Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
02/2010
02/09/2010US7659562 Electric field read/write head and method of manufacturing same and data read/write device
02/09/2010US7659556 Electron injection composition for light emitting element, light emitting element, and light emitting device
02/09/2010US7659546 Light emitting device
02/09/2010US7659532 Image reading apparatus capable of reading infrared and visible images
02/09/2010US7659518 Light or radiation image pickup apparatus
02/09/2010US7659517 Method and apparatus for triggering image acquisition in radiography
02/09/2010US7659502 Optical tactile sensor
02/09/2010US7659501 Image-sensing module of image capture apparatus and manufacturing method thereof
02/09/2010US7659500 Column current source
02/09/2010US7659499 Photoelectric conversion device and solid-state imaging device
02/09/2010US7659498 Image sensor power supply including at least one ripple rejection circuit for reducing variations in the supply voltage
02/09/2010US7659211 Method and apparatus for fabricating a memory device with a dielectric etch stop layer
02/09/2010US7659183 Solid-state imaging device and method for manufacturing the same
02/09/2010US7659175 DNA-based memory device and method of reading and writing same
02/09/2010US7659165 Method of fabricating a field effect transistor
02/09/2010US7659161 Methods of forming storage nodes for a DRAM array
02/09/2010US7659152 Localized biasing for silicon on insulator structures
02/09/2010US7659147 Method for cutting solid-state image pickup device
02/09/2010US7659137 Structure capable of use for generation or detection of electromagnetic radiation, optical semiconductor device, and fabrication method of the structure
02/09/2010US7659136 Solid-state imaging device and method of manufacturing said solid-state imaging device
02/09/2010US7659131 Process for producing a flat panel radiation detector and a flat panel radiation detector
02/09/2010US7659130 Thin film transistor array panel for display and manufacturing method thereof
02/09/2010US7659011 Electron injection layer contains an organic metal complex having a central atom of the same metal element as a constituent element of the cathode; calcium acetylacetone as complex for example; enhance the adhesion of the electron-injection layer to the cathode
02/09/2010CA2433188C Devices for imaging radionuclide emissions
02/09/2010CA2241779C Indirect x-ray image detector for radiology
02/04/2010WO2010014408A2 Method and apparatus for forming i/o clusters in integrated circuits
02/04/2010WO2010014150A1 Image sensor with reduced red light crosstalk
02/04/2010WO2010014138A1 Image sensor having multiple sensing layers
02/04/2010WO2010013886A2 High density flash memory cell device, cell string and fabrication method therefor
02/04/2010WO2010013811A1 High-speed charge transfer photodiode, lock-in pixel, and solid-state imaging device
02/04/2010WO2010013779A1 Distance image sensor and method for generating image signal by time-of-flight method
02/04/2010WO2010013683A1 Semiconductor device and method for manufacturing semiconductor device
02/04/2010WO2010013644A1 Organic el display device and method for manufacturing same
02/04/2010WO2010013641A1 Method for manufacturing an organic electroluminescence element, light emitting device, and display device
02/04/2010WO2010013639A1 Display device and display device manufacturing method
02/04/2010WO2010013637A1 Color conversion organic el display
02/04/2010WO2010013626A1 Display device and method for manufacturing display device
02/04/2010WO2010013566A1 Magnetoresistive element, magnetic random access memory, and initialization method thereof
02/04/2010WO2010013515A1 Process for producing display device
02/04/2010WO2010013432A1 Solid-state imaging device and method for fabricating the same
02/04/2010WO2010013417A1 Solid state imaging device and differential circuit
02/04/2010WO2010013404A1 Semiconductor device and method for manufacturing the same
02/04/2010WO2010013368A1 Solid state imaging device
02/04/2010WO2010013008A1 Active matrix oled display and driver therefor
02/04/2010WO2010012739A1 Semiconductor-on-insulator substrate coated with intrinsic and doped diamond films
02/04/2010WO2010012259A2 Thin-film solar module which is contact-connected on one side and has an internal contact layer
02/04/2010WO2009150654A3 Solar cell with funnel-like groove structure
02/04/2010WO2009134678A3 Surface treatment to improved resistive-switching characteristics
02/04/2010WO2009107993A3 High current control circuit including metal-insulator transition device, and system including the high current control circuit
02/04/2010WO2009107948A3 Circuit for preventing self-heating of metal-insulator-transition (mit) device and method of fabricating integrated-device for the same circuit
02/04/2010US20100029068 Semiconductor device and semiconductor device production system
02/04/2010US20100027369 Semiconductor integrated circuit device
02/04/2010US20100027131 Optical member, solid-state imaging device, and manufacturing method
02/04/2010US20100026923 Pixel structure and method for repairing the same
02/04/2010US20100026866 Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
02/04/2010US20100026864 Image sensor and method for manufacturing the same
02/04/2010US20100026814 Solid-state image pick-up device, data transmission method, and image pickup apparatus
02/04/2010US20100025861 Hybrid-Level Three-Dimensional Mask-Programmable Read-Only Memory
02/04/2010US20100025831 Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
02/04/2010US20100025805 Semiconductor devices with extended active regions
02/04/2010US20100025804 Soi substrate and method for manufacturing soi substrate
02/04/2010US20100025803 Image sensor and method for manufacturing the same
02/04/2010US20100025799 Wafer for backside illumination type solid imaging device, production method thereof and backside illumination type solid imaging device
02/04/2010US20100025790 Image sensor and method of manufacturing the same
02/04/2010US20100025789 Imaging device, method for manufacturing the imaging device and cellular phone
02/04/2010US20100025788 Solid-state image capturing device, method for manufacturing the same and electronic information device
02/04/2010US20100025776 Drive current adjustment for transistors by local gate engineering
02/04/2010US20100025774 Schottky barrier integrated circuit
02/04/2010US20100025772 Semiconductor device comprising a silicon/germanium resistor
02/04/2010US20100025771 Performance enhancement in pmos and nmos transistors on the basis of silicon/carbon material
02/04/2010US20100025770 Gate dielectrics of different thickness in pmos and nmos transistors
02/04/2010US20100025769 Isolated high performance fet with a controllable body resistance
02/04/2010US20100025766 Transistor device and method of manufacturing such a transistor device
02/04/2010US20100025760 Semiconductor device
02/04/2010US20100025750 Memory and method of fabricating the same
02/04/2010US20100025749 Semiconductor device
02/04/2010US20100025736 Cell of Semiconductor Device Having Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and At Least Eight Transistors
02/04/2010US20100025735 Cell of Semiconductor Device Having Sub-193 Nanometers-Sized Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Equal Number of PMOS and NMOS Transistors
02/04/2010US20100025734 Cell of Semiconductor Device Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Equal Number of PMOS and NMOS Transistors
02/04/2010US20100025733 Cell of Semiconductor Device Having Sub-193 Nanometers-Sized Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and At Least Eight Transistors
02/04/2010US20100025732 Cell of Semiconductor Device Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and At Least Eight Transistors
02/04/2010US20100025731 Cell of Semiconductor Device Having Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Equal Number of PMOS and NMOS Transistors
02/04/2010US20100025710 Semiconductor device and fabrication method thereof
02/04/2010US20100025689 Thin film transisitor array panel and manufacturing tmethod thereof
02/04/2010US20100025688 Semiconductor element and display device using the same
02/04/2010US20100025659 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
02/04/2010US20100025592 Method and apparatus for radiation detection
02/04/2010US20100025571 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
02/04/2010US20100025570 Photoelectric conversion apparatus and image pickup system using the apparatus
02/04/2010US20100025569 Solid-state imaging device, method of producing the same, and imaging device
02/04/2010DE102009034950A1 Bildsensor und Verfahren zu dessen Herstellung Image sensor and method for its production
02/04/2010DE102009034083A1 Halbleiterbauelement Semiconductor device
02/04/2010DE102008035813A1 Durchlassstromeinstellung für Transistoren durch lokale Gateanpassung Forward current setting for transistors by gate local adaptation
02/04/2010DE102008035808A1 Halbleiterbauelement mit einem Silizium/Germanium-Widerstand A semiconductor device comprising a silicon / germanium resistance
02/04/2010DE102008035806A1 Transistor mit eingebettetem Si/GE-Material mit einem verbesserten Boreinschluss Transistor with embedded Si / GE material with improved Boreinschluss
02/04/2010DE102008034789B4 Verfahren zum Herstellen einer Halbleitervorrichtung, Verfahren zum Herstellen einer SOI-Vorrichtung, Halbleitervorrichtung und SOI-Vorrichtung A method of manufacturing a semiconductor device, method for producing a SOI device, semiconductor device, and SOI device
02/04/2010DE102008030853A1 Dreidimensionaler Transistor mit einer Doppelkanal-Konfiguration Three-dimensional transistor having a double channel configuration
02/04/2010DE102005006153B4 Verfahren zum Herstellen eines Feldeffekttransistors (FETs) A method of manufacturing a field effect transistor (FETs)
02/04/2010DE102004047631B4 Verfahren zum Ausbilden einer Halbleiterstruktur in Form eines Feldeffekttransistors mit einem verspannten Kanalgebiet und Halbleiterstruktur A method of forming a semiconductor structure in the form of a field effect transistor with a strained channel region and the semiconductor structure
02/04/2010DE102004021636B4 Halbleitervorrichtung mit selbstausgerichtetem vergrabenem Kontaktpaar und Verfahren zum Ausbilden desselben Of the same semiconductor device having a buried contact pair selbstausgerichtetem and method for forming