Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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03/22/1994 | US5296782 Front mask of display device and manufacturing method thereof |
03/22/1994 | US5296724 Light emitting semiconductor device having an optical element |
03/22/1994 | US5296718 Zinc sulfide selenide and zinc cadmium selenide crystals in laminates |
03/22/1994 | US5296717 Multilayer diodes with buffer layers, cladding layers and active layers with aluminum, gallium arsenic and phosphorous |
03/17/1994 | WO1994006156A1 Monolithic multi-color light emission/detection device |
03/17/1994 | WO1994006154A1 Method for thermally coupling a heat sink to a lead frame |
03/17/1994 | DE4231007A1 Luminescent diode - comprises transparent semiconductor chip having front side with reflection reducing layer and metallised reverse layer |
03/16/1994 | EP0587277A1 Method for producing a semiconductor light emitting device |
03/16/1994 | EP0587091A1 Method of inspecting wafers for manufacturing light emitting elements |
03/16/1994 | CN1083991A Indium-gallic-arsenious photoelectric detector |
03/15/1994 | US5295148 Surface emission type semiconductor laser |
03/15/1994 | US5295145 Power supply with multi-parameter control |
03/15/1994 | US5294833 Including a layer of a p-type zinc selenide or alloy and layers of zinc telluride selenide, mercury selenide and a conductor |
03/15/1994 | US5294815 Semiconductor light emitting device with terraced structure |
03/15/1994 | US5294807 Quantum effect device in which conduction between a plurality of quantum dots or wires is achieved by tunnel transition |
03/15/1994 | US5294564 Forming a thin monocrystalline layer with modulation or doping along a direction parallel to the confinement layers |
03/15/1994 | US5293896 Arrangement for measuring the level of liquified gases |
03/08/1994 | US5293441 Optical device capable of reliably fixing a substrate to a package |
03/08/1994 | US5293074 Ohmic contact to p-type ZnSe |
03/08/1994 | US5293050 Semiconductor quantum dot light emitting/detecting devices |
03/03/1994 | WO1994007344A1 Organic luminescent element and its substrate |
03/03/1994 | DE4228274A1 Device contacting process for high density connections - esp. for contacting LEDs on common silicon@ chip without use of bonding techniques |
03/02/1994 | EP0585186A2 Semiconductor insulation for optical devices |
03/02/1994 | EP0585084A1 Permanent metallic bonding method |
03/02/1994 | EP0585007A2 Optical subassembly with passive optical alignment |
03/02/1994 | EP0584777A1 Semiconductor device and process for producing the same |
03/02/1994 | EP0584599A1 Light-emitting diode |
03/02/1994 | EP0584236A1 Blue-green laser diode. |
03/01/1994 | US5291507 Group 2a-6 compound semiconductors |
03/01/1994 | US5291098 Light emitting device |
03/01/1994 | US5291057 Rectangular shaped laser diode and symmetrically inverted triangular shaped emitting and receiving photodiodes on the same substrate |
03/01/1994 | US5291039 LED head having heat radiating mount |
03/01/1994 | US5291038 Reflective type photointerrupter |
03/01/1994 | US5291037 Light-emitting device |
03/01/1994 | US5291033 Semiconductor light-emitting device having substantially planar surfaces |
03/01/1994 | US5290393 Crystal growth method for gallium nitride-based compound semiconductor |
02/24/1994 | DE4325331A1 Gallium arsenide phosphide epitaxial disc - having layer system of gallium arsenide phosphide and used to mfr. light emitting diodes |
02/22/1994 | US5289486 Semiconductor luminous element and superlattice structure |
02/22/1994 | US5289483 Semiconductor device having a mesa and method of manufacturing same |
02/22/1994 | US5289345 Opto-electronic device housing having self-healing elastomeric board mount with support pylons |
02/22/1994 | US5289112 Light-emitting diode array current power supply including switched cascode transistors |
02/22/1994 | US5289082 LED lamp |
02/22/1994 | US5289018 Light emitting device utilizing cavity quantum electrodynamics |
02/17/1994 | WO1993018428A3 Head-mounted display system |
02/16/1994 | EP0582986A2 Semiconductor device and method of manufacturing the same |
02/16/1994 | EP0582705A1 Molded ring integrated circuit package |
02/15/1994 | US5287372 Quasi-resonant diode drive current source |
02/15/1994 | US5287001 For direct heat transfer |
02/15/1994 | CA1326966C Semiconducting metal silicide radiation detectors |
02/09/1994 | EP0582078A1 Superluminescent edge emitting device |
02/08/1994 | WO1994003931A1 Nitride based semiconductor device and manufacture thereof |
02/08/1994 | US5285078 Light emitting element with employment of porous silicon and optical device utilizing light emitting element |
02/08/1994 | US5285076 Optoelectronic device, metal mold for manufacturing the device and manufacturing method of the device using the metal mold |
02/08/1994 | US5284791 Method of making tunable semiconductor laser |
02/08/1994 | US5284781 Method of forming light emitting diode by LPE |
02/08/1994 | CA2037013C Top-emitting surface emitting laser structures |
02/03/1994 | DE4225382A1 Producing boundary surface of III-V semiconductor material at 45 deg. w.r.t. grating plane - epitaxially growing semiconductor material in grating plane of crystal orientation and using mask to align at 45 deg. |
02/03/1994 | DE4225140A1 Light-emitting diode light source for traffic display - has colour filter in front of, and having pass=band corresp. to emission band of light source, for eliminating stray reflections of sunlight |
02/02/1994 | EP0580953A1 GaP light emitting device and method for fabricating the same |
02/02/1994 | EP0580618A1 Electroluminescent silicon device. |
02/01/1994 | US5283688 Optical amplifier having a semiconductor with a short switching time |
02/01/1994 | US5283425 Light emitting element array substrate with reflecting means |
02/01/1994 | US5283132 Organic electroluminescent device for white luminescence |
01/27/1994 | DE4324647A1 Thin-film solar cell comprising thin photoelectric conversion layer, carrier structure and contact electrode - uses less highly pure semiconductor material so reducing cell cost |
01/26/1994 | EP0580289A1 Photoelectric converter |
01/26/1994 | EP0580082A1 Optoelectronic device |
01/26/1994 | EP0579897A1 Light-emitting device of gallium nitride compound semiconductor |
01/25/1994 | US5282219 Semiconductor laser structure having a non-reflection film |
01/25/1994 | US5281830 Light-emitting semiconductor device using gallium nitride group compound |
01/21/1994 | CA2100949A1 Optoelectronic component |
01/19/1994 | CN1081027A Ii-vi laser diodes with quantum wells gorwn by atomic layer epitaxy and migration enhanced epitaxy |
01/19/1994 | CN1081026A Single quantum well ii-vi laser diode without cladding |
01/18/1994 | US5280389 Ball lens assembly |
01/18/1994 | US5280191 Lightwave packaging for pairs of optical devices having thermal dissipation means |
01/13/1994 | DE4221564A1 Solder connection method for joining e.g. LED chip and flat copper component - preheating solder, positioning chip, melting solder by short-term temp. increase and lowering chip into position before cooling |
01/11/1994 | US5278857 Light-emitter |
01/11/1994 | US5278856 Double hetero junction |
01/11/1994 | US5278433 Doped aluminum gallium nitride |
01/11/1994 | US5278432 Apparatus for providing radiant energy |
01/11/1994 | US5278094 Method of manufacturing a planar buried heterojunction laser |
01/11/1994 | CA2018502C Integrated semiconductor diode laser and photodiode structure |
01/06/1994 | WO1994000885A1 Light emitting device |
01/06/1994 | CA2139331A1 Light emitting device |
01/05/1994 | EP0577197A1 Optoelectronic device and method of manufacturing same |
01/05/1994 | EP0576566A1 A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
01/04/1994 | US5276756 High speed electro-optical signal translator |
01/04/1994 | US5276698 Semiconductor laser having an optical waveguide layer including an AlGaInP active layer |
01/04/1994 | US5275970 Method of forming bonding bumps by punching a metal ribbon |
01/04/1994 | US5275968 Etching to produce a transverse aperture transverse to and communicating with first aperture |
01/04/1994 | CA1325827C Light transmitting device utilizing indirect reflection |
12/29/1993 | EP0576105A2 P-side up double heterojunction AlGaAs light emitting diode |
12/29/1993 | EP0575666A1 Electro-optical head assembly |
12/28/1993 | US5274269 Ohmic contact for p-type group II-IV compound semiconductors |
12/28/1993 | US5274252 Linearizing emitted light intensity from a light-emitting device |
12/28/1993 | US5274248 Light-emitting device with II-VI compounds |
12/28/1993 | US5273933 Vapor phase growth method of forming film in process of manufacturing semiconductor device |
12/28/1993 | CA1325582C Process for doping crystals of wide band gap semiconductors |
12/23/1993 | WO1993025611A1 Inorganic fillers and organic matrix materials whose refractive index is adapted |
12/22/1993 | EP0574947A1 Light emitting device |
12/21/1993 | US5272362 Semiconductor light emitting device |