C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
01/1987
01/06/1987	US4634630 Tellurium oxide whiskers and a method of producing the same
01/06/1987	US4634599 Method for making ordered monolayers of macromolecules
12/1986
12/30/1986	US4632843 Spherical single crystals; coating; tablets, capsules, seeding; aspirin, cirtric acid
12/30/1986	US4632794 Filtering a dispersion of silicon carbide, drying; uniformity
12/30/1986	EP0206603A1 Method for growing crystals
12/30/1986	EP0206541A2 Gallium arsenide single crystals, and process for the preparation thereof
12/30/1986	EP0205422A1 Continuously pulled single crystal silicon ingots
12/24/1986	CN85103942A Laser-heating recrystallization method to polycrystalline silicon on the insulated layer
12/23/1986	US4631234 Doping, semiconductors
12/23/1986	CA1215521A1 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
12/17/1986	EP0205284A2 Optical waveguides
12/17/1986	EP0205034A1 Chemical vapor deposition method for the GaAs thin film
12/16/1986	US4629618 Boehmite
12/04/1986	WO1986007194A1 Wafer base for silicon carbide semiconductor device
11/1986
11/26/1986	CN85104093A Process for decolorizing zinc tungstate monocrystals by heat treatment
11/25/1986	US4624858 Process for the production by catalysis of a layer having a high magnetic anisotropy in a ferrimagnetic garnet
11/25/1986	CA1214381A1 Method of growing gallium arsenide crystals using boron oxide encapsulant
11/20/1986	WO1986006764A1 Continuously pulled single crystal silicon ingots
11/18/1986	US4623426 Low temperature process for depositing epitaxial layers
11/18/1986	US4623425 Method of fabricating single-crystal substrates of silicon carbide
11/18/1986	US4623423 Annealing in zero temperature gradient
11/18/1986	CA1214251A1 Cr-doped gadolinium gallium garnet laser
11/11/1986	US4622264 Garnet film for magnetic bubble memory element
11/11/1986	US4622236 Boron nitride film and process for preparing same
11/04/1986	US4621065 Chrysoberyl cat's-eye synthetic single crystal
11/04/1986	US4620897 Method for growing multicomponent compound semiconductor crystals
10/1986
10/29/1986	EP0199440A1 A method of manufacturing a single crystal of BaPb1-xBix03
10/29/1986	EP0199414A2 Plane optical waveguide and process for its production
10/29/1986	EP0199093A1 Process and apparatus for pulling a ribbon composed of a substrate coated by a semi-conductor material film from a melt of this material
10/29/1986	EP0198852A1 Method for improving crystallinity of semiconductor ribbon
10/29/1986	EP0115539B1 Single crystalline dl-cysteine and process for their preparation
10/29/1986	CN85103282A Method and device for growing bar shaped ruby
10/28/1986	US4619811 Apparatus for growing GaAs single crystal by using floating zone
10/23/1986	WO1986006109A1 Method and apparatus for growing single crystal bodies
10/21/1986	US4618396 GaAs single crystal and preparation thereof
10/21/1986	CA1212888A1 Mold having a helix for casting single crystal articles
10/14/1986	US4617084 Process for the production of metallic or semimetallic shaped elements
10/14/1986	US4616595 Device for depositing a layer of silicon on a carbon tape
10/14/1986	CA1212600A1 Hydrothermal crystal growing process
10/14/1986	CA1212599A1 Process for manufacturing boron-doped gallium arsenide single crystal
10/14/1986	CA1212597A1 Casting a metal single crystal article using a seed crystal and a helix
10/09/1986	WO1986005824A1 Thin layer consisting essentially of ruthenium salt
10/08/1986	EP0196854A2 Method of synthesizing group III element-phosphorus compound
09/1986
09/30/1986	CA1212019A1 Apparatus for performing solution growth of group ii- vi compound semiconductor crystal
09/30/1986	CA1212018A1 Method of performing solution growth of group iii-v compound semiconductor crystal layer under control of conductivity type thereof
09/24/1986	EP0195678A2 Diamond as a thermoluminescent material
09/23/1986	US4613495 Growth of single crystal Cadmium-Indium-Telluride
09/23/1986	CA1211688A1 Solid state production of multiple single crystal articles
09/20/1986	WO1990010726A1 Use of metallo-organic compounds for vapour deposition of thin films
09/17/1986	EP0194499A2 Process for diffusing impurities into a semiconductor body
09/03/1986	CN86100854A Method for making heavy sb-admixed silicon monocrystal by use of pure nitrogen as protective atmosphere
09/03/1986	CN85107621A Trihydroxy methylaminomethane (tam) crystal, it's growth and application in x-rays-spectroscopy
09/02/1986	US4609530 GaAs single crystal with small fluctuation in impurity concentration in the plane perpendicular to the growth direction of the crystal
09/02/1986	US4609425 Cold crucible system and method for the meeting and crystallization of non-metallic inorganic compounds
09/02/1986	US4609411 Liquid-phase epitaxial growth method of a IIIb-Vb group compound
08/1986
08/26/1986	CA1210526A1 Device having semi-insulating indium phosphides based compositions
08/20/1986	EP0191671A1 A method for the poling treatment of a lithium tantalate single crystal
08/20/1986	EP0191111A1 Improvements to pulling processes and equipment for growing silicon crystals having high and controlled carbon content
08/19/1986	US4606846 Mixed rare earth metal, divalent transition metal, aluminum oxide
08/13/1986	EP0190854A2 Method for producing a perpendicular magnetic recording medium
08/12/1986	US4605542 Heating carbon black in an inert atmosphere with silica recovered from geothermal water
08/12/1986	US4605452 Single crystal articles having controlled secondary crystallographic orientation
08/06/1986	CN85100836A Method of growing ktp monocrystal from the molten salt
08/06/1986	CN85100534A High temp. crystal growing unit using temp. gradient method
07/1986
07/29/1986	US4602980 Method for improving crystallinity of semiconductor ribbon
07/29/1986	CA1208812A1 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers
07/29/1986	CA1208806A1 Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device
07/29/1986	CA1208525A1 Process for the manufacture of coarsely crystalline to monocrystalline sheets of semiconductor material
07/23/1986	EP0187843A1 Growth of single crystal cadmium-indium-telluride.
07/22/1986	CA1207998A1 Process for making laser host garnet crystal material free of water and hydroxyl ion impurities
07/16/1986	EP0187400A1 Multilayer optical component
07/08/1986	US4599245 Method for making large-surface silicon crystal bodies
07/08/1986	US4599133 Conductors having high density integration
07/02/1986	EP0186532A1 Method of producing by catalysis a layer having a strong magnetic anisotropy in a ferrimagnetic garnet
07/02/1986	EP0186531A1 Method of producing a layer having a strong magnetic anisotropy in a ferrimagnetic garnet
07/02/1986	EP0186528A1 Magnetic garnet material, magnetic film with a strong Faraday rotation comprising such a material and manufacturing method therefor
07/02/1986	CN85100856A New technique for prepn of monocrystal si chip with perfact layer on the surface
07/02/1986	CN85100591A Technic and equipment of single crystal si pulling in non-linear magnetic field
07/01/1986	US4597809 Superalloy
06/1986
06/25/1986	EP0185499A2 Thermoelectric alloy composition
06/24/1986	CA1206398A1 Superalloy single crystal articles
06/19/1986	WO1986003523A1 Continuously pulled single crystal silicon ingots
06/11/1986	EP0184317A2 Graphite fibre growth employing nuclei derived from iron pentacarbonyl
06/11/1986	EP0184311A2 Oxide whisker growth on contaminated aluminium-containing stainless steel foil
06/10/1986	US4594628 Magnetic head having cobalt-containing zinc-ferrous ferrite core
06/05/1986	WO1986003231A1 Chemical beam deposition method
06/03/1986	US4592793 Heating to diffuse Group 5 element dope
06/03/1986	US4592792 Using a mixture of silicon and chloride source gas; controlling temperature
06/03/1986	US4592791 Indium phosphide substrate; growing an aluminum, indium arsenic intermetallic by liquid phase epitaxy
05/1986
05/28/1986	EP0181900A1 Process for producing carbon fibres vapour-deposited from methane.
05/27/1986	US4591994 Method and apparatus for controlling shape of single crystal
05/27/1986	US4591492 Treatment with sulfuric, hydrochloric, or nitric acid prior to calcination
05/27/1986	US4591409 Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth
05/27/1986	US4591408 Liquid phase growth of crystalline polyphosphide
05/22/1986	WO1986002951A1 Method of growing crystalline layers by vapour phase epitaxy
05/21/1986	EP0057696B1 Heat treated single crystal articles and process
05/20/1986	US4590043 Apparatus for obtaining silicon from fluosilicic acid
05/20/1986	US4589737 Doped and undoped single crystal multilayered structures
05/13/1986	US4588449 Magnesium sublimation
05/07/1986	EP0179907A1 Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution.

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