Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
01/2010
01/26/2010US7651903 CMOS image sensor and method for manufacturing the same
01/26/2010US7651881 Solid-state imaging device and method for manufacturing the same
01/26/2010US7651878 Wafer-level chip-scale package of image sensor and method of manufacturing the same
01/26/2010US7651745 Includes first plastic substrate including composite layer having resin-impregnated fiber fabric, an inorganic barrier layer formed on composite layer, a planarizing resin layer formed on inorganic barrier layer, and display medium layer formed on planarizing resin layer-side of first plastic substrate
01/26/2010US7651722 Shortening a cycle time of forming an organic layer of the display and suppressing wasteful consumption of organic materials used for forming the layer.
01/26/2010CA2520972C Cmos-compatible integration of silicon-based optical devices with electronic devices
01/21/2010WO2010009364A1 Carbon-based resistivity-switching materials and methods of forming the same
01/21/2010WO2010008892A1 Microelectronic imager packages with covers having non-planar surface features
01/21/2010WO2010008877A1 Stripper solutions effective for back-end-of line operations
01/21/2010WO2010008604A1 Elongated semiconductor devices and methods of making the same
01/21/2010WO2010008383A1 Thin sacrificial masking films for protecting semiconductors from pulsed laser process
01/21/2010WO2010007893A1 Magnetic random access memory and method for initializing thereof
01/21/2010WO2010007792A1 Solid state imaging element
01/21/2010WO2010007769A1 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory cell, and nonvolatile semiconductor memory device
01/21/2010WO2010007714A1 Solid-state imaging device and manufacturing method thereof
01/21/2010WO2010007695A1 Spin valve element and its driving method and storage device employing them
01/21/2010WO2010007594A1 Cmos photogate 3d camera system having improved charge sensing cell and pixel geometry
01/21/2010WO2010007478A1 Improved complementary metal oxide semiconductor devices
01/21/2010WO2010006984A1 Back surface technology imager pixel and related image sensor
01/21/2010WO2010006589A2 Laser scribing system for structuring substrates for thin-layer solar modules
01/21/2010WO2009142675A3 Solid state lighting component
01/21/2010WO2009134329A3 Vapor phase methods for forming electrodes in phase change memory devices
01/21/2010US20100013975 Image sensor
01/21/2010US20100013970 Semiconductor imaging instrument and manufacturing method thereof, and camera and manufacturing method thereof
01/21/2010US20100013968 Image sensor module embedded in mobile phone and method of manufacturing the same
01/21/2010US20100013967 Solid state imaging device
01/21/2010US20100013961 Pixel sensor array and image sensor for reducing resolution degradation
01/21/2010US20100013048 Interconnect line selectively isolated from an underlying contact plug
01/21/2010US20100013044 Three-dimensional silicon on oxide device isolation
01/21/2010US20100013042 CMOS image sensor including tunable read amplifier
01/21/2010US20100013039 Backside-illuminated imaging sensor including backside passivation
01/21/2010US20100013028 Semiconductor device and method for manufacturing semiconductor device
01/21/2010US20100013027 Semiconductor device and method of manufacturing the same
01/21/2010US20100013026 Integrated circuits comprising resistors having different sheet resistances and methods of fabricating the same
01/21/2010US20100013025 Semiconductor device and manufacturing method thereof
01/21/2010US20100013024 High performance stress-enhance mosfet and method of manufacture
01/21/2010US20100013023 Method for manufacturing semiconductor device, and semiconductor device
01/21/2010US20100013022 Semiconductor device with multiple gate dielectric layers and method for fabricating the same
01/21/2010US20100013021 METHOD TO REDUCE THRESHOLD VOLTAGE (Vt) IN SILICON GERMANIUM (SIGE), HIGH-K DIELECTRIC-METAL GATE, P-TYPE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS
01/21/2010US20100013020 Semiconductor device with semi-insulating substrate portions
01/21/2010US20100013019 Stressed dielectric devices and methods of fabricating same
01/21/2010US20100013018 Cmos transistor and method of manufacturing the same
01/21/2010US20100013017 Method of manufacturing semiconductor device, and semiconductor device
01/21/2010US20100013016 ESD Protection Structures on SOI Substrates
01/21/2010US20100013013 1t/0c ram cell with a wrapped-around gate device structure
01/21/2010US20100012998 Flash memory device with stacked dielectric structure including zirconium oxide and method for fabricating the same
01/21/2010US20100012995 Localized biasing for silicon on insulator structures
01/21/2010US20100012994 Semiconductor storage device
01/21/2010US20100012993 Solid-state imaging device
01/21/2010US20100012986 Cell of Semiconductor Device Having Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features and Equal Number of PMOS and NMOS Transistors
01/21/2010US20100012985 Semiconductor Device Portion Having Sub-193 Nanometers -Sized Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Having At Least Eight Transistors
01/21/2010US20100012984 Semiconductor Device Portion Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Having Equal Number of PMOS and NMOS Transistors
01/21/2010US20100012983 Semiconductor Device Portion Having Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Having Equal Number of PMOS and NMOS Transistors
01/21/2010US20100012982 Semiconductor Device Portion Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Minimum End-to-End Spacing and Having Corresponding Non-Symmetric Diffusion Regions
01/21/2010US20100012981 Semiconductor Device Portion Having Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Minimum End-to-End Spacing and Having Corresponding Non-Symmetric Diffusion Regions
01/21/2010US20100012979 Substrate for electro-optical device with light shielding section having various widths, electro-optical device, and electronic apparatus
01/21/2010US20100012941 Thin film transistor array panel for liquid crystal display having pixel electrode
01/21/2010US20100012927 Devices having vertically-disposed nanofabric articles and methods of making the same
01/21/2010US20100012925 Hybrid carbon nanotube fet (cnfet)-fet static ram (sram) and method of making same
01/21/2010US20100012916 Phase change memory
01/21/2010US20100012820 Light detecting device
01/21/2010US20100012030 Process for Deposition of Semiconductor Films
01/21/2010DE112008000094T5 CMOS-Vorrichtung mit Dual-Epi-Kanälen und selbstausgerichteten Kontakten CMOS device with dual-epi-channels and self-aligned contacts
01/21/2010DE102009020348A1 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
01/21/2010DE102006028971B4 Integriertes Schaltkreisbauelement mit einer vertikalen Diode und Herstellungsverfahren Integrated circuit device with a vertical diode and manufacturing method
01/21/2010DE102005035152B4 Mram MRAM
01/21/2010DE102004061326B4 Integrierte Schaltung Integrated circuit
01/21/2010DE102004039695B4 Verfahren zur Herstellung eines Farbkonversionsfilters A method for producing a color conversion filter
01/20/2010EP2146376A1 Solid state imaging device, its manufacturing method, and imaging device
01/20/2010EP2146212A1 Method and apparatus for selectively compacting test responses
01/20/2010EP2145351A1 Integration substrate with a ultra-high-density capacitor and a through-substrate via
01/20/2010EP2145208A2 X-ray imaging device having a polychromatic source
01/20/2010EP1449256B1 A field effect transistor semiconductor device
01/20/2010EP1309995B1 Method and apparatus for measuring parameters of an electronic device
01/20/2010CN201387892Y Solar cell assembly
01/20/2010CN201387696Y 光点阵图像系统 Optical lattice imaging systems
01/20/2010CN201387507Y Locking structure of imaging element
01/20/2010CN101632177A Packaging methods for imager devices
01/20/2010CN101632176A Depletion-mode MOSFET circuit and applications
01/20/2010CN101632089A Biometric sensors
01/20/2010CN101631206A Solid-state imaging device
01/20/2010CN101631201A Camera
01/20/2010CN101630690A Display device and method for manufacturing thereof
01/20/2010CN101630689A Organic light emitting display and method of manufacturing the same
01/20/2010CN101630688A Solid state imaging device
01/20/2010CN101630687A Solid-state imaging apparatus, case for containing solid-state imaging device and its production process
01/20/2010CN101630686A Solid-state imaging apparatus and case for containing solid-state imaging device
01/20/2010CN101630685A Thin film transistor array substrate
01/20/2010CN101630684A Semiconductor memory device and method of manufacturing the same
01/20/2010CN101630683A Integrated electrostatic discharge device
01/20/2010CN101630682A Electronic device and method of manufacturing the same
01/20/2010CN101630681A Power device having single-chip integrated rc buffer
01/20/2010CN101630680A Semiconductor device and manufacturing method thereof
01/20/2010CN100583492C Organic light emitting display and fabrication method thereof
01/20/2010CN100583488C Organic photosensitive devices
01/20/2010CN100583483C Phase change memory cell and manufacturing method
01/20/2010CN100583459C Pixel structure and its thin film transistor
01/20/2010CN100583458C Pixel structure, thin-film transistor and production method thereof
01/20/2010CN100583450C Semiconductor device and its making method
01/20/2010CN100583446C Image sensor and fabricating method thereof