Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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06/06/1996 | WO1996017385A1 Thin film transistor for liquid crystal display and method for fabricating the same |
06/06/1996 | WO1996017384A1 High density contactless flash eprom array using channel erase |
06/06/1996 | WO1996017379A1 A method and system for providing an integrated circuit device that allows for a high field threshold voltage utilizing oxide spacers |
06/06/1996 | WO1996017377A1 Besoi wafer and process for stripping outer edge thereof |
06/06/1996 | WO1996017104A1 A method of depositing tungsten nitride using a source gas comprising silicon |
06/06/1996 | WO1996017102A1 Method for making electrical devices from ion-implanted conductive polymers |
06/06/1996 | WO1996010845A3 Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier |
06/06/1996 | CA2205956A1 A capacitor for an integrated circuit and method of formation thereof, and a method of adding on chip capacitors to an integrated circuit |
06/05/1996 | EP0715411A2 Low-power-dissipation CMOS circuits |
06/05/1996 | EP0715409A1 Circuit for limiting the output voltage of a power transistor |
06/05/1996 | EP0715356A1 Bipolar transistor and manufacturing method thereof |
06/05/1996 | EP0715350A2 Method of forming a shallow trench, for isolating adjacent deep trenches, using a silicidation step |
06/05/1996 | EP0715345A1 Integrated circuit capacitor fabrication |
06/05/1996 | EP0715344A2 Process for forming gate oxides possessing different thicknesses on a semiconductor substrate |
06/05/1996 | EP0715310A2 Improvements in or relating to memory devices |
06/05/1996 | EP0715178A2 Integrated circuit comprising a testing pad |
06/05/1996 | EP0714554A1 Non-volatile sidewall memory cell method of fabricating same |
06/05/1996 | EP0626098B1 Method of producing a contact with a trench-condenser electrode |
06/05/1996 | EP0463067B1 Fermi threshold field effect transistor |
06/05/1996 | DE4445566A1 Optical integrated circuit prodn. process |
06/05/1996 | CN1123956A Method of fabricating semiconductor integrated-circuit device |
06/05/1996 | CN1031969C Common bias circuit for plurality of discreteic's each having their own bias circuitry |
06/04/1996 | US5524095 Semiconductor memory device with a substrate bias voltage generation circuit as a power supply of a word line driver circuit |
06/04/1996 | US5524093 Semiconductor memory device having an arrangement to reduce stresses on non-selected ferroelectric capacitors while achieving high integration |
06/04/1996 | US5523976 Non-volatile semiconductor memory device having a memory cell group operative as a redundant memory cell group for replacement of another group |
06/04/1996 | US5523969 Electrically erasable programmable non-volatile semiconductor memory device and method for manufacturing the same |
06/04/1996 | US5523968 IC semiconductor memory devices with maintained stable operation and lower operating current characteristics |
06/04/1996 | US5523966 Memory cell and a memory device having reduced soft error |
06/04/1996 | US5523965 Semiconductor memory device and method of manufacturing same |
06/04/1996 | US5523964 Ferroelectric non-volatile memory unit |
06/04/1996 | US5523613 Band gap reference power supply device |
06/04/1996 | US5523611 Integrated semiconductor array combination with standard elements |
06/04/1996 | US5523610 Photodiode array and method for manufacturing the same |
06/04/1996 | US5523609 Solid-state image sensing device having a vertical transfer line and a charge transfer region with buffer layer containing hydrogen between light shielding layer and insulating layer |
06/04/1996 | US5523608 Solid state imaging device having a solid state image sensor and its peripheral IC mounted on one package |
06/04/1996 | US5523607 Integrated current-limiter device for power MOS transistors |
06/04/1996 | US5523606 BiCMOS semiconductor device having SiGe heterojunction and Si homo-junction transistors |
06/04/1996 | US5523602 Multi-layered structure having single crystalline semiconductor film formed on insulator |
06/04/1996 | US5523600 Active device constructed in opening formed in insulation layer |
06/04/1996 | US5523598 Semiconductor integrated circuit device |
06/04/1996 | US5523597 Electronic device achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10 |
06/04/1996 | US5523596 Semiconductor device having capacitor and manufacturing method therefor |
06/04/1996 | US5523595 Humidity resistant titanium oxynitride film; corroosion resistance |
06/04/1996 | US5523593 Compound semiconductor integrated circuit and optical regenerative repeater using the same |
06/04/1996 | US5523592 Layered structure forms light-emitting region |
06/04/1996 | US5523591 Assembly of led array and lens with engineered light output profile and method for making the assembly |
06/04/1996 | US5523590 LED array with insulating films |
06/04/1996 | US5523570 Double direct injection dual band sensor readout input circuit |
06/04/1996 | US5523557 Optoelectronic device integrating a light guide and a photodetector having two diodes arranged side by side on a semiconductor substrate |
06/04/1996 | US5523554 Solid state image converter with two oppositely connected diodes wherein the photodiode is reset by being forward biased |
06/04/1996 | US5523542 Method for making dynamic random access memory cell capacitor |
06/04/1996 | US5523257 Mis semiconductor device and method of fabricating the same |
06/04/1996 | US5523254 Method for production of SOI transistor device and SOI transistor |
06/04/1996 | US5523248 Method for manufacturing MOS transistors with high breakdown voltage |
06/04/1996 | US5523247 Method of fabricating self-aligned planarized well structures |
06/04/1996 | US5523241 Method of making infrared detector with channel stops |
06/03/1996 | CA2160185A1 Low-power-dissipation cmos circuits |
05/30/1996 | WO1996016447A1 Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes |
05/30/1996 | WO1996016445A1 Integrated circuit structure with security feature |
05/30/1996 | WO1996016443A1 Semiconductor device with a carrier body on which a substrate with a semiconductor element is fastened by means of a glue layer and on which a pattern of conductor tracks is fastened |
05/30/1996 | WO1996016439A1 CONSTRUCTING CMOS VERTICALLY MODULATED WELLS BY CLUSTERED MeV BURIED IMPLANTED LAYER FOR LATERAL ISOLATION |
05/30/1996 | WO1996016438A1 Method of forming a silicon-on-insulator (soi) material having a high degree of thickness uniformity |
05/30/1996 | WO1996016378A1 Active security device with electronic memory |
05/30/1996 | DE4441766A1 Cryo-electric circuit with high temp. superconductor |
05/30/1996 | DE4441724A1 Modified silicon-on-insulator substrate for MOSFET back gate control |
05/30/1996 | DE19543089A1 Electric short circuit at pn-junction prevention method for CMOS type EEPROM |
05/30/1996 | DE19541469A1 Semiconductor device with mask-programmable memory |
05/30/1996 | DE19507802C1 Semiconductor body high integration meander-type resistor mfr. |
05/29/1996 | EP0714139A1 Break-over triggered two-terminal device with controlled sensitivity |
05/29/1996 | EP0714137A1 Bipolar transistor on SOI substrate |
05/29/1996 | EP0714135A1 Integrated device with a structure for protection against high electric fields |
05/29/1996 | EP0714134A1 Single-polysilicon CMOS active pixel |
05/29/1996 | EP0714133A1 Twin-well manufacturing process for an EEPROM integrated device with reduced body effect |
05/29/1996 | EP0714131A1 Inductive signal transfer device between the chip layers of a vertical integrated circuit |
05/29/1996 | EP0714130A1 Capacitive signal transfer device between the chip layers of a vertical integrated circuit |
05/29/1996 | EP0714124A2 Method for bonding a first substrate to a second substrate and application of the method to the fabrication of a three dimensional circuit device |
05/29/1996 | EP0714101A2 An integrated circuit memory device with voltage boost |
05/29/1996 | EP0713609A1 Stack of ic chips as substitute for single ic chip |
05/29/1996 | EP0704069A4 Parallel optical interconnect |
05/29/1996 | CN1123472A Nonvolatile semiconductor device having side wall split gate for compensating for over-erasing operation |
05/29/1996 | CN1123470A Insulated-gate device (IG device) having narrowbandgap-source structure and method of manufacturing the same |
05/29/1996 | CN1123463A Method for producing semiconductor device |
05/28/1996 | US5522000 Providing optical coupling with single crystal substrate mounted electro-optic transducers |
05/28/1996 | US5521994 Semiconductor optical waveguide-integrated light-receiving device |
05/28/1996 | US5521871 Voltage boosting circuit of a semiconductor memory circuit |
05/28/1996 | US5521866 Non-volatile semiconductor memory device having floating gate |
05/28/1996 | US5521865 Non-volatile semiconductor memory device for storing multi-value data |
05/28/1996 | US5521862 Apparatus and method for storing information in magnetic fields |
05/28/1996 | US5521861 High-speed high-density SRAM cell |
05/28/1996 | US5521860 CMOS static memory |
05/28/1996 | US5521859 Semiconductor memory device having thin film transistor and method of producing the same |
05/28/1996 | US5521858 Semiconductor device |
05/28/1996 | US5521783 Electrostatic discharge protection circuit |
05/28/1996 | US5521639 Solid-state imaging apparatus including a reference pixel in the optically-black region |
05/28/1996 | US5521546 Voltage boosting circuit constructed on an integrated circuit substrate, as for a semiconductor memory device |
05/28/1996 | US5521541 Semiconductor device capable of reducing a clock skew in a plurality of wiring pattern blocks |
05/28/1996 | US5521421 Semiconductor device |
05/28/1996 | US5521419 Semiconductor device having field shield element isolating structure and method of manufacturing the same |
05/28/1996 | US5521417 Semiconductor device comprising a non-volatile memory formed on a data processor |
05/28/1996 | US5521416 Semiconductor device having gate electrode and impurity diffusion layer different in conductivity type and method of manufacturing the same |