| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 03/03/1993 | EP0528956A1 BASIC CELL FOR BiCMOS GATE ARRAY |
| 03/03/1993 | CN1020027C Lateral PNP Transistor using latch voltage of NPN transistor |
| 03/03/1993 | CN1020026C Integrated bipolar and cmos transistor fabrication process |
| 03/02/1993 | US5191625 Terminal for a frequency divided, optical communication system |
| 03/02/1993 | US5191551 Non-volatile semiconductor memory device with transistor paralleling floating gate transistor |
| 03/02/1993 | US5191550 Dual antifuse memory device |
| 03/02/1993 | US5191542 Automatic floorplan operation apparatus |
| 03/02/1993 | US5191510 Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices |
| 03/02/1993 | US5191509 Textured polysilicon stacked trench capacitor |
| 03/02/1993 | US5191498 Safety decive for integrated circuit |
| 03/02/1993 | US5191451 Active matrix display device having drain electrodes of the pair of tfts being symmetrically formed with respect to the central plane to prevent the flicker due to the different parasitic capacitances |
| 03/02/1993 | US5191426 CCD image pickup apparatus with digital synthesized video output signal |
| 03/02/1993 | US5191405 Aluminum and tungsten wires |
| 03/02/1993 | US5191402 Semiconductor device having an inter-layer insulating film disposed between two wiring layers |
| 03/02/1993 | US5191401 Semiconductor device |
| 03/02/1993 | US5191399 Solid-state imaging device with improved photodetector |
| 03/02/1993 | US5191395 Mos type semiconductor device with means to prevent parasitic bipolar transistor |
| 03/02/1993 | US5191244 N-channel pull-up transistor with reduced body effect |
| 03/02/1993 | US5191240 Bicmos driver circuits with improved low output level |
| 03/02/1993 | US5191237 Field-effect transistor type semiconductor sensor |
| 03/02/1993 | US5191235 Semiconductor integrated circuit device having substrate potential detection circuit |
| 03/02/1993 | US5191219 Information processing apparatus including a planar optical waveguide |
| 03/02/1993 | US5191202 Photoelectric conversion device |
| 03/02/1993 | US5190888 Method for producing a doped polycide layer on a semiconductor substrate |
| 03/02/1993 | US5190887 Method of making electrically erasable and electrically programmable memory cell with extended cycling endurance |
| 03/02/1993 | US5190886 Semiconductor device and method of production |
| 03/02/1993 | US5190883 Method for making an integrated light guide detector structure made of a semiconductive material |
| 03/02/1993 | CA1314078C Output buffer with ground bounce control |
| 03/02/1993 | CA1314077C Bicmos power transition circuit |
| 02/25/1993 | DE4227251A1 Delay time calculator for logic block contg. MOS transistor - uses layout memory and stores delay times according to input signal gradient for each layout |
| 02/25/1993 | DE4226828A1 CCD image sensor e.g. for missile - has photodetector matrix arranged in spaces between vertical CCD zigzag regions with gate transfer stages |
| 02/25/1993 | DE4223466A1 Halbleiterbauelement zum schuetzen einer elektrostatischen spannung A semiconductor device for protecting an electrostatic voltage |
| 02/25/1993 | DE4206278A1 Integriertes schaltkreis-bauelement mit unterdrueckten stromversorgungsstoerungen Integrated-circuit-component-with oppressed stromversorgungsstoerungen |
| 02/24/1993 | EP0528744A2 Latch assisted fuse testing for customized integrated circuits |
| 02/24/1993 | EP0528691A1 Contact alignment for integrated circuits |
| 02/24/1993 | EP0528690A1 Contact alignment for read only memory devices |
| 02/24/1993 | EP0528564A2 Self-aligned stacked gate EPROM cell using tantalum oxide control gate dielectric |
| 02/24/1993 | EP0528490A2 Electronic matrix array devices and systems incorporating such devices |
| 02/24/1993 | EP0528417A2 One-time, voltage-programmable, read-only memory array having memory cell igfets, each of which is coupled to a reference voltage line via an anti-fuse element |
| 02/24/1993 | EP0528413A2 Gain control circuit and semiconductor device |
| 02/24/1993 | EP0528352A1 Semiconductor memory device |
| 02/24/1993 | EP0528302A1 Dynamic circuit disguise for microelectronic integrated digital logic circuits |
| 02/24/1993 | EP0528281A2 Structure of circuit having at least a capacitor and process of fabrication |
| 02/24/1993 | EP0528183A2 Dynamic random access memory having a stacked fin capacitor with reduced fin thickness |
| 02/24/1993 | EP0527827A1 Optoelectronic device |
| 02/23/1993 | US5189595 Edge shrinkage compensated devices |
| 02/23/1993 | US5189594 Capacitor in a semiconductor integrated circuit and non-volatile memory using same |
| 02/23/1993 | US5189593 Integrated distributed resistive-capacitive network |
| 02/23/1993 | US5189588 Surge protection apparatus |
| 02/23/1993 | US5189503 Insulator film of transition metal oxide and pieces of dissimilar metal; stabilization |
| 02/23/1993 | US5189500 Multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions and manufacturing method thereof |
| 02/23/1993 | US5189499 Charge-coupled device and process of fabrication thereof |
| 02/23/1993 | US5189497 Semiconductor memory device |
| 02/23/1993 | US5189297 Planar double-layer heterojunction HgCdTe photodiodes and methods for fabricating same |
| 02/23/1993 | US5189296 Optical receiver having a low capacitance integrated photodetector |
| 02/23/1993 | US5188975 Method of producing a connection hole for a DRAM having at least three conductor layers in a self alignment manner. |
| 02/23/1993 | US5188974 Photoconductivity; ohmic contact layer that is removed after etching |
| 02/23/1993 | US5188973 Method of manufacturing SOI semiconductor element |
| 02/23/1993 | US5188972 Method for making bipolar transistor by self-aligning the emitter to the base contact diffusion |
| 02/23/1993 | US5187986 Semiconductor sensor |
| 02/23/1993 | CA2014399C Method of manufacturing a semiconductor integrated circuit device |
| 02/18/1993 | WO1993003501A1 Compact semiconductor store arrangement and process for its production |
| 02/18/1993 | WO1993003500A1 Method of forming a resistive element in a semiconductor device and a sram cell made thereby |
| 02/18/1993 | WO1993003499A1 Anti-fuse structures and methods for making same |
| 02/18/1993 | WO1993003486A1 Bipolar memory cell with isolated pnp load |
| 02/18/1993 | DE4226996A1 Semiconductor dynamic random access memory device mfr. - using capacitor contained in channel in substrate surface with active semiconductor zone coupled to bit line |
| 02/18/1993 | DE4226389A1 Storage capacitor enveloping bit-line of DRAM device - allows straight-line layout of bit-line(s) and increases capacitor area resulting in easier mfr. and better margins |
| 02/17/1993 | EP0527641A2 H-bridge flyback recirculator |
| 02/17/1993 | EP0527604A2 Method of coupling an end of optical fibre to a waveguide formed on a substrate |
| 02/17/1993 | EP0527563A2 Color scan arrays |
| 02/17/1993 | EP0527342A1 Differential capacitor structure and fabricating method |
| 02/17/1993 | EP0527337A1 Semiconductor integrated circuit |
| 02/17/1993 | EP0353271B1 Analog-to-digital converter made with focused ion beam technology |
| 02/16/1993 | US5187715 Quantum well optical device |
| 02/16/1993 | US5187683 Method for programming EEPROM memory arrays |
| 02/16/1993 | US5187638 Barrier layers for ferroelectric and pzt dielectric on silicon |
| 02/16/1993 | US5187637 Monolithic high-voltage capacitor |
| 02/16/1993 | US5187636 Having high permittivity; capacitors; silicon, silica and silicon nitride layers |
| 02/16/1993 | US5187595 Photoelectric conversion device having improved illumination and information processing apparatus mounting the device |
| 02/16/1993 | US5187583 Solid state imager which reduces the noise and improves the sensitivity |
| 02/16/1993 | US5187566 Semiconductor memory and method of manufacturing the same |
| 02/16/1993 | US5187563 Photoelectric conversion device with Al/Cr/TCO electrode |
| 02/16/1993 | US5187562 Input protection structure for integrated circuits |
| 02/16/1993 | US5187561 Metal single crystal line having a particular crystal orientation |
| 02/16/1993 | US5187559 Semiconductor device and process for producing same |
| 02/16/1993 | US5187557 Having chemical resistance, low resistance and no leakage current increases |
| 02/16/1993 | US5187556 Cmos master slice |
| 02/16/1993 | US5187555 Semiconductor integrated circuit of standard cell system |
| 02/16/1993 | US5187550 Semiconductor device |
| 02/16/1993 | US5187549 Dynamic random access memory device including stacked capacitors each having a lower electrode aligned with an upper electrode without tolerance and process of fabrication thereof |
| 02/16/1993 | US5187548 Stacked capacitor of a dram cell with fin-shaped electrodes having supporting layers |
| 02/16/1993 | US5187429 Reference voltage generator for dynamic random access memory |
| 02/16/1993 | US5187380 Low capacitance X-ray radiation detector |
| 02/16/1993 | US5187377 LED array for emitting light of multiple wavelengths |
| 02/16/1993 | US5187369 High sensitivity, high resolution, solid state x-ray imaging device with barrier layer |
| 02/16/1993 | US5187122 Process for fabricating an integrated circuit using local silicide interconnection lines |
| 02/16/1993 | US5187114 Method of making SRAM cell and structure with polycrystalline P-channel load devices |
| 02/16/1993 | US5187110 Making high frequency amplifiers |
| 02/16/1993 | US5187109 Forming on surface of substrate a layer of semiconductor material of opposite conductivity type, forming insulator layer, depositing polycrystalline silicon, doping, annealing |
| 02/16/1993 | US5187108 Method of manufacturing a bipolar transistor |