Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
01/1997
01/07/1997US5591656 Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor
01/07/1997US5591655 Process for manufacturing a vertical switched-emitter structure with improved lateral isolation
01/02/1997EP0751573A1 Integrated power circuit and corresponding manufacturing process
01/02/1997EP0751572A2 High voltage integrated circuit and level shift unit
01/02/1997EP0751571A2 A multilayer hybrid circuit
01/02/1997EP0751560A1 Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding IC
01/02/1997EP0751559A1 Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC
01/02/1997EP0751558A1 A method of manufacturing integrated circuits
01/02/1997EP0751409A2 Integrated waveguide having an internal optical grating
01/02/1997EP0750793A1 Silicon controlled rectifier for esd protection
01/02/1997DE19625661A1 Circuit element value, e.g. resistance, adjusting control apparatus for integrated circuit
01/02/1997DE19625660A1 Semiconductor memory component for EEPROM with NAND cell matrix
01/02/1997DE19624698A1 Semiconductor memory device
01/02/1997DE19547453A1 Microcomputer system with synchronisation facility
01/01/1997CN1139277A Flash eeprom cell and method of making the same
12/1996
12/31/1996US5590361 Microprocessor having an effective BiCMOS extra multiple input complex logic circuit
12/31/1996US5590085 Column redundancy device for semiconductor memory
12/31/1996US5590077 Semiconductor memory device
12/31/1996US5590072 Nonvolatile semiconductor memory device
12/31/1996US5590068 Ultra-high density alternate metal virtual ground ROM
12/31/1996US5590050 Device for aid in integrated circuit design that reduces the number of cells in a circuit representation
12/31/1996US5589962 Active matrix display device using aluminum alloy in scanning signal line or video signal line
12/31/1996US5589847 Switched capacitor analog circuits using polysilicon thin film technology
12/31/1996US5589761 Dual polarity voltage regulator circuits and methods for providing voltage regulation
12/31/1996US5589709 Lead frame capacitor and capacitively-coupled isolator circuit using same
12/31/1996US5589707 Semiconductor chip
12/31/1996US5589706 Fuse link structures through the addition of dummy structures
12/31/1996US5589705 Real-time semiconductor radiation detector
12/31/1996US5589702 High value gate leakage resistor
12/31/1996US5589700 Semiconductor nonvolatile memory
12/31/1996US5589699 Electrically erasable programmable non-volatile semiconductor memory device having select gates and small number of contact holes
12/31/1996US5589698 Solid state imaging device having sliding potential gradient
12/31/1996US5589697 Charge pump circuit with capacitors
12/31/1996US5589695 High-performance high-voltage device structures
12/31/1996US5589692 Sub-nanoscale electronic systems and devices
12/31/1996US5589423 Masking first part of silicide blocking layer overlying dielectric layer, etching exposed portion, removing mask, etching blocking layer and dielectric layer, forming silicide layer on exposed portion of substrate
12/31/1996US5589419 Process for fabricating semiconductor device having a multilevel interconnection
12/31/1996US5589416 Process for forming integrated capacitors
12/31/1996US5589414 Method of making mask ROM with two layer gate electrode
12/31/1996US5589413 Method of manufacturing self-aligned bit-line during EPROM fabrication
12/31/1996US5589412 Method of making increased-density flash EPROM that utilizes a series of planarized, self-aligned, intermediate strips of conductive material to contact the drain regions
12/31/1996US5589410 An integrated semiconductor device having a buried semiconductor layer and fabrication method thereof
12/31/1996US5589408 Thermally annealing a metal-semiconductor contact with semiconductor substrate
12/31/1996US5589404 Monolithically integrated VLSI optoelectronic circuits and a method of fabricating the same
12/28/1996CA2177203A1 Integrated waveguide having an internal optical grating
12/27/1996WO1996042112A1 Semiconductor integrated circuit device, production thereof, and semiconductor wafer
12/27/1996EP0750354A2 Semiconductor device having capacitor
12/27/1996EP0750352A2 Semiconductor device layout
12/27/1996EP0750350A2 Solid state pixel array with supplementary crossover structure
12/27/1996EP0750349A2 Imager device with integral address line repair segments
12/27/1996EP0750348A1 Semiconductor device with electromagnetic radiation reduced
12/27/1996EP0750347A1 Dynamic random access memory device and method of producing the same
12/27/1996EP0750346A1 Monolithic assembly of semiconductor components including a high-speed diode
12/27/1996EP0750343A1 Fuse with ESD protection
12/27/1996EP0750242A2 Semiconductor device having an output circuit for transmitting low-voltage differential signals
12/27/1996EP0749638A1 Semiconductor memory devices and methods of producing such
12/27/1996EP0749632A1 Electrostatic discharge protection of isfet sensors
12/25/1996CN1138901A 辐射探测器 Radiation Detectors
12/25/1996CN1138752A Optical detecting device and its mfg. method
12/25/1996CN1138751A Two dimesional organic light emitting diode array for high density information image manifestation apparatus
12/25/1996CN1138750A Method of making mask ROM
12/25/1996CN1138749A Device isolation method
12/25/1996CN1138744A Method for fabricating semiconductor device
12/25/1996CN1033672C Thin film electrical component
12/24/1996US5587963 Semiconductor memory device
12/24/1996US5587960 Integrated circuit memory device with voltage boost
12/24/1996US5587958 Semiconductor memory device including a boost potential generation circuit
12/24/1996US5587948 Nonvolatile semiconductor memory with NAND structure memory arrays
12/24/1996US5587947 Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase
12/24/1996US5587946 Method of reading, erasing and programming a nonvolatile flash-EEPROM memory arrray using source line switching transistors
12/24/1996US5587945 CMOS EEPROM cell with tunneling window in the read path
12/24/1996US5587943 Nonvolatile magnetoresistive memory with fully closed flux operation
12/24/1996US5587612 Semiconductor device having semiconductor active and dummy regions with the dummy regions lower in height than the active regions
12/24/1996US5587611 Coplanar X-ray photodiode assemblies
12/24/1996US5587607 Semiconductor integrated circuit device having improvement arrangement of pads
12/24/1996US5587604 Semiconductor structure
12/24/1996US5587603 Two-transistor zero-power electrically-alterable non-volatile latch
12/24/1996US5587600 Series MOS ROM with tapered oxide side walls
12/24/1996US5587599 Bipolar transistor and manufacturing method
12/24/1996US5587598 Semiconductor device with charge-up preventing function
12/24/1996US5587596 Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range
12/24/1996US5587589 Two dimensional organic light emitting diode array for high density information image manifestation apparatus
12/24/1996US5587576 Solid-state image-sensing device and bar code reader operable with low voltage power supplies and using two charge transfer devices of different sizes
12/24/1996US5587340 Method of forming a semiconductor device in a substrate depression
12/24/1996US5587333 Capacitor in an integrated function block or an integrated circuit having high capacitance, a method for manufacturing said capacitor and utilizing of said capacitor as an integrated decoupling capacitor
12/24/1996US5587332 Method of making flash memory cell
12/24/1996US5587329 Method for fabricating a switching transistor having a capacitive network proximate a drift region
12/24/1996US5587090 Forming parylene, dry-etch selective mask layers, a photosensitive layer, patterning above layers, ion milling the formed pattern in ceramic substrate
12/24/1996CA2176451A1 Substrate carriers for electroluminescent displays
12/19/1996WO1996041464A1 Apparatus for reading and processing image information
12/19/1996WO1996041412A2 Monolithic class d amplifier
12/19/1996WO1996041381A1 A stack/trench diode for use with a multi-state material in a non-volatile memory cell
12/19/1996WO1996041380A1 Memory array having a multi-state element and method for forming such array or cells thereof
12/19/1996WO1996041379A1 Wafer-scale integrated-circuit systems and method of manufacture
12/19/1996WO1996041375A1 Integrated circuit comprising a substrate and a wiring layer with a buffer layer between the substrate and the wiring layer
12/19/1996WO1996041372A1 Method and apparatus for fabricating self-assembling microstructures
12/19/1996WO1996041367A2 Method for shallow junction formation
12/19/1996WO1996041347A1 Negative voltage switching circuit
12/19/1996WO1996041207A1 Performance driven bist technique
12/19/1996WO1996041204A1 Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus
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