Patents for C30B 21 - Unidirectional solidification of eutectic materials (831)
07/2010
07/13/2010US7754180 Ultrahard diamonds and method of making thereof
07/06/2010US7749865 Method for producing semiconductor wafers and a system for determining a cut position in a semiconductor ingot
07/06/2010US7749324 Casting method of silicon ingot and cutting method of the same
07/01/2010US20100162946 System for continuous growing of monocrystalline silicon
06/2010
06/09/2010CN1942610B Ultrahard diamonds and method of making thereof
06/09/2010CN101265607B Graphite heater for polycrystalline silicon casting ingot process
06/01/2010US7727334 Apparatus for pulling single crystal by CZ method
05/2010
05/20/2010WO2010025397A3 Directional solidification of silicon by electric induction susceptor heating in a controlled environment
05/11/2010US7713507 Tough diamonds and method of making thereof
05/06/2010US20100108530 Method of semiconductor nanocrystal synthesis
05/04/2010US7709540 Method for preparing organic ligand-capped titanium dioxide nanocrystals
05/04/2010US7708828 Dust-free and pore-free, high-purity granulated polysilicon
04/2010
04/27/2010US7704323 Metal-free silicon-molecule-nanotube testbed and memory device
04/06/2010US7691201 Method of forming three-dimensional nanocrystal array
04/06/2010US7691200 Magnesium oxide single crystal and method for producing the same
04/06/2010US7691199 Melter assembly and method for charging a crystal forming apparatus with molten source material
03/2010
03/30/2010US7686888 Cooling system for chamber of ingot growth arrangement
03/30/2010US7686885 Patterned nanorod arrays and methods of making same
03/25/2010US20100075468 Methods, devices and compositions for depositing and orienting nanostructures
03/24/2010EP2166133A1 Metal casting
03/24/2010CN100595351C Interstitial atoms based silicon with low defect density
03/23/2010US7682450 Stacked semiconductor device and related method
03/16/2010US7678194 Method for providing gas to a processing chamber
03/09/2010US7674335 Method of producing high quality relaxed silicon germanium layers
03/04/2010WO2010025397A2 Directional solidification of silicon by electric induction susceptor heating in a controlled environment
01/2010
01/26/2010US7651931 Laser beam projection mask, and laser beam machining method and laser beam machine using same
01/12/2010US7645339 Silicon-containing layer deposition with silicon compounds
01/05/2010US7641733 Method and apparatus for growth of multi-component single crystals
12/2009
12/30/2009WO2009102978A3 Ac field induced biomolecule crystallization and hydration cage disruption
12/22/2009US7635414 System for continuous growing of monocrystalline silicon
12/22/2009US7635412 Crystallizing silicon using a laser beam transmitted through a mask
12/08/2009US7628855 Atomic layer deposition using electron bombardment
12/01/2009US7625448 Inlet system for an MOCVD reactor
11/2009
11/24/2009US7621999 Method and apparatus for AlGan vapor phase growth
11/17/2009US7618492 Methods of forming nanocrystals
11/10/2009US7615116 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
11/03/2009US7611578 Processes of forming small diameter rods and tubes
10/2009
10/20/2009US7604697 Heteroepitaxial growth method for gallium nitride
10/07/2009CN100547122C Vacancy-dominated, defect-free silicon
10/06/2009US7597757 ZnO film with C-axis orientation
09/2009
09/22/2009US7591897 Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures
09/22/2009US7591896 Hydrothermal growth of hexagonal beryllium borate crystals for use in laser non-linear optical and birefringent applications and devices
09/17/2009US20090233396 Floating sheet production apparatus and method
08/2009
08/26/2009EP2092093A2 Method for growing group iii-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group iii-nitride crystals grown thereby
07/2009
07/29/2009CN100519831C Annealing single crystal chemical vapor depositon diamonds
07/09/2009US20090173272 Apparatus for pulling single crystal by CZ method
06/2009
06/02/2009US7540920 Silicon-containing layer deposition with silicon compounds
05/2009
05/12/2009US7531036 Single crystal heat treatment method
05/06/2009EP1600043B1 Analytical furnace with predictive temperature control
04/2009
04/30/2009WO2007067541A3 Systems and methods for processing a film, and thin films
04/28/2009US7524374 Method and apparatus for generating a precursor for a semiconductor processing system
04/15/2009CN101407936A Method and apparatus for growing semiconductor crystals and crystal product and device support method
04/09/2009DE102004040053B4 Verfahren zur Herstellung eines Siliciumeinkristalls A process for producing a silicon single
02/2009
02/18/2009CN101368291A Production method for polysilicon slice
01/2009
01/27/2009US7482552 Laser crystallizing device and method for crystallizing silicon
12/2008
12/18/2008US20080311021 Apparatus for pulling single crystal by CZ method
12/18/2008US20080311019 Apparatus for pulling single crystal by CZ method
12/16/2008US7465351 Melter assembly and method for charging a crystal forming apparatus with molten source material
11/2008
11/04/2008US7445671 Formation of metal oxide nanowire networks (nanowebs) of low-melting metals
10/2008
10/16/2008WO2008092097A3 Multi-beam optical afterheater for laser heated pedstal growth
10/02/2008US20080241049 A single crystal diamond grown by microwave plasma chemical vapor deposition, annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa; enhanced optical characteristics
09/2008
09/17/2008CN101265607A Graphite heater for polycrystalline silicon casting ingot process
09/10/2008CN100418246C Doped organic semiconductor materials and process for their preparation
08/2008
08/20/2008EP1456866A4 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
07/2008
07/30/2008CN100406160C Method for producing magnetically active shape memory metal alloy
07/29/2008US7404670 Analytical furnace with predictive temperature control
07/22/2008US7402207 Method and apparatus for controlling the thickness of a selective epitaxial growth layer
07/16/2008EP1945003A1 Directional solidification of a metal
07/16/2008CN100402421C Tough diamonds and method of making thereof
07/15/2008US7399356 Method for preparation of ferroelectric single crystal film structure using deposition method
07/08/2008US7396407 Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates
07/08/2008US7396405 Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystal
07/03/2008WO2008054415A3 Method for synthesizing ultrahigh-purity silicon carbide
06/2008
06/12/2008WO2008051589A3 Method for growing group iii-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group iii-nitride crystals grown thereby
06/12/2008US20080134962 Crystallization method and crystallization apparatus
06/12/2008US20080134958 System For Continuous Growing of Monocrystalline Silicon
06/12/2008US20080134957 Powder metallurgy crucible for aluminum nitride crystal growth
06/03/2008CA2476840C Method of attaching an end seal to manufactured seeds
05/2008
05/29/2008WO2008063715A2 Crystal growth system and method for lead-contained compositions using batch auto-feeding
04/2008
04/29/2008US7364990 Epitaxial crystal growth process in the manufacturing of a semiconductor device
04/22/2008US7361219 Method for producing silicon wafer and silicon wafer
04/15/2008US7357963 Apparatus and method of crystallizing amorphous silicon
03/2008
03/18/2008US7344594 Melter assembly and method for charging a crystal forming apparatus with molten source material
02/2008
02/12/2008US7329317 Method for producing silicon wafer
01/2008
01/31/2008US20080023693 Methods, devices and compositions for depositing and orienting nanostructures
01/29/2008US7323052 Apparatus and method for the production of bulk silicon carbide single crystals
01/08/2008US7317237 Photovoltaic conversion device and method of manufacturing the device
12/2007
12/20/2007US20070290408 Annealing single crystal chemical vapor deposition diamonds
12/18/2007US7309477 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
12/06/2007US20070277728 Method for forming a semiconductor structure having a strained silicon layer
12/04/2007US7303628 Nanocrystals with linear and branched topology
11/2007
11/27/2007US7300858 Laser crystallization and selective patterning using multiple beamlets
11/21/2007CN101076618A System for continuous growing of monocrystalline silicon
11/14/2007CN101070621A Low defect density, self-interstitial dominated silicon
11/08/2007US20070256625 Apparatus for pulling single crystal by CZ method
11/06/2007US7291222 Systems and methods for measuring and reducing dust in granular material
10/2007
10/18/2007WO2006113539A3 Semiconductor devices having gallium nitride epilayers on diamond substrates
10/18/2007US20070241323 Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates
10/09/2007US7279041 Atomic layer deposition methods and atomic layer deposition tools
10/04/2007US20070227439 Method for manufacturing defect-free silicon single crystal
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