Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
08/2003
08/26/2003US6609446 Separating apparatus, separating method, and method of manufacturing semiconductor substrate
08/21/2003WO2003069960A1 Organic semiconductor device and method for manufacturing the same
08/21/2003WO2003069957A1 Organic el display and its production method
08/21/2003WO2003069780A1 Multi power supply circuit protection apparatus and method
08/21/2003WO2003069753A1 A protection device
08/21/2003WO2003069691A1 Magnetic reluctance element and method for preparation thereof and nonvolatile memory comprising the element
08/21/2003WO2003069686A1 Light emitting device and illuminating device using it
08/21/2003WO2003069681A1 High performance active and passive structures based on silicon material grown epitaxially or bonded to silicon carbide substrate
08/21/2003WO2003069679A1 Integrated, matchable capacitor
08/21/2003WO2003069676A1 Semiconductor device and its manufacturing method
08/21/2003WO2003069675A1 Semiconductor device and its manufacturing method
08/21/2003WO2003069674A1 Magnetic memory device and its production method
08/21/2003WO2003069673A1 Malfunction suprressing circuit for semiconductor device
08/21/2003WO2003069669A1 Semiconductor fabrication process, lateral pnp transistor, and integrated circuit
08/21/2003WO2003069658A2 Strained si based layer made by uhv-cvd, and devices therein
08/21/2003WO2003069652A2 A multilayer structure to form an active matrix display having single crystalline drivers over a transmissive substrate
08/21/2003WO2003069631A2 One-time programmable memory cell
08/21/2003WO2003069626A1 Extraction of a binary code from physical parameters of an integrated circuit
08/21/2003WO2003069288A1 Optical sensor
08/21/2003WO2003049172B1 Lanthanide series layered superlattice materials for integrated circuit applications
08/21/2003WO2003031679A3 Method for depositing metal layers employing sequential deposition techniques
08/21/2003WO2003012794A3 Random access decoder
08/21/2003WO2003001600A3 Memory cell, memory cell configuration and method for producing the same
08/21/2003WO2003000337A3 Piezocomposite ultrasound array and integrated circuit assembly
08/21/2003WO2002101750A3 Digital magnetic storage cell device
08/21/2003WO2002095827A3 Method for producing a semiconductor storage device
08/21/2003WO2002091496A3 Reversible field-programmable electric interconnects
08/21/2003WO2002058154A3 Semiconductor component comprising esd protection
08/21/2003WO2001075687A9 Method and apparatus to optimize an integrated circuit design using transistor folding
08/21/2003US20030159096 Boundary scan with ground bounce recovery
08/21/2003US20030159079 Synchronous semiconductor device
08/21/2003US20030158690 Systems and methods for facilitating automated test equipment functionality within integrated circuits
08/21/2003US20030157811 Semiconductor device
08/21/2003US20030157805 Thick traces from multiple damascene layers
08/21/2003US20030157801 Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof
08/21/2003US20030157798 Method for fabricating a component, and component having a metal layer and an insulation layer
08/21/2003US20030157793 Methods of forming semiconductor structures
08/21/2003US20030157785 Method of forming a thin film transistor on a transparent plate
08/21/2003US20030157783 Use of sacrificial layers in the manufacture of high performance systems on tailored substrates
08/21/2003US20030157778 BiCMOS process with low temperature coefficient resistor (TCRL)
08/21/2003US20030157775 Method for manufacturing semiconductor device with hetero junction bipolar transistor
08/21/2003US20030157774 Method for manufacturing semiconductor device
08/21/2003US20030157770 Method of making the selection gate in a split-gate flash eeprom cell and its structure
08/21/2003US20030157767 Method of manufacturing semiconductor device
08/21/2003US20030157766 Method of making ferroelectric material utilizing anneal in an electrical field
08/21/2003US20030157763 Semiconductor memory and its production process
08/21/2003US20030157758 Non-volatile semiconductor memory device and manufacturing method therefor
08/21/2003US20030157757 Method of manufacturing a semiconductor integrated circuit device
08/21/2003US20030157754 Semiconductor device and fabrication method thereof
08/21/2003US20030157743 Process for forming a storage electrode
08/21/2003US20030157741 Display apparatus and its manufacturing method
08/21/2003US20030157740 Method for forming a non-photosensitive pixel-defining layer on an OLED panel
08/21/2003US20030157737 Method of producing an organic light-emissive device
08/21/2003US20030157244 Coating dielectric layers on glass, silicon or plastic substrates, then applying electroconductive polymers to form embedded multilayers used as light emitters, connectors in electronics, optical or color filters
08/21/2003US20030156482 Single level metal memory cell using chalcogenide cladding
08/21/2003US20030156463 Programmable conductor random access memory and method for sensing same
08/21/2003US20030156460 Self-aligned split-gate flash memory cell and its contactless memory array
08/21/2003US20030156457 Memory device trapping charges in insulating film to store information in non-volatile manner
08/21/2003US20030156452 Multiple data state memory cell
08/21/2003US20030156450 Semiconductor memory device using magnetoresistive effect
08/21/2003US20030156449 Thin film magnetic memory device having communication function, and distribution management system and manufacturing step management system each using thereof
08/21/2003US20030156448 Magnetic thin-film memory device for quick and stable reading data
08/21/2003US20030156447 Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same
08/21/2003US20030156445 Method for resistance switch using short electric pulses
08/21/2003US20030156444 Shared global word line magnetic random access memory
08/21/2003US20030156442 Semiconductor memory device and multi-chip module comprising the semiconductor memory device
08/21/2003US20030156380 Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
08/21/2003US20030156239 Display apparatus and method for manufacturing the same
08/21/2003US20030156210 Solid state image pickup device
08/21/2003US20030156084 Display apparatus in which characteristics of a plurality of transistors are made to differ from one another
08/21/2003US20030156079 Display system and electronic device
08/21/2003US20030155976 Cmos transceiver having an integrated power amplifier
08/21/2003US20030155962 Semiconductor device
08/21/2003US20030155902 Buffered configurable nonvolatile programmable digital potentiometer
08/21/2003US20030155866 Self-luminous display
08/21/2003US20030155860 Active matrix type organic electroluminescent display and method of manufacturing the same
08/21/2003US20030155639 Multilayer; transparent substrate, light receiver chips, hermetic sealing with polymer, die bonding chips
08/21/2003US20030155631 Vertical bipolar transistor
08/21/2003US20030155630 Integrated inductive circuits
08/21/2003US20030155628 Low forward voltage drop schottky barrier diode and manufacturing method therefor
08/21/2003US20030155627 Adjustment-circuit embedded semiconductor sensor and torsion bar type torque sensor system
08/21/2003US20030155626 Photolithography process using multiple anti-reflective coatings
08/21/2003US20030155625 Semiconductor light receiving device and semiconductor part
08/21/2003US20030155621 Semiconductor device and method for fabricating the same
08/21/2003US20030155619 Multilayer; intakes, drains, channels; complementary logic gates; gallium arsenide substarte overcoated with silicon, dielectric
08/21/2003US20030155618 Method of simultaneously making a pair of transistors with insulated grids having respectively a fine oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors
08/21/2003US20030155617 Integrated inductive circuits
08/21/2003US20030155616 Electro-optical device and semiconductor circuit
08/21/2003US20030155615 Structure of a semiconductor integrated circuit and method of manufacturing the same
08/21/2003US20030155614 Charge pump device; multilayer silicone stack
08/21/2003US20030155613 Semiconductor device and method of manufacturing the same
08/21/2003US20030155612 Display device
08/21/2003US20030155609 Self-aligned punch through stop for 6F2 rotated hybrid dram cell
08/21/2003US20030155608 Method for manufacturing flash memory device
08/21/2003US20030155607 Semiconductor integrated circuit
08/21/2003US20030155606 Method to alter chalcogenide glass for improved switching characteristics
08/21/2003US20030155604 Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
08/21/2003US20030155603 Finger metal-insulator-metal capacitor with local interconnect
08/21/2003US20030155602 Memory device
08/21/2003US20030155601 Multilayer; electroconductive layer filling contact hole, electrode, dielectric, electrode
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