Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
11/1999
11/02/1999US5977596 Depletion controlled isolation stage
11/02/1999US5977595 Apparatus and method for electrostatic discharge protection with improved current dispersion
11/02/1999US5977594 Protecting circuit for a semiconductor circuit
11/02/1999US5977593 Semiconductor device and method of manufacturing the same
11/02/1999US5977592 Semiconductor device having an improved structure and capable of greatly reducing its occupied area
11/02/1999US5977589 DRAM cell arrangement and method for the production thereof
11/02/1999US5977586 Non-volatile integrated low-doped drain device with partially overlapping gate regions
11/02/1999US5977584 Memory devices containing dual-string NOR memory arrays therein
11/02/1999US5977583 Semiconductor memory device including memory cells having a capacitor on bit line structure
11/02/1999US5977582 Capacitor comprising improved TaOx -based dielectric
11/02/1999US5977580 Memory device and fabrication method thereof
11/02/1999US5977578 Method of forming dynamic random access memory circuitry and dynamic random access memory
11/02/1999US5977577 Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation
11/02/1999US5977576 Image sensor
11/02/1999US5977574 High density gate array cell architecture with sharing of well taps between cells
11/02/1999US5977573 Wiring pattern for a semiconductor integrated circuit device
11/02/1999US5977571 Low loss connecting arrangement for photodiodes
11/02/1999US5977565 Semiconductor light emitting diode having a capacitor
11/02/1999US5977563 Active matrix substrate and correcting method of structural defect
11/02/1999US5977535 Light sensing device having an array of photosensitive elements coincident with an array of lens formed on an optically transmissive material
11/02/1999US5976978 Process for repairing data transmission lines of imagers
11/02/1999US5976977 Process for DRAM capacitor formation
11/02/1999US5976960 Method of forming an electrically conductive substrate interconnect continuity region with an angled implant
11/02/1999US5976953 Three dimensional processor using transferred thin film circuits
11/02/1999US5976946 Thin film formation method for ferroelectric materials
11/02/1999US5976945 Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor
11/02/1999US5976944 Integrated circuit with thin film resistors and a method for co-patterning thin film resistors with different compositions
11/02/1999US5976943 Method for bi-layer programmable resistor
11/02/1999US5976942 Method of manufacturing a high-voltage semiconductor device
11/02/1999US5976941 Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates
11/02/1999US5976940 Method of making plurality of bipolar transistors
11/02/1999US5976939 Low damage doping technique for self-aligned source and drain regions
11/02/1999US5976934 Method of manufacturing a nonvolatile semiconductor memory device with select gate bird's beaks
11/02/1999US5976933 Process for manufacturing an integrated circuit comprising an array of memory cells
11/02/1999US5976932 Memory cell and method for producing the memory cell
11/02/1999US5976929 Method of manufacturing a semiconductor integrated circuit device having a capacitor
11/02/1999US5976928 Chemical mechanical polishing of FeRAM capacitors
11/02/1999US5976926 Static memory cell and method of manufacturing a static memory cell
11/02/1999US5976923 Method for fabricating a high-voltage semiconductor device
11/02/1999US5976922 Method for fabricating a high bias device compatible with a low bias device
11/02/1999US5976921 Method for manufacturing electrostatic discharge protection (ESD) and BiCMOS
11/02/1999US5976908 Method of fabricating solid-state image sensor
11/02/1999US5976906 Method for manufacturing a solid state image sensing device
11/02/1999US5976901 Process for manufacturing semiconductor devices with active structures
11/02/1999US5976899 Reduced terminal testing system
11/02/1999US5976713 Exchange-coupling film and, magneto-resistance effect element and magnetic head using thereof
11/02/1999US5976624 Process for producing bismuth compounds, and bismuth compounds
10/1999
10/28/1999WO1999054938A1 Cmos image sensor employing a silicide exclusion mask
10/28/1999WO1999054937A1 Method of designing power supply circuit and semiconductor chip
10/28/1999WO1999054936A1 Polymer devices
10/28/1999WO1999054931A1 Elimination of poly cap for easy poly1 contact for nand floating gate memory
10/28/1999WO1999054918A2 Manufacture of trench-gate semiconductor devices
10/28/1999WO1999054912A1 Active pixel cmos sensor with multiple storage capacitors
10/28/1999WO1999054882A1 Semiconductor memory
10/28/1999WO1999054786A1 Elastomeric mask and use in fabrication of devices, inlcuding pixelated electroluminescent displays
10/28/1999WO1999054128A1 Memory element with memory material comprising phase-change material and dielectric material
10/28/1999WO1999040630A3 Semiconductor device with a bipolar transistor, and method of manufacturing such a device
10/28/1999WO1999033112A9 Integrated circuit and use of a circuit of this type
10/28/1999DE19915075A1 Ferro-electric random access memory (FRAM) with capacitor board lines
10/28/1999DE19860052A1 Semiconductor component with memory node capacitor structure
10/28/1999DE19816449A1 Verfahren zum Herstellen eines SOI-Wafers für niederohmige Hochvolt-Halbleiterbauelemente A method for manufacturing an SOI wafer for low-high-voltage semiconductor devices
10/28/1999CA2324927A1 Memory element with memory material comprising phase-change material and dielectric material
10/27/1999EP0952662A2 Booster circuit
10/27/1999EP0952618A1 Thin film piezoelectric element, method for manufacturing the same, and circuit element
10/27/1999EP0952615A1 Memory cell integrated structure and corresponding biasing device
10/27/1999EP0952614A1 Field effect device with polycrystaline silicon channel
10/27/1999EP0952611A2 Semiconductor device
10/27/1999EP0952588A2 Boosting circuit with boosted voltage limited
10/27/1999EP0952586A2 Semiconductor memory device
10/27/1999EP0951739A1 High density electrical connectors
10/27/1999EP0951738A1 Arrangement for controlling parallel lines in a storage cell arrangement
10/27/1999EP0951737A1 Thermally isolated integrated circuit
10/27/1999EP0951731A2 Programmable integrated passive devices and methods therefor
10/27/1999EP0951688A1 Transponder tags
10/27/1999EP0951637A1 Generator for generating voltage proportional to absolute temperature
10/27/1999EP0951631A1 Spherical shaped semiconductor integrated circuit
10/27/1999EP0853820A4 Nonvolatile reprogrammable interconnect cell with fn tunneling and programming method thereof
10/27/1999EP0853815A4 Formation of source/drain from doped glass
10/27/1999EP0806014A4 Analog processing element (ape) and related devices
10/27/1999CN1233323A Method and device for determining the phase-and/or amplitude data of an electromagnetic wave
10/27/1999CN1233077A Semiconductor memory device and method of manufacturing the same
10/27/1999CN1233076A Interconnection in integrated circuit devices
10/27/1999CN1233075A Method of fabricating ferroelectric integrated circuit using dry and wet etching
10/27/1999CN1233074A Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same
10/27/1999CN1233058A Booster circuit
10/27/1999CN1233057A Semiconductor memory device
10/26/1999US5973976 Logic semiconductor integrated circuit device having embedded dynamic random-access memory
10/26/1999US5973962 Method of programming non-volatile memory devices having a NAND type cell array
10/26/1999US5973954 Reduced leakage DRAM storage unit
10/26/1999US5973953 Semiconductor memory device having improved bit line structure
10/26/1999US5973952 Embedded DRAM with noise protecting shielding conductor
10/26/1999US5973911 Ferroelectric thin-film capacitor
10/26/1999US5973908 Interconnect metallization as the lower capacitor plate, less brittle soft portion between hard portions of amorphous hydrogenated carbon as the capacitor dielectric material, and electrical conductors as upper capacitor plate; good adhesion
10/26/1999US5973901 Semiconductor circuit device with high electrostatic breakdown endurance
10/26/1999US5973633 Weighted capacitor array with selective grouping to form array elements
10/26/1999US5973590 Ultra thin surface mount wafer sensor structures and methods for fabricating same
10/26/1999US5973554 Semiconductor device structured to be less susceptible to power supply noise
10/26/1999US5973546 Charge pump circuit architecture
10/26/1999US5973544 Intermediate potential generation circuit
10/26/1999US5973535 Semiconductor circuit using feedback to latch multilevel data