Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
11/2005
11/24/2005US20050258863 Quaternary and trinary logic switching circuits
11/24/2005US20050258745 Organic light emitting diode display device and method of manufacturing the same
11/24/2005US20050258744 Organic electroluminescence display device
11/24/2005US20050258741 Organic electro-luminescence display device and fabricating method thereof
11/24/2005US20050258740 Organic EL display and fabricating method thereof
11/24/2005US20050258543 Semiconductor memory device including multi-layer gate structure
11/24/2005US20050258518 Image sensor package module with a leadless leadframe between chips
11/24/2005US20050258513 Thin-film resistor and method of manufacturing the same
11/24/2005US20050258512 Topographically elevated microelectronic capacitor structure
11/24/2005US20050258510 Method for fabricating dielectric mixed layers and capacitive element and use thereof
11/24/2005US20050258508 Semiconductor device with inductors
11/24/2005US20050258507 Q-factor with electrically controllable resistivity of silicon substrate layer
11/24/2005US20050258502 Chip package, image sensor module including chip package, and manufacturing method thereof
11/24/2005US20050258501 Light receiving element, method for producing the same, and light receiving element with built-in circuit
11/24/2005US20050258498 Semiconductor device and method for fabricating the same
11/24/2005US20050258497 Semiconductor device
11/24/2005US20050258496 Integrated circuit including a high voltage bipolar device and low voltage devices
11/24/2005US20050258495 Gate driver output stage with bias circuit for high and wide operating voltage range
11/24/2005US20050258493 Reverse conducting semiconductor device and a fabrication method thereof
11/24/2005US20050258492 Low-voltage single-layer polysilicon eeprom memory cell
11/24/2005US20050258491 Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxides
11/24/2005US20050258490 Field-shielded SOI-MOS structure free from floating body effects, and method of fabrication therefor
11/24/2005US20050258487 TFT, method of manufacturing the TFT, flat panel display having the TFT, and method of manufacturing the flat panel display
11/24/2005US20050258486 Thin film transistor substrate and fabrication method thereof
11/24/2005US20050258485 Silicon on insulator device and method of manufacturing the same
11/24/2005US20050258482 Anti-fuse device
11/24/2005US20050258479 Trench MOSFET
11/24/2005US20050258478 Semiconductor device
11/24/2005US20050258474 Semiconductor device
11/24/2005US20050258473 Semiconductor device of non- volatile memory
11/24/2005US20050258472 Nonvolatile semiconductor memory device for increasing coupling ratio, and of fabrication method thereof
11/24/2005US20050258471 Semiconductor devices having improved gate insulating layers and related methods of fabricating such devices
11/24/2005US20050258466 Capacitor and light emitting display using the same
11/24/2005US20050258465 Semiconductor memory device including multi-layer gate structure
11/24/2005US20050258464 Field effect power transistor
11/24/2005US20050258463 Non-volatile semiconductor memory device and process of manufacturing the same
11/24/2005US20050258462 CMOS image sensor
11/24/2005US20050258457 CMOS imager pixel designs
11/24/2005US20050258454 Silicon carbide semiconductor device and method for manufacturing the same
11/24/2005US20050258452 Semiconductor device and manufacturing method therefor
11/24/2005US20050258443 Light emitting device
11/24/2005US20050258441 Electroluminescent device and electronic apparatus
11/24/2005US20050258437 Electroluminescent display devices
11/24/2005US20050258436 Lighting device
11/24/2005US20050258433 Carbene metal complexes as OLED materials
11/24/2005US20050258432 Method for increasing optical output of semiconductor led using pulsation current and a driving unit of the semiconductor led using the method
11/24/2005US20050258429 Color oled device having improved peformance
11/24/2005US20050258428 Thin-film transistor array with ring geometry
11/24/2005US20050258426 Organic light emitting display device
11/24/2005US20050258425 Photoelectric conversion device, image scanning apparatus, and manufacturing method of the photoelectric conversion device
11/24/2005US20050258424 Integrated capacitor
11/24/2005US20050258423 Semiconductor device and electronic device
11/24/2005US20050258420 Semiconductor device having a gap between a gate electrode and a dummy gate electrode
11/24/2005US20050258415 Heterojunction far infrared photodetector
11/24/2005US20050258369 Radiation detector
11/24/2005US20050258351 Light filtering image sensor
11/24/2005US20050258350 Optoelectronic semiconductor device and method of manufacturing such a device
11/24/2005US20050258349 Photoelectric converter device and manufacturing method thereof
11/24/2005US20050258347 Optical positioning device having shaped illumination
11/24/2005US20050258340 Photodetector circuits
11/24/2005US20050258339 Simple CMOS light-to-current sensor
11/24/2005US20050258338 Optical arrangement for a homing head
11/24/2005US20050258337 Optical sensor, method of reading optical sensor, matrix-type optical sensor circuit, and electronic apparatus
11/24/2005US20050258336 Image sensor with protective package structure for sensing area
11/24/2005US20050257947 Integrated circuit having building blocks
11/24/2005US20050257741 Film forming apparatus and method of manufacturing light emitting device
11/24/2005DE69034191T2 EEPROM-System mit aus mehreren Chips bestehender Blocklöschung EEPROM system with an existing block of several chips deletion
11/24/2005DE102005020153A1 2D-Bilderzeugungsverfahren und System mit Festkörper-Bilderfassungsvorrichtung 2D image generation method and system with solid-state image sensing device
11/24/2005DE102005019975A1 Monolithischer Röntgenstrahldetektor mit gestaffelten Detektionsbereichen Monolithic X-ray detector with staggered detection zones
11/24/2005DE102005018347A1 Flash-Speicherzelle, Flash-Speichervorrichtung und Herstellungsverfahren hierfür Flash memory cell flash memory device and manufacturing method thereof
11/24/2005DE102005014144A1 Leuchtdiode Light-emitting diode
11/24/2005DE102005003675A1 CBRAM memory cell comprises a metallic material incorporated in or deposited on a matrix-host material, and a memory cell having a memory switching mechanism based on the variation of the metallic material
11/24/2005DE102004063454A1 Verfahren zur Herstellung einer Gateelektrode einer Halbleitervorrichtung A method of manufacturing a gate electrode of a semiconductor device
11/24/2005DE102004063452A1 Fabrication of flash memory device includes depositing first oxide layer, polysilicon layers, and dielectric layer, forming second oxide layer, performing heat treatment, and removing parts of dielectric layer and second polysilicon layer
11/24/2005DE102004021401A1 Stapelkondensatorfeld und Herstellungsverfahren für ein Stapelkondensatorfeld Stack capacitor array and manufacturing method of a stacked capacitor field
11/24/2005DE102004021391A1 Integrated circuit has cmos and or logic circuit and a power circuit with pile up effect dopant enrichment by the trench structure
11/24/2005DE102004021113A1 SOI-Scheibe und Verfahren zu ihrer Herstellung SOI wafer and processes for their preparation
11/24/2005DE102004020593A1 Fin-Feldeffekttransistor-Anordnung und Verfahren zum Herstellen einer Fin-Feldeffektransistor-Anordnung Fin field effect transistor arrangement and method for producing a fin field effect transistor arrangement
11/24/2005DE102004019090A1 Trench capacitor used in a semiconductor memory cell comprises a trench formed in a semiconductor substrate, an insulating collar in the upper region of the trench, upper and lower capacitor electrodes and a dielectric layer
11/24/2005DE102004010673A1 Semiconductor device, has two tunnel FETs of opposite conductivity types arranged in substrate
11/24/2005DE10035439B4 Verbesserter DRAM-Durchgangstransistor mit Arsen-Implantierung Improved DRAM pass transistor with arsenic implantation
11/23/2005EP1599073A1 Organic EL display and fabricating method thereof
11/23/2005EP1599039A1 Solid-state imaging device driving method
11/23/2005EP1599034A2 Image pickup device, and driving controlling method for solid-state imaging device
11/23/2005EP1599032A2 Solid-state image pickup device and camera
11/23/2005EP1598880A2 Method of manufacturing of an OLED display
11/23/2005EP1598877A1 Switching element
11/23/2005EP1598873A1 CMOS image sensor and method of fabrication thereof
11/23/2005EP1598869A2 Organic electroluminescence display device and fabricating method thereof
11/23/2005EP1598867A2 Test circuit under pad
11/23/2005EP1598865A1 Mram with a novel buffer layer
11/23/2005EP1598863A1 Semiconductor device and radiation detector employing it
11/23/2005EP1598862A1 Semiconductor device and radiation detector employing it
11/23/2005EP1598860A2 TFT, method of manufacturing the TFT, flat panel display having the TFT, and method of manufacturing the flat panel display
11/23/2005EP1598840A1 Composition for thin-film capacitor device, high dielectric constant insulator film, thin-film capacitor device, thin-film multilayer capacitor, electronic circuit and electronic device
11/23/2005EP1598805A2 SRAM core cell for light-emitting display
11/23/2005EP1598796A1 Display and folding mobile terminal
11/23/2005EP1597774A1 Optoelectronic component comprising a light-emitting diode and a light sensor
11/23/2005EP1597768A1 Cmos image sensor and method of fabrication
11/23/2005EP1597767A2 Integrated semiconductor circuit comprising a transistor with laterally staggered source and drain electrodes