardware
10/22/2013US8562768 Solid compounds, self-sustaining combustion hydrogen generators containing borazane and/or polyaminoborane and at least one inorganic oxidant, and method for generating hydrogen
10/01/2013US8547121 Quality control process for UMG-SI feedstock
10/01/2013US8545623 Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
09/2013
09/18/2013EP2639343A1 A method of manufacturing thin layers of eutectic composites
09/17/2013US8535442 Crystal growth system and method for lead-contained compositions using batch auto-feeding
09/11/2013EP2636647A1 Metal fluoride eutectic body and neutron scintillator
09/11/2013EP2636646A1 Metal fluoride eutectic, scintillator for neutrons, and neutron imaging device
08/2013
08/13/2013US8506706 Systems, methods and substrates of monocrystalline germanium crystal growth
08/06/2013US8500905 Kyropoulos sapphire single crystal growing apparatus using elliptic crucible
07/2013
07/17/2013CN103205802A System for continuous growing of monocrystalline silicon
07/02/2013US8475592 Method for producing a single crystal of semiconductor material
07/02/2013US8475589 Method for evaluating metal contamination of silicon single crystal
06/2013
06/18/2013US8465587 Modern hydride vapor-phase epitaxy system and methods
06/11/2013US8460463 Silicon wafer and method for producing the same
06/11/2013US8460462 Method and an apparatus for growing a silicon single crystal from a melt
05/2013
05/30/2013US20130133567 Systems and processes for continuous growing of ingots
05/28/2013US8449676 Silica glass crucible
05/28/2013US8449675 Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer
05/28/2013US8449674 System and method for liquid silicon containment
04/2013
04/30/2013US8430958 Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
04/23/2013US8425681 Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres
04/16/2013US8419853 Stacked semiconductor device and related method
04/02/2013US8409350 Gallium nitride crystal growth method, gallium nitride crystal substrate, epi-wafer manufacturing method, and epi-wafer
04/02/2013US8409347 Method of dopant injection, N-type silicon single-crystal, doping apparatus and pull-up device
03/2013
03/26/2013US8404045 Method for manufacturing group III nitride single crystals
03/12/2013US8394196 Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
02/2013
02/26/2013US8382895 Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program
02/19/2013US8377205 Apparatus for producing silicon nanocrystals using inductively coupled plasma
02/12/2013US8372199 Bulk GaN and AlGaN single crystals
02/12/2013US8372198 Methods of forming dual damascene structures
02/12/2013US8372196 Susceptor device, manufacturing apparatus of epitaxial wafer, and manufacturing method of epitaxial wafer
01/2013
01/29/2013US8361227 Silicon carbide single crystals with low boron content
01/29/2013US8361226 III-nitride single-crystal growth method
01/29/2013US8361222 Method for producing group III nitride-based compound semiconductor
01/08/2013US8349080 Micro-manipulator machine for harvesting and cryofreezing crystals
01/08/2013US8349075 2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor
12/2012
12/25/2012US8337615 Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer
12/19/2012CN102174707B Cold crucible for directional solidification of magnetic AlNiCo alloy
11/2012
11/28/2012CN102797032A Method and apparatus for growing semiconductor crystals with rigid support, carbon doping and resistivity control and thermal gradient control
11/27/2012US8317919 System for continuous growing of monocrystalline silicon
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