| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 01/08/1991 | US4984200 Semiconductor circuit device having a plurality of SRAM type memory cell arrangement |
| 01/08/1991 | US4984199 Semiconductor memory cells having common contact hole |
| 01/08/1991 | US4984197 Semiconductor memory device having transfer gates coupled between bit line pairs and sense amplifier circuits |
| 01/08/1991 | US4984196 Read/write memory |
| 01/08/1991 | US4984064 Semiconductor device |
| 01/08/1991 | US4984058 Semiconductor integrated circuit device |
| 01/08/1991 | US4984055 Semiconductor device having a plurality of conductive layers and manufacturing method therefor |
| 01/08/1991 | US4984054 Electric fuse for a redundancy circuit |
| 01/08/1991 | US4984052 Bonded substrate of semiconductor elements having a high withstand voltage |
| 01/08/1991 | US4984050 Gate-array type intergated circuit semiconductor device |
| 01/08/1991 | US4984047 Solid-state image sensor |
| 01/08/1991 | US4984046 Silicon pressure sensor having a resistance layer of polycrystalline semicondutor |
| 01/08/1991 | US4984044 Semiconductor |
| 01/08/1991 | US4984038 Semiconductor memory and method of producing the same |
| 01/08/1991 | US4984035 Monolithic light emitting diode array |
| 01/08/1991 | US4984034 Non-single-crystalline light emitting semiconductor device matrix with insulation |
| 01/08/1991 | US4984033 Thin film semiconductor device with oxide film on insulating layer |
| 01/08/1991 | US4984031 Integrated circuit arrangement |
| 01/08/1991 | US4984030 Vertical MOSFET DRAM |
| 01/08/1991 | US4983843 Radon detector |
| 01/08/1991 | US4983539 Crystallization from amorphous nucleation surface, crystal regions with differing electrical properties |
| 01/08/1991 | US4983251 Method of manufacturing semiconductor devices |
| 01/08/1991 | US4983022 Liquid crystal display device |
| 01/08/1991 | US4983005 Optoelectronic integrated semiconductor device including a separator of the TE and TM polarizations |
| 01/08/1991 | CA1278883C Process for making self-aligning thin film transistors |
| 01/08/1991 | CA1278863C Charge-coupled device |
| 01/08/1991 | CA1278849C Active matrix display screen using hydrogenated amorphous silicon carbide and process for producing this screen |
| 01/07/1991 | CA2020241A1 Spray encapsulation of photovoltaic modules |
| 01/03/1991 | DE4018977A1 EEPROM with NAND memory cells - has potential stabiliser above semiconductor support layer, next to respective data transmission line |
| 01/02/1991 | EP0406007A2 Non volatile semiconductor memory device |
| 01/02/1991 | EP0405996A1 Method of manufacturing a bipolar semiconductor memory |
| 01/02/1991 | EP0405979A2 Method of forming a bipolar transistor having closely spaced device regions |
| 01/02/1991 | EP0405947A2 Method of manufacturing thick-film devices |
| 01/02/1991 | EP0405877A2 Thermally optimized interdigitated transistor |
| 01/02/1991 | EP0405865A2 Method of connecting opposed pairs of contacts of detector and readout microchips in a hybrid detector array assembly |
| 01/02/1991 | EP0405833A2 Programmable logic level input buffer |
| 01/02/1991 | EP0405822A1 Semiconductor power device |
| 01/02/1991 | EP0405670A1 Radiation-sensitive semiconductor device and reading or writing unit comprising such a radiation-sensitive semiconductor device |
| 01/02/1991 | EP0405586A1 Semiconductor device and method of burning in the same |
| 01/02/1991 | EP0405576A2 Semiconductor memory device |
| 01/02/1991 | EP0405531A2 A visual information processing device |
| 01/02/1991 | EP0405460A2 Semiconductor device using standard cell system |
| 01/02/1991 | EP0405458A2 Ultraviolet-erasable type non-volatile semiconductor memory device having multilayered wiring structure |
| 01/02/1991 | EP0405401A2 Apparatus for transferring electric charges |
| 01/02/1991 | EP0405304A2 Thin film resistors whose surface resistance values are comprised between 1M-ohms and several G-ohms and process of making it |
| 01/02/1991 | EP0405293A1 Silicide compatible CMOS process with a differential oxide implant mask |
| 01/02/1991 | EP0405292A1 Double-diffused drain CMOS process using a counterdoping technique |
| 01/02/1991 | EP0405214A2 PIN-FET combination with buried P-type layer |
| 01/02/1991 | EP0405210A2 High speed charge-coupled sampler and rate reduction circuit |
| 01/02/1991 | EP0405200A1 MOS-gated bipolar power semiconductor device |
| 01/02/1991 | EP0405183A2 Dielectric isolation used in high voltage power IC process |
| 01/02/1991 | EP0405140A1 Bit- and block-erasing of an electrically erasable and programmable read-only memory array |
| 01/02/1991 | EP0405063A2 An insulated-gate fet on an soi-structure |
| 01/02/1991 | EP0405045A1 A mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof |
| 01/02/1991 | EP0404986A1 Identification circuit for integrated semiconductor circuits |
| 01/02/1991 | EP0404985A1 Identification circuit for integrated semiconductor circuits |
| 01/02/1991 | EP0404977A1 Input protection structure for integrated circuits |
| 01/02/1991 | EP0404863A1 Monolithically integrated electronic apparatus |
| 01/02/1991 | CN1048284A Photoelectric mixed integrated semiconductor optical bistable device |
| 01/02/1991 | CN1011085B Circuit arrangement for testing integrated circuit components |
| 01/01/1991 | US4982377 Erasable programmable read only memory device improved in operation speed and in the amount of read out current |
| 01/01/1991 | US4982372 Semiconductor memory device having divided word or bit line drivers and operating method therefor |
| 01/01/1991 | US4982368 Dynamic semiconductor memory device having an enlarged operating margin for information reading |
| 01/01/1991 | US4982366 Static semiconductor memory with readout inhibit means |
| 01/01/1991 | US4982363 Sensing structure for single ended input |
| 01/01/1991 | US4982309 Metal, metal oxide |
| 01/01/1991 | US4982269 Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof |
| 01/01/1991 | US4982262 Inverted groove isolation technique for merging dielectrically isolated semiconductor devices |
| 01/01/1991 | US4982259 Sensitive thyristor having improved noise-capability |
| 01/01/1991 | US4982256 Semiconductors |
| 01/01/1991 | US4982253 Semiconductor charge storage element and method of operating such a storage element |
| 01/01/1991 | US4982252 Solid state imaging device |
| 01/01/1991 | US4982251 Silicon with fluorine atoms |
| 01/01/1991 | US4982245 Compound diode assembly of reduced leakage current |
| 01/01/1991 | US4982244 Buried Schottky clamped transistor |
| 01/01/1991 | US4982120 Power supply decoupling mechanism for integrated circuits |
| 01/01/1991 | US4982096 Multi-element radiation detector |
| 01/01/1991 | US4982079 Photo-sensor having plural transparent layers and a conductive layer to reduce electrostaslic charges |
| 01/01/1991 | US4981812 Process for fabricating a semiconductor read only memory |
| 01/01/1991 | US4981807 Semiconductors |
| 01/01/1991 | US4981525 Photovoltaic device |
| 12/30/1990 | WO1991000612A1 Charge sensor and spectrometers incorporating it |
| 12/27/1990 | WO1990016083A1 Charge-coupled imager with dual gate anti-blooming structure |
| 12/27/1990 | WO1990016082A1 Radiation detector array using radiation sensitive bridges |
| 12/27/1990 | WO1990016081A1 HIGH DENSITY BiCMOS CIRCUITS AND METHODS OF MAKING SAME |
| 12/27/1990 | EP0404553A1 Semiconductor memory device |
| 12/27/1990 | EP0404464A2 Manufacture of semiconductor devices |
| 12/27/1990 | EP0404360A2 Shielded transistor device |
| 12/27/1990 | EP0404295A1 Method for fabricatinf integrated circuit capacitors |
| 12/27/1990 | EP0404220A1 Device for protection against overvoltages of integrated electronic circuits, particularly for applications in the motor car field |
| 12/27/1990 | EP0404180A2 Semiconductor integrated circuit and method of making the same |
| 12/27/1990 | EP0404124A2 Charge pump having pull-up circuit operating with two clock pulse sequences |
| 12/27/1990 | EP0404095A2 Integratable power transistor with optimization of direct secondary breakdown phenomena |
| 12/27/1990 | EP0404026A2 Circuit to reduce the sensibility to latch-up in a CMOS circuit |
| 12/27/1990 | EP0404008A2 Substrate bias generation circuit used in semiconductor integrated circuit |
| 12/27/1990 | EP0403939A2 Method of driving a solid state imaging device |
| 12/27/1990 | EP0403898A2 Wafer-scale semiconductor integrated circuit device and method of forming interconnection lines arranged between chips of wafer-scale semiconductor integrated circuit device |
| 12/27/1990 | EP0403571A1 Method of forming a semi-custom integrated circuit |
| 12/26/1990 | CA2019826A1 Transistor device drive circuit |
| 12/25/1990 | US4980890 Semiconductor integrated circuit |