Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
04/1990
04/03/1990US4914044 Upper and lower modules of p-doped and hydrogen-doped silicon; optical coupler insulator strip pattern by silk-screening
04/03/1990US4914043 Method of making an integrated light-triggered and light-quenched static induction thyristor
04/03/1990US4914042 Forming a transition metal silicide radiation detector and source
04/03/1990US4913674 Liquid crystal display devices and their method of manufacture
04/03/1990CA1267444A1 Bicmos process having narrow bipolar emitter and implanted aluminum isolation
03/1990
03/29/1990DE3931711A1 Dynamische random-access-speicherzelle und verfahren zur herstellung Dynamic random access memory cell and method for producing
03/28/1990EP0360607A2 Evaluating method for solid state image sensor
03/28/1990EP0360596A1 Semiconductor integrated circuit and manufacturing method thereof
03/28/1990EP0360595A2 Solid state image sensor
03/28/1990EP0360541A1 Dynamic random access memory device
03/28/1990EP0360507A2 Semiconductor integrated circuit device having an improved arrangement of power source lines
03/28/1990EP0360504A2 One transistor flash eprom cell
03/28/1990EP0360477A2 Integrated circuit power supply contact
03/28/1990EP0360315A1 Integrated semiconductor memory circuit with dual use of bit lines
03/28/1990EP0360288A2 EPROM erasable by UV radiation having redundant circuit
03/28/1990EP0360164A2 Standard cell output driver connection system
03/28/1990EP0359866A1 Process and appliance for measuring current consumption in a monolitic IC
03/28/1990EP0359852A1 Process for manufacturing shallow doped regions having a low layer resistivity in a silicon substrate
03/28/1990EP0359743A1 Cmos-ram store on a gate array arrangement.
03/28/1990EP0232322B1 Selectively doping isolation trenches utilized in cmos devices
03/28/1990CN1007389B 半导体器件 Semiconductor devices
03/27/1990US4912709 Flexible VLSI on-chip maintenance and test system with unit I/O cell design
03/27/1990US4912676 Erasable programmable memory
03/27/1990US4912674 Read-only memory
03/27/1990US4912665 Arithmetic logic unit capable of having a narrow pitch
03/27/1990US4912560 Solid state image sensing device
03/27/1990US4912537 Image sensing array with charge isolation
03/27/1990US4912536 Charge accumulation and multiplication photodetector
03/27/1990US4912535 Trench type semiconductor memory device having side wall contact
03/27/1990US4912534 Nonvolatile semiconductor memory device
03/27/1990US4912533 End face light emitting element
03/27/1990US4912531 Three-terminal quantum device
03/27/1990US4912055 Doping; overcoating with oxide forming barriers; forming nitride; etching
03/27/1990US4912054 Integrated bipolar-CMOS circuit isolation process for providing different backgate and substrate bias
03/27/1990US4911512 Waveguide type optical head
03/22/1990WO1990003065A1 Monolithically integrated electronic machine
03/22/1990DE3930657A1 Semiconductor structure with stacked capacitor electrodes - uses low stress oxide layer on poly:silicon during etching of recess transistor gate to avoid undercutting
03/21/1990EP0359680A1 Integretable active diode
03/21/1990EP0359679A1 Method of producing a diode for control and protection
03/21/1990EP0359508A2 Sequential-quenching resonant-tunneling transistor
03/21/1990EP0359329A2 Wide band gap semiconductor light-emitting devices
03/21/1990EP0359207A2 Infrared detector having homojunction structure
03/21/1990EP0359204A2 Semicondutor memory device capable of relieving defective bits
03/21/1990EP0359203A2 Semiconductor memory device
03/21/1990EP0358668A1 Vlsi chip
03/21/1990CN1007305B Method of making monolithic integrated circuit comprising at least one bipolar planar transistor
03/20/1990US4910735 Semiconductor integrated circuit with self-testing
03/20/1990US4910709 Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell
03/20/1990US4910707 EEPROM with protective circuit
03/20/1990US4910588 Image pick-up apparatus with high resolution and anti-bloom characteristics
03/20/1990US4910576 Memory cell
03/20/1990US4910574 Porous circuit macro for semiconductor integrated circuits
03/20/1990US4910572 Semiconductor device and method of fabricating the same
03/20/1990US4910570 Photo-detector for ultraviolet and process for its production
03/20/1990US4910568 Image sensor
03/20/1990US4910567 Dram cell and method for fabricating
03/20/1990US4910566 Layer structure of a memory cell for a dynamic random access memory device and method for producing the same
03/20/1990US4910564 Highly integrated field effect transistor and method for manufacturing the same
03/20/1990US4910563 Complementary circuit and structure with common substrate
03/20/1990US4910534 Light emitting apparatus
03/20/1990US4910418 Semiconductor fuse programmable array structure
03/20/1990US4910413 Image pickup apparatus
03/20/1990US4910412 Light biased photoresponsive array
03/20/1990US4910165 Method for forming epitaxial silicon on insulator structures using oxidized porous silicon
03/20/1990US4910162 Integrated circuit; containing silicon switch transistor
03/20/1990US4910161 Preparing first electroconductive semiconductor substate; doping; forming electrodes; then second electroconductive layer; supplying constant voltage
03/20/1990US4910160 Masking oxide, etching, applying dopes, diffusion cycles on silicon substrate
03/20/1990US4910154 Mercury, cadmium, telluride intermetallic on silicon substrate
03/20/1990CA1266913A1 Picture pick-up device including a solid-state image sensor and an electronic shutter
03/15/1990DE3927679A1 Transistor with emitter layer diffused in base layers - has collector layer near base layer, but spaced from emitter layer with sectional main region
03/14/1990EP0358376A2 Integrated test circuit
03/14/1990EP0358371A2 Enhanced test circuit
03/14/1990EP0358365A2 Testing buffer/register
03/14/1990EP0358322A2 Magnetic field sensors
03/14/1990EP0358246A1 Method of manufacturing a semiconductor device comprising a silicon body in which semiconductor regions are formed by ion implantations
03/14/1990EP0357982A2 Memory cell with improved single event upset rate reduction circuitry
03/14/1990EP0357980A2 A memory cell with capacitance for single event upset protection
03/14/1990EP0357932A1 Driving method for a solid-state imaging device for improving smear phenomenon
03/14/1990EP0160003B1 Mos floating gate memory cell and process for fabricating same
03/14/1990CN2054570U High definition tv pickup tube target
03/14/1990CN1040462A Cmos transistor and one-capacitor dynamic-random-access memory cell and fabrication process thereof
03/13/1990US4908718 Image reading apparatus having a light shielding layer arranged on the sides of the substrate and protective layers of a photo sensor
03/13/1990US4908692 Fuse-containing semiconductor device
03/13/1990US4908691 Selective epitaxial growth structure and isolation
03/13/1990US4908690 Semiconductor integrated circuit device with high reliability wiring layers
03/13/1990US4908686 Stacked silicide/silicon mid- to long-wavelength infrared detector
03/13/1990US4908684 Solid-state imaging device
03/13/1990US4908682 Power MOSFET having a current sensing element of high accuracy
03/13/1990US4908680 Semiconductor integrated circuit
03/13/1990US4908615 Traffic light control system and method
03/13/1990US4908525 Cut-only CMOS switch for discretionary connect and disconnect
03/13/1990US4908518 Interline transfer CCD image sensing device with electrode structure for each pixel
03/13/1990US4908328 High voltage power IC process
03/13/1990US4907861 Thin film transistor, method of repairing the film transistor and display apparatus having the thin film transistor
03/08/1990WO1990002449A1 In-chip intermediate driver for discrete wsi systems
03/08/1990WO1990002419A1 Process methodology for two-sided fabrication of devices on thinned silicon
03/08/1990WO1990002418A1 Image sensing device with reduced smear
03/08/1990DE3829843A1 Elektronisches, monolithisch integriertes geraet Electronics, monolithically integrated geraet
03/08/1990DE3828812A1 Three-dimensional integrated circuit and method for the production thereof
03/07/1990EP0357532A2 Improvements in performance sensing for integrated circuit chips
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