Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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06/14/1988 | CA1237964A1 Heat treatment of single crystals |
06/08/1988 | CN87108014A Process for growing shaped single crystals |
06/08/1988 | CN87108007A Apparatus for growing profieled single crystals |
06/07/1988 | US4749869 Process for irradiating topaz and the product resulting therefrom |
06/07/1988 | CA1237641A1 Method of controlled, uniform doping of floating zone silicon |
06/02/1988 | WO1988003968A1 Device for growing profiled monocrystals |
06/02/1988 | WO1988003967A1 Method of growing profiled monocrystals |
06/02/1988 | WO1988003918A2 Fabrication of rods of uniform high density from powders of refractory materials |
06/01/1988 | EP0269532A1 Process for obtaining intermetallic compound crystals, especially isolated single crystals, by cooling molten alloys |
05/31/1988 | US4747906 Process and apparatus for purifying silicon |
05/31/1988 | US4747774 Conforming crucible/susceptor system for silicon crystal growth |
05/25/1988 | EP0268166A2 Molten metal and fused salt resistant materials, their production and application |
05/25/1988 | EP0267941A1 Process for preparing single crystal binary metal oxides of improved purity. |
05/25/1988 | EP0138963B1 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers |
05/24/1988 | US4746538 Process for depositing a thin layer of a material on the wall of a hollow body |
05/24/1988 | US4746396 Nonlinear optical properties |
05/11/1988 | DE3736731A1 Epitaxiale festigkeitserhoehung von kristallen Epitaxial festigkeitserhoehung of crystals |
05/04/1988 | EP0265518A1 Congruently melting complex oxides. |
04/27/1988 | EP0265319A1 Process, cell and apparatus for crystal growth, in particular for a space craft |
04/26/1988 | US4740606 Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films |
04/26/1988 | US4740263 Vapor deposition, electron bombardment |
04/26/1988 | CA1235825A1 Method of making magnetic bubble devices containing bismuth-containing garnet films |
04/21/1988 | WO1988002794A1 Method, cell and device for crystallogenesis, particularly for spacecraft |
04/21/1988 | WO1988002792A1 Process for depositing layers of diamond |
04/13/1988 | EP0263543A1 Process for producing a single crystal of a III-V semiconducting compound using the Czochralski method by liquid encapsulation |
04/13/1988 | EP0263141A1 Method for depositing materials containing tellurium. |
04/06/1988 | EP0262961A1 Fuel cell with electrolyte matrix assembly |
04/05/1988 | CA1234740A1 Promoting directional grain growth in objects |
03/29/1988 | CA1234531A1 Cold crucible for melting non-metallic inorganic compounds |
03/23/1988 | EP0260534A1 Metallorganic compounds |
03/23/1988 | CN87105216A Process of treating diamond particles |
03/22/1988 | US4732749 Roasting with magnesium oxide |
03/22/1988 | EP0131586A4 Process and apparatus for obtaining silicon from fluosilicic acid. |
03/16/1988 | EP0259777A2 Method for growing single crystal thin films of element semiconductor |
03/16/1988 | EP0259759A2 Method for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
03/15/1988 | US4731153 Method to manufacture BaPb1-x BIx O3 single crystal |
03/15/1988 | CA1234035A1 Fabrication of single crystal fibers from congruently melting materials |
03/02/1988 | EP0181900B1 Process for producing carbon fibres vapour-deposited from methane |
03/02/1988 | CN86100393B Process & device of growing ktp crystal by the flux mothod |
03/01/1988 | US4728371 Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation |
02/25/1988 | WO1988001204A1 Laser assisted fiber growth |
02/24/1988 | CN87105811A Gas phase nitrogen-doping method for straight-pulling monocrystalline silicon |
02/09/1988 | US4724038 Basic oxide or carbonate of component a and excess of acidic component b, heating, exposing to mixture of carbon monoxide and carbon dioxide |
02/09/1988 | CA1232568A1 Process for fabricating an optical device |
02/03/1988 | EP0254940A2 Method for processing diamond particles |
02/03/1988 | EP0254818A2 Support material for catalysts |
02/03/1988 | EP0111510B1 Low temperature process for depositing epitaxial layers |
02/02/1988 | US4722764 Crucible-free zone pulling of polycrystalline rod crucible-free zone pulling of polycrystalline rod |
02/02/1988 | US4722763 Forming coating on metal particles; adding combustible material; melting metal; slow cooling |
01/28/1988 | WO1988000625A1 Method of epitaxially growing compound semiconductor materials |
01/21/1988 | EP0114876A4 Ultra-pure epitaxial silicon and process for its manufacture. |
01/20/1988 | EP0253512A2 Preparation of lead titanate for use in piezoelectric composite transducers |
01/20/1988 | EP0253134A2 Method and apparatus for making ignorganic webs and structures formed thereof |
01/13/1988 | EP0252537A1 Process for crystal growth of KTiOPO4 from solution |
01/13/1988 | EP0252536A1 Fabrication method of optical strip transmission line for non-reciprocal optical components |
01/13/1988 | EP0252279A2 Process and apparatus for seperating silicon wafers, to be used for solar cells, from according to the horizontal ribbon pulling growth method prepared silicon ribbon |
01/13/1988 | CN87103690A Separation of silicon belt produced by horizontal draw process |
01/12/1988 | US4719148 Magnetic head having a core of Mn-Zn-Co ferrous ferrite |
01/07/1988 | EP0251555A1 Gallium Hydride/trialkylamine adducts, and their use in deposition of III-V compound films |
01/07/1988 | DE3719548A1 Diffusion of acceptor element into III=V cpd. semiconductor wafer |
01/06/1988 | CN87102986A Growing the imitation cat's eye ruby |
01/06/1988 | CN86101506A Method for growing of colour crystal |
01/05/1988 | US4717443 Mass transport of indium phosphide |
12/29/1987 | US4716029 Boehmite |
12/17/1987 | WO1987007655A1 Process for preparing single crystal binary metal oxides of improved purity |
12/17/1987 | WO1987007559A1 Novel carbon fibrils, method for producing same, and compositions containing same |
12/16/1987 | EP0249038A2 Process for irradiating topaz and the product resulting therefrom |
12/15/1987 | US4712855 Iron garnet |
12/09/1987 | EP0248212A2 Magnetic device and method of manufacture |
12/08/1987 | US4711971 Thermoelectric Si-Ge alloy composition |
12/08/1987 | US4711696 Process for enhancing Ti:Al2 O3 tunable laser crystal fluorescence by controlling crystal growth atmosphere |
12/08/1987 | US4711695 Apparatus for and method of making crystalline bodies |
12/08/1987 | US4711694 Process for producing a layer having a high magnetic anisotropy in a ferrimagnetic garnet |
12/02/1987 | EP0247681A1 Magnetic material, magnetic recording medium, and method of manufacturing a magnetic material |
12/02/1987 | EP0247158A1 Method for fabricating articles having heteroepitaxial structures. |
11/25/1987 | EP0246514A2 Deep trench etching of single crystal silicon |
11/24/1987 | US4708763 Method of manufacturing bismuth germanate crystals |
11/17/1987 | US4707384 Method for making a composite body coated with one or more layers of inorganic materials including CVD diamond |
11/17/1987 | US4707192 Nickel-base single crystal superalloy and process for production thereof |
11/11/1987 | EP0244987A1 A process for growing a multi-component crystal |
11/10/1987 | US4705591 Pulling processes and equipment for growing silicon crystals having high and controlled carbon content |
11/05/1987 | WO1987006630A1 Congruently melting complex oxides |
11/04/1987 | EP0243805A2 Process for the production of shaped articles from granules based on silicon, germanium or mixed crystals of these elements |
11/03/1987 | CA1228787A1 Process for preparing znse single crystal |
10/28/1987 | EP0243231A1 Process for preparing III-V group single crystal semi-isolators by doping, and use of the semi-isolators so obtained |
10/28/1987 | EP0243215A2 A single crystal wafer of lithium tantalate |
10/28/1987 | EP0243074A2 Process for forming deposited film |
10/27/1987 | US4702901 Process for growing silicon carbide whiskers by undercooling |
10/27/1987 | US4702791 Vapor phase reaction of bismuth, or alkylated bismuth with metal compound |
10/27/1987 | CA1228525A1 Method for growing gaas single crystal by a floating zone technique |
10/27/1987 | CA1228524A1 Method for growing a gaas single crystal by pulling from gaas melt |
10/22/1987 | WO1987006275A1 Method for depositing materials containing tellurium |
10/22/1987 | DE3712443A1 Verfahren zur entfernung von film von dendritischen strang-silizium A process for removing film of dendritic strand silicon |
10/21/1987 | EP0242207A2 Process for forming deposited film |
10/21/1987 | EP0241614A1 Process for enhancing Ti:Al2O3 tunable laser crystal fluorescence by controlling crystal growth atmosphere |
10/14/1987 | EP0241321A1 Process for making berlinite crystals with a high overstrain coefficient |
10/14/1987 | EP0241198A1 Composite material with light matrix metal and with reinforcing fiber material being short fiber material mixed with potassium titanate whiskers |
10/14/1987 | EP0241187A1 A method of manufacturing a single crystal of BaPb1-xBix03 |
10/14/1987 | EP0138965B1 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers |
10/14/1987 | CN87102590A Single crystal articles having reduced anisotropy |