Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
03/2008
03/27/2008WO2008035932A1 Iii-nitride based light-emitting diode structure with monolithically integrated sidewall deflectors and method thereof
03/27/2008WO2008035749A1 Method of manufacturing an optical element and a resin-sealed light emitting element and article so obtained
03/27/2008WO2008035694A1 Bulb-type led lamp and compact led lamp
03/27/2008WO2008035624A1 Backlight apparatus
03/27/2008WO2008035493A1 Illumination device, backlight device used for liquid crystal display apparatus and liquid crystal display apparatus
03/27/2008WO2008035447A1 Group iii nitride white light emitting diode
03/27/2008WO2008035283A2 Light emitting device with tension relaxation
03/27/2008WO2008035245A2 Multicolor illumination source having reduced cri variability and method
03/27/2008WO2008034823A1 Method of producing precision vertical and horizontal layers in a vertical semiconductor structure
03/27/2008WO2008034590A2 Sensor for examining a value document, and method for the production of said sensor
03/27/2008US20080076882 Heat-curable silicone composition and light emitting diode element using same
03/27/2008US20080076316 Methods of manufacturing semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
03/27/2008US20080076236 Method for forming silicon-germanium epitaxial layer
03/27/2008US20080076200 Method for Fabrication Group III Nitride Semiconductor
03/27/2008US20080076199 Semiconductor light generating device
03/27/2008US20080076198 Method of manufacturing light emitting diode package and white light source module
03/27/2008US20080074896 Light emitting module of vehicle headlamp
03/27/2008US20080074888 Light emitting diode having reflective member and method for making the same
03/27/2008US20080074886 Optical lens and light emitting device using the same
03/27/2008US20080074871 Thermally conductive led assembly
03/27/2008US20080074551 Electronic flash, electronic camera and light emitting head
03/27/2008US20080074032 Method for Fabricating Led Illumination Light Source and Led Illumination Light Source
03/27/2008US20080074029 Light emitting device and method of making the same
03/27/2008US20080073665 Modified Gold-Tin System With Increased Melting Temperature for Wafer Bonding
03/27/2008US20080073664 Semiconductor device and method of fabricating the same
03/27/2008US20080073663 Light emitting diode having a reflective film and method for making the same
03/27/2008US20080073662 Method of manufacturing high power light-emitting device package and structure thereof
03/27/2008US20080073661 Light emitting device and display device using the same
03/27/2008US20080073659 Semiconductor Light Emitting Device
03/27/2008US20080073658 Semiconductor body and semiconductor chip comprising a semiconductor body
03/27/2008US20080073657 Nitride semiconductor crystal with surface texture
03/27/2008US20080073656 Low temperature polysilicon thin film transistor
03/27/2008US20080073655 Optoelectronic semiconductor chip
03/27/2008US20080073616 two phosphor system having a blue phosphor and a yellow phosphor, wherein the long wavelength end of the blue phosphor is substantially the same wavelength as the short wavelength end of the yellow phosphor; yellow phosphor has the formula A2SiO4:Eu2+F and A= ca, ba,sr, zn, mg, cd and f2 is a dopant
03/27/2008DE202007015105U1 Verpackungsstruktur von LED-Chips mit hoher Lichtemissionsleistung The packaging structure of LED chips having high light emission power
03/27/2008DE202006017583U1 Beleuchtungsvorrichtung Lighting device
03/27/2008DE10220333B4 Strahlungsemittierendes Halbleiterbauelement mit einer Mehrzahl von Strukturelementen Radiation-emitting semiconductor component with a plurality of structural elements
03/27/2008DE102007039230A1 Verfahren zum Bilden von Gehäusen für lichtemittierende Halbleitervorrichtungen durch Spritzgießen eines flüssigen Kunststoffs und gegossene lichtemittierende Halbleitervorrichtungsstreifen A method of forming housings for semiconductor light emitting devices by injection of a liquid plastic and molded semiconductor light emitting device strip
03/27/2008DE102006054069A1 Method for production of opto-electronic component, involves initializing semiconductor layer sequence with active area, where active area is suitable to send electromagnetic radiation in operation
03/27/2008DE102006045271A1 Optical sending and receiving module for transmission of information by glass fibers, has optoelectronic element, prefabricated plastic housing and electrical contacts, which are integrated into base part
03/27/2008DE102006043404A1 Oberflächenmontierbares Gehäuse für einen Halbleiterchip Surface mount housing for a semiconductor chip
03/27/2008DE102006043400A1 Optoelektronischer Halbleiterchip The optoelectronic semiconductor chip
03/27/2008DE102006042061A1 Semiconductor-illuminant has semiconductor-diode which is illuminated by tension admission, and substrate which is permeable for light produced by semiconductor-diode
03/27/2008DE10120295B4 Gerät und Prozess zur Gasphasenbeschichtung Device and process for gas-phase coating
03/27/2008CA2627823A1 Group iii nitride white light emitting diode
03/26/2008EP1903619A1 Semiconductor heterostructure
03/26/2008EP1903618A1 Method for producing trialkyl gallium
03/26/2008EP1902497A1 Surface emitting optical devices
03/26/2008EP1902478A1 Optoelectronic components comprising adhesive
03/26/2008EP1803163B1 Optoelectronic component with a wireless contacting
03/26/2008EP1620524A4 Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
03/26/2008CN201041809Y Diode rack
03/26/2008CN201041808Y White lighting device
03/26/2008CN101151741A Flexible led array
03/26/2008CN101151740A Semiconductor light-emitting device and board mounted with semiconductor light emitting device
03/26/2008CN101151739A Led of side view type and the method for manufacturing the same
03/26/2008CN101151576A Backlight panel employing white light emitting diode having red phosphor and green phosphor
03/26/2008CN101151348A Oxynitride phosphors for use in lighting applications having improved color quality
03/26/2008CN101151346A Phosphor, phosphor sheet and manufacturing method of the same, and light emitting device using the phosphor
03/26/2008CN101150166A Semiconductor light emitting device, manufacturing method thereof, and light emitting device using the same
03/26/2008CN101150165A Semiconductor light emitting device and light emitting device
03/26/2008CN101150164A Light semiconductor device and manufacturing method thereof
03/26/2008CN101150163A LED chip and thermal sediment direct encapsulated heat radiation component and its making device and method
03/26/2008CN101150162A A white light LED and its making method
03/26/2008CN101150161A A making method for non coating film semiconductor extension slice
03/26/2008CN101150160A LED and its making method
03/26/2008CN101150159A LED and its lens body
03/26/2008CN101150158A LED and its making method
03/26/2008CN101150157A High heat conductive LED encapsulation structure
03/26/2008CN101150156A Lighting component and its making method
03/26/2008CN101150155A Crystal coating encapsulation structure of LED
03/26/2008CN101150154A Silicon base efficient equalized electron adulterated lighting part and its making method
03/26/2008CN101150153A A micron wave length THz radiation transmission chip and its making method
03/26/2008CN101150152A A making method for white LED chip
03/26/2008CN101150121A Flexible circuits having improved reliability and thermal dissipation
03/26/2008CN101150053A Nitride semiconductor base plate and its manufacturing method
03/26/2008CN101149532A Backlight unit and a display device possessing same
03/26/2008CN101149514A Light-emitting diode backlight module
03/26/2008CN101148586A Method for preparing white light fluorescent powder used for near ultraviolet LED
03/26/2008CN101148542A Heat-curable silicone composition and light emitting diode element using same
03/26/2008CN100377454C Semiconductor element and its manufacturing method
03/26/2008CN100377377C Manufacturing method for semiconductor light emitting device
03/26/2008CN100377376C LED reflection cover manufacturing method
03/26/2008CN100377375C Method of increasing brightness of LED
03/26/2008CN100377374C Method for fabricating lead wire rack of light emitting diode
03/26/2008CN100377373C Light-emitting diode and its manufacturing method
03/26/2008CN100377372C Light-emitting device having PNPN structure and light-emitting device array
03/26/2008CN100377371C Light-emitting diode
03/26/2008CN100377370C Luminous diode and surface light source device
03/26/2008CN100377369C Nitride semiconductor device
03/26/2008CN100377368C Method of the production of a semiconductor component made from GaN
03/26/2008CN100376979C Back light module assembly
03/26/2008CN100376978C Back light assembly
03/26/2008CN100376977C Area Light source
03/26/2008CN100376963C Backlight module assembly
03/25/2008USRE40163 Semiconductor light-emitting element
03/25/2008US7349163 High-heat-dissipation lighting module
03/25/2008US7348949 Method and apparatus for controlling an LED based light system
03/25/2008US7348946 Energy sensing light emitting diode display
03/25/2008US7348606 Nitride-based heterostructure devices
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