| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 05/04/1993 | US5208469 Wafer scale integrated circuit and method of forming signal propagation path therein |
| 05/04/1993 | US5208178 Testing macrocells before connecting wires |
| 05/04/1993 | US5208177 Etching trench between access lines; severing underlying diffusion region; integrated circuits, semiconductors |
| 05/04/1993 | US5208175 Forming pattern of floating and control gate electrodes; thickened edge of dielectric film |
| 05/04/1993 | US5208174 Method for manufacturing a nonvolatile semiconductor memory device |
| 05/04/1993 | US5208172 Method for forming a raised vertical transistor |
| 05/04/1993 | US5208171 Process for preparing BiCMOS semiconductor device |
| 05/04/1993 | US5208168 Semiconductor device having punch-through protected buried contacts and method for making the same |
| 05/04/1993 | CA1317363C Dual mode light emitting diode/detector diode for optical fiber transmission lines |
| 05/04/1993 | CA1317344C Bicmos positive supply voltage reference |
| 04/29/1993 | WO1993008610A1 Voltage variable capacitor having amorphous dielectric film |
| 04/29/1993 | WO1993008604A1 P-channel transistor |
| 04/29/1993 | WO1993008603A1 Soi cmos device having body extension for providing sidewall channel stop and body tie |
| 04/29/1993 | WO1993008602A1 Circuit for protecting a semiconductor device from voltage produced by discharges of static electricity |
| 04/29/1993 | WO1993008598A1 Method for optimizing delay time |
| 04/29/1993 | WO1993008578A1 Voltage variable capacitor |
| 04/29/1993 | DE4233236A1 Semiconductor component with retrograde trough structure - has semiconductor substrate with insulating and separating film on main surface for element regions |
| 04/29/1993 | DE4134879A1 P-kanal-transistor P-channel transistor |
| 04/28/1993 | EP0539312A2 Isolated films using an air dielectric |
| 04/28/1993 | EP0539311A2 Buried air dielectric isolation of silicon islands |
| 04/28/1993 | EP0539233A1 Method of manufacturing semiconductor device |
| 04/28/1993 | EP0539184A2 Non-volatile semiconductor memory |
| 04/28/1993 | EP0539110A1 Integrated circuit having a boosted node |
| 04/28/1993 | EP0538886A1 Signal processor having avalanche photodiodes |
| 04/28/1993 | EP0538878A2 Light detecting device |
| 04/28/1993 | EP0538807A1 Semiconductor integrated circuit device having additional capacitor effectively decreasing parasitic capacitance coupled with resistor |
| 04/28/1993 | EP0538752A1 Semiconductor input protective device against external surge voltage |
| 04/28/1993 | EP0538507A1 Protection circuit for connection contacts of monolithic integrated circuits |
| 04/28/1993 | EP0538460A1 Advanced solar cell |
| 04/28/1993 | EP0538279A1 Process for the thin etching of substrates. |
| 04/27/1993 | US5206829 Thin film ferroelectric electro-optic memory |
| 04/27/1993 | US5206788 Series ferroelectric capacitor structure for monolithic integrated circuits and method |
| 04/27/1993 | US5206787 Capacitor and method of fabricating same |
| 04/27/1993 | US5206778 Sense circuit for on-chip thermal shutdown |
| 04/27/1993 | US5206749 Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
| 04/27/1993 | US5206585 Methods for testing integrated circuit devices |
| 04/27/1993 | US5206584 Test circuit for testing a three-state output buffer gate in a semiconductor integrated circuit |
| 04/27/1993 | US5206583 Latch assisted fuse testing for customized integrated circuits |
| 04/27/1993 | US5206535 Semiconductor device structure |
| 04/27/1993 | US5206533 Static memory cell |
| 04/27/1993 | US5206530 Charge transfer device having multiple registers |
| 04/27/1993 | US5206529 Semiconductor integrated circuit device |
| 04/27/1993 | US5206526 Staircase bandgap photodetector using recombination |
| 04/27/1993 | US5206184 Method of making single layer personalization |
| 04/27/1993 | US5206182 Prevent inversion of sidewall of trenches |
| 04/22/1993 | DE4234992A1 CMOS IC esp. DRAM, prodn. process - involves ten process temp. changes and masking steps, and gives high yield with reduced cost |
| 04/22/1993 | DE4234499A1 CCD image sensor prodn. avoiding dry etching damage and thus image blurring - comprises forming 2nd conductivity type layer over 1st conductivity type semiconductor substrte, forming 1st impurity region acting as light collecting element and 2nd impurity region acting as charge transfer element etc. |
| 04/22/1993 | DE4233777A1 Mfg. semiconductor with active region on insulating layer - heating non-monocrystalline layer with laser to form monocrystalline structure of specific temperature distribution, and producing semiconductor layer island via selective etching |
| 04/21/1993 | EP0538239A1 Circuit for the voltage protection of the supply voltage of a CMOS integrated circuit |
| 04/21/1993 | EP0538054A1 Semiconductor integrate circuit device having N- and P- type insulated-gate field effect transistors and its production method |
| 04/21/1993 | EP0537885A1 Programmable logic devices |
| 04/21/1993 | EP0537852A1 Exposure device and printer with an LED array |
| 04/21/1993 | EP0537843A1 A two terminal semiconductor device |
| 04/21/1993 | EP0537791A1 Semiconductor memory |
| 04/21/1993 | EP0537782A1 Semicustom-made integrated circuit device with resistors over transistor array |
| 04/21/1993 | EP0537529A1 Electroluminescent display panel |
| 04/21/1993 | EP0537514A2 Optoelectronic integrated circuit |
| 04/21/1993 | EP0537203A1 Device with self-amplifying dynamic mos transistor storage cells. |
| 04/20/1993 | US5204990 Memory cell with capacitance for single event upset protection |
| 04/20/1993 | US5204988 Mos semiconductor device having a surge protecting element |
| 04/20/1993 | US5204977 Apparatus and method of automatic gain control in a receiver |
| 04/20/1993 | US5204842 Semiconductor memory with memory unit comprising a plurality of memory blocks |
| 04/20/1993 | US5204837 Semiconductor memory device having test mode |
| 04/20/1993 | US5204835 Eprom virtual ground array |
| 04/20/1993 | US5204834 Static semiconductor memory device |
| 04/20/1993 | US5204762 Image reading device |
| 04/20/1993 | US5204554 Partial isolation of power rails for output buffer circuits |
| 04/20/1993 | US5204553 Field effect transistor circuit |
| 04/20/1993 | US5204546 Ratioed capacitances in integrated circuits |
| 04/20/1993 | US5204544 Photoelectric conversion device with stabilizing electrode |
| 04/20/1993 | US5204543 Lateral type semiconductor device having a structure for eliminating turning-on of parasitic mos transistors formed therein |
| 04/20/1993 | US5204542 Nonvolatile semiconductor memory device of shared contact scheme not having inclined wiring |
| 04/20/1993 | US5204541 Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices |
| 04/20/1993 | US5204520 Avalanche photodiode array integrated with etched silicon divider |
| 04/20/1993 | US5204519 Close-contact image sensing device having a reset switch |
| 04/20/1993 | US5204286 Method of making self-aligned contacts and vertical interconnects to integrated circuits |
| 04/20/1993 | US5204282 Semiconductor circuit structure and method for making the same |
| 04/20/1993 | US5204281 Forming trengh in substrate, lining with dielectric, depositiong three silicon layers, etching, lining with dielectric, depositing gate polysilicon |
| 04/20/1993 | US5204280 Process for fabricating multiple pillars inside a dram trench for increased capacitor surface |
| 04/20/1993 | US5204279 Using doped polysilicon layer with barrier as interconnect layer; no P-N junction formed |
| 04/20/1993 | US5204166 Thick film resistor composition, hybrid IC using the composition, and process for producing the hybrid IC |
| 04/15/1993 | WO1993007645A1 Insulated-gate bipolar transistor |
| 04/15/1993 | WO1993007644A1 Structure for suppression of field inversion caused by charge build-up in the dielectric |
| 04/15/1993 | WO1993007643A1 Gallium arsenide mesfet imager |
| 04/15/1993 | WO1993007642A1 Dipolar monolithically integrated circuit |
| 04/15/1993 | WO1993007641A1 Semiconductor integrated circuit device and manufacture thereof |
| 04/15/1993 | DE4233792A1 Substrate fox matrix liquid crystal element - has insulation layer covering switch element and image element electrode, and separating second image element electrode |
| 04/15/1993 | DE4233790A1 Electronically-erasable programmable read-only memory - has selection transistor in semiconductor substrate between 2 memory transistors |
| 04/15/1993 | DE4233486A1 Trench capacitor memory cell mfr. - + with active zone providing transistor and field region in which trench capacitor is provided in substrate surface |
| 04/15/1993 | DE4232817A1 Semiconductor memory cell with capacitor - set between end and primary metallising film above bit line |
| 04/15/1993 | DE4133245A1 Bipolare monolithisch integrierte schaltung Bipolar monolithically integrated circuit |
| 04/14/1993 | EP0536972A2 An integrated circuit device having improved substrate capacitance isolation |
| 04/14/1993 | EP0536902A1 Interconnect and resistor for integrated circuits |
| 04/14/1993 | EP0536790A2 Method for producing semiconductor articles |
| 04/14/1993 | EP0536788A1 Method of producing semiconductor substrate |
| 04/14/1993 | EP0536688A2 MOS transistor and charge detector using same |
| 04/14/1993 | EP0536668A2 Vertical semiconductor device |
| 04/14/1993 | EP0536431A1 Method for working a thin film device by laser |
| 04/14/1993 | EP0536243A1 Thin-film airflow sensor with additional heating element |
| 04/14/1993 | EP0279814B1 Thermally insulative and electrically conductive interconnect and process for making same |