Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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07/12/1994 | US5329131 Opto-electronic coupler having improved moisture protective housing |
07/12/1994 | US5328854 Fabrication of electronic devices with an internal window |
07/12/1994 | US5328809 Forming a multilayer element from conjugated polymers with optical properties |
07/07/1994 | WO1994015434A1 Pixel, video display screen and power delivery |
07/07/1994 | WO1994015369A1 Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor |
07/07/1994 | WO1994015368A1 Multi-bloc copolymer based tunable light emitting diode, polymers suitable therefor and oligomers |
07/07/1994 | CA2152922A1 Multi-bloc copolymer based tunable light emitting diode, polymers suitable therefor and oligomers |
07/07/1994 | CA2112045A1 Lighting strip system |
07/06/1994 | EP0605117A1 Integer gain self-electrooptic effect device |
07/05/1994 | US5327070 Power supply circuit for driving a light emitting element |
07/05/1994 | CA1330576C Transient voltage suppression for electro-optic modules |
06/28/1994 | US5324965 Light emitting diode with electro-chemically etched porous silicon |
06/28/1994 | US5324964 Superluminescent surface light emitting device |
06/28/1994 | US5324963 Electroluminescent semiconductor device having chalcogenide layer and mixed crystal layer |
06/28/1994 | US5324962 Multi-color semiconductor light emitting device |
06/28/1994 | US5324936 Hybrid optical/electrical circuit module with thermal insulation |
06/28/1994 | CA2018976C Doping procedures for semiconductor devices |
06/22/1994 | EP0602725A2 Method of manufacturing an optoelectronic semiconductor device |
06/22/1994 | CN1025137C Growing method of associated high-resistance layer for buried heterojuction laser |
06/21/1994 | US5323084 Light emitting diode printhead |
06/21/1994 | US5323027 Light emitting device with double heterostructure |
06/21/1994 | US5322463 Process and apparatus for assembling a laser |
06/14/1994 | US5321713 Aluminum nitride buffer layer, alternating layers of aluminum gallium nitride and gallium nitride |
06/14/1994 | US5321712 Semiconductor light-emitting device having a cladding layer composed of an InGaAlp-based compound |
06/14/1994 | US5321305 LED manufacturing frame and method of using the same for manufacturing LEDs |
06/08/1994 | EP0600426A2 Apparatus with light-emitting element and method for producing it |
06/07/1994 | US5319658 Solid solution semiconductor laser element material and laser element |
06/07/1994 | US5319220 Silicon carbide semiconductor device |
06/07/1994 | US5319219 Efficiently generating high intensity beams of light at relatively low operating voltate |
06/07/1994 | US5319182 Optical information detecting apparatus |
06/07/1994 | US5318676 Photolithographic fabrication of luminescent images on porous silicon structures |
06/01/1994 | EP0599224A1 Light-emitting gallium nitride-based compound semiconductor device |
06/01/1994 | EP0598861A1 Method of fabrication optoelectronic components |
06/01/1994 | EP0598755A1 Process for the production of electroluminescent silicon features |
06/01/1994 | CN1024748C Light emitting diode for photosensor and photosensor using such light emitt |
05/31/1994 | US5317586 Buried layer III-V semiconductor devices with impurity induced layer disordering |
05/31/1994 | US5317584 Surface emission type semiconductor laser |
05/31/1994 | US5317448 Method for driving a laser amplifier with minimized distortion |
05/31/1994 | US5317236 Single crystal silicon arrayed devices for display panels |
05/31/1994 | US5317167 Semiconductor light-emitting device with InGaAlp |
05/31/1994 | US5316968 Method of making semiconductor surface emitting laser |
05/26/1994 | WO1994011929A2 Optoelectronic devices |
05/24/1994 | US5315272 Light emitting tunnel diode oscillator |
05/24/1994 | US5315104 Photodiode photodetector with adjustable active area |
05/24/1994 | US5313729 LED display unit |
05/19/1994 | DE4339184A1 Planar III-V semiconductor structure mfr. by vapour phase epitaxy - involves etching of epitaxial active layer prior to organic chemical vapour deposition of Gp.III and V elements for enclosure layer |
05/18/1994 | EP0597402A1 A GaP light emitting element substrate |
05/17/1994 | US5313078 Blue; brightness |
05/17/1994 | US5311931 Mist supercooling of a heated surface |
05/11/1994 | WO1994010755A1 Electronic component |
05/11/1994 | WO1994010600A1 Single crystal silicon tiles for display panels |
05/11/1994 | EP0596783A1 Signal lights with modular lighting elements for vehicle |
05/11/1994 | EP0596782A1 Modular unit for vehicle signal light |
05/11/1994 | EP0596613A2 Optical fibre coupling modules |
05/11/1994 | DE4336891A1 Blue light-emitting semiconductor diode contg. Gp.IIIA nitride layers - incorporates zinc-doped semi-insulating layer with impurity concn. of 10 to power 19 to 21 atoms per cubic centimetre |
05/10/1994 | US5311530 Semiconductor laser array |
05/10/1994 | US5311035 Thin film electroluminescence element |
05/10/1994 | US5311008 Semiconductor apparatus |
05/10/1994 | CA2000525C Grating-coupled surface-emitting superluminescent device |
05/10/1994 | CA1329416C Device for biostimulation of tissue and method for treatment of tissue |
05/05/1994 | DE4236644A1 Elektronisches Bauelement Electronic component |
05/04/1994 | CN2164115Y Luminescent diode indicator |
05/03/1994 | US5309472 Semiconductor device and a method for producing the same |
05/03/1994 | US5309468 Laser diode for producing an output optical beam in a direction substantially perpendicular to epitaxial layers |
05/03/1994 | US5309151 Current-supplying integrated circuit |
05/03/1994 | US5309001 Light-emitting diode having a surface electrode of a tree-like form |
04/27/1994 | EP0594212A1 An ohmic electrode, its fabricating method and a light emitting device |
04/27/1994 | CN1086046A Light source and technique for mounting light emitting diodes |
04/26/1994 | US5306662 Method of manufacturing P-type compound semiconductor |
04/20/1994 | EP0592746A1 Encapsulated light emitting diode and method for encapsulating the same |
04/19/1994 | US5304283 Process for producing a buried stripe semiconductor laser using dry etching for forming said stripe and laser obtained by this process |
04/14/1994 | WO1994008355A1 Method of producing p-doped layers, particularly in ii-vi semiconductors |
04/12/1994 | US5302839 Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon |
04/12/1994 | US5302778 Semiconductor insulation for optical devices |
04/06/1994 | EP0590870A2 Method of making a buried heterostructure laser |
04/06/1994 | EP0590649A1 A GaP light emitting element substrate and a method of manufacturing it |
04/06/1994 | EP0590336A1 Optoelectronic element with narrow beam angle |
04/06/1994 | EP0590232A1 Semiconductor laser array and mounting method |
04/05/1994 | US5301063 Method of producing LED lens array |
04/05/1994 | US5300806 Separation of diode array chips during fabrication thereof |
04/05/1994 | US5300792 Controlled impurity concentration in n-type epitaxial layer; prevents luminance reduction |
04/05/1994 | US5300791 Window layer of zinc sulfur selenide semiconductor material |
04/05/1994 | US5300788 Light emitting diode bars and arrays and method of making same |
04/05/1994 | US5300452 Local etching with plasma of silicon tetrachloride and argon to which methane is added; smooth surface |
03/31/1994 | DE4232644A1 Opto-electronic semiconductor element for LED, photodiode etc. - is enclosed in plastics, with semiconductor chip, associated head conductive strips, and centring element between them |
03/31/1994 | DE4232637A1 Light-emitting diode providing visible or IR light - with rear reflector behind semiconductor chip with lower elasticity modulus than chip carrier material |
03/31/1994 | DE4232504A1 Verfahren zur Herstellung von p-dotierten Schichten insbesondere in II-VI-Halbleitern A process for preparing p-doped layers in particular II-VI semiconductors |
03/30/1994 | EP0589524A2 Method of manufacturing an optoelectronic semiconductor device and optoelectronic semiconductor element suitable for use in such a method |
03/30/1994 | EP0589200A1 Semiconductor laser device and its production method |
03/29/1994 | US5299216 Cladding and active layers comprises mixed crystal of group three to five semiconductor materials |
03/29/1994 | US5299097 Electronic part mounting board and semiconductor device using the same |
03/29/1994 | US5299096 LED mounting holder and device for mounting LED using it |
03/29/1994 | US5298768 Leadless chip-type light emitting element |
03/29/1994 | US5298767 Multilayer, p-n type junction |
03/29/1994 | US5298735 Laser diode and photodetector circuit assembly |
03/24/1994 | DE4232587A1 Monolithic opto-coupler for data or energy transmission - has beam detectors arranged in monocrystalline silicon islands dielectrically isolated by inorganic amorphous silicon connection |
03/23/1994 | EP0588406A1 Method of manufacturing a block-shaped support body for a semiconductor component |
03/23/1994 | EP0588385A2 Recording/reproducing apparatus of optical card |
03/23/1994 | EP0588296A1 Method of production of a porous silicon device |
03/23/1994 | EP0588040A2 Light source and technique for mounting light emitting diodes |