Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2001
11/28/2001EP1158531A2 Semiconductor memory device
11/28/2001EP1158530A2 Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
11/28/2001EP1158526A2 Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
11/28/2001EP1158524A1 Semiconductor memory device having a boosted voltage generating circuit
11/28/2001EP1158408A1 EEPROM memory comprising an error correction system
11/28/2001EP0806045B1 Decoded wordline driver with positive and negative voltage modes
11/28/2001EP0801795B1 Advanced program verify for page mode flash memory
11/28/2001EP0729633B1 Sense amplifier for non-volatile semiconductor memory
11/28/2001CN1324487A Semiconductor memory device
11/28/2001CN1324486A Semiconductor device
11/27/2001US6324626 Semiconductor memory
11/27/2001US6324114 Semiconductor memory device using a plurality of semiconductor memory chips mounted in one system and a semiconductor memory system using a plurality of semiconductor memory devices
11/27/2001US6324112 Reading device and method for integrated circuit memory
11/27/2001US6324109 Semiconductor storage device capable of increasing access time speed
11/27/2001US6324106 Semiconductor memory device capable of recovering defective bit and a system having the same semiconductor memory device
11/27/2001US6324103 Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device
11/27/2001US6324102 Radiation tolerant flash FPGA
11/27/2001US6324101 Storage method involving change of resistance state
11/27/2001US6324100 Nonvolatile semiconductor memory device
11/27/2001US6324099 2-bit/cell type nonvolatile semiconductor memory
11/27/2001US6324098 Reading circuit for nonvolatile memory cells without limitation of the supply voltage
11/27/2001US6324096 Interface circuit and method for writing data into a non-volatile memory, and scan register
11/27/2001US6324095 Low voltage flash EEPROM memory cell with improved data retention
11/27/2001US6324094 Apparatus for reading state of multistate non-volatile memory cells
11/27/2001US6323799 Device for reading non-volatile memory cells in particular analog flash memory cells
11/27/2001US6323724 Biasing circuit for quickly outputting stable bias output and semiconductor memory device using the same
11/27/2001US6323691 Logic circuit
11/27/2001US6323671 Charge gain stress test circuit for nonvolatile memory and test method using the same
11/27/2001US6323517 Non-volatile memory device with single-layered overwriting transistor
11/27/2001US6323515 Non-volatile memory and semiconductor device
11/27/2001US6323089 Semiconductor memory array with buried drain lines and processing methods therefor
11/27/2001US6323088 Dual floating gate programmable read only memory cell structure and method for its fabrication an operation
11/27/2001CA2186141C An iterative method of recording analog signals
11/22/2001WO2001088926A1 Method pf processing a write command
11/22/2001US20010044918 Semiconductor integrated circuit and design method and manufacturing method of the same
11/22/2001US20010043492 Method for erasing memory cells in a nonvolatile memory
11/22/2001US20010043491 Apparatus and method for programming voltage protection in a non-volatile memory system
11/22/2001US20010043490 Flash memory cell for high efficiency programming
11/22/2001US20010043489 Nonvolatile memory sensing circuit and techniques thereof
11/22/2001US20010043087 Sense amplifying circuit
11/22/2001DE10121459A1 Semiconductor device, such as fusible link semiconductor memory device, has fusible link circuit with its fusible link in series with an assessment transistor having a controlled impedance path
11/22/2001DE10121298A1 Flash memory testing process using data erasing and new data writing en block, or block per block
11/22/2001DE10103804A1 Securing data files in non-volatile memory involves writing data partitioned into blocks rotated and addressed with new addresses, regenerating with filters and reverse rotation
11/22/2001DE10100939A1 Non-volatile semiconductor arrangement used as an EEPROM comprises storage cells for the electrical programming by transferring charges between a charge receiving layer and a semiconductor substrate and arranged in the form a matrix
11/21/2001CN1075211C Memory management method for portable terminal
11/20/2001US6320818 Semiconductor storage device, and method for generating timing of signal for activating internal circuit thereof
11/20/2001US6320800 Semiconductor memory and nonvolatile semiconductor memory having redundant circuitry for replacing defective memory cell
11/20/2001US6320793 Non-volatile memory device
11/20/2001US6320792 Row decoding circuit for a semiconductor non-volatile electrically programmable memory and corresponding method
11/20/2001US6320791 Writing apparatus for a non-volatile semiconductor memory device
11/20/2001US6320790 Biasing stage for biasing the drain terminal of a nonvolatile memory cell during the read phase
11/20/2001US6320789 Method of chisel programming in non-volatile memory by source bias
11/20/2001US6320788 Programmable impedance device
11/20/2001US6320787 Nonvolatile memory with illegitimate read preventing capability
11/20/2001US6320786 Method of controlling multi-state NROM
11/20/2001US6320784 Memory cell and method for programming thereof
11/20/2001US6320455 Boost circuit
11/20/2001US6320428 Semiconductor integrated circuit device
11/20/2001US6320217 Semiconductor memory device
11/20/2001US6319773 Construction and application for non-volatile, reprogrammable switches
11/15/2001US20010042161 Semiconductor redundant memory provided in common
11/15/2001US20010042159 Multiplexing of trim outputs on a trim bus to reduce die size
11/15/2001US20010042157 Timesharing internal bus, particularly for non-volatile memories
11/15/2001US20010040831 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
11/15/2001US20010040826 Method and apparatus for programming multi-state cells in a memory device
11/15/2001US20010040825 Analog voltage supply circuit for a non-volatile memory
11/15/2001US20010040823 Apparatus and method for programming voltage protection in a non-volatile memory system
11/15/2001US20010040822 Nonvolatile semiconductor memory
11/15/2001US20010040821 Nonvolatile semiconductor memory device
11/15/2001US20010040820 Memory using insulator traps
11/14/2001EP1154439A1 Programming flash memory analog storage using coarse-and-fine sequence
11/14/2001EP1154437A2 Low voltage flash EEPROM mmory cell with improved data retention
11/14/2001EP1153393A1 Improved word line boost circuit
11/14/2001EP0961290B1 Flash memory with improved erasability and its circuitry
11/14/2001EP0903752B1 Nonvolatile semiconductor memory
11/13/2001US6317849 Method and apparatus for controlling available capabilities of a device
11/13/2001US6317383 Detection circuit for detecting timing of two node signals
11/13/2001US6317371 Storage device with an error correction unit and an improved arrangement for accessing and transferring blocks of data stored in a non-volatile semiconductor memory
11/13/2001US6317368 Semiconductor integrated circuit device tested in batches
11/13/2001US6317364 Multi-state memory
11/13/2001US6317363 Multi-state memory
11/13/2001US6317362 Semiconductor memory device
11/13/2001US6317361 Semiconductor memory capable of detecting defective data in the memory cells thereof
11/13/2001US6317360 Flash memory and methods of writing and erasing the same as well as a method of forming the same
11/13/2001US6316968 Sense amplifier circuit
11/08/2001WO2001084632A1 One-time uv-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory
11/08/2001WO2001084556A1 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase
11/08/2001WO2001084554A1 Reduction of data dependent power supply noise when sensing the state of a memory cell
11/08/2001WO2001084553A2 Three-dimensional memory array and method of fabrication
11/08/2001WO2001084552A2 Programming of nonvolatile memory cells
11/08/2001WO2001084321A1 Method, system and computer program for data management on storage medium
11/08/2001WO2001084318A1 Methods and apparatus for authenticating data stored in memory
11/08/2001US20010039634 Method of reducing test time for NVM cell-based FPGAs
11/08/2001US20010038563 Reduction of data dependent power supply noise when sensing the state of a memory cell
11/08/2001US20010038558 String programmable nonvolatile memory with NOR architecture
11/08/2001US20010038555 Nonvolatile memory and semiconductor device
11/08/2001US20010038554 Semiconductor memory device and restoration method therefor
11/08/2001US20010038549 Cell array, operating method of the same and manufacturing method of the same
11/08/2001US20010038135 Memory using insulator traps
11/08/2001US20010038118 Nonvolatile semiconductor memory and method of manufacturing the same
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