Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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03/05/1997 | EP0354226B1 Process for forming isolation regions in a semiconductor substrate |
03/05/1997 | CN1144406A Planar dielectric line and integrated circuit using the same |
03/05/1997 | CN1034198C Semiconductor device having double-layered silicide structure |
03/04/1997 | US5608557 Circuitry with gate line crossing semiconductor line at two or more channels |
03/04/1997 | US5608456 Image sensor used with substantially monochromatic illuminating light of high coherence for preventing or reducing interference fringes |
03/04/1997 | US5608340 Four-terminal semiconductor device |
03/04/1997 | US5608314 Incremental output current generation circuit |
03/04/1997 | US5608258 MOS precision capacitor with low voltage coefficient |
03/04/1997 | US5608257 Fuse element for effective laser blow in an integrated circuit device |
03/04/1997 | US5608253 Advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits |
03/04/1997 | US5608252 Semiconductor with implanted dielectric layer having patched pin-holes |
03/04/1997 | US5608251 Thin film semiconductor integrated circuit and method of fabricating the same |
03/04/1997 | US5608250 Volatile memory cell with interface charge traps |
03/04/1997 | US5608248 Semiconductor memory device with planarization structure |
03/04/1997 | US5608247 Storage capacitor structures using CVD tin on hemispherical grain silicon |
03/04/1997 | US5608246 Integration of high value capacitor with ferroelectric memory |
03/04/1997 | US5608243 Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range |
03/04/1997 | US5608242 Variable width CCD register with uniform pitch and charge storage capacity |
03/04/1997 | US5608241 Semiconductor device having a memory cell portion and a logic portion |
03/04/1997 | US5608240 Semiconductor integrated circuit having at least one asymmetrical CMOS transistor |
03/04/1997 | US5608237 Bidirectional semiconductor switch |
03/04/1997 | US5608235 In a semiconductor substrate |
03/04/1997 | US5608204 Image cell for an image-recorder chip, for protection of high input signal dynamics onto reduced output signal dynamics |
03/04/1997 | US5607884 Method for fabricating MOS transistor having source/drain region of shallow junction and silicide film |
03/04/1997 | US5607875 Method of separating a semiconductor wafer with dielectrics |
03/04/1997 | US5607874 Semiconductors |
03/04/1997 | US5607872 Method of fabricating charge coupled device |
03/04/1997 | US5607869 Method for manufacturing asymmetrical LDD type MIS device |
03/04/1997 | US5607868 Method of fabricating semiconductor device with channel ion implantation through a conductive layer |
03/04/1997 | US5607867 Forming an electrostatic discharge protection device |
03/04/1997 | US5607866 Method of fabricating a semiconductor device having silicide layers for electrodes |
03/04/1997 | US5607600 Fabricating a hybrid thermal detector structure |
03/04/1997 | US5607599 Boron trichloride and chlorine |
03/04/1997 | CA2082772C Image scanner |
03/04/1997 | CA2030008C Light-receiving device |
02/28/1997 | EP0741422A4 Magnetically controlled logic cell |
02/27/1997 | WO1997007631A1 Image system, solid-state imaging device semiconductor integrated circuit, and differential output method used in the system |
02/27/1997 | WO1997007630A1 Mos image pickup device |
02/27/1997 | WO1997007629A1 Mos solid-state image pickup device |
02/27/1997 | WO1997007628A1 Mos solid-state image pickup device |
02/27/1997 | WO1997007550A1 Electrically erasable memory elements characterized by reduced current and improved thermal stability |
02/27/1997 | WO1997007546A1 Metal insulator semiconductor structure with polarization-compatible buffer layer |
02/27/1997 | WO1997007545A1 Method of manufacturing semiconductor integrated circuit |
02/27/1997 | WO1997007544A1 Cmos circuit esd protection using well resistor |
02/27/1997 | WO1997007543A1 Single deposition layer metal dynamic random access memory |
02/27/1997 | WO1997007535A1 Hex metal on rectangular cells; metal or metal two is hex |
02/27/1997 | WO1997007534A1 A process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility |
02/27/1997 | WO1997007459A1 Memory tester providing fast repair of memory chips |
02/27/1997 | WO1997006947A1 Packing material, base material for adhesive tape, or separator |
02/27/1997 | WO1997002592A3 Power semiconductor devices |
02/27/1997 | WO1997001813A3 Electronic devices comprising an array |
02/27/1997 | WO1996041412A3 Monolithic class d amplifier |
02/27/1997 | DE19633689A1 Semiconductor device e.g. DRAM prodn. |
02/27/1997 | DE19632110A1 Power semiconductor device with isolating trench |
02/27/1997 | DE19632087A1 Semiconductor memory device e.g. ROM |
02/27/1997 | CA2228608A1 Metal insulator semiconductor structure with polarization-compatible buffer layer |
02/26/1997 | EP0759661A2 High speed customizable logic array device |
02/26/1997 | EP0759639A2 Source/drain structure of high voltage MOSFET and method of fabricating the same |
02/26/1997 | EP0759622A2 Nonvolatile memory and method of programming the same |
02/26/1997 | EP0759618A2 Semiconductor memory device including divisional decoder circuit composed of nmos transistors |
02/26/1997 | EP0759573A2 Wavelength-selective phase-type optical low-antialiasing filter and fabrication methods |
02/26/1997 | CN1143833A Semiconductor device |
02/26/1997 | CN1143815A Flash EEPROM cell and manufacturing methods thereof |
02/26/1997 | CN1143814A Nonvolatile memory and emthod of programming the same |
02/26/1997 | CN1034143C 二维辐射探测器 Two-dimensional radiation detectors |
02/25/1997 | US5606527 Methods for detecting short-circuited signal lines in nonvolatile semiconductor memory and circuitry therefor |
02/25/1997 | US5606524 Non-volatile semiconductor memory device capable of effecting high-speed operation with low voltage |
02/25/1997 | US5606521 Electrically erasable and programmable read only memory with non-uniform dielectric thickness |
02/25/1997 | US5606358 Light-emitting diode printhead |
02/25/1997 | US5606278 Circuit for limiting the output voltage of a power transistor |
02/25/1997 | US5606197 High capacitance capacitor in an integrated function block or an integrated circuit |
02/25/1997 | US5606193 DRAM and MROM cells with similar structure |
02/25/1997 | US5606192 Semiconductor integrated circuits having bipolar transistors and LDD-structured MOSFET |
02/25/1997 | US5606191 Semiconductor device with lightly doped drain regions |
02/25/1997 | US5606189 Dynamic RAM trench capacitor device with contact strap |
02/25/1997 | US5606188 Fabrication process and structure for a contacted-body silicon-on-insulator dynamic random access memory |
02/25/1997 | US5606187 Charge coupled device gate structure having narrow effective gaps between gate electrodes |
02/25/1997 | US5606186 Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit |
02/25/1997 | US5606184 Semiconductor |
02/25/1997 | US5605861 Thin polysilicon doping by diffusion from a doped silicon dioxide film |
02/25/1997 | US5605857 Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
02/25/1997 | US5605856 Method for designing an electronic integrated circuit with optical inputs and outputs |
02/25/1997 | US5605853 Method of making a semiconductor device having 4 transistor SRAM and floating gate memory cells |
02/25/1997 | US5605851 Method of forming semiconductor device with a buried junction |
02/25/1997 | US5605847 Process for fabricating a TFT by selectively oxidizing or nitriding a light shielding layer |
02/25/1997 | US5605846 Method for manufacturing semiconductor device |
02/25/1997 | US5605783 Forming lenslet forming layer, forming etch stop layer, anisotropically plasma pattern etching lenslet forming layer |
02/25/1997 | US5605723 Method for forming a pattern of non-volatile ferroelectric thin film memory |
02/25/1997 | US5605600 Etch profile shaping through wafer temperature control |
02/20/1997 | WO1997006563A1 Ccd charge splitter |
02/20/1997 | WO1997006559A2 Process for producing a non-volatile memory cell |
02/20/1997 | WO1997006554A2 Semiconductor device provided with transparent switching element |
02/20/1997 | WO1997001847A3 Electrically erasable and programmable read only memory with non-uniform dielectric thickness |
02/20/1997 | WO1997001238A3 Method of operating a ccd imager, and ccd imager suitable for the implementation of such a method |
02/20/1997 | DE19624916A1 LCD active matrix substrate manufacturing method |
02/20/1997 | DE19546423C1 Radiation sensitive transducer e.g. CCD or photodiode array |
02/20/1997 | CA2201383A1 Ccd charge splitter |
02/19/1997 | EP0758799A2 InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor |
02/19/1997 | EP0758798A2 Semiconductor device with enhanced electrical characteristic |
02/19/1997 | EP0672299A4 Transistor fabrication methods and methods of forming multiple layers of photoresist. |