Patents
Patents for B82Y 10 - Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic (1,512)
08/2004
08/12/2004US20040155250 Nitride compound semiconductor element
08/10/2004US6774389 Optical semiconductor device
07/2004
07/15/2004US20040137338 includes closely contacting, to a workpiece, a mask having an opening formed with lengthwise directions extending in orthogonal directions, and projecting onto the mask, exposure light being polarized in another direction
07/07/2004EP1435091A1 Magnetic material structures, devices and methods
07/06/2004US6759139 Nitride-based semiconductor element and method of forming nitride-based semiconductor
07/01/2004US20040127047 Polishing composition and polishing method using the same
06/2004
06/24/2004WO2004053968A1 Slurry composition for secondary polishing of silicon wafer
06/24/2004US20040121245 Exposure method, exposure mask, and exposure apparatus
06/23/2004EP1430552A1 Molecular memory and method for making same
06/10/2004US20040108500 Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same
05/2004
05/26/2004EP1421594A1 Electron emitting device and method of manufacturing the same and display apparatus using the same
05/19/2004CN1497743A Device with nitrides system heterogenous structure and its manufacturing method
04/2004
04/29/2004US20040080732 Near-field photomask, near-field exposure apparatus using the photomask, dot pattern forming method using the exposure apparatus, and device manufactured using the method
04/21/2004EP1409156A2 Methods of nanotube films and articles
04/13/2004US6719819 Polishing composition
03/2004
03/31/2004EP1403910A2 Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same
03/31/2004EP1403351A1 Polishing composition and polishing method using the same
03/25/2004US20040056259 Electrical and electronic apparatus comoprising multilayer nitrides of gallium, indium and aluminum, used as lasers, light emitting diodes or quantum wells having durability
03/25/2004CA2441877A1 Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same
03/18/2004WO2004023211A2 Exposure method, exposure mask, and exposure apparatus
03/18/2004US20040050816 Forming pattern using graft polymer containing metal particles; overcoating substrates; removal polymer
03/09/2004US6703645 Spin filter
01/2004
01/21/2004EP1383158A2 Charged-particle beam lens
01/02/2004EP1373978A2 Extreme ultraviolet mask with improved absorber
01/01/2004US20040001964 Method of manufacturing a structure having pores
12/2003
12/17/2003EP1370489A1 Composite materials comprising polar polymers and single-wall carbon naotubes
12/04/2003US20030222048 Method for manufacturing porous structure and method for forming pattern
11/2003
11/25/2003US6653267 Compound having a heterocycle (preferably quinaldic acid, benzotriazole or benzimidazole), surfactant and an oxidizing agent
11/05/2003EP1359122A2 Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for preparing the same
11/05/2003EP1358669A2 Dynamic memory based on single electron storage
10/2003
10/28/2003US6639254 Epitaxial layer capable of exceeding critical thickness
10/08/2003EP1350277A2 System and method for electrically induced breakdown of nanostructures
09/2003
09/17/2003CN1442935A Semi conductor laser device and optical disk regenerating and recording apparatus
08/2003
08/26/2003US6610463 Method of manufacturing structure having pores
08/06/2003CN1434846A Polishing composition
07/2003
07/24/2003US20030138001 Semiconductor laser device and optical disk reproducing and recording apparatus
07/23/2003EP1329953A1 Carbon nanotube thermal interface structures
07/17/2003US20030132431 Including an active layer of a quantum well structure having a plurality of quantum well layers and barrier layers in which each of the quantum well layers is doped with a p-type impurity
07/10/2003US20030129779 Optical semiconductor device and method for fabricating the same
07/03/2003US20030124850 Polishing slurry for use in CMPof SiC series compound, polishing method, and method of manufacturing semiconductor device
07/03/2003US20030122148 Spin filter
07/02/2003EP1323671A1 Process for the fabrication of at least one nanotube between two electrically conductive elements and device for carrying out this process
06/2003
06/19/2003US20030110711 Polishing composition
06/03/2003US6574092 Carbonaceous material, polarizable electrode for electrical double-layer capacitor, and electrical double-layer capacitor
05/2003
05/20/2003US6565763 Method for manufacturing porous structure and method for forming pattern
05/07/2003EP1307931A2 Memory element and method for production of a memory element
04/2003
04/10/2003WO2003029354A1 Organic semiconductor material and organic semiconductor element employing the same
03/2003
03/19/2003CN1404192A Method for forming third main group nitride semiconductor layer and semiconductor device
03/12/2003EP1291891A2 Electron-emiting device, electron source, image forming apparatus, and method of manufacturing electron-emitting device and electron source
03/06/2003US20030042496 Forming nitrides; etching
03/05/2003EP1287088A1 Polishing composition
02/2003
02/25/2003US6525337 Light and/or electron element
01/2003
01/09/2003US20030006409 Nitride compound semiconductor element
11/2002
11/06/2002EP1255261A1 Carbonaceous material, polarizable electrode for electrical double-layer capacitor, and electrical double-layer capacitor
10/2002
10/30/2002EP1253651A2 Semiconductor memory device using magneto resistive effect element
10/30/2002EP1253614A1 Cathode for emitting photoelectron or secondary electron, photomultiplier tube, and electron-multiplier tube
10/23/2002EP1251383A2 Near-field light-generating element, near-field optical recording device, and near-field optical microscope
10/02/2002EP1245029A1 Spin dependent tunneling memory
09/2002
09/12/2002US20020127856 Nitride-based semiconductor element and method of forming nitride-based semiconductor
09/12/2002US20020126439 Polarizable electrode for electrical double-layer capacitor, and electrical double -layer capacitor
08/2002
08/21/2002EP1232504A1 Method of manufacturing a spin valve structure
08/15/2002US20020110945 Optical semiconductor device having an epitaxial layer of iii-v compound semiconductor material containing n as a group v element
07/2002
07/11/2002WO2002054549A1 Semiconductor luminous element and method for manufacture thereof, and semiconductor device and method for manufacture thereof
06/2002
06/04/2002US6398827 Stable aqueous spherical moniliform colloidal silica bonded with metal oxide; monoplanar; iron oxide or inorganic salt accelerator; alumina disks; silica surfaces; semiconductorwafers
05/2002
05/15/2002CN1349234A Carbon material, dual layer capacitor polarizable electrode
04/2002
04/18/2002US20020043209 Method of fabricating compound semiconductor device
04/17/2002EP1198043A2 Method of fabricating a III-V compound semiconductor device with an Aluminium-compound layer
04/16/2002CA2358776A1 Carbonaceous material, polarizable electrode for electrical double-layer capacitor, and electrical double-layer capacitor
04/06/2002CA2358006A1 Method of fabricating compound semiconductor device
02/2002
02/07/2002US20020016275 Aqueous dispersion for chemical mechanical polishing used for polishing of copper
01/2002
01/02/2002EP1167482A2 Aqueous dispersion for chemical mechanical polishing used for polishing of copper
11/2001
11/28/2001EP1157431A1 A hybrid electrical device with biological components
11/15/2001WO2001085868A1 Polishing composition
10/2001
10/16/2001US6303277 Pattern forming method and method of manufacturing device having fine pattern
08/2001
08/09/2001US20010011733 Epitaxial layer capable of exceeding critical thickness
07/2001
07/04/2001EP1113542A1 Light and/or electron element
05/2001
05/01/2001US6224667 Method for fabricating semiconductor light integrated circuit
01/2001
01/11/2001WO2001003263A1 Light and/or electron element
01/03/2001EP1065251A1 Polishing composition
04/2000
04/04/2000US6046096 Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure
03/2000
03/14/2000US6036771 Method of manufacturing optical semiconductor device
09/1999
09/14/1999US5951724 Fine particulate polishing agent, method for producing the same and method for producing semiconductor devices
08/1999
08/10/1999US5937118 Quantum synthesizer, THz electromagnetic wave generation device, optical modulation device, and electron wave modulation device
06/1999
06/01/1999CA2139140C A method for fabricating a semiconductor photonic integrated circuit
04/1999
04/07/1999CN1213197A Method of manufacturing optical semiconductor device
03/1999
03/31/1999EP0905798A2 Method of manufacturing optical semiconductor device
12/1998
12/08/1998US5848085 Semiconductor quantum well structure and semiconductor device using the same
11/1998
11/24/1998US5841156 Quantum well laser, transistor; improved lattice constant
10/1998
10/28/1998EP0874036A1 Fine particulate polishing agent, method for producing the same and method for producing semiconductor devices.
06/1998
06/16/1998US5766279 Mixed oxides
04/1998
04/01/1998EP0833395A2 Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure
01/1998
01/13/1998US5707845 Organic electronic element from modified cytochrome c551 and cytochrome c552
12/1997
12/17/1997EP0812434A2 Microcontact printing on surfaces and derivative articles
08/1997
08/05/1997US5654814 Optical semiconductor apparatus and optical communication system using the apparatus
02/1997
02/25/1997US5606176 Strained quantum well structure having variable polarization dependence and optical device including the strained quantum well structure
07/1996
07/10/1996EP0721241A2 Semiconductor quantum well structure and semiconductor device using the same
03/1996
03/19/1996US5500389 Process for formation for hetero junction structured film utilizing V grooves
12/1995
12/05/1995US5473173 Quantum well structure having differentially strained quantum well layers
07/1995
07/05/1995EP0661783A1 Method for fabricating semiconductor light integrated circuit
07/04/1995US5430309 Data processing system formed of a collective element of quantum boxes and method of operation thereof
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