Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
09/2001
09/26/2001EP1135804A1 Active matrix electroluminescent display device
09/26/2001EP1135801A1 Dram cell having an annular signal transfer region
09/26/2001EP1135798A2 Method of making shallow junction semiconductor devices
09/26/2001EP1135797A1 Textured bi-based oxide ceramic films
09/26/2001EP1135764A1 Active matrix electroluminescent display device
09/26/2001EP0916138B1 Method of operating a storage cell arrangement
09/26/2001EP0847059B1 Semiconductor memory
09/26/2001EP0806057B1 Mos transistor
09/26/2001EP0763256B1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH BiCMOS CIRCUIT
09/26/2001EP0708983B1 Chemical vapor deposition process for fabricating layered superlattice materials
09/26/2001CN2450783Y Assembly structure of internal storage chip
09/26/2001CN1315044A Electronic device and manufacture thereof
09/26/2001CN1314715A Semiconductor device and its producing method
09/26/2001CN1314711A Photosensitive element chip of multiple quantum trap infrared focal plane photovoltaic detector
09/26/2001CN1314707A Method for forming integrated circuit device and integrated circuit device by formed said method
09/26/2001CN1314705A Buried metal double mosaic board capacitor
09/26/2001CN1314608A Electrooptics device
09/26/2001CN1314600A Photographic device
09/26/2001CN1071919C Resistor and method for trimming resistor
09/25/2001US6295236 Semiconductor memory of the random access type with a bus system organized in two planes
09/25/2001US6295235 Redundancy circuit of semiconductor memory
09/25/2001US6295227 Non-volatile semiconductor memory device
09/25/2001US6295226 Memory device having enhanced programming and/or erase characteristics
09/25/2001US6295195 Capacitor having first and second protective films
09/25/2001US6294909 Electro-magnetic lithographic alignment method
09/25/2001US6294841 Integrated semiconductor circuit having dummy structures
09/25/2001US6294834 Structure of combined passive elements and logic circuit on a silicon on insulator wafer
09/25/2001US6294829 Multilayer quadruple gate field effect transistor structure for use in integrated circuit devices
09/25/2001US6294827 Hybrid microwave-frequency integrated circuit
09/25/2001US6294821 Single-chip wavelength converter
09/25/2001US6294816 Secure integrated circuit
09/25/2001US6294815 Semiconductor device
09/25/2001US6294812 High density flash memory cell
09/25/2001US6294811 Two transistor EEPROM cell
09/25/2001US6294810 EEPROM cell with tunneling at separate edge and channel regions
09/25/2001US6294809 Avalanche programmed floating gate memory cell structure with program element in polysilicon
09/25/2001US6294807 Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers
09/25/2001US6294806 Semiconductor memory device having silicon-on-insulator (SOI) structure and method for fabricating thereof
09/25/2001US6294805 Ferroelectric memory devices including capacitors located outside the active area and made with diffusion barrier layers
09/25/2001US6294803 Semiconductor device having trench with vertically formed field oxide
09/25/2001US6294798 Integrated circuit structure comprising capacitor element and corresponding manufacturing process
09/25/2001US6294796 Thin film transistors and active matrices including same
09/25/2001US6294794 Non-linear optical device using quantum dots
09/25/2001US6294722 Integrated thin-film solar battery
09/25/2001US6294478 Fabrication process for a semiconductor substrate
09/25/2001US6294452 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same
09/25/2001US6294441 Method of manufacturing a semiconductor device
09/25/2001US6294438 Semiconductor device having capacitor and manufacturing method thereof
09/25/2001US6294428 Method of forming a flash memory device
09/25/2001US6294427 Non-volatile semiconductor memory device and fabrication method thereof
09/25/2001US6294426 Method of fabricating a capacitor under bit line structure with increased capacitance without increasing the aspect ratio for a dry etched bit line contact hole
09/25/2001US6294425 Methods of forming integrated circuit capacitors by electroplating electrodes from seed layers
09/25/2001US6294424 Method for fabricating a semiconductor device
09/25/2001US6294422 Semiconductor device with high integration density and improved performance
09/25/2001US6294420 Integrated circuit capacitor
09/25/2001US6294419 Structure and method for improved latch-up using dual depth STI with impurity implant
09/25/2001US6294418 Circuits and methods using vertical complementary transistors
09/25/2001US6294413 Method for fabricating a SOI (silicon on insulator) device
09/25/2001US6294412 Silicon based lateral tunneling memory cell
09/25/2001US6294399 Quantum thin line producing method and semiconductor device
09/25/2001US6294398 Method for patterning devices
09/25/2001US6294393 Reduction of imprint in ferroelectric devices using a depoling technique
09/25/2001US6294294 Implantation mask for producing a memory cell configuration
09/25/2001US6294133 Multiple detecting apparatus for physical phenomenon and/or chemical phenomenon
09/25/2001US6294019 Method of making group III-V compound semiconductor wafer
09/25/2001CA2230419C Planar dielectric integrated circuit
09/20/2001WO2001069687A1 Electronic component comprising variable capacitance diodes, use of said component in a receiving unit and a circuit arrangement comprising said component
09/20/2001WO2001069685A2 Trench-gate semiconductor devices
09/20/2001WO2001069684A2 Field-effect semiconductor devices
09/20/2001WO2001069679A1 Vertical electrical interconnections in a stack
09/20/2001WO2001069673A1 Flash memory device and method for manufacturing the same, and method for forming dielectric film
09/20/2001WO2001069665A1 Method for forming dielectric film
09/20/2001WO2001069658A2 One-time programmable anti-fuse element and method
09/20/2001WO2001069607A2 Memory cell, method of formation, and operation
09/20/2001WO2001069604A2 Automated reference cell trimming verify
09/20/2001WO2001069577A2 Fiber display module and panel assembly
09/20/2001WO2001069459A2 Standard block architecture for integrated circuit design
09/20/2001WO2001069316A1 Exposure controlling photomask and production method therefor
09/20/2001WO2001011930A9 A cleaving process to fabricate multilayered substrates using low implantation doses
09/20/2001WO2000049650A9 Iridium etching methods for anisotrophic profile
09/20/2001US20010023129 Semiconductor device and method for providing a contact hole formed in an insulating film
09/20/2001US20010023123 Method for forming semiconductor device having low parasite capacitance using air gap and self-aligned contact plug
09/20/2001US20010023122 Semiconductor device and method for manufacturing the same
09/20/2001US20010023116 Method for setting the threshold voltage of a MOS transistor
09/20/2001US20010023114 Method of manufacturing a semiconductor device comprising semiconductor elements formed in a toplayer of a silicon wafer situated on a buried insulating layer
09/20/2001US20010023111 Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applications
09/20/2001US20010023110 Storage capacitor having undulated lower electrode for a semiconductor device
09/20/2001US20010023109 Fabrication method for MIM capacitive circuit having little leakage current
09/20/2001US20010023105 Insulated gate semiconductor device and method of manufacturing the same
09/20/2001US20010023103 Method for manufacturing a semiconductor memory device incorporating a capacitor therein
09/20/2001US20010023102 Semiconductor memory device using hemispherical grain silicon and method for the manufacture thereof
09/20/2001US20010023099 Semiconductor integrated circuit device, and method of manufacturing the same
09/20/2001US20010023098 Semiconductor devices and methods for manufacturing the same
09/20/2001US20010023096 Semiconductor integrated circuit device having capacitor element
09/20/2001US20010023095 Method and structure for reducing leakage currents of active area diodes and source/drain diffusions
09/20/2001US20010023092 Method of manufacturing a semiconductor device
09/20/2001US20010023089 Semiconductor device and method of fabricating the same
09/20/2001US20010023086 Method for reducing dark current in image sensor
09/20/2001US20010023080 Integrated circuit ferroelectric capacitors including tensile stress applying layer on the upper electrode thereof and methods of fabricatiing same
09/20/2001US20010022751 Redundancy circuit of semiconductor memory