| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 02/21/1996 | EP0697766A1 Buffer circuit with wide dynamic range |
| 02/21/1996 | EP0697744A1 Organic electroluminescent device |
| 02/21/1996 | EP0697743A1 Avalanche photodiode joined with with an integrated circuit package and method of fabrication |
| 02/21/1996 | EP0697735A1 Single twist layout and method for paired line conductors of integrated circuits |
| 02/21/1996 | EP0697734A1 Electrostatic discharge protection circuit |
| 02/21/1996 | EP0697733A2 Electrostatic discharge protection device and method of forming |
| 02/21/1996 | EP0697720A1 A conductive amorphous-nitride barrier layer for high dielectric-constant material electrodes |
| 02/21/1996 | EP0697719A2 Microelectronic structure including a conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes and method of fabricating the same |
| 02/21/1996 | EP0697713A1 Silicon on insulator substrate and method of manufacturing the same |
| 02/21/1996 | EP0697701A2 An improved electronic memory and methods for making and using the same |
| 02/21/1996 | EP0696907A1 Independent photoelectric artificial retina device and method |
| 02/21/1996 | CN1031087C Method of improved solution growth of silicon film |
| 02/20/1996 | US5493572 Semiconductor integrated circuit with voltage limiter having different output ranges for normal operation and performing of aging tests |
| 02/20/1996 | US5493506 Integrated circuit device and method of designing same |
| 02/20/1996 | US5493233 MOSFET circuit apparatus with avalanche breakdown prevention means |
| 02/20/1996 | US5493149 Transistor device with increased breakdown voltage |
| 02/20/1996 | US5493148 Semiconductor device whose output characteristic can be adjusted by functional trimming |
| 02/20/1996 | US5493147 Antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof |
| 02/20/1996 | US5493144 Field progammable device with contact openings |
| 02/20/1996 | US5493143 Solid color image pickup device |
| 02/20/1996 | US5493142 Input/output transistors with optimized ESD protection |
| 02/20/1996 | US5493139 Electrically erasable PROM (E2 PROM) with thin film peripheral transistor |
| 02/20/1996 | US5493137 Semiconductor device |
| 02/20/1996 | US5493135 Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density |
| 02/20/1996 | US5493133 PNP punchthrough-assisted protection device for special applications in CMOS technologies |
| 02/20/1996 | US5493130 Integrated circuitry having an electrically conductive sidewall link positioned over and electrically interconnecting respective outer sidewalls of two conductive layers |
| 02/20/1996 | US5492865 Method of making structure for suppression of field inversion caused by charge build-up in the dielectric |
| 02/20/1996 | US5492859 Method for producing semiconductor device substrate by bonding a porous layer and an amorphous layer |
| 02/20/1996 | US5492857 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 02/20/1996 | US5492856 Method of forming a semiconductor device having a LC element |
| 02/20/1996 | US5492854 Method of manufacturing semiconductor device |
| 02/20/1996 | US5492853 Method of forming a contact using a trench and an insulation layer during the formation of a semiconductor device |
| 02/20/1996 | US5492852 Method for fabricating a solid imaging device having improved smear and breakdown voltage characteristics |
| 02/20/1996 | US5492851 Method for fabricating attached capacitor cells in a semiconductor device having a thin film transistor |
| 02/20/1996 | US5492850 Method for fabricating a stacked capacitor cell in semiconductor memory device |
| 02/20/1996 | US5492849 Method of forming a capacitor in a semiconductor device |
| 02/20/1996 | US5492848 Stacked capacitor process using silicon nodules |
| 02/20/1996 | US5492846 Fabrication method of nonvolatile semiconductor memory device |
| 02/15/1996 | WO1996004684A1 Ccd x-ray densitometer system |
| 02/15/1996 | WO1996004683A1 Method of manufacturing a three-dimensional circuit |
| 02/15/1996 | WO1996000452A3 Charge coupled device, and imaging device comprising such a charge coupled device |
| 02/15/1996 | CA2195652A1 Ccd x-ray densitometer system |
| 02/14/1996 | EP0696820A1 Solid-state imaging device and method of manufacturing the same |
| 02/14/1996 | EP0696819A1 Diamond-like carbon for use in VLSI and ULSI interconnect systems |
| 02/14/1996 | EP0696802A2 Precharged bit decoder and sense amplifier with integrated latch usable in pipelined memories |
| 02/14/1996 | EP0696747A2 Integrated semiconductor optical waveguide device and fabrication methode |
| 02/14/1996 | CN1116773A Semiconductor integrated circuit and manufacturing method therefor |
| 02/13/1996 | US5491654 Static random access memory device having thin film transistor loads |
| 02/13/1996 | US5491435 Data sensing circuit with additional capacitors for eliminating parasitic capacitance difference between sensing control nodes of sense amplifier |
| 02/13/1996 | US5491358 Semiconductor device having an isolating portion between two circuit regions |
| 02/13/1996 | US5491357 Integrated structure current sensing resistor for power MOS devices, particularly for overload self-protected power MOS devices |
| 02/13/1996 | US5491356 Capacitor structures for dynamic random access memory cells |
| 02/13/1996 | US5491354 Floating gate charge detection node |
| 02/13/1996 | US5491353 Configurable cellular array |
| 02/13/1996 | US5491109 Method for the construction of highly integrated semiconductor connecting device |
| 02/13/1996 | US5491108 Method of producing semiconductor integrated circuit device having interplayer insulating film covering substrate |
| 02/13/1996 | US5491105 LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
| 02/13/1996 | US5491104 Method for fabricating DRAM cells having fin-type stacked storage capacitors |
| 02/13/1996 | US5491103 Method for manufacturing a capacitor structure of a semiconductor memory device |
| 02/13/1996 | US5491102 Depositing a layer of ferroelectric material on ceramic electrode to produce an interface; annealing |
| 02/13/1996 | US5491101 Manufacturing method of non-volatile semiconductor memory devices |
| 02/08/1996 | WO1996003773A1 Radiation imaging panel |
| 02/08/1996 | WO1996003770A1 Semiconductor device with integrated rc network and schottky diode |
| 02/08/1996 | WO1995035581A3 Non-volatile sidewall memory cell method of fabricating same |
| 02/08/1996 | DE19525756A1 Feldisolationsvorrichtung mit schwebendem Steueranschluß und Verfahren zur Herstellung der Vorrichtung Field isolation device floating control terminal and method for manufacturing the device |
| 02/08/1996 | DE19507816A1 Semiconductor device having high reliability |
| 02/08/1996 | CA2196206A1 Semiconductor device with integrated rc network and schottky diode |
| 02/07/1996 | EP0696064A2 Monolithically integrated VLSI optoelectronic circuits and a method of fabricating the same |
| 02/07/1996 | EP0696062A2 CMOS semiconductor device and manufacturing method thereof |
| 02/07/1996 | EP0696060A2 Method of making a wiring and a contact structure of a semiconductor device |
| 02/07/1996 | EP0696059A2 Semiconductor device having trenches and method of forming trenches |
| 02/07/1996 | EP0696058A2 Structure and method for reducing parasitic leakage in a memory array with merged isolation and node trench construction |
| 02/07/1996 | EP0696052A2 Non-random sub-lithography vertical stack capacitor |
| 02/07/1996 | EP0696050A1 EPROM and Flash-EEPROM non-volatile memory and method of manufacturing the same |
| 02/07/1996 | EP0695945A2 Millimeter wave imager device using pyroelectric effect |
| 02/07/1996 | EP0397889B1 Light-emitting element |
| 02/06/1996 | US5490171 Single-port network node transceiver with powered-down protection |
| 02/06/1996 | US5490116 Semiconductor memory device including a component having improved breakdown voltage characteristics |
| 02/06/1996 | US5490106 Semiconductor read only memory device with memory cells implemented by inverted thin film transistors |
| 02/06/1996 | US5490103 Signal terminal structure for macro cells and an associated connection method |
| 02/06/1996 | US5489994 Integrated apertures on a full frame CCD image sensor |
| 02/06/1996 | US5489993 Original image reading device |
| 02/06/1996 | US5489860 Semiconductor circuit having improved layout pattern |
| 02/06/1996 | US5489798 Opto-electronic integrated circuit |
| 02/06/1996 | US5489797 Local interconnect structure |
| 02/06/1996 | US5489796 Integrated circuit resistor comprising amorphous silicon |
| 02/06/1996 | US5489795 Semiconductor integrated circuit device having double well structure |
| 02/06/1996 | US5489794 Semiconductor device |
| 02/06/1996 | US5489793 Semiconductor device having an evaluation device and method of fabricating same |
| 02/06/1996 | US5489787 Semiconductor device having an insulated gate field effect transistor and exhibiting thyristor action |
| 02/06/1996 | US5489547 Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient |
| 02/06/1996 | US5489545 Method of manufacturing an integrated circuit having a charge coupled device and a MOS transistor |
| 02/06/1996 | US5489544 Method for making a high capacitance multi-level storage node for high density TFT load SRAMS with low soft error rates |
| 02/06/1996 | CA2017743C Ultra-tall indium or alloy bump array for ir detector hybrids and micro-electronics |
| 02/01/1996 | WO1996002940A1 Device reliability of mos devices using silicon rich plasma oxide films |
| 02/01/1996 | WO1996002937A2 An image detector for sensing x-ray radiation |
| 02/01/1996 | DE4426307A1 Integrated circuit with gate oxide and ESD protection for DMOS transistor |
| 01/31/1996 | EP0694977A2 SOI-type semiconductor device with suppressed spread of depletion region |
| 01/31/1996 | EP0694976A2 Method of manufacturing an integrated circuit having p-MOSFETs with different channel widths |
| 01/31/1996 | EP0694975A1 Post-fabrication repair structure and method for thin film imager devices |