Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
01/2008
01/17/2008US20080012966 Image sensor device having improved noise suppression capability and a method for supressing noise in an image sensor device
01/17/2008US20080012965 Imaging apparatus having a function for estimating a dark current amount
01/17/2008US20080012800 Display device
01/17/2008US20080012151 Method and an Apparatus for Manufacturing an Electronic Thin-Film Component and an Electronic Thin-Film Component
01/17/2008US20080012147 Semiconductor device for preventing defective filling of interconnection and cracking of insulating film
01/17/2008US20080012139 Thin film transistor array panel and manufacturing method thereof
01/17/2008US20080012130 Semiconductor device, circuit substrate, electro-optic device and electronic appliance
01/17/2008US20080012091 Vertical lc tank device
01/17/2008US20080012089 Method of forming a schottky diode and structure therefor
01/17/2008US20080012088 Solid-state imaging device and method of manufacturing the same
01/17/2008US20080012086 Semiconductor device with a photoelectric converting portion and a light-shading means
01/17/2008US20080012082 Large area flat image sensor assembly
01/17/2008US20080012080 Non-volatile semiconductor memory device and method of manufacturing the same
01/17/2008US20080012078 Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
01/17/2008US20080012077 Semiconductor device
01/17/2008US20080012076 Display device, method for manufacturing thereof, and television device
01/17/2008US20080012075 Silicon-on-insulator semiconductor device
01/17/2008US20080012074 Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors
01/17/2008US20080012073 Test structure for determining characteristics of semiconductor alloys in soi transistors by x-ray diffraction
01/17/2008US20080012072 Soi device with charging protection and methods of making same
01/17/2008US20080012059 Semiconductor device and manufacturing method thereof
01/17/2008US20080012048 Semiconductor Device And Method For Manufacturing Same
01/17/2008US20080012046 Semiconductor device having pads for bonding and probing
01/17/2008US20080012044 On-chip structure for electrostatic discharge (esd) protection
01/17/2008US20080012019 Method and structure for forming self-aligned, dual stress liner for cmos devices
01/17/2008US20080012007 Addressable Transistor Chip For Conducting Assays
01/17/2008US20080012000 Method and apparatus for forming an integrated circuit electrode having a reduced contact area
01/17/2008US20080011999 Microelectronic Devices Using Sacrificial Layers and Structures Fabricated by Same
01/17/2008US20080011942 Cmos image sensor with photo diode gate
01/17/2008US20080011940 Remote control receiver device and ambient light photosensor device incorporated into a single composite assembly
01/17/2008US20080011937 Solid-state imaging element and solid-state imaging device
01/17/2008US20080011936 Imaging sensor having microlenses of different radii of curvature
01/17/2008DE19613642B4 Halbleitereinrichtung zum Verkleinern von Wirkungen eines Rauschens auf eine interne Schaltung Semiconductor device to Shrink effects of noise on an internal circuit
01/17/2008DE112005003421T5 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
01/17/2008DE10241158B4 Verfahren zum Herstellen einer SRAM-Halbleitervorrichtung mit rechteckigen Gateverdrahtungselementen A method of manufacturing a semiconductor device having SRAM rectangular gate wiring elements
01/17/2008DE102006032958A1 Vergrabene Bitleitung mit reduziertem Widerstand Buried bit line with reduced resistance
01/17/2008DE102006031539A1 Integrierter Halbleiterchip mit lateraler Wärmedämmung Integrated semiconductor chip with lateral thermal insulation
01/17/2008DE102006031538A1 Integrated semiconductor arrangement has third semiconductor tub or semiconductor area of conductivity type is formed in semiconductor tub separated from substrate, and is connected with electrode structure of power transistor
01/17/2008DE102006030257A1 Teststruktur zum Bestimmen der Eigenschaften von Halbleiterlegierungen in SOI-Transistoren mittels Röntgenbeugung Test structure for determining the properties of semiconductor alloys in SOI-transistors by means of X-ray diffraction
01/17/2008DE102006028543A1 Integrated bipolar complementary metal oxide semiconductor circuit fabrication comprises forming epitaxial layer including lower silicon-germanium sublayer having higher germanium concentration than upper silicon-germanium sublayer
01/17/2008CA2657672A1 Architectures and criteria for the design of high efficiency organic photovoltaic cells
01/16/2008EP1879233A1 Organic thin film transistor substrate and fabrication thereof
01/16/2008EP1879232A2 Low power phase change memory cell having different phase change materials
01/16/2008EP1879231A2 Photoelectric conversion device and image pickup system with photoelectric conversion device
01/16/2008EP1879230A1 Semiconductor device and manufacturing method of the same
01/16/2008EP1879229A1 Improved ESD protection circuit
01/16/2008EP1878215A2 Scanning imager employing multiple chips with staggered pixels
01/16/2008EP1878065A1 Phase change memory device
01/16/2008EP1878064A1 Method and structure for peltier-controlled phase change memory
01/16/2008EP1878055A1 Semiconductor device with an image sensor and method for the manufacture of such a device
01/16/2008EP1878054A2 Solar cell array with isotype-heterojunction diode
01/16/2008EP1878053A1 Stability oled materials and devices with improved stability
01/16/2008EP1878045A2 Bipolar transistor and method of fabricating the same
01/16/2008EP1654763A4 Complex laminated chip element
01/16/2008EP1476875B1 Mram without isolation devices
01/16/2008EP1451860B1 Cmos process with an integrated, high performance, silicide agglomeration fuse
01/16/2008EP1451759B1 Semiconductor device, card, methods of initializing, checking the authenticity and the identity thereof
01/16/2008CN201007901Y Scanning type LED display apparatus
01/16/2008CN101107843A Solid-state imaging device and method for driving same
01/16/2008CN101107780A A digital analog converter system
01/16/2008CN101107711A Electromechanical memory, electric circuit employing the same, and driving method of electromechanical memory
01/16/2008CN101107709A Electronic component protected against the attacks
01/16/2008CN101107704A Thin film transistor array devices
01/16/2008CN101107700A Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line
01/16/2008CN101107244A Organic compound, charge transport material and organic electroluminescent element containing the same
01/16/2008CN101106658A Image sensors and image sensing methods selecting photocurrent paths according to incident light
01/16/2008CN101106181A Organic light-emitting device
01/16/2008CN101106180A Image display system
01/16/2008CN101106177A Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices
01/16/2008CN101106175A Low power phase change memory cell having different phase change materials
01/16/2008CN101106174A Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
01/16/2008CN101106173A Method of forming a phase change material layer and a phase change memory device so formed
01/16/2008CN101106171A Non-volatile memory device including variable resistance material
01/16/2008CN101106170A Semiconductor device using magnetic domain wall movement
01/16/2008CN101106162A Thin-film transistor and image display device
01/16/2008CN101106161A Underlay material for GaN epitaxial growth and its making method
01/16/2008CN101106160A Vertical gate semiconductor device and method for manufacturing the same
01/16/2008CN101106159A Multi-grid electric crystal and its making method
01/16/2008CN101106157A Display device
01/16/2008CN101106156A Organic light emitting diode display and method for manufacturing thereof
01/16/2008CN101106155A Electroluminescent diplay
01/16/2008CN101106154A Self-luminous device and electric machine using the same
01/16/2008CN101106153A Field effect transistor, organic thin-film transistor and manufacturing method of organic transistor
01/16/2008CN101106152A Thermal isolation of phase change memory cells
01/16/2008CN101106151A Phase change memory with diode unit selective connection and its making method
01/16/2008CN101106150A Solid-state imaging device and method of manufacturing the same
01/16/2008CN101106149A Photoelectric conversion device and image pickup system with photoelectric conversion device
01/16/2008CN101106148A Solid-state image pickup device
01/16/2008CN101106147A Method and apparatus for increasing light absorption in an image sensor using energy conversion layer
01/16/2008CN101106146A MOS solid-state image pickup device and manufacturing method thereof
01/16/2008CN101106145A Image sensor and its making method
01/16/2008CN101106144A An image sensor and method for forming semiconductor part
01/16/2008CN101106143A Optical sensor and display panel with this part
01/16/2008CN101106142A Display substrate, method of manufacturing thereof and display apparatus having the same
01/16/2008CN101106141A Semiconductor-on-insulator (SOI) structure and its making method
01/16/2008CN101106140A Non-volatile memory devices including dummy word lines and related structures and methods
01/16/2008CN101106139A Nonvolatile memory having raised source and drain regions
01/16/2008CN101106138A Nonvolatile memory array having modified channel region interface
01/16/2008CN101106137A Operation method of nonvolatile memory having modified channel region interface
01/16/2008CN101106136A Nonvolatile memory unit IC and its making method