Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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05/09/1990 | EP0367060A2 Microprocessor having high current drive |
05/09/1990 | EP0366886A1 Passivated compound semiconductor structure |
05/09/1990 | EP0366882A2 An ultra dense DRAM cell array and its method of fabrication |
05/08/1990 | US4924437 Erasable programmable memory including buried diffusion source/drain lines and erase lines |
05/08/1990 | US4924339 Input protecting circuit in use with a MOS semiconductor device |
05/08/1990 | US4924293 Semiconductor integrated circuit device |
05/08/1990 | US4924290 Semiconductor device having improved multilayered wirings |
05/08/1990 | US4924287 Personalizable CMOS gate array device and technique |
05/08/1990 | US4924286 Semiconductor device |
05/08/1990 | US4924285 Monolithic multichannel detector amplifier arrays and circuit channels |
05/08/1990 | US4924282 Image reading device with moisture resistant layer |
05/08/1990 | US4924280 Semiconductor fet with long channel length |
05/08/1990 | US4924279 Thin film transistor |
05/08/1990 | US4924278 EEPROM using a merged source and control gate |
05/08/1990 | US4924277 MIS transistor device |
05/08/1990 | US4924276 Optoelectronic component |
05/08/1990 | US4924212 Temperature threshold detection circuit |
05/08/1990 | US4924119 Electrically programmable erasable inverter device with deprogramming limitation |
05/08/1990 | US4924111 Microprocessor layout minimizing temperature and current effects |
05/08/1990 | US4923821 Forming trench in semiconductor substrate with rounded corners |
05/08/1990 | CA1268862A1 Method for the manufacture of complementary mos field effect transistors in vlsi technology |
05/03/1990 | WO1990004855A1 Nonvolatile semiconductor memory and method of producing the same |
05/03/1990 | WO1990004853A1 A print head |
05/03/1990 | DE3835569A1 Protective arrangement |
05/02/1990 | EP0366587A2 Semiconductor devices having closely spaced device regions formed using a self aligning reverse image fabrication process |
05/02/1990 | EP0366540A1 Pretreatment board for output currents of detector diodes exposed to thermal radiation |
05/02/1990 | EP0366423A2 Manufacturing method of semiconductor non-volatile memory device |
05/02/1990 | EP0366213A1 Darlington device with an ultra-light weight emitter speed-up transistor, and relative manufacturing method |
05/02/1990 | EP0366146A2 Thin film transistor having memory function and method for using thin film transistor as memory element |
05/02/1990 | EP0366116A2 Thin film transistor panel and manufacturing method thereof |
05/02/1990 | EP0365690A1 Semiconductor device and semiconductor memory device |
05/01/1990 | USRE33209 Monolithic semiconductor switching device |
05/01/1990 | US4922500 Cross-coupled quantum-well stripe laser array |
05/01/1990 | US4922492 Architecture and device for testable mixed analog and digital VLSI circuits |
05/01/1990 | US4922460 Semiconductor memory device with folded bit line structure suitable for high density |
05/01/1990 | US4922453 Bit line structure of dynamic type semiconductor memory device |
05/01/1990 | US4922441 Gate array device having a memory cell/interconnection region |
05/01/1990 | US4922403 Voltage multiplier circuit with reduced back-gate bias effect |
05/01/1990 | US4922371 For limiting the voltage potential at a contact point |
05/01/1990 | US4922367 Circuit for preventing latch-up of parasitic thyristor formed in CMOS integrated circuit |
05/01/1990 | US4922319 Semiconductor programmable memory device |
05/01/1990 | US4922318 Bipolar and MOS devices fabricated on same integrated circuit substrate |
05/01/1990 | US4922317 CMOS device having Schottky diode for latch-up prevention |
05/01/1990 | US4922316 For a semiconductor integrated circuit |
05/01/1990 | US4922313 Process for manufacturing semiconductor memory device and product formed thereby |
05/01/1990 | US4922312 DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor |
05/01/1990 | US4922140 CMOS/NMOS integrated circuit with supply voltage delay variation compensation |
05/01/1990 | US4922138 Scan circuit using a plural bootstrap effect for forming scan pulses |
05/01/1990 | US4922136 Master slice integrated circuit having high and low speed unit cells |
05/01/1990 | US4922135 GaAs MESFET logic circuits including push pull output buffers |
05/01/1990 | US4922133 Voltage detecting circuit |
05/01/1990 | US4922129 Feed forward darlington circuit with reduced NPN reverse beta sensitivity |
05/01/1990 | US4922117 Photoelectric conversion device having a constant potential wiring at the sides of the common wiring |
05/01/1990 | US4922116 Flicker free infrared simulator with resistor bridges |
05/01/1990 | US4921816 Method of making a trench dram |
05/01/1990 | US4921815 Method of producing a semiconductor memory device having trench capacitors |
05/01/1990 | US4921814 Method of producing an MMIC |
05/01/1990 | US4921813 Method for making a polysilicon transistor |
05/01/1990 | US4921812 Process of fabricating field effect transistor device |
05/01/1990 | US4921811 Semiconductor integrated circuit device and a method for manufacturing the same |
05/01/1990 | US4921810 Method for testing semiconductor devices |
05/01/1990 | CA2001692A1 Memory device using thin film transistors having memory function and method for manufacturing same |
05/01/1990 | CA1268363A1 Optical waveguide utilizing a layered structure |
04/26/1990 | DE3835700A1 Arrangement and method for producing an image sensor |
04/25/1990 | EP0365445A2 Electroluminescent storage display with improved intensity driver circuits |
04/25/1990 | EP0365312A2 Semiconductor device and signal processing device having said device provided therein |
04/25/1990 | EP0365294A2 Photometric apparatus employing solid-state imaging device |
04/25/1990 | EP0365244A2 An active matrix substrate |
04/25/1990 | EP0365036A2 Thin film transistor and crossover structure for liquid crystal displays and method of making |
04/25/1990 | EP0365002A2 Semiconductor memory device |
04/25/1990 | EP0365000A1 CCD image sensor with vertical overflow drain |
04/25/1990 | EP0364925A1 Semiconductor integrated circuit having i/o terminals allowing independent connection test |
04/25/1990 | EP0364879A2 Gallium arsenide monolithically integrated sampling head using equivalent time sampling having a bandwidth greater than 100 GHZ |
04/25/1990 | EP0364818A2 Method for making a polysilicon transistor |
04/25/1990 | EP0364813A2 Semiconductor memory device with memory cells including ferroelectric capacitors |
04/25/1990 | EP0364769A2 Semiconductor device having a gate electrode consisting of a plurality of layers |
04/25/1990 | EP0364448A1 Monolithic integrated waveguide-photodiode-fet combination. |
04/24/1990 | US4920513 Semiconductor memory device using diode-capacitor combination |
04/24/1990 | US4920445 Junction-breakdown protection semiconductor device |
04/24/1990 | US4920402 Integrated circuit device |
04/24/1990 | US4920400 Semiconductor device |
04/24/1990 | US4920399 Conductance-modulated integrated transistor structure |
04/24/1990 | US4920398 Semiconductor MIS integrated circuit device |
04/24/1990 | US4920397 Structure of complementary field effect transistor |
04/24/1990 | US4920396 CMOS having buried layer for carrier recombination |
04/24/1990 | US4920395 High sensitivity photodiode |
04/24/1990 | US4920394 Solid solutions of cadmium sulfide and cadmium-selenium component with copper added; high speed; copiers, fax machines |
04/24/1990 | US4920392 Complementary field effect transistor and method of forming the same |
04/24/1990 | US4920391 Semiconductor memory device |
04/24/1990 | US4920390 Semiconductor memory device and method of fabricating the same |
04/24/1990 | US4920389 Memory call array structure and process for producing the same |
04/24/1990 | US4920388 Power transistor with integrated gate resistor |
04/24/1990 | US4920287 Output buffer having reduced electric field degradation |
04/24/1990 | US4920283 High speed, low noise integrated circuit |
04/24/1990 | US4920135 Nonphytotoxic, interfere with metamorphosis |
04/24/1990 | US4920077 Aluminum annealing passivation carried out within a plasma enhanced chemical vapor deposition reactor |
04/24/1990 | US4920075 A semiconductor substrate and a transparent layer; etching; thermal treating to form a curvature |
04/24/1990 | US4920066 Process for fabricating a high-speed CMOS TTL semiconductor device |
04/24/1990 | US4920065 Method of making ultra dense dram cells |
04/19/1990 | WO1990004264A1 Semiconducteur device |